World's Best Scientists 2026 revealed!

D-Index & Metrics

Physics

D-Index
77
Citations
20298
World Ranking
3244
National Ranking
14

Overview

Thomas Ihn is affiliated with the Solid State Physics Laboratory in India and has contributed extensively to the fields of Physics and Astronomy as well as Materials Science. Their research focus spans subfields such as Atomic and Molecular Physics, and Optics; Materials Chemistry; Electrical and Electronic Engineering; Artificial Intelligence; and Biomedical Engineering.

The scientist's work centers on topics including Quantum and electron transport phenomena, Graphene research and applications, Topological Materials and Phenomena, Semiconductor Quantum Structures and Devices, Advancements in Semiconductor Devices and Circuit Design, 2D Materials and Applications, and Molecular Junctions and Nanostructures.

Among recent publications, several papers are notable for their focus on advanced graphene systems and quantum devices. These include:

  • Gate-defined Josephson junctions in magic-angle twisted bilayer graphene (2021, Nature Nanotechnology)
  • Correlated electron-hole state in twisted double-bilayer graphene (2021, Science)
  • Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts (2020, Physical Review Letters)
  • Automated Tuning of Double Quantum Dots into Specific Charge States Using Neural Networks (2020, Physical Review Applied)
  • The electronic thickness of graphene (2020, Science Advances)

Thomas Ihn has collaborated frequently with colleagues such as K. Ensslin, Takashi Taniguchi, Kenji Watanabe, Chuyao Tong, and Rebekka Garreis.

The most frequent venues for Ihn's publications include arXiv (Cornell University), Physical Review Research, Physical Review Letters, Nano Letters, and Nature Communications.

Best Publications

  • Counting statistics of single electron transport in a quantum dot.

    S. Gustavsson;R. Leturcq;B. Simovič;R. Schleser

  • Energy spectra of quantum rings

    A. Fuhrer;S. Lüscher;T. Ihn;T. Heinzel

  • Energy spectra of quantum rings

    A. Fuhrer;S. Luescher;T. Ihn;T. Heinzel

  • Energy Gaps in Etched Graphene Nanoribbons

    C. Stampfer;J. Güttinger;S. Hellmüller;F. Molitor

  • Tunable Graphene Single Electron Transistor

    C. Stampfer;E. Schurtenberger;F. Molitor;J. Güttinger

  • Tunable Graphene Single Electron Transistor

    C. Stampfer;E. Schurtenberger;F. Molitor;J. Guettinger

  • Dipole coupling of a double quantum dot to a microwave resonator.

    T. Frey;P. J. Leek;M. Beck;A. Blais

  • Tunable Coulomb blockade in nanostructured graphene

    C. Stampfer;J. Güttinger;F. Molitor;D. Graf

  • Tunable Coulomb blockade in nanostructured graphene

    C. Stampfer;J. Guettinger;F. Molitor;D. Graf

  • Quantum capacitance and density of states of graphene

    S Dröscher;P Roulleau;F Molitor;P Studerus

  • Coherent spin–photon coupling using a resonant exchange qubit

    Andreas J. Landig;Jonne V. Koski;Pasquale Scarlino;Udson Mendes

  • Strong Coupling Cavity QED with Gate-Defined Double Quantum Dots Enabled by a High Impedance Resonator

    Anna Stockklauser;Pasquale Scarlino;Jonne V. Koski;Simone Gasparinetti

  • Semiconductor Nanostructures: Quantum states and electronic transport

    Thomas Ihn

  • Frequency-selective single-photon detection using a double quantum dot.

    S. Gustavsson;M. Studer;R. Leturcq;T. Ihn

  • Coherent spin-qubit photon coupling

    A. J. Landig;J. V. Koski;P. Scarlino;U. C. Mendes

  • Observation of excited states in a graphene quantum dot

    S. Schnez;F. Molitor;C. Stampfer;J. Guettinger

  • Transport gap in side-gated graphene constrictions

    F. Molitor;A. Jacobsen;C. Stampfer;J. Güttinger

  • Observation of excited states in a graphene quantum dot

    S. Schnez;F. Molitor;C. Stampfer;J. Güttinger

  • Transport through graphene quantum dots

    J Güttinger;F Molitor;C Stampfer;S Schnez

  • Electron transport in a two-dimensional electron gas with magnetic barriers

    T. Vancura;Thomas Ihn;S. Broderick;Klaus Ensslin

Frequent Co-Authors

Klaus Ensslin
Klaus Ensslin ETH Zurich
Werner Wegscheider
Werner Wegscheider Solid State Physics Laboratory
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Christoph Stampfer
Christoph Stampfer RWTH Aachen University
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Arthur C. Gossard
Arthur C. Gossard University of California, Santa Barbara
Andreas D. Wieck
Andreas D. Wieck Ruhr University Bochum
Laurence Eaves
Laurence Eaves University of Nottingham
Vladimir I. Fal'ko
Vladimir I. Fal'ko University of Manchester

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Thomas Ihn

Trending Scientists