World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
55
Citations
11463
World Ranking
8562
National Ranking
346

B.A. Joyce publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where B.A. Joyce sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 279 publications — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

B.A. Joyce D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where B.A. Joyce sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 55 D-Index — 34th percentile

34% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2000 - Fellow of the Royal Society, United Kingdom

Overview

B.A. Joyce is affiliated with Imperial College London in the United Kingdom. This association places the scientist within one of the leading institutions known for research and education in science and engineering.

The scientist has been recognized as a Fellow of the Royal Society, United Kingdom, an award received in the year 2000. This fellowship indicates acknowledgment by a significant scientific community.

There are no recent papers, frequent co-authors, publication venues, book publications, main or subfields of study, or main research topics explicitly listed for B.A. Joyce. Therefore, the profile focuses on the available affiliations and honors without detailing specific research outputs or collaborations.

Best Publications

  • Dynamics of film growth of GaAs by MBE from Rheed observations

    J. H. Neave;B. A. Joyce;P. J. Dobson;N. Norton

  • Reflection high‐energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements

    J. H. Neave;P. J. Dobson;B. A. Joyce;Jing Zhang

  • Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying

    P. B. Joyce;T. J. Krzyzewski;G. R. Bell;B. A. Joyce

  • Oscillations in the surface structure of Sn-doped GaAs during growth by MBE

    J.J. Harris;B A. Joyce;P.J. Dobson

  • Rheed studies of heterojunction and quantum well formation during MBE growth-from multiple scattering to band offsets

    B.A. Joyce;P.J. Dobson;J.H. Neave;K. Woodbridge

  • Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxy

    J.H. Neave;B.A. Joyce

  • Dynamic RHEED observations of the MBE growth of GaAs

    J. H. Neave;B. A. Joyce;P. J. Dobson

  • Analysis of reflection high-energy electron-diffraction data from reconstructed semiconductor surfaces

    B. A. Joyce;J. H. Neave;P. J. Dobson;P. K. Larsen

  • Island Nucleation and Growth on Reconstructed GaAs(001) Surfaces

    M. Itoh;G. R. Bell;A. R. Avery;T. S. Jones

  • Tin‐doping effects in GaAs films grown by molecular beam epitaxy

    Unknown

  • Surface alloying at InAsGaAs interfaces grown on (001) surfaces by molecular beam epitaxy

    J.G. Belk;C.F. McConville;J.L. Sudijono;T.S. Jones

  • A correlation between electron traps and growth processes in n‐GaAs prepared by molecular beam epitaxy

    J. H. Neave;P. Blood;B. A. Joyce

  • Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A

    H. Yamaguchi;J. G. Belk;X. M. Zhang;J. L. Sudijono

  • Kinetic limitations to surface segregation during MBE growth of III–V compounds: Sn in GaAs

    J. J. Harris;D. E. Ashenford;C. T. Foxon;P. J. Dobson

  • Surface electronic structure of GaAs(001)-(2×4): Angle-resolved photoemission and tight-binding calculations

    P. K. Larsen;J. F. van der Veen;A. Mazur;J. Pollmann

  • The As-terminated reconstructions formed by GaAs(001): a scanning tunnelling microscopy study of the (2 × 4) and c(4 × 4) surfaces

    A.R Avery;D.M Homes;J Sudijono;T.S Jones

  • SCANNING TRANSMISSION-ELECTRON MICROSCOPY STUDY OF INAS/GAAS QUANTUM DOTS

    P. D. Siverns;S. Malik;G. McPherson;D. Childs

  • Surface processes controlling the growth of GaxIn1−xAs and GaxIn1−xP alloy films by MBE

    C.T. Foxon;B.A. Joyce

  • Inhibitions of three dimensional island formation in InAs films grown on GaAs (111)A surface by molecular beam epitaxy

    H. Yamaguchi;M. R. Fahy;B. A. Joyce

  • Composition effects in the growth of Ga(In)AsyP1-y alloys by MBE

    C.T. Foxon;B.A. Joyce;M.T. Norris

  • SURFACE CONTRAST IN TWO DIMENSIONALLY NUCLEATED MISFIT DISLOCATIONS IN INAS/GAAS(110) HETEROEPITAXY

    J. G. Belk;J. L. Sudijono;X. M. Zhang;J. H. Neave

  • Dynamic effects in RHEED from MBE grown GaAs(001) surfaces

    P.K. Larsen;P.J. Dobson;J.H. Neave;B.A. Joyce

  • NUCLEATION AND GROWTH OF ISLANDS ON GAAS SURFACES

    A. R. Avery;H. T. Dobbs;D. M. Holmes;B. A. Joyce

Frequent Co-Authors

Maohai Xie
Maohai Xie University of Hong Kong
C.T. Foxon
C.T. Foxon University of Nottingham
Martyn E. Pemble
Martyn E. Pemble Tyndall National Institute
Alan G. Taylor
Alan G. Taylor Cornell University
Karl Woodbridge
Karl Woodbridge University College London
Wei Liu
Wei Liu Sun Yat-sen University
Xiang Zhang
Xiang Zhang University of Hong Kong
Christopher McConville
Christopher McConville Deakin University
Paul A. Midgley
Paul A. Midgley University of Cambridge

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