B.A. Joyce

Research.com Recognitions

• 2000 - Fellow of the Royal Society, United Kingdom

Overview

Best Publications

• Dynamics of film growth of GaAs by MBE from Rheed observations

  J. H. Neave;B. A. Joyce;P. J. Dobson;N. Norton

  1167
  Citations

• Reflection high‐energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements

  J. H. Neave;P. J. Dobson;B. A. Joyce;Jing Zhang

  968
  Citations

• Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying

  P. B. Joyce;T. J. Krzyzewski;G. R. Bell;B. A. Joyce

  421
  Citations

• Oscillations in the surface structure of Sn-doped GaAs during growth by MBE

  J.J. Harris;B A. Joyce;P.J. Dobson

  416
  Citations

• Rheed studies of heterojunction and quantum well formation during MBE growth-from multiple scattering to band offsets

  B.A. Joyce;P.J. Dobson;J.H. Neave;K. Woodbridge

  225
  Citations

• Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxy

  J.H. Neave;B.A. Joyce

  221
  Citations

• Dynamic RHEED observations of the MBE growth of GaAs

  J. H. Neave;B. A. Joyce;P. J. Dobson

  216
  Citations

• Analysis of reflection high-energy electron-diffraction data from reconstructed semiconductor surfaces

  B. A. Joyce;J. H. Neave;P. J. Dobson;P. K. Larsen

  210
  Citations

• Island Nucleation and Growth on Reconstructed GaAs(001) Surfaces

  M. Itoh;G. R. Bell;A. R. Avery;T. S. Jones

  198
  Citations

• Tin‐doping effects in GaAs films grown by molecular beam epitaxy

  Unknown

  169
  Citations

• Surface alloying at InAsGaAs interfaces grown on (001) surfaces by molecular beam epitaxy

  J.G. Belk;C.F. McConville;J.L. Sudijono;T.S. Jones

  167
  Citations

• A correlation between electron traps and growth processes in n‐GaAs prepared by molecular beam epitaxy

  J. H. Neave;P. Blood;B. A. Joyce

  167
  Citations

• Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A

  H. Yamaguchi;J. G. Belk;X. M. Zhang;J. L. Sudijono

  163
  Citations

• Kinetic limitations to surface segregation during MBE growth of III–V compounds: Sn in GaAs

  J. J. Harris;D. E. Ashenford;C. T. Foxon;P. J. Dobson

  159
  Citations

• Surface electronic structure of GaAs(001)-(2×4): Angle-resolved photoemission and tight-binding calculations

  P. K. Larsen;J. F. van der Veen;A. Mazur;J. Pollmann

  157
  Citations

• The As-terminated reconstructions formed by GaAs(001): a scanning tunnelling microscopy study of the (2 × 4) and c(4 × 4) surfaces

  A.R Avery;D.M Homes;J Sudijono;T.S Jones

  157
  Citations

• SCANNING TRANSMISSION-ELECTRON MICROSCOPY STUDY OF INAS/GAAS QUANTUM DOTS

  P. D. Siverns;S. Malik;G. McPherson;D. Childs

  154
  Citations

• Surface processes controlling the growth of GaxIn1−xAs and GaxIn1−xP alloy films by MBE

  C.T. Foxon;B.A. Joyce

  148
  Citations

• Inhibitions of three dimensional island formation in InAs films grown on GaAs (111)A surface by molecular beam epitaxy

  H. Yamaguchi;M. R. Fahy;B. A. Joyce

  144
  Citations

• Composition effects in the growth of Ga(In)AsyP1-y alloys by MBE

  C.T. Foxon;B.A. Joyce;M.T. Norris

  135
  Citations

• SURFACE CONTRAST IN TWO DIMENSIONALLY NUCLEATED MISFIT DISLOCATIONS IN INAS/GAAS(110) HETEROEPITAXY

  J. G. Belk;J. L. Sudijono;X. M. Zhang;J. H. Neave

  127
  Citations

• Dynamic effects in RHEED from MBE grown GaAs(001) surfaces

  P.K. Larsen;P.J. Dobson;J.H. Neave;B.A. Joyce

  124
  Citations

• NUCLEATION AND GROWTH OF ISLANDS ON GAAS SURFACES

  A. R. Avery;H. T. Dobbs;D. M. Holmes;B. A. Joyce

  112
  Citations