World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
41
Citations
5817
World Ranking
4344
National Ranking
76

Overview

Eric Tournié is affiliated with the University of Montpellier in France. Their research spans the fields of engineering as well as physics and astronomy, with a distinct focus on electrical and electronic engineering, atomic and molecular physics and optics, and spectroscopy.

Their scientific work covers multiple subfields, including electrical and electronic engineering, atomic and molecular physics and optics, spectroscopy, materials chemistry, and biomedical engineering.

Major topics explored by Eric Tournié include photonic and optical devices, semiconductor quantum structures and devices, semiconductor lasers and optical devices, spectroscopy and laser applications, solar cell performance optimization, chalcogenide semiconductor thin films, and advanced fiber laser technologies.

Eric Tournié has published frequently in several key venues, notably:

  • Optics Express
  • Light Science & Applications
  • Optica
  • APL Photonics
  • Solar Energy Materials and Solar Cells

Among recent scientific publications associated with Eric Tournié are:

  • Near-Field Thermophotovoltaic Conversion with High Electrical Power Density and Cell Efficiency above 14%, 2021, Nano Letters
  • Mid-infrared III-V semiconductor lasers epitaxially grown on Si substrates, 2022, Light Science & Applications
  • Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon, 2020, Optica
  • Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides, 2023, Light Science & Applications
  • Crystal Phase Control during Epitaxial Hybridization of III-V Semiconductors with Silicon, 2021, Advanced Electronic Materials

Frequent co-authors collaborating with Eric Tournié include:

  • Jean-Baptiste Rodriguez
  • L. Cerutti
  • А. Н. Баранов
  • Audrey Gilbert
  • D. A. Díaz-Thomas

Best Publications

  • On the origin of carrier localization in Ga1−xInxNyAs1−y/GaAs quantum wells

    M.-A. Pinault;E. Tournié

  • Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range

    Gunther Roelkens;Utsav Dave;Alban Gassenq;Nannicha Hattasan

  • Near-Field Thermophotovoltaic Conversion with High Electrical Power Density and Cell Efficiency above 14.

    Christophe Lucchesi;Dilek Cakiroglu;Jean-Philippe Perez;Thierry Taliercio

  • Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm.

    Eva Ryckeboer;Alban Gassenq;Muhammad Muneeb;Nannicha Hattasan

  • Surfactant-mediated molecular beam epitaxy of strained layer semiconductor heterostructures

    Eric Tournié;Kalus H. Ploog

  • Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing

    E. Tournié;M.-A. Pinault;A. Guzmán

  • Nanoindentation of Si, GaP, GaAs and ZnSe single crystals

    S. E. Grillo;M. Ducarroir;M. Nadal;E. Tournie

  • Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si

    Jean-Rémy Reboul;Laurent Cerutti;Jean-Baptiste Rodriguez;Pierre Grech

  • Silicon-based heterogeneous photonic integrated circuits for the mid-infrared

    Gunther Roelkens;Utsav Dave;Alban Gassenq;Nannicha Hattasan

  • Localized surface plasmon resonances in highly doped semiconductors nanostructures

    V. N'Tsame Guilengui;L. Cerutti;J.-B. Rodriguez;E. Tournié

  • Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy

    A. Hierro;J.-M. Ulloa;J.-M. Chauveau;A. Trampert

  • NOVEL PLASTIC STRAIN-RELAXATION MODE IN HIGHLY MISMATCHED III-V LAYERS INDUCED BY TWO-DIMENSIONAL EPITAXIAL GROWTH

    A. Trampert;E. Tournié;K. H. Ploog

  • Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

    Unknown

  • Quantum cascade lasers grown on silicon

    A.N. Baranov;H. Nguyen-Van;Z. Loghmari;L. Cerutti

  • Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells

    J.-M. Chauveau;A. Trampert;K. H. Ploog;E. Tournié

  • Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip

    Alban Gassenq;Nannicha Hattasan;Laurent Cerutti;Jean Batiste Rodriguez

  • Interface analysis of InAs/GaSb superlattice grown by MBE

    B. Satpati;J.B. Rodriguez;A. Trampert;E. Tournié

  • GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 $\mu$ m at Room Temperature

    L. Cerutti;J.B. Rodriguez;E. Tournie

  • Nature of the band gap in Zn 1 − x Be x Se alloys

    C. Chauvet;E. Tournié;J.-P. Faurie

  • Structural and optical properties of Al0.48In0.52As layers grown on InP by molecular beam epitaxy: Influence of the substrate temperature and of a buffer layer

    E. Tournié;Y.‐H. Zhang;N. J. Pulsford;K. Ploog

  • Evaluation of the potential of ZnSe and Zn(Mg)BeSe compounds for ultraviolet photodetection

    F. Vigue;E. Tournie;J.-P. Faurie

  • Brewster "mode" in highly doped semiconductor layers: an all-optical technique to monitor doping concentration.

    Thierry Taliercio;Vilianne Ntsame Guilengui;Laurent Cerutti;Eric Tournié

Frequent Co-Authors

Jean-Baptiste Rodriguez
Jean-Baptiste Rodriguez University of Montpellier
Achim Trampert
Achim Trampert Paul Drude Institute for Solid State Electronics
Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS
K. H. Ploog
K. H. Ploog National Sun Yat-sen University
Gunther Roelkens
Gunther Roelkens Ghent University
Roel Baets
Roel Baets Ghent University
Biswarup Satpati
Biswarup Satpati Saha Institute of Nuclear Physics
Thierry Baron
Thierry Baron Grenoble Alpes University
Richard M. Osgood
Richard M. Osgood Columbia University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For students pursuing Electronics and Electrical Engineering, exploring related online degrees can broaden career prospects and offer flexible learning options. Many professionals prefer pathways that cater to introverted personalities, making good paying jobs for introverts a relevant consideration. Careers in engineering and project management often provide environments where focused, independent work is valued.

Accelerated programs are especially beneficial for working adults looking to advance quickly. Programs like the quickest online project management degree allow students to gain critical skills in less time, enabling a smoother transition into leadership roles.

For those interested in bridging technical and managerial expertise, pursuing a bachelor of project management can complement an engineering background. This combination equips graduates with the tools to oversee complex projects in technology-driven industries effectively.

Additionally, working professionals may find value in accelerated online degrees tailored to fit busy schedules, providing a practical route to degree completion while balancing career responsibilities.

Best Scientists Citing Eric Tournié

Trending Scientists

Recently Published Articles