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Materials Science

D-Index
48
Citations
7316
World Ranking
10920
National Ranking
328

Overview

Thierry Baron is affiliated with Grenoble Alpes University in France and has a body of research primarily focused on engineering and physics, particularly within the domains of electrical and electronic engineering and atomic and molecular physics, and optics.

The scientist's recent research outputs span a variety of topics related to semiconductor and photonic technologies. Publications include studies on semiconductor quantum structures and devices, photonic and optical devices, nanowire synthesis and applications, and semiconductor lasers and optical devices.

Selected recent papers by Thierry Baron include:

  • "Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)", 2020, Nature Communications
  • "Room-temperature continuous-wave topological Dirac-vortex microcavity lasers on silicon", 2023, Light Science & Applications
  • "Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing", 2020, ACS Applied Materials & Interfaces
  • "Gallium Selenide Nanoribbons on Silicon Substrates for Photodetection", 2021, ACS Applied Nano Materials
  • "Digital twin design requirements in downgraded situations management", 2021, IFAC-PapersOnLine

The scientist has frequently published in the following venues:

  • Microelectronic Engineering
  • SSRN Electronic Journal
  • ACS Applied Nano Materials
  • Advanced Optical Materials
  • ACS Photonics

Thierry Baron has collaborated extensively with several researchers, including:

  • M. Martin, with 24 joint publications
  • F. Bassani, with 10 joint publications
  • J. Moeyaert, with 10 joint publications
  • Mingchu Tang, with 9 joint publications
  • Huiyun Liu, with 9 joint publications

The scientist's primary fields of study include:

  • Engineering, with 75 publications
  • Physics and Astronomy, with 38 publications

Within these fields, subfields with notable contributions include:

  • Electrical and Electronic Engineering (60 publications)
  • Atomic and Molecular Physics, and Optics (33 publications)
  • Biomedical Engineering (14 publications)
  • Materials Chemistry (8 publications)
  • Condensed Matter Physics (5 publications)

Thierry Baron's main research topics encompass:

  • Semiconductor Quantum Structures and Devices (34 publications)
  • Photonic and Optical Devices (32 publications)
  • Nanowire Synthesis and Applications (22 publications)
  • Semiconductor materials and devices (20 publications)
  • Semiconductor Lasers and Optical Devices (18 publications)
  • Photonic Crystals and Applications (12 publications)
  • GaN-based semiconductor devices and materials (10 publications)

Best Publications

  • Size effects in mechanical deformation and fracture of cantilevered silicon nanowires.

    Michael J. Gordon;Thierry Baron;Florian Dhalluin;Pascal Gentile

  • Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

    B. De Salvo;G. Ghibaudo;G. Pananakakis;P. Masson

  • Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications

    M. Kanoun;A. Souifi;T. Baron;F. Mazen

  • Laser diodes based on beryllium-chalcogenides

    A. Waag;F. Fischer;K. Schüll;T. Baron

  • Chemical vapor deposition of Ge nanocrystals on SiO2

    T. Baron;B. Pelissier;L. Perniola;F. Mazen

  • Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales

    Cédric Sire;Serge Blonkowski;Michael J. Gordon;Thierry Baron

  • Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices

    T. Baron;F. Martin;P. Mur;C. Wyon

  • Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

    R. Alcotte;M. Martin;J. Moeyaert;R. Cipro

  • Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates.

    Siming Chen;Mengya Liao;Mingchu Tang;Jiang Wu

  • Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)

    Barbara De Salvo;C. Gerardi;R. van Schaijk;S.A. Lombardo

  • Single-electron charging effect in individual Si nanocrystals

    T. Baron;P. Gentile;N. Magnea;P. Mur

  • How far will silicon nanocrystals push the scaling limits of NVMs technologies

    B. De Salvo;C. Gerardi;S. Lombardo;T. Baron

  • Silicon nanocrystal memories

    S. Lombardo;B. De Salvo;C. Gerardi;T. Baron

  • Massless Dirac Fermions in ZrTe2 Semimetal Grown on InAs(111) by van der Waals Epitaxy.

    Polychronis Tsipas;Dimitra Tsoutsou;Sotirios Fragkos;Roberto Sant

  • Novel beryllium containing II–VI compounds: basic properties and potential applications

    A. Waag;A. Waag;Th. Litz;F. Fischer;H.-J. Lugauer

  • Atomic force microscopy nanomanipulation of silicon nanocrystals for nanodevice fabrication

    Sébastien Decossas;Frédéric Mazen;Thierry Baron;Georges Brémond

  • Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001).

    Taojie Zhou;Mingchu Tang;Guohong Xiang;Boyuan Xiang

  • A Group-Delay-Based Chipless RFID Humidity Tag Sensor Using Silicon Nanowires

    R. S. Nair;E. Perret;S. Tedjini;T. Baron

  • Toward a Reliable Chipless RFID Humidity Sensor Tag Based on Silicon Nanowires

    Arnaud Vena;Etienne Perret;Darine Kaddour;Thierry Baron

  • Electronic properties of Ge nanocrystals for non volatile memory applications

    M. Kanoun;C. Busseret;A. Poncet;A. Souifi

  • Nitrogen doping of Te-based II–VI compounds during growth by molecular beam epitaxy

    T. Baron;K. Saminadayar;N. Magnea

Frequent Co-Authors

Jean-Luc Rouvière
Jean-Luc Rouvière Grenoble Alpes University
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
B. De Salvo
B. De Salvo Meta for Business
Huiyun Liu
Huiyun Liu University College London
Andreas Waag
Andreas Waag Technische Universität Braunschweig
Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS
Eric Tournié
Eric Tournié University of Montpellier
Thomas Ernst
Thomas Ernst Grenoble Alpes University
Jens Kreisel
Jens Kreisel University of Luxembourg

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