D-Index & Metrics Best Publications

D-Index & Metrics

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 40 Citations 5,907 257 World Ranking 8695 National Ranking 245

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Silicon
  • Optics

The scientist’s investigation covers issues in Nanotechnology, Silicon, Chemical vapor deposition, Optoelectronics and Nanocrystal. His Nanotechnology study integrates concerns from other disciplines, such as Flexural strength and Group. Thierry Baron has included themes like Wafer, Doping, Silane, Nanoelectronics and Quantum tunnelling in his Silicon study.

Thierry Baron combines subjects such as Nucleation, Capacitance, Quantum dot, Layer and Analytical chemistry with his study of Chemical vapor deposition. His Optoelectronics study combines topics in areas such as Oxide and Deposition. His Nanocrystal research is multidisciplinary, relying on both Scanning tunneling microscope and Germanium.

His most cited work include:

  • Size effects in mechanical deformation and fracture of cantilevered silicon nanowires. (152 citations)
  • Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices (135 citations)
  • Laser diodes based on beryllium-chalcogenides (113 citations)

What are the main themes of his work throughout his whole career to date?

His primary scientific interests are in Optoelectronics, Nanotechnology, Silicon, Nanowire and Chemical vapor deposition. His Optoelectronics study combines topics from a wide range of disciplines, such as Substrate and Epitaxy. His Nanotechnology research focuses on subjects like Copolymer, which are linked to Thin film.

His Silicon research is multidisciplinary, incorporating perspectives in Oxide, Nanoelectronics, Scanning electron microscope, Quantum dot and Nanocrystal. The concepts of his Nanowire study are interwoven with issues in Field-effect transistor, Condensed matter physics, Photonics and Catalysis. Within one scientific family, Thierry Baron focuses on topics pertaining to Doping under Chemical vapor deposition, and may sometimes address concerns connected to Molecular beam epitaxy.

He most often published in these fields:

  • Optoelectronics (51.21%)
  • Nanotechnology (38.61%)
  • Silicon (31.37%)

What were the highlights of his more recent work (between 2016-2021)?

  • Optoelectronics (51.21%)
  • Silicon (31.37%)
  • Nanowire (31.10%)

In recent papers he was focusing on the following fields of study:

His primary areas of investigation include Optoelectronics, Silicon, Nanowire, Substrate and Chemical vapor deposition. His Optoelectronics research integrates issues from Laser and Epitaxy. The various areas that Thierry Baron examines in his Silicon study include Thin film, Nanotechnology, Quantum well, Electrical resistivity and conductivity and Band gap.

His Nanotechnology research includes elements of Polishing, Microstructure and Silicon dioxide. His studies deal with areas such as Alloy, Scattering and Silicon-germanium as well as Nanowire. Thierry Baron interconnects Layer and Chemical engineering in the investigation of issues within Chemical vapor deposition.

Between 2016 and 2021, his most popular works were:

  • Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates. (64 citations)
  • Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon (41 citations)
  • Strongly Directional Scattering from Dielectric Nanowires (37 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Optics
  • Electrical engineering

Thierry Baron mainly investigates Optoelectronics, Chemical vapor deposition, Substrate, Silicon and Quantum dot. His Optoelectronics study focuses mostly on Photonics, Semiconductor and Photonic integrated circuit. His research in Chemical vapor deposition intersects with topics in Layer, Metalorganic vapour phase epitaxy, Molecular beam epitaxy and Chemical engineering.

His Quantum dot research incorporates elements of Laser, Lasing threshold and Quantum dot laser. In his study, which falls under the umbrella issue of Doping, Nanotechnology is strongly linked to Surface roughness. The Vapor–liquid–solid method research Thierry Baron does as part of his general Nanowire study is frequently linked to other disciplines of science, such as Spectroscopy, therefore creating a link between diverse domains of science.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Size effects in mechanical deformation and fracture of cantilevered silicon nanowires.

Michael J. Gordon;Thierry Baron;Florian Dhalluin;Pascal Gentile.
Nano Letters (2009)

203 Citations

Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

B. De Salvo;G. Ghibaudo;G. Pananakakis;P. Masson.
IEEE Transactions on Electron Devices (2001)

177 Citations

Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications

M. Kanoun;A. Souifi;T. Baron;F. Mazen.
Applied Physics Letters (2004)

161 Citations

Chemical vapor deposition of Ge nanocrystals on SiO2

T. Baron;B. Pelissier;L. Perniola;F. Mazen.
Applied Physics Letters (2003)

161 Citations

Laser diodes based on beryllium-chalcogenides

A. Waag;F. Fischer;K. Schüll;T. Baron.
Applied Physics Letters (1997)

151 Citations

Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices

T. Baron;F. Martin;P. Mur;C. Wyon.
Journal of Crystal Growth (2000)

149 Citations

Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales

Cédric Sire;Serge Blonkowski;Michael J. Gordon;Thierry Baron.
Applied Physics Letters (2007)

133 Citations

Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)

Barbara De Salvo;C. Gerardi;R. van Schaijk;S.A. Lombardo.
IEEE Transactions on Device and Materials Reliability (2004)

127 Citations

Single-electron charging effect in individual Si nanocrystals

T. Baron;P. Gentile;N. Magnea;P. Mur.
Applied Physics Letters (2001)

121 Citations

How far will silicon nanocrystals push the scaling limits of NVMs technologies

B. De Salvo;C. Gerardi;S. Lombardo;T. Baron.
international electron devices meeting (2003)

120 Citations

If you think any of the details on this page are incorrect, let us know.

Contact us

Best Scientists Citing Thierry Baron

Andreas Waag

Andreas Waag

Technische Universität Braunschweig

Publications: 39

Huiyun Liu

Huiyun Liu

University College London

Publications: 29

Kei May Lau

Kei May Lau

Hong Kong University of Science and Technology

Publications: 28

John E. Bowers

John E. Bowers

University of California, Santa Barbara

Publications: 27

Tupei Chen

Tupei Chen

Nanyang Technological University

Publications: 25

Tomasz Dietl

Tomasz Dietl

Polish Academy of Sciences

Publications: 24

Gerard Ghibaudo

Gerard Ghibaudo

Grenoble Alpes University

Publications: 24

Justin D. Holmes

Justin D. Holmes

University College Cork

Publications: 23

Michael A. Morris

Michael A. Morris

Trinity College Dublin

Publications: 23

Vladimir G. Dubrovskii

Vladimir G. Dubrovskii

St Petersburg University

Publications: 22

Eric Tournié

Eric Tournié

University of Montpellier

Publications: 20

Alwyn J. Seeds

Alwyn J. Seeds

University College London

Publications: 19

Gérard Bidan

Gérard Bidan

Grenoble Alpes University

Publications: 17

Arthur C. Gossard

Arthur C. Gossard

University of California, Santa Barbara

Publications: 17

John G. Ekerdt

John G. Ekerdt

The University of Texas at Austin

Publications: 16

J. M. Hartmann

J. M. Hartmann

CEA LETI

Publications: 16

Trending Scientists

Terry Caelli

Terry Caelli

Deakin University

Reuven Cohen

Reuven Cohen

Bar-Ilan University

Qiwei Yao

Qiwei Yao

London School of Economics and Political Science

Akhil Garg

Akhil Garg

Huazhong University of Science and Technology

Jürgen Schubert

Jürgen Schubert

Forschungszentrum Jülich

Moshe Yaniv

Moshe Yaniv

Institut Pasteur

Michal Horsák

Michal Horsák

Masaryk University

Stephan Clemens

Stephan Clemens

University of Bayreuth

Zhenlin Li

Zhenlin Li

Université Paris Cité

Gary H. Cohen

Gary H. Cohen

University of Pennsylvania

Mark H. Kaplan

Mark H. Kaplan

Northwell Health

Frank P. Seelos

Frank P. Seelos

Johns Hopkins University Applied Physics Laboratory

Willie G. Harris

Willie G. Harris

University of Florida

Gordon B. Moskowitz

Gordon B. Moskowitz

Lehigh University

Peter J. Dyck

Peter J. Dyck

Mayo Clinic

Joanne Neale

Joanne Neale

King's College London

Something went wrong. Please try again later.