The scientist’s investigation covers issues in Nanotechnology, Silicon, Chemical vapor deposition, Optoelectronics and Nanocrystal. His Nanotechnology study integrates concerns from other disciplines, such as Flexural strength and Group. Thierry Baron has included themes like Wafer, Doping, Silane, Nanoelectronics and Quantum tunnelling in his Silicon study.
Thierry Baron combines subjects such as Nucleation, Capacitance, Quantum dot, Layer and Analytical chemistry with his study of Chemical vapor deposition. His Optoelectronics study combines topics in areas such as Oxide and Deposition. His Nanocrystal research is multidisciplinary, relying on both Scanning tunneling microscope and Germanium.
His primary scientific interests are in Optoelectronics, Nanotechnology, Silicon, Nanowire and Chemical vapor deposition. His Optoelectronics study combines topics from a wide range of disciplines, such as Substrate and Epitaxy. His Nanotechnology research focuses on subjects like Copolymer, which are linked to Thin film.
His Silicon research is multidisciplinary, incorporating perspectives in Oxide, Nanoelectronics, Scanning electron microscope, Quantum dot and Nanocrystal. The concepts of his Nanowire study are interwoven with issues in Field-effect transistor, Condensed matter physics, Photonics and Catalysis. Within one scientific family, Thierry Baron focuses on topics pertaining to Doping under Chemical vapor deposition, and may sometimes address concerns connected to Molecular beam epitaxy.
His primary areas of investigation include Optoelectronics, Silicon, Nanowire, Substrate and Chemical vapor deposition. His Optoelectronics research integrates issues from Laser and Epitaxy. The various areas that Thierry Baron examines in his Silicon study include Thin film, Nanotechnology, Quantum well, Electrical resistivity and conductivity and Band gap.
His Nanotechnology research includes elements of Polishing, Microstructure and Silicon dioxide. His studies deal with areas such as Alloy, Scattering and Silicon-germanium as well as Nanowire. Thierry Baron interconnects Layer and Chemical engineering in the investigation of issues within Chemical vapor deposition.
Thierry Baron mainly investigates Optoelectronics, Chemical vapor deposition, Substrate, Silicon and Quantum dot. His Optoelectronics study focuses mostly on Photonics, Semiconductor and Photonic integrated circuit. His research in Chemical vapor deposition intersects with topics in Layer, Metalorganic vapour phase epitaxy, Molecular beam epitaxy and Chemical engineering.
His Quantum dot research incorporates elements of Laser, Lasing threshold and Quantum dot laser. In his study, which falls under the umbrella issue of Doping, Nanotechnology is strongly linked to Surface roughness. The Vapor–liquid–solid method research Thierry Baron does as part of his general Nanowire study is frequently linked to other disciplines of science, such as Spectroscopy, therefore creating a link between diverse domains of science.
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Size effects in mechanical deformation and fracture of cantilevered silicon nanowires.
Michael J. Gordon;Thierry Baron;Florian Dhalluin;Pascal Gentile.
Nano Letters (2009)
Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices
B. De Salvo;G. Ghibaudo;G. Pananakakis;P. Masson.
IEEE Transactions on Electron Devices (2001)
Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications
M. Kanoun;A. Souifi;T. Baron;F. Mazen.
Applied Physics Letters (2004)
Chemical vapor deposition of Ge nanocrystals on SiO2
T. Baron;B. Pelissier;L. Perniola;F. Mazen.
Applied Physics Letters (2003)
Laser diodes based on beryllium-chalcogenides
A. Waag;F. Fischer;K. Schüll;T. Baron.
Applied Physics Letters (1997)
Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices
T. Baron;F. Martin;P. Mur;C. Wyon.
Journal of Crystal Growth (2000)
Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales
Cédric Sire;Serge Blonkowski;Michael J. Gordon;Thierry Baron.
Applied Physics Letters (2007)
Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)
Barbara De Salvo;C. Gerardi;R. van Schaijk;S.A. Lombardo.
IEEE Transactions on Device and Materials Reliability (2004)
Single-electron charging effect in individual Si nanocrystals
T. Baron;P. Gentile;N. Magnea;P. Mur.
Applied Physics Letters (2001)
How far will silicon nanocrystals push the scaling limits of NVMs technologies
B. De Salvo;C. Gerardi;S. Lombardo;T. Baron.
international electron devices meeting (2003)
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