World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
48
Citations
7316
World Ranking
10918
National Ranking
328

Thierry Baron publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Thierry Baron sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 368 publications — 73rd percentile

73% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Thierry Baron D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Thierry Baron sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 48 D-Index — 17th percentile

17% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Thierry Baron is affiliated with Grenoble Alpes University in France and has a body of research primarily focused on engineering and physics, particularly within the domains of electrical and electronic engineering and atomic and molecular physics, and optics.

The scientist's recent research outputs span a variety of topics related to semiconductor and photonic technologies. Publications include studies on semiconductor quantum structures and devices, photonic and optical devices, nanowire synthesis and applications, and semiconductor lasers and optical devices.

Selected recent papers by Thierry Baron include:

  • "Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)", 2020, Nature Communications
  • "Room-temperature continuous-wave topological Dirac-vortex microcavity lasers on silicon", 2023, Light Science & Applications
  • "Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing", 2020, ACS Applied Materials & Interfaces
  • "Gallium Selenide Nanoribbons on Silicon Substrates for Photodetection", 2021, ACS Applied Nano Materials
  • "Digital twin design requirements in downgraded situations management", 2021, IFAC-PapersOnLine

The scientist has frequently published in the following venues:

  • Microelectronic Engineering
  • SSRN Electronic Journal
  • ACS Applied Nano Materials
  • Advanced Optical Materials
  • ACS Photonics

Thierry Baron has collaborated extensively with several researchers, including:

  • M. Martin, with 24 joint publications
  • F. Bassani, with 10 joint publications
  • J. Moeyaert, with 10 joint publications
  • Mingchu Tang, with 9 joint publications
  • Huiyun Liu, with 9 joint publications

The scientist's primary fields of study include:

  • Engineering, with 75 publications
  • Physics and Astronomy, with 38 publications

Within these fields, subfields with notable contributions include:

  • Electrical and Electronic Engineering (60 publications)
  • Atomic and Molecular Physics, and Optics (33 publications)
  • Biomedical Engineering (14 publications)
  • Materials Chemistry (8 publications)
  • Condensed Matter Physics (5 publications)

Thierry Baron's main research topics encompass:

  • Semiconductor Quantum Structures and Devices (34 publications)
  • Photonic and Optical Devices (32 publications)
  • Nanowire Synthesis and Applications (22 publications)
  • Semiconductor materials and devices (20 publications)
  • Semiconductor Lasers and Optical Devices (18 publications)
  • Photonic Crystals and Applications (12 publications)
  • GaN-based semiconductor devices and materials (10 publications)

Best Publications

  • Size effects in mechanical deformation and fracture of cantilevered silicon nanowires.

    Michael J. Gordon;Thierry Baron;Florian Dhalluin;Pascal Gentile

  • Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

    B. De Salvo;G. Ghibaudo;G. Pananakakis;P. Masson

  • Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications

    M. Kanoun;A. Souifi;T. Baron;F. Mazen

  • Laser diodes based on beryllium-chalcogenides

    A. Waag;F. Fischer;K. Schüll;T. Baron

  • Chemical vapor deposition of Ge nanocrystals on SiO2

    T. Baron;B. Pelissier;L. Perniola;F. Mazen

  • Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales

    Cédric Sire;Serge Blonkowski;Michael J. Gordon;Thierry Baron

  • Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices

    T. Baron;F. Martin;P. Mur;C. Wyon

  • Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

    R. Alcotte;M. Martin;J. Moeyaert;R. Cipro

  • Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates.

    Siming Chen;Mengya Liao;Mingchu Tang;Jiang Wu

  • Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)

    Barbara De Salvo;C. Gerardi;R. van Schaijk;S.A. Lombardo

  • Single-electron charging effect in individual Si nanocrystals

    T. Baron;P. Gentile;N. Magnea;P. Mur

  • How far will silicon nanocrystals push the scaling limits of NVMs technologies

    B. De Salvo;C. Gerardi;S. Lombardo;T. Baron

  • Silicon nanocrystal memories

    S. Lombardo;B. De Salvo;C. Gerardi;T. Baron

  • Massless Dirac Fermions in ZrTe2 Semimetal Grown on InAs(111) by van der Waals Epitaxy.

    Polychronis Tsipas;Dimitra Tsoutsou;Sotirios Fragkos;Roberto Sant

  • Novel beryllium containing II–VI compounds: basic properties and potential applications

    A. Waag;A. Waag;Th. Litz;F. Fischer;H.-J. Lugauer

  • Atomic force microscopy nanomanipulation of silicon nanocrystals for nanodevice fabrication

    Sébastien Decossas;Frédéric Mazen;Thierry Baron;Georges Brémond

  • Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001).

    Taojie Zhou;Mingchu Tang;Guohong Xiang;Boyuan Xiang

  • A Group-Delay-Based Chipless RFID Humidity Tag Sensor Using Silicon Nanowires

    R. S. Nair;E. Perret;S. Tedjini;T. Baron

  • Toward a Reliable Chipless RFID Humidity Sensor Tag Based on Silicon Nanowires

    Arnaud Vena;Etienne Perret;Darine Kaddour;Thierry Baron

  • Electronic properties of Ge nanocrystals for non volatile memory applications

    M. Kanoun;C. Busseret;A. Poncet;A. Souifi

  • Nitrogen doping of Te-based II–VI compounds during growth by molecular beam epitaxy

    T. Baron;K. Saminadayar;N. Magnea

Frequent Co-Authors

Jean-Luc Rouvière
Jean-Luc Rouvière Grenoble Alpes University
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
B. De Salvo
B. De Salvo Meta for Business
Huiyun Liu
Huiyun Liu University College London
Andreas Waag
Andreas Waag Technische Universität Braunschweig
Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS
Eric Tournié
Eric Tournié University of Montpellier
Thomas Ernst
Thomas Ernst Grenoble Alpes University
Jens Kreisel
Jens Kreisel University of Luxembourg

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