Jean-Luc Rouvière focuses on Electron diffraction, Optoelectronics, Reflection high-energy electron diffraction, Transmission electron microscopy and Molecular beam epitaxy. His research integrates issues of Crystallography, Molecular physics and Analytical chemistry in his study of Electron diffraction. Quantum dot and Photoluminescence are the primary areas of interest in his Optoelectronics study.
His Reflection high-energy electron diffraction research integrates issues from Precession electron diffraction, Condensed matter physics and Energy filtered transmission electron microscopy. His Transmission electron microscopy research is multidisciplinary, incorporating elements of Wide-bandgap semiconductor and Epitaxy. In his research, Microscopy, Stranski–Krastanov growth, Substrate and Pulmonary surfactant is intimately related to Electron microscope, which falls under the overarching field of Molecular beam epitaxy.
His primary areas of study are Optoelectronics, Molecular beam epitaxy, Condensed matter physics, Quantum dot and Transmission electron microscopy. His Molecular beam epitaxy research incorporates themes from Superlattice, Substrate, Luminescence and Reflection high-energy electron diffraction. His research in Condensed matter physics intersects with topics in Stress relaxation, Monolayer, Wurtzite crystal structure and Lattice constant.
His research in the fields of Wetting layer overlaps with other disciplines such as Nucleation. His Transmission electron microscopy research includes themes of Crystallography, Silicon and Analytical chemistry. The various areas that Jean-Luc Rouvière examines in his Crystallography study include Electron diffraction and Metalorganic vapour phase epitaxy.
His primary areas of study are Optics, Electron holography, Electron diffraction, Optoelectronics and Scanning transmission electron microscopy. His Electron diffraction research focuses on Reflection high-energy electron diffraction in particular. His biological study spans a wide range of topics, including Molecular beam epitaxy and Nanotechnology.
His research in Molecular beam epitaxy tackles topics such as Photoluminescence which are related to areas like Luminescence, Annealing, Light-emitting diode and Mole fraction. His biological study deals with issues like Quantum dot, which deal with fields such as Crystal twinning and Thin film. Jean-Luc Rouvière combines subjects such as Molecular physics, Silicon and Analytical chemistry with his study of Transmission electron microscopy.
Jean-Luc Rouvière focuses on Optics, Dark field microscopy, Electron holography, Semiconductor device and Electron diffraction. Jean-Luc Rouvière has included themes like Wide-bandgap semiconductor and Nanowire in his Optics study. In his study, Analytical chemistry is inextricably linked to Electron energy loss spectroscopy, which falls within the broad field of Electron diffraction.
His work in Reflection high-energy electron diffraction addresses issues such as High-resolution transmission electron microscopy, which are connected to fields such as Energy filtered transmission electron microscopy. His studies deal with areas such as Luminescence, Molecular beam epitaxy, Scanning confocal electron microscopy and Photoluminescence as well as Scanning transmission electron microscopy. His Optoelectronics research is multidisciplinary, relying on both Self-assembly and Crystallite.
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Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN
B. Daudin;F. Widmann;G. Feuillet;Y. Samson.
Physical Review B (1997)
Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect
F. Widmann;J. Simon;B. Daudin;G. Feuillet.
Physical Review B (1998)
Growth kinetics and optical properties of self-organized GaN quantum dots
F. Widmann;B. Daudin;G. Feuillet;Y. Samson.
Journal of Applied Physics (1998)
POLARITY DETERMINATION OF GAN FILMS BY ION CHANNELING AND CONVERGENT BEAM ELECTRON DIFFRACTION
B. Daudin;J. L. Rouvière;M. Arlery.
Applied Physics Letters (1996)
Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals
J. L. Rouviere;J. L. Weyher;M. Seelmann-Eggebert;S. Porowski.
Applied Physics Letters (1998)
Confirmation of the domino-cascade model by lifepo4/fepo 4 precession electron diffraction
G. Brunetti;D. Robert;P. Bayle-Guillemaud;J.L. Rouvière.
Chemistry of Materials (2011)
Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations
L. Clément;R. Pantel;L. F. Tz. Kwakman;J. L. Rouvière.
Applied Physics Letters (2004)
Improved quality GaN grown by molecular beam epitaxy using In as a surfactant
F. Widmann;B. Daudin;G. Feuillet;N. Pelekanos.
Applied Physics Letters (1998)
Theoretical discussions on the geometrical phase analysis.
J.L. Rouvière;E. Sarigiannidou.
Improved precision in strain measurement using nanobeam electron diffraction
A. Béché;J. L. Rouvière;L. Clément;J. M. Hartmann.
Applied Physics Letters (2009)
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