World's Best Scientists 2026 revealed!
Jean-Luc Rouvière

Jean-Luc Rouvière

D-Index & Metrics

Materials Science

D-Index
52
Citations
9282
World Ranking
9605
National Ranking
268

Jean-Luc Rouvière publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jean-Luc Rouvière sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 287 publications — 57th percentile

57% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Jean-Luc Rouvière D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jean-Luc Rouvière sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 52 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Jean-Luc Rouvière is affiliated with Grenoble Alpes University in France. Their research spans multiple fields, primarily focusing on materials science, engineering, and physics and astronomy. They have contributed to these disciplines through a combination of experimental techniques, material synthesis, and device characterization.

The main fields of study for Rouvière include:

  • Materials Science
  • Engineering
  • Physics and Astronomy

Their work covers several subfields, notably:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Biomedical Engineering

Key research topics addressed by Rouvière involve:

  • GaN-based semiconductor devices and materials
  • Advanced Electron Microscopy Techniques and Applications
  • Chalcogenide Semiconductor Thin Films
  • Electron and X-Ray Spectroscopy Techniques
  • Ga2O3 and related materials
  • Quantum Dots Synthesis And Properties
  • 2D Materials and Applications

Rouvière has published numerous papers, among which the recent notable works include:

  • "Improved measurement of electric fields by nanobeam precession electron diffraction," 2020, Journal of Applied Physics
  • "Assessment of Active Dopants and p-n Junction Abruptness Using In Situ Biased 4D-STEM," 2022, Nano Letters
  • "The influence of illumination conditions in the measurement of built-in electric field at p-n junctions by 4D-STEM," 2022, Applied Physics Letters
  • "The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes," 2020, Nanotechnology
  • "Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting," 2022, Applied Surface Science

Frequent co-authors collaborating with Rouvière include:

  • Hanako Okuno
  • M. den Hertog
  • E. Monroy
  • B. Daudin
  • David Cooper

Their publications are often featured in established venues such as:

  • Nanotechnology
  • arXiv (Cornell University)
  • BIO Web of Conferences
  • Journal of Applied Physics
  • Applied Physics Letters

Best Publications

  • Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN

    B. Daudin;F. Widmann;G. Feuillet;Y. Samson

  • Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect

    F. Widmann;J. Simon;B. Daudin;G. Feuillet

  • Growth kinetics and optical properties of self-organized GaN quantum dots

    F. Widmann;B. Daudin;G. Feuillet;Y. Samson

  • POLARITY DETERMINATION OF GAN FILMS BY ION CHANNELING AND CONVERGENT BEAM ELECTRON DIFFRACTION

    B. Daudin;J. L. Rouvière;M. Arlery

  • Theoretical discussions on the geometrical phase analysis.

    J.L. Rouvière;E. Sarigiannidou

  • Confirmation of the domino-cascade model by lifepo4/fepo 4 precession electron diffraction

    G. Brunetti;D. Robert;P. Bayle-Guillemaud;J.L. Rouvière

  • Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals

    J. L. Rouviere;J. L. Weyher;M. Seelmann-Eggebert;S. Porowski

  • Crystal structure and band gap determination of HfO2 thin films

    Marie C. Cheynet;Simone Pokrant;Frans D. Tichelaar;Jean-Luc Rouvière

  • Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations

    L. Clément;R. Pantel;L. F. Tz. Kwakman;J. L. Rouvière

  • Improved quality GaN grown by molecular beam epitaxy using In as a surfactant

    F. Widmann;B. Daudin;G. Feuillet;N. Pelekanos

  • Improved precision in strain measurement using nanobeam electron diffraction

    A. Béché;J. L. Rouvière;L. Clément;J. M. Hartmann

  • Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron holography.

    A. Béché;J.L. Rouvière;J.P. Barnes;D. Cooper

  • Recent advances in defect-selective etching of GaN

    J.L Weyher;J.L Weyher;P.D Brown;J.L Rouvière;T Wosinski

  • Improved strain precision with high spatial resolution using nanobeam precession electron diffraction

    Jean-Luc Rouviere;Armand Béché;Yannick Martin;Thibaud Denneulin

  • Growth of aluminum nitride on (111) silicon: Microstructure and interface structure

    A. Bourret;A. Barski;J. L. Rouvière;G. Renaud

  • Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope

    David Cooper;Thibaud Denneulin;Nicolas Bernier;Armand Béché

  • Strain relaxation in (0001) AlN/GaN heterostructures

    Alain Bourret;Christoph Adelmann;Bruno Daudin;Jean-Luc Rouvière

  • Control of gold surface diffusion on Si nanowires

    Martien I. den Hertog;Jean-Luc. Rouviere;Florian Dhalluin;Pierre J. Desré

  • Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy

    M. Arlery;J. L. Rouvière;F. Widmann;B. Daudin

  • Transmission electron microscopy structural characterisation of GaN layers grown on (0001) sapphire

    J.L. Rouviere;M. Arlery;B. Daudin;G. Feuillet

  • Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins.

    C. Cayron;M. Den Hertog;L. Latu-Romain;C. Mouchet

Frequent Co-Authors

B. Daudin
B. Daudin Grenoble Alpes University
Thierry Baron
Thierry Baron Grenoble Alpes University
Eva Monroy
Eva Monroy Grenoble Alpes University
David K. C. Cooper
David K. C. Cooper University of Pittsburgh
Jian-Min Zuo
Jian-Min Zuo University of Illinois at Urbana-Champaign
Nicolas Grandjean
Nicolas Grandjean École Polytechnique Fédérale de Lausanne
Christian Colliex
Christian Colliex University of Paris-Saclay
Rafal E. Dunin-Borkowski
Rafal E. Dunin-Borkowski Forschungszentrum Jülich

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