2026 Jean-Luc Rouvière: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	52	9607	9278	268	258	287	9282

Overview

Jean-Luc Rouvière is affiliated with Grenoble Alpes University in France. Their research spans multiple fields, primarily focusing on materials science, engineering, and physics and astronomy. They have contributed to these disciplines through a combination of experimental techniques, material synthesis, and device characterization.

The main fields of study for Rouvière include:

Materials Science
Engineering
Physics and Astronomy

Their work covers several subfields, notably:

Materials Chemistry
Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Biomedical Engineering

Key research topics addressed by Rouvière involve:

GaN-based semiconductor devices and materials
Advanced Electron Microscopy Techniques and Applications
Chalcogenide Semiconductor Thin Films
Electron and X-Ray Spectroscopy Techniques
Ga2O3 and related materials
Quantum Dots Synthesis And Properties
2D Materials and Applications

Rouvière has published numerous papers, among which the recent notable works include:

"Improved measurement of electric fields by nanobeam precession electron diffraction," 2020, Journal of Applied Physics
"Assessment of Active Dopants and p-n Junction Abruptness Using In Situ Biased 4D-STEM," 2022, Nano Letters
"The influence of illumination conditions in the measurement of built-in electric field at p-n junctions by 4D-STEM," 2022, Applied Physics Letters
"The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes," 2020, Nanotechnology
"Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting," 2022, Applied Surface Science

Frequent co-authors collaborating with Rouvière include:

Hanako Okuno
M. den Hertog
E. Monroy
B. Daudin
David Cooper

Their publications are often featured in established venues such as:

Nanotechnology
arXiv (Cornell University)
BIO Web of Conferences
Journal of Applied Physics
Applied Physics Letters

Best Publications

Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN

B. Daudin;F. Widmann;G. Feuillet;Y. Samson

483
Citations
Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect

F. Widmann;J. Simon;B. Daudin;G. Feuillet

368
Citations
Growth kinetics and optical properties of self-organized GaN quantum dots

F. Widmann;B. Daudin;G. Feuillet;Y. Samson

309
Citations
POLARITY DETERMINATION OF GAN FILMS BY ION CHANNELING AND CONVERGENT BEAM ELECTRON DIFFRACTION

B. Daudin;J. L. Rouvière;M. Arlery

266
Citations
Theoretical discussions on the geometrical phase analysis.

J.L. Rouvière;E. Sarigiannidou

236
Citations
Confirmation of the domino-cascade model by lifepo4/fepo 4 precession electron diffraction

G. Brunetti;D. Robert;P. Bayle-Guillemaud;J.L. Rouvière

230
Citations
Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals

J. L. Rouviere;J. L. Weyher;M. Seelmann-Eggebert;S. Porowski

220
Citations
Crystal structure and band gap determination of HfO2 thin films

Marie C. Cheynet;Simone Pokrant;Frans D. Tichelaar;Jean-Luc Rouvière

216
Citations
Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations

L. Clément;R. Pantel;L. F. Tz. Kwakman;J. L. Rouvière

198
Citations
Improved quality GaN grown by molecular beam epitaxy using In as a surfactant

F. Widmann;B. Daudin;G. Feuillet;N. Pelekanos

192
Citations
Improved precision in strain measurement using nanobeam electron diffraction

A. Béché;J. L. Rouvière;L. Clément;J. M. Hartmann

191
Citations
Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron holography.

A. Béché;J.L. Rouvière;J.P. Barnes;D. Cooper

179
Citations
Recent advances in defect-selective etching of GaN

J.L Weyher;J.L Weyher;P.D Brown;J.L Rouvière;T Wosinski

171
Citations
Improved strain precision with high spatial resolution using nanobeam precession electron diffraction

Jean-Luc Rouviere;Armand Béché;Yannick Martin;Thibaud Denneulin

153
Citations
Growth of aluminum nitride on (111) silicon: Microstructure and interface structure

A. Bourret;A. Barski;J. L. Rouvière;G. Renaud

153
Citations
Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope

David Cooper;Thibaud Denneulin;Nicolas Bernier;Armand Béché

151
Citations
Strain relaxation in (0001) AlN/GaN heterostructures

Alain Bourret;Christoph Adelmann;Bruno Daudin;Jean-Luc Rouvière

139
Citations
Control of gold surface diffusion on Si nanowires

Martien I. den Hertog;Jean-Luc. Rouviere;Florian Dhalluin;Pierre J. Desré

137
Citations
Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy

M. Arlery;J. L. Rouvière;F. Widmann;B. Daudin

131
Citations
Transmission electron microscopy structural characterisation of GaN layers grown on (0001) sapphire

J.L. Rouviere;M. Arlery;B. Daudin;G. Feuillet

121
Citations
Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins.

C. Cayron;M. Den Hertog;L. Latu-Romain;C. Mouchet

120
Citations