B. Daudin

Best Publications

• Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN

  B. Daudin;F. Widmann;G. Feuillet;Y. Samson

  483
  Citations

• Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect

  F. Widmann;J. Simon;B. Daudin;G. Feuillet

  368
  Citations

• Growth kinetics and optical properties of self-organized GaN quantum dots

  F. Widmann;B. Daudin;G. Feuillet;Y. Samson

  309
  Citations

• From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer

  R. Songmuang;O. Landré;B. Daudin

  296
  Citations

• POLARITY DETERMINATION OF GAN FILMS BY ION CHANNELING AND CONVERGENT BEAM ELECTRON DIFFRACTION

  B. Daudin;J. L. Rouvière;M. Arlery

  266
  Citations

• Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

  C. Adelmann;J. Brault;D. Jalabert;P. Gentile

  237
  Citations

• Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots

  Julia Simon;Julia Simon;N.T. Pelekanos;Christoph Adelmann;Esteban Martínez-Guerrero

  230
  Citations

• Self-assembled InGaN quantum dots grown by molecular-beam epitaxy

  C. Adelmann;J. Simon;G. Feuillet;N. T. Pelekanos

  212
  Citations

• Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001)

  Guido Mula;Guido Mula;C. Adelmann;S. Moehl;J. Oullier

  194
  Citations

• Improved quality GaN grown by molecular beam epitaxy using In as a surfactant

  F. Widmann;B. Daudin;G. Feuillet;N. Pelekanos

  192
  Citations

• Gallium adsorption on (0001) GaN surfaces

  Christoph Adelmann;Julien Brault;Guido Mula;Bruno Daudin

  191
  Citations

• Anisotropic morphology of nonpolar a-plane GaN quantum dots and quantum wells

  S. Founta;C. Bougerol;H. Mariette;B. Daudin

  175
  Citations

• Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE

  G Tourbot;C Bougerol;A Grenier;M Den Hertog

  152
  Citations

• Strain relaxation in (0001) AlN/GaN heterostructures

  Alain Bourret;Christoph Adelmann;Bruno Daudin;Jean-Luc Rouvière

  139
  Citations

• Evidence for quantum-confined Stark effect in GaN/AlN quantum dots in nanowires

  Julien Renard;Rudeesun Songmuang;Gabriel Tourbot;Catherine Bougerol

  138
  Citations

• Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN

  N. Gogneau;D. Jalabert;E. Monroy;T. Shibata

  137
  Citations

• Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)

  Karine Hestroffer;Cédric Leclere;Catherine Bougerol;Hubert Renevier

  135
  Citations

• Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy

  M. Arlery;J. L. Rouvière;F. Widmann;B. Daudin

  131
  Citations

• Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy

  O. Landre;C. Bougerol;Hubert Renevier;Bruno Daudin

  130
  Citations

• Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy

  A. Helman;M. Tchernycheva;A. Lusson;E. Warde

  125
  Citations

• Transmission electron microscopy structural characterisation of GaN layers grown on (0001) sapphire

  J.L. Rouviere;M. Arlery;B. Daudin;G. Feuillet

  121
  Citations