B. Daudin

B. Daudin publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where B. Daudin sits on this spectrum.

B. Daudin D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where B. Daudin sits on this spectrum.

Best Publications

• Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN

  B. Daudin;F. Widmann;G. Feuillet;Y. Samson

  483
  Citations

• Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect

  F. Widmann;J. Simon;B. Daudin;G. Feuillet

  368
  Citations

• Growth kinetics and optical properties of self-organized GaN quantum dots

  F. Widmann;B. Daudin;G. Feuillet;Y. Samson

  309
  Citations

• From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer

  R. Songmuang;O. Landré;B. Daudin

  296
  Citations

• POLARITY DETERMINATION OF GAN FILMS BY ION CHANNELING AND CONVERGENT BEAM ELECTRON DIFFRACTION

  B. Daudin;J. L. Rouvière;M. Arlery

  266
  Citations

• Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

  C. Adelmann;J. Brault;D. Jalabert;P. Gentile

  237
  Citations

• Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots

  Julia Simon;Julia Simon;N.T. Pelekanos;Christoph Adelmann;Esteban Martínez-Guerrero

  230
  Citations

• Self-assembled InGaN quantum dots grown by molecular-beam epitaxy

  C. Adelmann;J. Simon;G. Feuillet;N. T. Pelekanos

  212
  Citations

• Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001)

  Guido Mula;Guido Mula;C. Adelmann;S. Moehl;J. Oullier

  194
  Citations

• Improved quality GaN grown by molecular beam epitaxy using In as a surfactant

  F. Widmann;B. Daudin;G. Feuillet;N. Pelekanos

  192
  Citations

• Gallium adsorption on (0001) GaN surfaces

  Christoph Adelmann;Julien Brault;Guido Mula;Bruno Daudin

  191
  Citations

• Anisotropic morphology of nonpolar a-plane GaN quantum dots and quantum wells

  S. Founta;C. Bougerol;H. Mariette;B. Daudin

  175
  Citations

• Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE

  G Tourbot;C Bougerol;A Grenier;M Den Hertog

  152
  Citations

• Strain relaxation in (0001) AlN/GaN heterostructures

  Alain Bourret;Christoph Adelmann;Bruno Daudin;Jean-Luc Rouvière

  139
  Citations

• Evidence for quantum-confined Stark effect in GaN/AlN quantum dots in nanowires

  Julien Renard;Rudeesun Songmuang;Gabriel Tourbot;Catherine Bougerol

  138
  Citations

• Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN

  N. Gogneau;D. Jalabert;E. Monroy;T. Shibata

  137
  Citations

• Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)

  Karine Hestroffer;Cédric Leclere;Catherine Bougerol;Hubert Renevier

  135
  Citations

• Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy

  M. Arlery;J. L. Rouvière;F. Widmann;B. Daudin

  131
  Citations

• Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy

  O. Landre;C. Bougerol;Hubert Renevier;Bruno Daudin

  130
  Citations

• Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy

  A. Helman;M. Tchernycheva;A. Lusson;E. Warde

  125
  Citations

• Transmission electron microscopy structural characterisation of GaN layers grown on (0001) sapphire

  J.L. Rouviere;M. Arlery;B. Daudin;G. Feuillet

  121
  Citations