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D-Index & Metrics

Materials Science

D-Index
64
Citations
15601
World Ranking
5856
National Ranking
346

Achim Trampert publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Achim Trampert sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 461 publications — 83rd percentile

83% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Achim Trampert D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Achim Trampert sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 64 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Achim Trampert is affiliated with the Paul Drude Institute for Solid State Electronics in Germany. Their research spans the fields of Materials Science, Physics and Astronomy, and Engineering, with extensive work in subfields such as Materials Chemistry, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, and Electronic, Optical and Magnetic Materials.

The primary focus of Trampert's research lies in semiconductor materials and devices. Key topics covered in their work include GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, ZnO doping and properties, Ga2O3 and related materials, Electronic and Structural Properties of Oxides, Nanowire Synthesis and Applications, and Graphene research and applications.

Trampert has contributed to numerous publications, with frequent appearances in the following venues:

  • arXiv (Cornell University)
  • Applied Physics Letters
  • SSRN Electronic Journal
  • Nanotechnology
  • Journal of Crystal Growth

Recent papers authored or coauthored by Trampert include:

  • "Crystal Phase Control during Epitaxial Hybridization of III-V Semiconductors with Silicon," 2021, Advanced Electronic Materials
  • "SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes," 2022, Applied Physics Letters
  • "Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1," 2023, Japanese Journal of Applied Physics
  • "Large-Area Synthesis of Ferromagnetic Fe5−xGeTe2/Graphene van der Waals Heterostructures with Curie Temperature above Room Temperature," 2023, Small
  • "Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems," 2023, Physical Review Materials

Frequent coauthors include:

  • O. Brandt
  • Jonas Lähnemann
  • Lutz Geelhaar
  • P. John
  • Thomas Auzelle

Best Publications

  • Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

    P. Waltereit;O. Brandt;A. Trampert;H. T. Grahn

  • X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films

    V. M. Kaganer;O. Brandt;A. Trampert;K. H. Ploog

  • Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H–SiC(0001) by reactive molecular-beam epitaxy

    S. Dhar;O. Brandt;A. Trampert;L. Däweritz

  • Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction.

    Yongmin He;Peng-Yi Tang;Peng-Yi Tang;Zhili Hu;Zhili Hu;Qiyuang He

  • On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

    Jelena Ristić;Enrique Calleja;Sergio Fernández-Garrido;Laurent Cerutti

  • Growth, morphology, and structural properties of group-III-nitride nanocolumns and nanodisks

    E. Calleja;J. Ristić;S. Fernández-Garrido;L. Cerutti;L. Cerutti

  • Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius

    Vincent Consonni;M. Knelangen;L. Geelhaar;A. Trampert

  • Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy

    L. Cerutti;J. Ristić;S. Fernández-Garrido;E. Calleja

  • Correlation of structure and magnetism in GaAs with embedded Mn(Ga)As magnetic nanoclusters

    M. Moreno;A. Trampert;B. Jenichen;L. Däweritz

  • Impact of nucleation conditions on the structural and optical properties of M-plane GaN(11̄00) grown on γ-LiAlO2

    Yue Jun Sun;Oliver Brandt;Uwe Jahn;Tian Yu Liu

  • Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K

    S. Dhar;L. Pérez;O. Brandt;A. Trampert

  • Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

    W. Bergbauer;W. Bergbauer;M. Strassburg;Ch Kölper;N. Linder

  • The nanorod approach: GaN NanoLEDs for solid state lighting

    Andreas Waag;Xue Wang;Sönke Fündling;Johannes Ledig

  • High resolution transmission electron microscopy studies of the Ag/MgO interface

    A. Trampert;F. Ernst;C.P. Flynn;H.F. Fischmeister

  • Characterization of GaN quantum discs embedded in Al x Ga 1 − x N nanocolumns grown by molecular beam epitaxy

    J. Ristić;E. Calleja;M. A. Sánchez-García;J. M. Ulloa

  • Clustering in a precipitate-free GeMn magnetic semiconductor

    Dominique Bougeard;S. Ahlers;A. Trampert;N. Sircar

  • Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC(0001)

    P. Waltereit;O. Brandt;A. Trampert;M. Ramsteiner

  • Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer

    Vincent Consonni;M. Hanke;M. Knelangen;L. Geelhaar

  • Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer

    Peng Yu;Junhao Lin;Linfeng Sun;Quang Luan Le

  • Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy

    O. Brandt;R. Muralidharan;P. Waltereit;A. Thamm

  • Observation of spin-glass behavior in homogeneous (Ga, Mn)N layers grown by reactive molecular-beam epitaxy

    S. Dhar;O. Brandt;A. Trampert;K. J. Friedland

Frequent Co-Authors

Oliver Brandt
Oliver Brandt Paul Drude Institute for Solid State Electronics
K. H. Ploog
K. H. Ploog National Sun Yat-sen University
Henning Riechert
Henning Riechert Infineon Technologies (Germany)
Lutz Geelhaar
Lutz Geelhaar Paul Drude Institute for Solid State Electronics
Eric Tournié
Eric Tournié University of Montpellier
Jean-Baptiste Rodriguez
Jean-Baptiste Rodriguez University of Montpellier
Biswarup Satpati
Biswarup Satpati Saha Institute of Nuclear Physics
Andreas Waag
Andreas Waag Technische Universität Braunschweig
R Richard Nötzel
R Richard Nötzel South China Normal University
Mircea Guina
Mircea Guina Tampere University

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