His primary areas of study are Condensed matter physics, Molecular beam epitaxy, Transmission electron microscopy, Optoelectronics and Nucleation. Achim Trampert works mostly in the field of Condensed matter physics, limiting it down to topics relating to Epitaxy and, in certain cases, X-ray crystallography, Thin film and Analytical chemistry. To a larger extent, Achim Trampert studies Nanotechnology with the aim of understanding Molecular beam epitaxy.
His Transmission electron microscopy research is multidisciplinary, incorporating elements of Crystallography, Wide-bandgap semiconductor, Lattice and Photoluminescence. Achim Trampert has included themes like Quantum well, Metalorganic vapour phase epitaxy and Nanorod in his Optoelectronics study. His studies in Light-emitting diode integrate themes in fields like Luminous efficacy, Diode and Incandescent light bulb.
The scientist’s investigation covers issues in Molecular beam epitaxy, Optoelectronics, Epitaxy, Transmission electron microscopy and Condensed matter physics. He has researched Molecular beam epitaxy in several fields, including Crystallography, Nanowire, Substrate and Nucleation. His Optoelectronics research incorporates elements of Quantum well and Metalorganic vapour phase epitaxy.
The concepts of his Epitaxy study are interwoven with issues in Phase, Diffraction, Superlattice and Analytical chemistry. His work deals with themes such as Alloy, Thin film, Electron diffraction and Stacking, which intersect with Transmission electron microscopy. His Condensed matter physics study combines topics from a wide range of disciplines, such as Amorphous solid and Anisotropy.
His scientific interests lie mostly in Nanowire, Molecular beam epitaxy, Transmission electron microscopy, Optoelectronics and Condensed matter physics. His Nanowire research includes themes of Reciprocal lattice, Heterojunction and Photoluminescence. His Molecular beam epitaxy study integrates concerns from other disciplines, such as FOIL method, Relaxation, Semiconductor, Sapphire and Substrate.
His Transmission electron microscopy research incorporates elements of Crystallography, Spectroscopy, Stacking and Epitaxy. The study incorporates disciplines such as Characterization and Crystallographic defect in addition to Optoelectronics. His Condensed matter physics research is multidisciplinary, incorporating elements of Vicinal and Scanning transmission electron microscopy.
Achim Trampert mostly deals with Nanowire, Molecular beam epitaxy, Optoelectronics, Nanotechnology and Nanostructure. The various areas that he examines in his Nanowire study include Wide-bandgap semiconductor, Condensed matter physics, Semiconductor and Deformation. His Condensed matter physics study which covers Infinitesimal strain theory that intersects with Diffraction.
His Molecular beam epitaxy research is multidisciplinary, relying on both Relaxation, Nanorod and Bilayer graphene, Graphene, Graphene oxide paper. The Optoelectronics study combines topics in areas such as Metalorganic vapour phase epitaxy, Fin, Crystallographic defect, One-Step and Laser. As a part of the same scientific study, Achim Trampert usually deals with the Nanostructure, concentrating on Heterojunction and frequently concerns with Homogeneity and Light-emitting diode.
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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
P. Waltereit;O. Brandt;A. Trampert;H. T. Grahn.
Nature (2000)
Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H–SiC(0001) by reactive molecular-beam epitaxy
S. Dhar;O. Brandt;A. Trampert;L. Däweritz.
Applied Physics Letters (2003)
On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy
Jelena Ristić;Enrique Calleja;Sergio Fernández-Garrido;Laurent Cerutti.
Journal of Crystal Growth (2008)
X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films
V. M. Kaganer;O. Brandt;A. Trampert;K. H. Ploog.
Physical Review B (2005)
Growth, morphology, and structural properties of group-III-nitride nanocolumns and nanodisks
E. Calleja;J. Ristić;S. Fernández-Garrido;L. Cerutti;L. Cerutti.
Physica Status Solidi B-basic Solid State Physics (2007)
Correlation of structure and magnetism in GaAs with embedded Mn(Ga)As magnetic nanoclusters
M. Moreno;A. Trampert;B. Jenichen;L. Däweritz.
Journal of Applied Physics (2002)
Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy
L. Cerutti;J. Ristić;S. Fernández-Garrido;E. Calleja.
Applied Physics Letters (2006)
Impact of nucleation conditions on the structural and optical properties of M-plane GaN(11̄00) grown on γ-LiAlO2
Yue Jun Sun;Oliver Brandt;Uwe Jahn;Tian Yu Liu.
Journal of Applied Physics (2002)
Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius
Vincent Consonni;M. Knelangen;L. Geelhaar;A. Trampert.
Physical Review B (2010)
Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K
S. Dhar;L. Pérez;O. Brandt;A. Trampert.
Physical Review B (2005)
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