Achim Trampert

Overview

Best Publications

• Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

  P. Waltereit;O. Brandt;A. Trampert;H. T. Grahn

  2190
  Citations

• X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films

  V. M. Kaganer;O. Brandt;A. Trampert;K. H. Ploog

  257
  Citations

• Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H–SiC(0001) by reactive molecular-beam epitaxy

  S. Dhar;O. Brandt;A. Trampert;L. Däweritz

  251
  Citations

• Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction.

  Yongmin He;Peng-Yi Tang;Peng-Yi Tang;Zhili Hu;Zhili Hu;Qiyuang He

  249
  Citations

• On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

  Jelena Ristić;Enrique Calleja;Sergio Fernández-Garrido;Laurent Cerutti

  236
  Citations

• Growth, morphology, and structural properties of group-III-nitride nanocolumns and nanodisks

  E. Calleja;J. Ristić;S. Fernández-Garrido;L. Cerutti;L. Cerutti

  216
  Citations

• Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius

  Vincent Consonni;M. Knelangen;L. Geelhaar;A. Trampert

  205
  Citations

• Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy

  L. Cerutti;J. Ristić;S. Fernández-Garrido;E. Calleja

  195
  Citations

• Correlation of structure and magnetism in GaAs with embedded Mn(Ga)As magnetic nanoclusters

  M. Moreno;A. Trampert;B. Jenichen;L. Däweritz

  193
  Citations

• Impact of nucleation conditions on the structural and optical properties of M-plane GaN(11̄00) grown on γ-LiAlO2

  Yue Jun Sun;Oliver Brandt;Uwe Jahn;Tian Yu Liu

  191
  Citations

• Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K

  S. Dhar;L. Pérez;O. Brandt;A. Trampert

  182
  Citations

• Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

  W. Bergbauer;W. Bergbauer;M. Strassburg;Ch Kölper;N. Linder

  180
  Citations

• The nanorod approach: GaN NanoLEDs for solid state lighting

  Andreas Waag;Xue Wang;Sönke Fündling;Johannes Ledig

  179
  Citations

• High resolution transmission electron microscopy studies of the Ag/MgO interface

  A. Trampert;F. Ernst;C.P. Flynn;H.F. Fischmeister

  176
  Citations

• Characterization of GaN quantum discs embedded in Al x Ga 1 − x N nanocolumns grown by molecular beam epitaxy

  J. Ristić;E. Calleja;M. A. Sánchez-García;J. M. Ulloa

  171
  Citations

• Clustering in a precipitate-free GeMn magnetic semiconductor

  Dominique Bougeard;S. Ahlers;A. Trampert;N. Sircar

  165
  Citations

• Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC(0001)

  P. Waltereit;O. Brandt;A. Trampert;M. Ramsteiner

  160
  Citations

• Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer

  Vincent Consonni;M. Hanke;M. Knelangen;L. Geelhaar

  156
  Citations

• Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer

  Peng Yu;Junhao Lin;Linfeng Sun;Quang Luan Le

  154
  Citations

• Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy

  O. Brandt;R. Muralidharan;P. Waltereit;A. Thamm

  152
  Citations

• Observation of spin-glass behavior in homogeneous (Ga, Mn)N layers grown by reactive molecular-beam epitaxy

  S. Dhar;O. Brandt;A. Trampert;K. J. Friedland

  150
  Citations