World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
45
Citations
7494
World Ranking
11754
National Ranking
645

Raffaella Calarco publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Raffaella Calarco sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 196 publications — 29th percentile

29% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Raffaella Calarco D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Raffaella Calarco sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 45 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Raffaella Calarco is affiliated with the Leibniz Institute for Neurobiology in Germany. Their research primarily focuses on various aspects of materials science and engineering, with significant expertise in materials chemistry and electronic and electrical engineering. The scientist has contributed to advancing knowledge in phase-change materials and chalcogenides, including extensive work on chalcogenide semiconductor thin films.

The scientist's work spans several main research topics, including:

  • Phase-change materials and chalcogenides
  • Chalcogenide Semiconductor Thin Films
  • GaN-based semiconductor devices and materials
  • Quantum Dots Synthesis and Properties
  • 2D Materials and Applications
  • Advanced Thermoelectric Materials and Devices
  • Semiconductor Quantum Structures and Devices

Calarco has authored numerous publications, many appearing in well-regarded scientific venues. Frequent publication outlets include:

  • Nanomaterials
  • Physical Review Applied
  • arXiv (Cornell University)
  • Scientific Reports
  • Advanced Materials Interfaces

Recent papers illustrate the diversity and focus of Calarco's research:

  • "Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride" (2021), published in Nature Electronics
  • "Phonon anharmonicities and ultrafast dynamics in epitaxial Sb2Te3" (2020), published in Scientific Reports
  • "Carrier Diffusion in GaN: A Cathodoluminescence Study. III. Nature of Nonradiative Recombination at Threading Dislocations" (2022), published in Physical Review Applied
  • "Two-dimensional single crystal monoclinic gallium telluride on silicon substrate via transformation of epitaxial hexagonal phase" (2023), published in npj 2D Materials and Applications
  • "Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys" (2022), published in Nanomaterials

The scientist maintains collaborations with several frequent coauthors, including:

  • F. Arciprete
  • Eugenio Zallo
  • Stefano Cecchi
  • Massimo Longo
  • Caroline Chèze

Raffaella Calarco's subfields of study highlight their interdisciplinary approach, bridging physics and engineering disciplines:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Best Publications

  • Size-dependent Photoconductivity in MBE-Grown GaN -Nanowires

    Raffaella Calarco;Michel Marso;Thomas Richter;Ali I. Aykanat

  • Nucleation and Growth of GaN Nanowires on Si(111) Performed by Molecular Beam Epitaxy

    Raffaella Calarco;Ralph J. Meijers;Ratan K. Debnath;Toma Stoica

  • Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

    R. K. Debnath;R. Meijers;T. Richter;T. Stoica

  • Giant Rashba‐Type Spin Splitting in Ferroelectric GeTe(111)

    Marcus Liebmann;Christian Rinaldi;Domenico Di Sante;Jens Kellner

  • Interface and Wetting Layer Effect on the Catalyst‐Free Nucleation and Growth of GaN Nanowires

    Toma Stoica;Eli Sutter;Ralph J. Meijers;Ratan K. Debnath

  • Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires

    Toma Stoica;Ralph J. Meijers;Raffaella Calarco;Thomas Richter

  • Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb2Te3 superlattices

    Jamo Momand;Ruining Wang;Jos E. Boschker;Marcel A. Verheijen

  • Ferroelectric Control of the Spin Texture in GeTe

    Christian Rinaldi;Sara Varotto;Marco Asa;Jagoda Sławińska

  • Green luminescence in Mg-doped GaN

    Michael A. Reshchikov;Denis Demchenko;J. D. McNamara;S. Fernández-Garrido

  • Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer.

    T Schumann;T Gotschke;F Limbach;T Stoica

  • Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

    Sergio Fernández-Garrido;Xiang Kong;Tobias Gotschke;Raffaella Calarco

  • Surface-induced effects in GaN nanowires

    Raffaella Calarco;Toma Stoica;Oliver Brandt;Lutz Geelhaar

  • Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

    Valeria Bragaglia;Fabrizio Arciprete;Wei Zhang;Wei Zhang;Antonio Massimiliano Mio

  • The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements

    Nicolas Thillosen;Kathrin Sebald;Hilde Hardtdegen;Ralph Meijers

  • MBE growth optimization of InN nanowires

    T. Stoica;R. Meijers;R. Calarco;T. Richter

  • GaN-nanowhiskers: MBE-growth conditions and optical properties

    R. Meijers;T. Richter;R. Calarco;T. Stoica

  • Franz−Keldysh Effect in GaN Nanowires

    A. Cavallini;L. Polenta;M. Rossi;T. Stoica

  • Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires

    K. Jeganathan;R. K. Debnath;R. Meijers;T. Stoica

  • Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride

    Sara Varotto;Luca Nessi;Stefano Cecchi;Jagoda Sławińska;Jagoda Sławińska

  • Surface Reconstruction-Induced Coincidence Lattice Formation Between Two-Dimensionally Bonded Materials and a Three-Dimensionally Bonded Substrate

    Jos E. Boschker;Jamo Momand;Valeria Bragaglia;Ruining Wang

  • Flux quantization effects in InN nanowires.

    Thomas Richter;Christian Blömers;Hans Lüth;Raffaella Calarco

  • Growth of Ge Si(111) epitaxial layers: intermixing, strain relaxation and island formation

    N Motta;A Sgarlata;R Calarco;Q Nguyen

Frequent Co-Authors

Henning Riechert
Henning Riechert Infineon Technologies (Germany)
Hans Lüth
Hans Lüth Forschungszentrum Jülich
Oliver Brandt
Oliver Brandt Paul Drude Institute for Solid State Electronics
Bart J. Kooi
Bart J. Kooi University of Groningen
Eli Sutter
Eli Sutter University of Nebraska–Lincoln
Alexander V. Kolobov
Alexander V. Kolobov Herzen University
Paul Fons
Paul Fons Keio University
Matthias Wuttig
Matthias Wuttig RWTH Aachen University
Achim Trampert
Achim Trampert Paul Drude Institute for Solid State Electronics
Marcel A. Verheijen
Marcel A. Verheijen Eindhoven University of Technology

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