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Materials Science

D-Index
45
Citations
7494
World Ranking
11756
National Ranking
646

Overview

Raffaella Calarco is affiliated with the Leibniz Institute for Neurobiology in Germany. Their research primarily focuses on various aspects of materials science and engineering, with significant expertise in materials chemistry and electronic and electrical engineering. The scientist has contributed to advancing knowledge in phase-change materials and chalcogenides, including extensive work on chalcogenide semiconductor thin films.

The scientist's work spans several main research topics, including:

  • Phase-change materials and chalcogenides
  • Chalcogenide Semiconductor Thin Films
  • GaN-based semiconductor devices and materials
  • Quantum Dots Synthesis and Properties
  • 2D Materials and Applications
  • Advanced Thermoelectric Materials and Devices
  • Semiconductor Quantum Structures and Devices

Calarco has authored numerous publications, many appearing in well-regarded scientific venues. Frequent publication outlets include:

  • Nanomaterials
  • Physical Review Applied
  • arXiv (Cornell University)
  • Scientific Reports
  • Advanced Materials Interfaces

Recent papers illustrate the diversity and focus of Calarco's research:

  • "Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride" (2021), published in Nature Electronics
  • "Phonon anharmonicities and ultrafast dynamics in epitaxial Sb2Te3" (2020), published in Scientific Reports
  • "Carrier Diffusion in GaN: A Cathodoluminescence Study. III. Nature of Nonradiative Recombination at Threading Dislocations" (2022), published in Physical Review Applied
  • "Two-dimensional single crystal monoclinic gallium telluride on silicon substrate via transformation of epitaxial hexagonal phase" (2023), published in npj 2D Materials and Applications
  • "Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys" (2022), published in Nanomaterials

The scientist maintains collaborations with several frequent coauthors, including:

  • F. Arciprete
  • Eugenio Zallo
  • Stefano Cecchi
  • Massimo Longo
  • Caroline Chèze

Raffaella Calarco's subfields of study highlight their interdisciplinary approach, bridging physics and engineering disciplines:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Best Publications

  • Size-dependent Photoconductivity in MBE-Grown GaN -Nanowires

    Raffaella Calarco;Michel Marso;Thomas Richter;Ali I. Aykanat

  • Nucleation and Growth of GaN Nanowires on Si(111) Performed by Molecular Beam Epitaxy

    Raffaella Calarco;Ralph J. Meijers;Ratan K. Debnath;Toma Stoica

  • Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

    R. K. Debnath;R. Meijers;T. Richter;T. Stoica

  • Giant Rashba‐Type Spin Splitting in Ferroelectric GeTe(111)

    Marcus Liebmann;Christian Rinaldi;Domenico Di Sante;Jens Kellner

  • Interface and Wetting Layer Effect on the Catalyst‐Free Nucleation and Growth of GaN Nanowires

    Toma Stoica;Eli Sutter;Ralph J. Meijers;Ratan K. Debnath

  • Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires

    Toma Stoica;Ralph J. Meijers;Raffaella Calarco;Thomas Richter

  • Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb2Te3 superlattices

    Jamo Momand;Ruining Wang;Jos E. Boschker;Marcel A. Verheijen

  • Ferroelectric Control of the Spin Texture in GeTe

    Christian Rinaldi;Sara Varotto;Marco Asa;Jagoda Sławińska

  • Green luminescence in Mg-doped GaN

    Michael A. Reshchikov;Denis Demchenko;J. D. McNamara;S. Fernández-Garrido

  • Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer.

    T Schumann;T Gotschke;F Limbach;T Stoica

  • Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

    Sergio Fernández-Garrido;Xiang Kong;Tobias Gotschke;Raffaella Calarco

  • Surface-induced effects in GaN nanowires

    Raffaella Calarco;Toma Stoica;Oliver Brandt;Lutz Geelhaar

  • Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

    Valeria Bragaglia;Fabrizio Arciprete;Wei Zhang;Wei Zhang;Antonio Massimiliano Mio

  • The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements

    Nicolas Thillosen;Kathrin Sebald;Hilde Hardtdegen;Ralph Meijers

  • MBE growth optimization of InN nanowires

    T. Stoica;R. Meijers;R. Calarco;T. Richter

  • GaN-nanowhiskers: MBE-growth conditions and optical properties

    R. Meijers;T. Richter;R. Calarco;T. Stoica

  • Franz−Keldysh Effect in GaN Nanowires

    A. Cavallini;L. Polenta;M. Rossi;T. Stoica

  • Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires

    K. Jeganathan;R. K. Debnath;R. Meijers;T. Stoica

  • Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride

    Sara Varotto;Luca Nessi;Stefano Cecchi;Jagoda Sławińska;Jagoda Sławińska

  • Surface Reconstruction-Induced Coincidence Lattice Formation Between Two-Dimensionally Bonded Materials and a Three-Dimensionally Bonded Substrate

    Jos E. Boschker;Jamo Momand;Valeria Bragaglia;Ruining Wang

  • Flux quantization effects in InN nanowires.

    Thomas Richter;Christian Blömers;Hans Lüth;Raffaella Calarco

  • Growth of Ge Si(111) epitaxial layers: intermixing, strain relaxation and island formation

    N Motta;A Sgarlata;R Calarco;Q Nguyen

Frequent Co-Authors

Henning Riechert
Henning Riechert Infineon Technologies (Germany)
Hans Lüth
Hans Lüth Forschungszentrum Jülich
Oliver Brandt
Oliver Brandt Paul Drude Institute for Solid State Electronics
Bart J. Kooi
Bart J. Kooi University of Groningen
Eli Sutter
Eli Sutter University of Nebraska–Lincoln
Alexander V. Kolobov
Alexander V. Kolobov Herzen University
Paul Fons
Paul Fons Keio University
Matthias Wuttig
Matthias Wuttig RWTH Aachen University
Achim Trampert
Achim Trampert Paul Drude Institute for Solid State Electronics
Marcel A. Verheijen
Marcel A. Verheijen Eindhoven University of Technology

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