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Alexander V. Kolobov

Alexander V. Kolobov

D-Index & Metrics

Materials Science

D-Index
56
Citations
13369
World Ranking
8181
National Ranking
20

Overview

Alexander V. Kolobov is affiliated with Herzen University in the Russian Federation. The researcher's work predominantly spans the fields of Materials Science and Engineering, with a strong focus on Materials Chemistry and Electrical and Electronic Engineering as main subfields. Their research contributions cover topics including Phase-change materials and chalcogenides, Chalcogenide Semiconductor Thin Films, 2D Materials and Applications, Glass properties and applications, Quantum Dots Synthesis and Properties, Nonlinear Optical Materials Studies, and Solid-state spectroscopy and crystallography.

Kolobov has published several recent papers that reflect the thematic concentration of their research. Selected papers include:

  • Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS2: Implications for 2D Electronic Devices (2021), ACS Applied Nano Materials
  • High-quality sputter-grown layered chalcogenide films for phase change memory applications and beyond (2020), Journal of Physics D Applied Physics
  • Ultrafast dynamics of the low frequency shear phonon in 1T'-MoTe2 (2020), Applied Physics Letters
  • Recent developments concerning the sputter growth of chalcogenide-based layered phase-change materials (2021), Materials Science in Semiconductor Processing
  • Anomalous electrical conductivity change in MoS2 during the transition from the amorphous to crystalline phase (2022), Ceramics International

The researcher has frequently collaborated with coauthors including Paul Fons, Miloš Krbal, Yuta Saito, А. А. Кононов, and Н. И. Анисимова. These collaborations have contributed to a substantial body of knowledge in their research areas.

Alexander V. Kolobov's work has been published in a range of scientific venues, notably:

  • physica status solidi (RRL) - Rapid Research Letters
  • Applied Physics Letters
  • Crystal Growth & Design
  • physica status solidi (b)
  • Semiconductors

In addition to journal articles, Kolobov has contributed to book publications. Four titles were published by World Scientific under the collection "The World Scientific Reference of Amorphous Materials" in 2020.

Best Publications

  • Understanding the phase-change mechanism of rewritable optical media.

    Alexander V. Kolobov;Paul Fons;Anatoly I. Frenkel;Alexei L. Ankudinov

  • Interfacial phase-change memory

    R. E. Simpson;P. Fons;A. V. Kolobov;T. Fukaya

  • Photoinduced effects and metastability in amorphous semiconductors and insulators

    K. Shimakawa;A. Kolobov;S.R. Elliott

  • Two-Dimensional Transition-Metal Dichalcogenides

    Alexander V. Kolobov;Junji Tominaga

  • Photo-induced metastability in amorphous semiconductors

    Alexander V. Kolobov

  • Toward the Ultimate Limit of Phase Change in Ge2Sb2Te5

    R. E. Simpson;M. Krbal;P. Fons;A. V. Kolobov

  • Raman scattering study of the a-GeTe structure and possible mechanism for the amorphous to crystal transition

    K S Andrikopoulos;K S Andrikopoulos;S N Yannopoulos;G A Voyiatzis;A V Kolobov;A V Kolobov

  • On the origin of p-type conductivity in amorphous chalcogenides

    A.V. Kolobov

  • Photodoping of amorphous chalcogenides by metals

    Unknown

  • Structural study of amorphous selenium by in situ EXAFS: Observation of photoinduced bond alternation

    Alexander V. Kolobov;Hiroyuki Oyanagi;Kazunobu Tanaka;Keiji Tanaka

  • Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials

    K.S. Andrikopoulos;K.S. Andrikopoulos;S.N. Yannopoulos;A.V. Kolobov;A.V. Kolobov;P. Fons

  • Distortion-triggered loss of long-range order in solids with bonding energy hierarchy

    A.V. Kolobov;M. Krbal;P. Fons;J. Tominaga

  • Ferroelectric Order Control of the Dirac‐Semimetal Phase in GeTe‐Sb2Te3 Superlattices

    J. Tominaga;A. V. Kolobov;P. Fons;T. Nakano

  • Raman scattering from Ge nanostructures grown on Si substrates: Power and limitations

    A. V. Kolobov

  • Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO.

    Paul Fons;Hiroshi Tampo;Alexander V. Kolobov;Masataka Ohkubo

  • An in situ Raman study of polarization-dependent photocrystallization in amorphous selenium films

    Vladimir V. Poborchii;Alexander V. Kolobov;Kazunobu Tanaka

  • Local structure of crystallized GeTe films

    A. V. Kolobov;J. Tominaga;P. Fons;T. Uruga

  • Pressure-induced site-selective disordering of Ge2Sb2Te5: a new insight into phase-change optical recording.

    Alexander Kolobov;Alexander Kolobov;Julien Haines;Annie Pradel;Michel Ribes

  • Intrinsic complexity of the melt-quenched amorphous Ge 2 Sb 2 Te 5 memory alloy

    M. Krbal;A. V. Kolobov;P. Fons;J. Tominaga

  • Phase transition in crystalline GeTe: Pitfalls of averaging effects

    Paul Fons;Alexander V. Kolobov;Milos Krbal;Junji Tominaga

  • Photomelting of selenium at low temperature

    Vladimir V. Poborchii;Alexander V. Kolobov;Kazunobu Tanaka

Frequent Co-Authors

Junji Tominaga
Junji Tominaga National Institute of Advanced Industrial Science and Technology
Paul Fons
Paul Fons Keio University
Keisuke Kobayashi
Keisuke Kobayashi Japan Atomic Energy Agency
Raffaella Calarco
Raffaella Calarco Leibniz Institute for Neurobiology
Yuji Sutou
Yuji Sutou Tohoku University
Henning Riechert
Henning Riechert Infineon Technologies (Germany)
Shiqiang Wei
Shiqiang Wei University of Science and Technology of China
Stephen R. Elliott
Stephen R. Elliott University of Oxford
Keiji Ueno
Keiji Ueno Saitama University
Anatoly I. Frenkel
Anatoly I. Frenkel Stony Brook University

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