World's Best Scientists 2026 revealed!
Alexander V. Kolobov

Alexander V. Kolobov

D-Index & Metrics

Materials Science

D-Index
56
Citations
13369
World Ranking
8179
National Ranking
20

Alexander V. Kolobov publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Alexander V. Kolobov sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 362 publications — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Alexander V. Kolobov D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Alexander V. Kolobov sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 56 D-Index — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Alexander V. Kolobov is affiliated with Herzen University in the Russian Federation. The researcher's work predominantly spans the fields of Materials Science and Engineering, with a strong focus on Materials Chemistry and Electrical and Electronic Engineering as main subfields. Their research contributions cover topics including Phase-change materials and chalcogenides, Chalcogenide Semiconductor Thin Films, 2D Materials and Applications, Glass properties and applications, Quantum Dots Synthesis and Properties, Nonlinear Optical Materials Studies, and Solid-state spectroscopy and crystallography.

Kolobov has published several recent papers that reflect the thematic concentration of their research. Selected papers include:

  • Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS2: Implications for 2D Electronic Devices (2021), ACS Applied Nano Materials
  • High-quality sputter-grown layered chalcogenide films for phase change memory applications and beyond (2020), Journal of Physics D Applied Physics
  • Ultrafast dynamics of the low frequency shear phonon in 1T'-MoTe2 (2020), Applied Physics Letters
  • Recent developments concerning the sputter growth of chalcogenide-based layered phase-change materials (2021), Materials Science in Semiconductor Processing
  • Anomalous electrical conductivity change in MoS2 during the transition from the amorphous to crystalline phase (2022), Ceramics International

The researcher has frequently collaborated with coauthors including Paul Fons, Miloš Krbal, Yuta Saito, А. А. Кононов, and Н. И. Анисимова. These collaborations have contributed to a substantial body of knowledge in their research areas.

Alexander V. Kolobov's work has been published in a range of scientific venues, notably:

  • physica status solidi (RRL) - Rapid Research Letters
  • Applied Physics Letters
  • Crystal Growth & Design
  • physica status solidi (b)
  • Semiconductors

In addition to journal articles, Kolobov has contributed to book publications. Four titles were published by World Scientific under the collection "The World Scientific Reference of Amorphous Materials" in 2020.

Best Publications

  • Understanding the phase-change mechanism of rewritable optical media.

    Alexander V. Kolobov;Paul Fons;Anatoly I. Frenkel;Alexei L. Ankudinov

  • Interfacial phase-change memory

    R. E. Simpson;P. Fons;A. V. Kolobov;T. Fukaya

  • Photoinduced effects and metastability in amorphous semiconductors and insulators

    K. Shimakawa;A. Kolobov;S.R. Elliott

  • Two-Dimensional Transition-Metal Dichalcogenides

    Alexander V. Kolobov;Junji Tominaga

  • Photo-induced metastability in amorphous semiconductors

    Alexander V. Kolobov

  • Toward the Ultimate Limit of Phase Change in Ge2Sb2Te5

    R. E. Simpson;M. Krbal;P. Fons;A. V. Kolobov

  • Raman scattering study of the a-GeTe structure and possible mechanism for the amorphous to crystal transition

    K S Andrikopoulos;K S Andrikopoulos;S N Yannopoulos;G A Voyiatzis;A V Kolobov;A V Kolobov

  • On the origin of p-type conductivity in amorphous chalcogenides

    A.V. Kolobov

  • Photodoping of amorphous chalcogenides by metals

    Unknown

  • Structural study of amorphous selenium by in situ EXAFS: Observation of photoinduced bond alternation

    Alexander V. Kolobov;Hiroyuki Oyanagi;Kazunobu Tanaka;Keiji Tanaka

  • Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials

    K.S. Andrikopoulos;K.S. Andrikopoulos;S.N. Yannopoulos;A.V. Kolobov;A.V. Kolobov;P. Fons

  • Distortion-triggered loss of long-range order in solids with bonding energy hierarchy

    A.V. Kolobov;M. Krbal;P. Fons;J. Tominaga

  • Ferroelectric Order Control of the Dirac‐Semimetal Phase in GeTe‐Sb2Te3 Superlattices

    J. Tominaga;A. V. Kolobov;P. Fons;T. Nakano

  • Raman scattering from Ge nanostructures grown on Si substrates: Power and limitations

    A. V. Kolobov

  • Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO.

    Paul Fons;Hiroshi Tampo;Alexander V. Kolobov;Masataka Ohkubo

  • An in situ Raman study of polarization-dependent photocrystallization in amorphous selenium films

    Vladimir V. Poborchii;Alexander V. Kolobov;Kazunobu Tanaka

  • Local structure of crystallized GeTe films

    A. V. Kolobov;J. Tominaga;P. Fons;T. Uruga

  • Pressure-induced site-selective disordering of Ge2Sb2Te5: a new insight into phase-change optical recording.

    Alexander Kolobov;Alexander Kolobov;Julien Haines;Annie Pradel;Michel Ribes

  • Intrinsic complexity of the melt-quenched amorphous Ge 2 Sb 2 Te 5 memory alloy

    M. Krbal;A. V. Kolobov;P. Fons;J. Tominaga

  • Phase transition in crystalline GeTe: Pitfalls of averaging effects

    Paul Fons;Alexander V. Kolobov;Milos Krbal;Junji Tominaga

  • Photomelting of selenium at low temperature

    Vladimir V. Poborchii;Alexander V. Kolobov;Kazunobu Tanaka

Frequent Co-Authors

Junji Tominaga
Junji Tominaga National Institute of Advanced Industrial Science and Technology
Paul Fons
Paul Fons Keio University
Keisuke Kobayashi
Keisuke Kobayashi Japan Atomic Energy Agency
Raffaella Calarco
Raffaella Calarco Leibniz Institute for Neurobiology
Yuji Sutou
Yuji Sutou Tohoku University
Henning Riechert
Henning Riechert Infineon Technologies (Germany)
Shiqiang Wei
Shiqiang Wei University of Science and Technology of China
Stephen R. Elliott
Stephen R. Elliott University of Oxford
Keiji Ueno
Keiji Ueno Saitama University
Anatoly I. Frenkel
Anatoly I. Frenkel Stony Brook University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Alexander V. Kolobov

Trending Scientists

Recently Published Articles