Songlin Feng

Best Publications

• Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

  Feng Rao;Feng Rao;Keyuan Ding;Keyuan Ding;Yuxing Zhou;Yonghui Zheng

  593
  Citations

• One order of magnitude faster phase change at reduced power in Ti-Sb-Te

  Min Zhu;Mengjiao Xia;Feng Rao;Xianbin Li

  239
  Citations

• Quantum computing

  Shu-Shen Li;Gui-Lu Long;Feng-Shan Bai;Song-Lin Feng

  233
  Citations

• InAs/GaAs single-electron quantum dot qubit

  Shu-Shen Li;Jian-Bai Xia;Jin-Long Liu;Fu-Hua Yang

  202
  Citations

• Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application

  Xilin Zhou;Liangcai Wu;Zhitang Song;Feng Rao

  179
  Citations

• Ceria concentration effect on chemical mechanical polishing of optical glass

  Liangyong Wang;Kailiang Zhang;Zhitang Song;Songlin Feng

  172
  Citations

• Understanding phase-change behaviors of carbon-doped Ge₂Sb₂Te₅ for phase-change memory application

  Xilin Zhou;Mengjiao Xia;Feng Rao;Liangcai Wu

  162
  Citations

• Photonic band gaps and localization in the Thue–Morse structures

  Xunya Jiang;Yonggang Zhang;Songlin Feng;Kerwyn C. Huang;Kerwyn C. Huang

  109
  Citations

• Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film

  Bo Liu;Zhitang Song;Ting Zhang;Jilin Xia

  100
  Citations

• Direct observation of metastable face-centered cubic Sb2Te3 crystal

  Yonghui Zheng;Mengjiao Xia;Yan Cheng;Feng Rao

  100
  Citations

• Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory

  Bo Liu;Ting Zhang;Jilin Xia;Zhitang Song

  95
  Citations

• Uniform Ti-doped Sb2Te3 materials for high-speed phase change memory applications

  Min Zhu;Liangcai Wu;Feng Rao;Zhitang Song

  95
  Citations

• Multilevel Data Storage Characteristics of Phase Change Memory Cell with Doublelayer Chalcogenide Films (Ge2Sb2Te5 and Sb2Te3)

  Feng Rao;Zhitang Song;Min Zhong;Liangcai Wu

  95
  Citations

• Single-crystalline tin-doped indium oxide whiskers: Synthesis and characterization

  Q. Wan;Z. T. Song;S. L. Feng;T. H. Wang

  93
  Citations

• A high-quality SOI structure fabricated by low-temperature technology with B+/H+ co-implantation and plasma bonding

  Xiaobo Ma;Weili Liu;Chao Chen;Da Zhan

  92
  Citations

• Dual-SAM functionalization on integrated cantilevers for specific trace-explosive sensing and non-specific adsorption suppression

  Guomin Zuo;Xinxin Li;Zhixiang Zhang;Tiantian Yang

  90
  Citations

• Designing efficient accelerator of depthwise separable convolutional neural network on FPGA

  Unknown

  89
  Citations

• Characterization of anti-adhesive self-assembled monolayer for nanoimprint lithography

  Weimin Zhou;Jing Zhang;Yanbo Liu;Xiaoli Li

  83
  Citations

• Programming voltage reduction in phase change memory cells with tungsten trioxide bottom heating layer/electrode

  Feng Rao;Zhitang Song;Yuefeng Gong;Liangcai Wu

  83
  Citations

• Detection of trace organophosphorus vapor with a self-assembled bilayer functionalized SiO2 microcantilever piezoresistive sensor

  Guomin Zuo;Xinxin Li;Peng Li;Tiantian Yang

  83
  Citations

• Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material

  Bo Liu;Zhitang Song;Songlin Feng;Bomy Chen

  81
  Citations

• Advantages of SiSb phase-change material and its applications in phase-change memory

  Ting Zhang;Zhitang Song;Feng Wang;Bo Liu

  75
  Citations

• Performance improvement of Sb2Te3 phase change material by Al doping

  Cheng Peng;Cheng Peng;Liangcai Wu;Zhitang Song;Feng Rao

  74
  Citations

• Lower current operation of phase change memory cell with a thin TiO2 layer

  Cheng Xu;Zhitang Song;Bo Liu;Songlin Feng

  69
  Citations

• High thermal stability and low density variation of carbon-doped Ge2Sb2Te5 for phase-change memory application

  Wangyang Zhou;Liangcai Wu;Xilin Zhou;Feng Rao

  67
  Citations

• High speed chalcogenide random access memory based on Si2Sb2Te5

  Ting Zhang;Zhitang Song;Feng Rao;Gaoming Feng

  63
  Citations

• Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials

  Feng Rao;Zhitang Song;Yan Cheng;Mengjiao Xia

  62
  Citations

• Phase change memory cell using tungsten trioxide bottom heating layer

  Feng Rao;Zhitang Song;Yuefeng Gong;Liangcai Wu

  56
  Citations

• Investigation of phase change Si2Sb2Te5 material and its application in chalcogenide random access memory

  Ting Zhang;Zhitang Song;Bo Liu;Songlin Feng

  54
  Citations

• Direct observation of titanium-centered octahedra in titanium–antimony–tellurium phase-change material

  Feng Rao;Zhitang Song;Yan Cheng;Xiaosong Liu

  53
  Citations

• Study on the Cu-doped Ge2Sb2Te5 for low-power phase change memory

  Keyuan Ding;Kun Ren;Feng Rao;Zhitang Song

  50
  Citations