World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
44
Citations
6845
World Ranking
5860
National Ranking
1118

Songlin Feng publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Songlin Feng sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 283 publications — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Songlin Feng D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Songlin Feng sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 44 D-Index — 42nd percentile

42% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Best Publications

  • Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

    Feng Rao;Feng Rao;Keyuan Ding;Keyuan Ding;Yuxing Zhou;Yonghui Zheng

  • One order of magnitude faster phase change at reduced power in Ti-Sb-Te

    Min Zhu;Mengjiao Xia;Feng Rao;Xianbin Li

  • Quantum computing

    Shu-Shen Li;Gui-Lu Long;Feng-Shan Bai;Song-Lin Feng

  • InAs/GaAs single-electron quantum dot qubit

    Shu-Shen Li;Jian-Bai Xia;Jin-Long Liu;Fu-Hua Yang

  • Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application

    Xilin Zhou;Liangcai Wu;Zhitang Song;Feng Rao

  • Ceria concentration effect on chemical mechanical polishing of optical glass

    Liangyong Wang;Kailiang Zhang;Zhitang Song;Songlin Feng

  • Understanding phase-change behaviors of carbon-doped Ge₂Sb₂Te₅ for phase-change memory application

    Xilin Zhou;Mengjiao Xia;Feng Rao;Liangcai Wu

  • Photonic band gaps and localization in the Thue–Morse structures

    Xunya Jiang;Yonggang Zhang;Songlin Feng;Kerwyn C. Huang;Kerwyn C. Huang

  • Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film

    Bo Liu;Zhitang Song;Ting Zhang;Jilin Xia

  • Direct observation of metastable face-centered cubic Sb2Te3 crystal

    Yonghui Zheng;Mengjiao Xia;Yan Cheng;Feng Rao

  • Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory

    Bo Liu;Ting Zhang;Jilin Xia;Zhitang Song

  • Uniform Ti-doped Sb2Te3 materials for high-speed phase change memory applications

    Min Zhu;Liangcai Wu;Feng Rao;Zhitang Song

  • Multilevel Data Storage Characteristics of Phase Change Memory Cell with Doublelayer Chalcogenide Films (Ge2Sb2Te5 and Sb2Te3)

    Feng Rao;Zhitang Song;Min Zhong;Liangcai Wu

  • Single-crystalline tin-doped indium oxide whiskers: Synthesis and characterization

    Q. Wan;Z. T. Song;S. L. Feng;T. H. Wang

  • A high-quality SOI structure fabricated by low-temperature technology with B+/H+ co-implantation and plasma bonding

    Xiaobo Ma;Weili Liu;Chao Chen;Da Zhan

  • Dual-SAM functionalization on integrated cantilevers for specific trace-explosive sensing and non-specific adsorption suppression

    Guomin Zuo;Xinxin Li;Zhixiang Zhang;Tiantian Yang

  • Designing efficient accelerator of depthwise separable convolutional neural network on FPGA

    Unknown

  • Characterization of anti-adhesive self-assembled monolayer for nanoimprint lithography

    Weimin Zhou;Jing Zhang;Yanbo Liu;Xiaoli Li

  • Programming voltage reduction in phase change memory cells with tungsten trioxide bottom heating layer/electrode

    Feng Rao;Zhitang Song;Yuefeng Gong;Liangcai Wu

  • Detection of trace organophosphorus vapor with a self-assembled bilayer functionalized SiO2 microcantilever piezoresistive sensor

    Guomin Zuo;Xinxin Li;Peng Li;Tiantian Yang

  • Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material

    Bo Liu;Zhitang Song;Songlin Feng;Bomy Chen

  • Advantages of SiSb phase-change material and its applications in phase-change memory

    Ting Zhang;Zhitang Song;Feng Wang;Bo Liu

  • Performance improvement of Sb2Te3 phase change material by Al doping

    Cheng Peng;Cheng Peng;Liangcai Wu;Zhitang Song;Feng Rao

  • Lower current operation of phase change memory cell with a thin TiO2 layer

    Cheng Xu;Zhitang Song;Bo Liu;Songlin Feng

  • High thermal stability and low density variation of carbon-doped Ge2Sb2Te5 for phase-change memory application

    Wangyang Zhou;Liangcai Wu;Xilin Zhou;Feng Rao

  • High speed chalcogenide random access memory based on Si2Sb2Te5

    Ting Zhang;Zhitang Song;Feng Rao;Gaoming Feng

  • Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials

    Feng Rao;Zhitang Song;Yan Cheng;Mengjiao Xia

  • Phase change memory cell using tungsten trioxide bottom heating layer

    Feng Rao;Zhitang Song;Yuefeng Gong;Liangcai Wu

  • Investigation of phase change Si2Sb2Te5 material and its application in chalcogenide random access memory

    Ting Zhang;Zhitang Song;Bo Liu;Songlin Feng

  • Direct observation of titanium-centered octahedra in titanium–antimony–tellurium phase-change material

    Feng Rao;Zhitang Song;Yan Cheng;Xiaosong Liu

  • Study on the Cu-doped Ge2Sb2Te5 for low-power phase change memory

    Keyuan Ding;Kun Ren;Feng Rao;Zhitang Song

Frequent Co-Authors

Zhitang Song
Zhitang Song Chinese Academy of Sciences
Qing Wang
Qing Wang National University of Singapore
Feng Wang
Feng Wang Swinburne University of Technology
Tao Li
Tao Li Dongguan University of Technology
Rong Huang
Rong Huang East China Normal University
Hong-Bo Sun
Hong-Bo Sun Tsinghua University
Ze Zhang
Ze Zhang Zhejiang University
Xiaodong Han
Xiaodong Han Beijing University of Technology
Junhao Chu
Junhao Chu East China Normal University
Yong Wang
Yong Wang Nanjing Tech University

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