Feng Wu

Overview

Best Publications

• Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire

  M. D. Craven;S. H. Lim;F. Wu;J. S. Speck

  598
  Citations

• Ruthenium atomically dispersed in carbon outperforms platinum toward hydrogen evolution in alkaline media.

  Bingzhang Lu;Lin Guo;Lin Guo;Feng Wu;Yi Peng

  584
  Citations

• Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

  Hitoshi Sato;Roy B. Chung;Hirohiko Hirasawa;Natalie Fellows

  398
  Citations

• A GaN bulk crystal with improved structural quality grown by the ammonothermal method.

  Tadao Hashimoto;Feng Wu;James S. Speck;Shuji Nakamura

  390
  Citations

• Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

  B. A. Haskell;F. Wu;M. D. Craven;S. Matsuda

  356
  Citations

• Demonstration of a semipolar (101¯3¯) InGaN /GaN green light emitting diode

  R. Sharma;P. M. Pattison;H. Masui;R. M. Farrell

  349
  Citations

• High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region.

  Feng Wu;Qing Li;Peng Wang;Hui Xia

  316
  Citations

• Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

  R M Farrell;E C Young;F Wu;S P DenBaars

  312
  Citations

• Threading dislocation reduction via laterally overgrown nonpolar (112̄0)a-plane GaN

  M. D. Craven;S. H. Lim;F. Wu;J. S. Speck

  256
  Citations

• High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate

  Hong Zhong;Anurag Tyagi;Natalie N. Fellows;Feng Wu

  256
  Citations

• Carbon doping switching on the hydrogen adsorption activity of NiO for hydrogen evolution reaction

  Tianyi Kou;Mingpeng Chen;Feng Wu;Tyler J. Smart

  253
  Citations

• Improved electroluminescence on nonpolar m -plane InGaN/GaN quantum wells LEDs

  Kwang-Choong Kim;Mathew C. Schmidt;Hitoshi Sato;Feng Wu

  223
  Citations

• Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates

  Troy J. Baker;Benjamin A. Haskell;Feng Wu;James S. Speck

  221
  Citations

• Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition.

  Meng Peng;Meng Peng;Runzhang Xie;Zhen Wang;Peng Wang

  216
  Citations

• Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy

  B. A. Haskell;F. Wu;S. Matsuda;M. D. Craven

  211
  Citations

• Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates

  Anurag Tyagi;Feng Wu;Erin C. Young;Arpan Chakraborty

  203
  Citations

• Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy

  Alexey E. Romanov;Erin C. Young;Feng Wu;Anurag Tyagi

  190
  Citations

• β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy

  Stephen W. Kaun;Feng Wu;James S. Speck

  189
  Citations

• Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition

  S. Keller;N. A. Fichtenbaum;F. Wu;D. Brown

  187
  Citations

• Improved quality (112¯0)a-plane GaN with sidewall lateral epitaxial overgrowth

  Bilge M. Imer;Feng Wu;Steven P. DenBaars;James S. Speck

  186
  Citations

• Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition

  M. D. Craven;F. Wu;A. Chakraborty;B. Imer

  179
  Citations