H-Index & Metrics Top Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Materials Science H-index 57 Citations 10,293 155 World Ranking 3992 National Ranking 1143

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optics
  • Laser

His main research concerns Optoelectronics, Crystallography, Epitaxy, Dislocation and Transmission electron microscopy. Feng Wu has researched Optoelectronics in several fields, including Quantum well and Metalorganic vapour phase epitaxy. His research investigates the connection between Crystallography and topics such as Condensed matter physics that intersect with issues in Diffraction.

His biological study spans a wide range of topics, including Sapphire and Cathodoluminescence. His Dislocation study integrates concerns from other disciplines, such as Gallium nitride and Full width at half maximum. His study explores the link between Transmission electron microscopy and topics such as Analytical chemistry that cross with problems in Molecular beam epitaxy.

His most cited work include:

  • Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire (455 citations)
  • Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates (249 citations)
  • Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy (232 citations)

What are the main themes of his work throughout his whole career to date?

Feng Wu mainly focuses on Optoelectronics, Transmission electron microscopy, Molecular beam epitaxy, Dislocation and Epitaxy. Much of his study explores Optoelectronics relationship to Quantum well. The study incorporates disciplines such as Metalorganic vapour phase epitaxy, Crystallography, Cathodoluminescence, Condensed matter physics and Diffraction in addition to Transmission electron microscopy.

His Metalorganic vapour phase epitaxy course of study focuses on Substrate and Misorientation. His work carried out in the field of Molecular beam epitaxy brings together such families of science as Scanning transmission electron microscopy, Electron diffraction, Electron mobility and Analytical chemistry. His Epitaxy research is multidisciplinary, incorporating perspectives in Sapphire, Gallium nitride, Hydride and Stacking fault.

He most often published in these fields:

  • Optoelectronics (55.36%)
  • Transmission electron microscopy (30.36%)
  • Molecular beam epitaxy (27.38%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (55.36%)
  • Molecular beam epitaxy (27.38%)
  • Substrate (11.90%)

In recent papers he was focusing on the following fields of study:

Feng Wu mostly deals with Optoelectronics, Molecular beam epitaxy, Substrate, Analytical chemistry and Light-emitting diode. His work carried out in the field of Optoelectronics brings together such families of science as Quantum well, Layer and Optics. The Molecular beam epitaxy study combines topics in areas such as Scanning transmission electron microscopy, Heterojunction, Doping and Microstructure.

His study ties his expertise on Epitaxy together with the subject of Substrate. His research integrates issues of Atom probe, Transmission electron microscopy, Indium and Diffraction in his study of Analytical chemistry. His Transmission electron microscopy research integrates issues from Composite material and Dislocation.

Between 2014 and 2021, his most popular works were:

  • β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy (88 citations)
  • Hybrid tunnel junction contacts to III–nitride light-emitting diodes (81 citations)
  • Composition determination of β-(AlxGa1−x)2O3layers coherently grown on (010) β-Ga2O3substrates by high-resolution X-ray diffraction (64 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Laser
  • Optics

His primary areas of investigation include Molecular beam epitaxy, Optoelectronics, Heterojunction, Substrate and Analytical chemistry. While the research belongs to areas of Molecular beam epitaxy, he spends his time largely on the problem of Transmission electron microscopy, intersecting his research to questions surrounding Layer. His Optoelectronics study combines topics from a wide range of disciplines, such as Quantum well and Dislocation.

His Heterojunction research focuses on Crystallography and how it relates to X-ray crystallography and Epitaxy. His Substrate research includes themes of Etching, Etching rate, Diffraction and Surface roughness. His Diode research also works with subjects such as

  • Optics which connect with Nitride,
  • Quantum efficiency, which have a strong connection to Luminous efficacy and Chemical vapor deposition.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Top Publications

Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire

M. D. Craven;S. H. Lim;F. Wu;J. S. Speck.
Applied Physics Letters (2002)

589 Citations

Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

Hitoshi Sato;Roy B. Chung;Hirohiko Hirasawa;Natalie Fellows.
Applied Physics Letters (2008)

359 Citations

Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

B. A. Haskell;F. Wu;M. D. Craven;S. Matsuda.
Applied Physics Letters (2003)

345 Citations

Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode

R. Sharma;P. M. Pattison;H. Masui;R. M. Farrell.
Applied Physics Letters (2005)

338 Citations

A GaN bulk crystal with improved structural quality grown by the ammonothermal method.

Tadao Hashimoto;Feng Wu;James S. Speck;Shuji Nakamura.
Nature Materials (2007)

336 Citations

Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates

Troy J. Baker;Benjamin A. Haskell;Feng Wu;James S. Speck.
Japanese Journal of Applied Physics (2005)

319 Citations

Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

R M Farrell;E C Young;F Wu;S P DenBaars.
Semiconductor Science and Technology (2012)

279 Citations

High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate

Hong Zhong;Anurag Tyagi;Natalie N. Fellows;Feng Wu.
Applied Physics Letters (2007)

248 Citations

Threading dislocation reduction via laterally overgrown nonpolar (112̄0)a-plane GaN

M. D. Craven;S. H. Lim;F. Wu;J. S. Speck.
Applied Physics Letters (2002)

248 Citations

Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy

B. A. Haskell;F. Wu;S. Matsuda;M. D. Craven.
Applied Physics Letters (2003)

216 Citations

Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking h-index is inferred from publications deemed to belong to the considered discipline.

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