Wide-bandgap semiconductor, Epitaxy, Optoelectronics, Crystallography and Dislocation are his primary areas of study. His Wide-bandgap semiconductor study combines topics from a wide range of disciplines, such as Polarization, Electrostatics and Photoluminescence. His study looks at the intersection of Epitaxy and topics like Transmission electron microscopy with Wafer and Microstructure.
His work on Diode as part of general Optoelectronics research is frequently linked to Al content, thereby connecting diverse disciplines of science. The various areas that Paul T. Fini examines in his Crystallography study include Metalorganic vapour phase epitaxy, Gallium nitride and Nitride. His Dislocation research includes themes of Sapphire, Orders of magnitude, Threading dislocations and Junction diodes.
Paul T. Fini mainly investigates Epitaxy, Optoelectronics, Sapphire, Chemical vapor deposition and Metalorganic vapour phase epitaxy. His biological study spans a wide range of topics, including Gallium nitride, Transmission electron microscopy, Cathodoluminescence and Dislocation. His studies deal with areas such as Thin film and Diffraction as well as Sapphire.
His studies in Chemical vapor deposition integrate themes in fields like Deposition, Scattering, Photoluminescence, Analytical chemistry and Substrate. His Analytical chemistry research is multidisciplinary, incorporating elements of Molecular beam epitaxy and Doping. His Metalorganic vapour phase epitaxy research incorporates themes from Silicon, Tilt and Scanning electron microscope.
His main research concerns Epitaxy, Optoelectronics, Planar, Vapor phase and Hydride. His Epitaxy research is multidisciplinary, relying on both Transmission electron microscopy and Dislocation. His research in Transmission electron microscopy intersects with topics in Molecular physics, Semiconductor and Partial dislocations.
His Molecular physics research is multidisciplinary, incorporating perspectives in Scattering, Crystallography, Scanning transmission electron microscopy, Sapphire and Wide-bandgap semiconductor. His study in Gallium nitride extends to Dislocation with its themes. Paul T. Fini undertakes interdisciplinary study in the fields of Optoelectronics and Quantum yield through his research.
His primary areas of study are Gallium nitride, Non polar, Epitaxy, Dislocation and Composite material.
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Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
J. P. Ibbetson;P. T. Fini;K. D. Ness;S. P. DenBaars.
Applied Physics Letters (2000)
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.
Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell.
Nature Materials (2006)
POLARIZATION-INDUCED CHARGE AND ELECTRON MOBILITY IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
I. P. Smorchkova;C. R. Elsass;J. P. Ibbetson;R. Vetury.
Journal of Applied Physics (1999)
Electrical characterization of GaN p-n junctions with and without threading dislocations
P. Kozodoy;J. P. Ibbetson;H. Marchand;P. T. Fini.
Applied Physics Letters (1998)
Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
E. J. Tarsa;B. Heying;X. H. Wu;P. Fini.
Journal of Applied Physics (1997)
Dislocation mediated surface morphology of GaN
B. Heying;E. J. Tarsa;C. R. Elsass;P. Fini.
Journal of Applied Physics (1999)
Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
H. Marchand;X. H. Wu;J. P. Ibbetson;P. T. Fini.
Applied Physics Letters (1998)
High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN
G. Parish;S. Keller;P. Kozodoy;J. P. Ibbetson.
Applied Physics Letters (1999)
Dislocation generation in GaN heteroepitaxy
X.H Wu;P Fini;E.J Tarsa;B Heying.
Journal of Crystal Growth (1998)
Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
B. A. Haskell;F. Wu;M. D. Craven;S. Matsuda.
Applied Physics Letters (2003)
Profile was last updated on December 6th, 2021.
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