Paul T. Fini

What is he best known for?

The fields of study he is best known for:

• Semiconductor
• Light-emitting diode
• Composite material

Wide-bandgap semiconductor, Epitaxy, Optoelectronics, Crystallography and Dislocation are his primary areas of study. His Wide-bandgap semiconductor study combines topics from a wide range of disciplines, such as Polarization, Electrostatics and Photoluminescence. His study looks at the intersection of Epitaxy and topics like Transmission electron microscopy with Wafer and Microstructure.

His work on Diode as part of general Optoelectronics research is frequently linked to Al content, thereby connecting diverse disciplines of science. The various areas that Paul T. Fini examines in his Crystallography study include Metalorganic vapour phase epitaxy, Gallium nitride and Nitride. His Dislocation research includes themes of Sapphire, Orders of magnitude, Threading dislocations and Junction diodes.

His most cited work include:

• Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors (762 citations)
• Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. (542 citations)
• Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy (345 citations)

What are the main themes of his work throughout his whole career to date?

Paul T. Fini mainly investigates Epitaxy, Optoelectronics, Sapphire, Chemical vapor deposition and Metalorganic vapour phase epitaxy. His biological study spans a wide range of topics, including Gallium nitride, Transmission electron microscopy, Cathodoluminescence and Dislocation. His studies deal with areas such as Thin film and Diffraction as well as Sapphire.

His studies in Chemical vapor deposition integrate themes in fields like Deposition, Scattering, Photoluminescence, Analytical chemistry and Substrate. His Analytical chemistry research is multidisciplinary, incorporating elements of Molecular beam epitaxy and Doping. His Metalorganic vapour phase epitaxy research incorporates themes from Silicon, Tilt and Scanning electron microscope.

He most often published in these fields:

• Epitaxy (49.55%)
• Optoelectronics (44.14%)
• Sapphire (28.83%)

What were the highlights of his more recent work (between 2006-2016)?

• Epitaxy (49.55%)
• Optoelectronics (44.14%)
• Planar (5.41%)

In recent papers he was focusing on the following fields of study:

His main research concerns Epitaxy, Optoelectronics, Planar, Vapor phase and Hydride. His Epitaxy research is multidisciplinary, relying on both Transmission electron microscopy and Dislocation. His research in Transmission electron microscopy intersects with topics in Molecular physics, Semiconductor and Partial dislocations.

His Molecular physics research is multidisciplinary, incorporating perspectives in Scattering, Crystallography, Scanning transmission electron microscopy, Sapphire and Wide-bandgap semiconductor. His study in Gallium nitride extends to Dislocation with its themes. Paul T. Fini undertakes interdisciplinary study in the fields of Optoelectronics and Quantum yield through his research.

Between 2006 and 2016, his most popular works were:

• Development of the IES method for evaluating the color rendition of light sources. (133 citations)
• Anisotropic strain and phonon deformation potentials in GaN (86 citations)
• Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques (24 citations)

In his most recent research, the most cited papers focused on:

• Semiconductor
• Light-emitting diode
• Composite material

His primary areas of study are Gallium nitride, Non polar, Epitaxy, Dislocation and Composite material.