H-Index & Metrics Top Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Materials Science H-index 44 Citations 10,194 88 World Ranking 7238 National Ranking 1947

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Light-emitting diode
  • Composite material

Wide-bandgap semiconductor, Epitaxy, Optoelectronics, Crystallography and Dislocation are his primary areas of study. His Wide-bandgap semiconductor study combines topics from a wide range of disciplines, such as Polarization, Electrostatics and Photoluminescence. His study looks at the intersection of Epitaxy and topics like Transmission electron microscopy with Wafer and Microstructure.

His work on Diode as part of general Optoelectronics research is frequently linked to Al content, thereby connecting diverse disciplines of science. The various areas that Paul T. Fini examines in his Crystallography study include Metalorganic vapour phase epitaxy, Gallium nitride and Nitride. His Dislocation research includes themes of Sapphire, Orders of magnitude, Threading dislocations and Junction diodes.

His most cited work include:

  • Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors (762 citations)
  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. (542 citations)
  • Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy (345 citations)

What are the main themes of his work throughout his whole career to date?

Paul T. Fini mainly investigates Epitaxy, Optoelectronics, Sapphire, Chemical vapor deposition and Metalorganic vapour phase epitaxy. His biological study spans a wide range of topics, including Gallium nitride, Transmission electron microscopy, Cathodoluminescence and Dislocation. His studies deal with areas such as Thin film and Diffraction as well as Sapphire.

His studies in Chemical vapor deposition integrate themes in fields like Deposition, Scattering, Photoluminescence, Analytical chemistry and Substrate. His Analytical chemistry research is multidisciplinary, incorporating elements of Molecular beam epitaxy and Doping. His Metalorganic vapour phase epitaxy research incorporates themes from Silicon, Tilt and Scanning electron microscope.

He most often published in these fields:

  • Epitaxy (49.55%)
  • Optoelectronics (44.14%)
  • Sapphire (28.83%)

What were the highlights of his more recent work (between 2006-2016)?

  • Epitaxy (49.55%)
  • Optoelectronics (44.14%)
  • Planar (5.41%)

In recent papers he was focusing on the following fields of study:

His main research concerns Epitaxy, Optoelectronics, Planar, Vapor phase and Hydride. His Epitaxy research is multidisciplinary, relying on both Transmission electron microscopy and Dislocation. His research in Transmission electron microscopy intersects with topics in Molecular physics, Semiconductor and Partial dislocations.

His Molecular physics research is multidisciplinary, incorporating perspectives in Scattering, Crystallography, Scanning transmission electron microscopy, Sapphire and Wide-bandgap semiconductor. His study in Gallium nitride extends to Dislocation with its themes. Paul T. Fini undertakes interdisciplinary study in the fields of Optoelectronics and Quantum yield through his research.

Between 2006 and 2016, his most popular works were:

  • Development of the IES method for evaluating the color rendition of light sources. (133 citations)
  • Anisotropic strain and phonon deformation potentials in GaN (86 citations)
  • Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques (24 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Light-emitting diode
  • Composite material

His primary areas of study are Gallium nitride, Non polar, Epitaxy, Dislocation and Composite material.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Top Publications

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

J. P. Ibbetson;P. T. Fini;K. D. Ness;S. P. DenBaars.
Applied Physics Letters (2000)

1059 Citations

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell.
Nature Materials (2006)

717 Citations

POLARIZATION-INDUCED CHARGE AND ELECTRON MOBILITY IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY

I. P. Smorchkova;C. R. Elsass;J. P. Ibbetson;R. Vetury.
Journal of Applied Physics (1999)

511 Citations

Electrical characterization of GaN p-n junctions with and without threading dislocations

P. Kozodoy;J. P. Ibbetson;H. Marchand;P. T. Fini.
Applied Physics Letters (1998)

489 Citations

Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

E. J. Tarsa;B. Heying;X. H. Wu;P. Fini.
Journal of Applied Physics (1997)

478 Citations

Dislocation mediated surface morphology of GaN

B. Heying;E. J. Tarsa;C. R. Elsass;P. Fini.
Journal of Applied Physics (1999)

423 Citations

Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition

H. Marchand;X. H. Wu;J. P. Ibbetson;P. T. Fini.
Applied Physics Letters (1998)

403 Citations

High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN

G. Parish;S. Keller;P. Kozodoy;J. P. Ibbetson.
Applied Physics Letters (1999)

386 Citations

Dislocation generation in GaN heteroepitaxy

X.H Wu;P Fini;E.J Tarsa;B Heying.
Journal of Crystal Growth (1998)

367 Citations

Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

B. A. Haskell;F. Wu;M. D. Craven;S. Matsuda.
Applied Physics Letters (2003)

345 Citations

Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking h-index is inferred from publications deemed to belong to the considered discipline.

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