The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Paul T. Fini sits on this spectrum.
This scientist: 119 publications — 6th percentile
6% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Paul T. Fini sits on this spectrum.
This scientist: 50 D-Index — 22nd percentile
22% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Wide-bandgap semiconductor, Epitaxy, Optoelectronics, Crystallography and Dislocation are his primary areas of study. His Wide-bandgap semiconductor study combines topics from a wide range of disciplines, such as Polarization, Electrostatics and Photoluminescence. His study looks at the intersection of Epitaxy and topics like Transmission electron microscopy with Wafer and Microstructure.
His work on Diode as part of general Optoelectronics research is frequently linked to Al content, thereby connecting diverse disciplines of science. The various areas that Paul T. Fini examines in his Crystallography study include Metalorganic vapour phase epitaxy, Gallium nitride and Nitride. His Dislocation research includes themes of Sapphire, Orders of magnitude, Threading dislocations and Junction diodes.
Paul T. Fini mainly investigates Epitaxy, Optoelectronics, Sapphire, Chemical vapor deposition and Metalorganic vapour phase epitaxy. His biological study spans a wide range of topics, including Gallium nitride, Transmission electron microscopy, Cathodoluminescence and Dislocation. His studies deal with areas such as Thin film and Diffraction as well as Sapphire.
His studies in Chemical vapor deposition integrate themes in fields like Deposition, Scattering, Photoluminescence, Analytical chemistry and Substrate. His Analytical chemistry research is multidisciplinary, incorporating elements of Molecular beam epitaxy and Doping. His Metalorganic vapour phase epitaxy research incorporates themes from Silicon, Tilt and Scanning electron microscope.
His main research concerns Epitaxy, Optoelectronics, Planar, Vapor phase and Hydride. His Epitaxy research is multidisciplinary, relying on both Transmission electron microscopy and Dislocation. His research in Transmission electron microscopy intersects with topics in Molecular physics, Semiconductor and Partial dislocations.
His Molecular physics research is multidisciplinary, incorporating perspectives in Scattering, Crystallography, Scanning transmission electron microscopy, Sapphire and Wide-bandgap semiconductor. His study in Gallium nitride extends to Dislocation with its themes. Paul T. Fini undertakes interdisciplinary study in the fields of Optoelectronics and Quantum yield through his research.
His primary areas of study are Gallium nitride, Non polar, Epitaxy, Dislocation and Composite material.
J. P. Ibbetson;P. T. Fini;K. D. Ness;S. P. DenBaars
Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell
I. P. Smorchkova;C. R. Elsass;J. P. Ibbetson;R. Vetury
E. J. Tarsa;B. Heying;X. H. Wu;P. Fini
B. Heying;E. J. Tarsa;C. R. Elsass;P. Fini
G. Parish;S. Keller;P. Kozodoy;J. P. Ibbetson
B. A. Haskell;F. Wu;M. D. Craven;S. Matsuda
P. Kozodoy;J. P. Ibbetson;H. Marchand;P. T. Fini
Y.-F. Wu;B.P. Keller;P. Fini;S. Keller
H. Marchand;X. H. Wu;J. P. Ibbetson;P. T. Fini
X.H Wu;P Fini;E.J Tarsa;B Heying
Troy J. Baker;Benjamin A. Haskell;Paul T. Fini;Steven P. Denbaars
B. Heying;I. Smorchkova;C. Poblenz;C. Elsass
Troy J. Baker;Benjamin A. Haskell;Feng Wu;James S. Speck
B. A. Haskell;F. Wu;S. Matsuda;M. D. Craven
S. Keller;G. Parish;P. T. Fini;S. Heikman
Haskell Benjamin A;Fini Paul T;Matsuda Narimasa;Craven Michael D
S. F. Chichibu;S. F. Chichibu;H. Marchand;M. S. Minsky;S. Keller
Benjamin A. Haskell;Arpan Chakraborty;Feng Wu;Hideo Sasano
Amy Hanlon;P. Morgan Pattison;John F. Kaeding;Rajat Sharma
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