D-Index & Metrics Best Publications
Materials Science
Japan
2023

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Physics D-index 90 Citations 35,436 826 World Ranking 1590 National Ranking 42
Materials Science D-index 89 Citations 36,624 967 World Ranking 894 National Ranking 35

Research.com Recognitions

Awards & Achievements

2023 - Research.com Materials Science in Japan Leader Award

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optics
  • Optoelectronics

His main research concerns Optoelectronics, Epitaxy, Photoluminescence, Light-emitting diode and Sapphire. His Optoelectronics research incorporates themes from Layer, Nitride and Optics. His Optics research integrates issues from Diode and Dislocation.

Isamu Akasaki has researched Epitaxy in several fields, including Crystallography, Cathodoluminescence and Analytical chemistry. The concepts of his Photoluminescence study are interwoven with issues in Piezoelectricity and Band gap. As a part of the same scientific family, Isamu Akasaki mostly works in the field of Sapphire, focusing on Exciton and, on occasion, Stokes shift, Optical storage and Radiative transfer.

His most cited work include:

  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. (542 citations)
  • Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect (519 citations)
  • P-TYPE CONDUCTION IN MG-DOPED GAN AND AL0.08GA0.92N GROWN BY METALORGANIC VAPOR PHASE EPITAXY (225 citations)

What are the main themes of his work throughout his whole career to date?

Isamu Akasaki mostly deals with Optoelectronics, Epitaxy, Light-emitting diode, Metalorganic vapour phase epitaxy and Photoluminescence. His Optoelectronics study focuses on Diode in particular. His Diode study combines topics from a wide range of disciplines, such as Laser and Quantum efficiency.

His Epitaxy research focuses on subjects like Analytical chemistry, which are linked to Annealing. He has included themes like Wavelength, Gallium nitride and Ultraviolet in his Light-emitting diode study. His research investigates the connection with Photoluminescence and areas like Doping which intersect with concerns in Acceptor.

He most often published in these fields:

  • Optoelectronics (62.59%)
  • Epitaxy (20.19%)
  • Light-emitting diode (17.41%)

What were the highlights of his more recent work (between 2017-2021)?

  • Optoelectronics (62.59%)
  • Semiconductor (8.70%)
  • Nanowire (4.63%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Optoelectronics, Semiconductor, Nanowire, Shell and Quantum. His Optoelectronics study combines topics in areas such as Layer, Metalorganic vapour phase epitaxy and Laser. His Laser study integrates concerns from other disciplines, such as Quality, Ultraviolet and Nitride.

His Semiconductor research is multidisciplinary, incorporating elements of Characterization, Laser diode and Doping. His Nanowire research incorporates themes from Crystal growth and Wavelength. The concepts of his Shell study are interwoven with issues in Crystal and Tunnel junction.

Between 2017 and 2021, his most popular works were:

  • Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer Layer (8 citations)
  • Tuning the Resonant Frequency of a Surface Plasmon by Double-Metallic Ag/Au Nanoparticles for High-Efficiency Green Light-Emitting Diodes (6 citations)
  • Modified Shockley Equation for GaInN-Based Light-Emitting Diodes: Origin of the Power- Efficiency Degradation Under High Current Injection (5 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Photon
  • Optics

Isamu Akasaki spends much of his time researching Optoelectronics, Diode, Semiconductor, Light-emitting diode and Nanowire. His Optoelectronics research incorporates elements of Layer, Shell and Laser. His Diode study incorporates themes from Green-light and Surface plasmon.

His Semiconductor research includes themes of Characterization, Green led, Plasmon and Reflectivity. His studies deal with areas such as Chain structure, Amorphous solid, Quantum well, Fluorine and Quantum efficiency as well as Light-emitting diode. The Nanowire study combines topics in areas such as Triethylgallium, Chemical vapor deposition, Electroluminescence and Cathodoluminescence.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell.
Nature Materials (2006)

793 Citations

Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

Tetsuya Takeuchi;Christian Wetzel;Shigeo Yamaguchi;Hiromitsu Sakai.
Applied Physics Letters (1998)

792 Citations

P-TYPE CONDUCTION IN MG-DOPED GAN AND AL0.08GA0.92N GROWN BY METALORGANIC VAPOR PHASE EPITAXY

T. Tanaka;A. Watanabe;H. Amano;Y. Kobayashi.
Applied Physics Letters (1994)

379 Citations

Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

T. Detchprohm;K. Hiramatsu;H. Amano;I. Akasaki.
Applied Physics Letters (1992)

347 Citations

Improved Efficiency of 255?280 nm AlGaN-Based Light-Emitting Diodes

Cyril Pernot;Myunghee Kim;Shinya Fukahori;Tetsuhiko Inazu.
Applied Physics Express (2010)

298 Citations

Energy band‐gap bowing parameter in an AlxGa1−x N alloy

Y. Koide;H. Itoh;M. R. H. Khan;K. Hiramatu.
Journal of Applied Physics (1987)

293 Citations

Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy

Kazumasa Hiramatsu;Theeradetch Detchprohm;Isamu Akasaki.
Japanese Journal of Applied Physics (1993)

291 Citations

Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels

B Arnaudov;Tanja Paskova;Plamen Paskov;Björn Magnusson.
Physical Review B (2004)

236 Citations

Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy

C. Wetzel;T. Takeuchi;S. Yamaguchi;H. Katoh.
Applied Physics Letters (1998)

236 Citations

Light-emitting semiconductor device

Kamiyama Satoshi;Amano Hiroshi;Akasaki Isamu;Iwaya Motoaki.
(2008)

180 Citations

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