2023 - Research.com Materials Science in Japan Leader Award
His main research concerns Optoelectronics, Epitaxy, Photoluminescence, Light-emitting diode and Sapphire. His Optoelectronics research incorporates themes from Layer, Nitride and Optics. His Optics research integrates issues from Diode and Dislocation.
Isamu Akasaki has researched Epitaxy in several fields, including Crystallography, Cathodoluminescence and Analytical chemistry. The concepts of his Photoluminescence study are interwoven with issues in Piezoelectricity and Band gap. As a part of the same scientific family, Isamu Akasaki mostly works in the field of Sapphire, focusing on Exciton and, on occasion, Stokes shift, Optical storage and Radiative transfer.
Isamu Akasaki mostly deals with Optoelectronics, Epitaxy, Light-emitting diode, Metalorganic vapour phase epitaxy and Photoluminescence. His Optoelectronics study focuses on Diode in particular. His Diode study combines topics from a wide range of disciplines, such as Laser and Quantum efficiency.
His Epitaxy research focuses on subjects like Analytical chemistry, which are linked to Annealing. He has included themes like Wavelength, Gallium nitride and Ultraviolet in his Light-emitting diode study. His research investigates the connection with Photoluminescence and areas like Doping which intersect with concerns in Acceptor.
The scientist’s investigation covers issues in Optoelectronics, Semiconductor, Nanowire, Shell and Quantum. His Optoelectronics study combines topics in areas such as Layer, Metalorganic vapour phase epitaxy and Laser. His Laser study integrates concerns from other disciplines, such as Quality, Ultraviolet and Nitride.
His Semiconductor research is multidisciplinary, incorporating elements of Characterization, Laser diode and Doping. His Nanowire research incorporates themes from Crystal growth and Wavelength. The concepts of his Shell study are interwoven with issues in Crystal and Tunnel junction.
Isamu Akasaki spends much of his time researching Optoelectronics, Diode, Semiconductor, Light-emitting diode and Nanowire. His Optoelectronics research incorporates elements of Layer, Shell and Laser. His Diode study incorporates themes from Green-light and Surface plasmon.
His Semiconductor research includes themes of Characterization, Green led, Plasmon and Reflectivity. His studies deal with areas such as Chain structure, Amorphous solid, Quantum well, Fluorine and Quantum efficiency as well as Light-emitting diode. The Nanowire study combines topics in areas such as Triethylgallium, Chemical vapor deposition, Electroluminescence and Cathodoluminescence.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.
Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell.
Nature Materials (2006)
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
Tetsuya Takeuchi;Christian Wetzel;Shigeo Yamaguchi;Hiromitsu Sakai.
Applied Physics Letters (1998)
P-TYPE CONDUCTION IN MG-DOPED GAN AND AL0.08GA0.92N GROWN BY METALORGANIC VAPOR PHASE EPITAXY
T. Tanaka;A. Watanabe;H. Amano;Y. Kobayashi.
Applied Physics Letters (1994)
Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
T. Detchprohm;K. Hiramatsu;H. Amano;I. Akasaki.
Applied Physics Letters (1992)
Improved Efficiency of 255?280 nm AlGaN-Based Light-Emitting Diodes
Cyril Pernot;Myunghee Kim;Shinya Fukahori;Tetsuhiko Inazu.
Applied Physics Express (2010)
Energy band‐gap bowing parameter in an AlxGa1−x N alloy
Y. Koide;H. Itoh;M. R. H. Khan;K. Hiramatu.
Journal of Applied Physics (1987)
Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy
Kazumasa Hiramatsu;Theeradetch Detchprohm;Isamu Akasaki.
Japanese Journal of Applied Physics (1993)
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
B Arnaudov;Tanja Paskova;Plamen Paskov;Björn Magnusson.
Physical Review B (2004)
Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy
C. Wetzel;T. Takeuchi;S. Yamaguchi;H. Katoh.
Applied Physics Letters (1998)
Light-emitting semiconductor device
Kamiyama Satoshi;Amano Hiroshi;Akasaki Isamu;Iwaya Motoaki.
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