isamu akasaki

Research.com Recognitions

• 2022 - Research.com Materials Science in Japan Leader Award

Overview

Best Publications

• Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

  H. Amano;N. Sawaki;I. Akasaki;Y. Toyoda

  3354
  Citations

• P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

  Hiroshi Amano;Masahiro Kito;Kazumasa Hiramatsu;Isamu Akasaki

  3010
  Citations

• Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

  Tetsuya Takeuchi;Shigetoshi Sota;Maki Katsuragawa;Miho Komori

  1577
  Citations

• Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

  Isamu Akasaki;Hiroshi Amano;Yasuo Koide;Kazumasa Hiramatsu

  1149
  Citations

• Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

  Isamu Akasaki;Hiroshi Amano

  853
  Citations

• Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

  Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell

  850
  Citations

• Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

  Tetsuya Takeuchi;Christian Wetzel;Shigeo Yamaguchi;Hiromitsu Sakai

  826
  Citations

• Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

  Tetsuya Takeuchi;Hiroshi Amano;Isamu Akasaki

  663
  Citations

• Shortest wavelength semiconductor laser diode

  I. Akasaki;S. Sota;H. Sakai;T. Tanaka

  595
  Citations

• Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

  K. Hiramatsu;S. Itoh;H. Amano;I. Akasaki

  472
  Citations

• Optical Properties of Strained AlGaN and GaInN on GaN

  Tetsuya Takeuchi;Hideo Takeuchi;Shigetoshi Sota;Hiromitsu Sakai

  420
  Citations

• Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

  Hiroshi Amano;Isamu Akasaki;Kazumasa Hiramatsu;Norikatsu Koide

  417
  Citations

• Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED

  Isamu Akasaki;Hiroshi Amano;Masahiro Kito;Kazumasa Hiramatsu

  415
  Citations

• P-TYPE CONDUCTION IN MG-DOPED GAN AND AL0.08GA0.92N GROWN BY METALORGANIC VAPOR PHASE EPITAXY

  T. Tanaka;A. Watanabe;H. Amano;Y. Kobayashi

  389
  Citations

• The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

  A. Watanabe;T. Takeuchi;K. Hirosawa;H. Amano

  384
  Citations

• Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain

  Theeradetch Detchprohm;Kazumasa Hiramatsu;Kenji Itoh;Isamu Akasaki

  379
  Citations

• Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

  T. Detchprohm;K. Hiramatsu;H. Amano;I. Akasaki

  353
  Citations

• Pit formation in GaInN quantum wells

  Y. Chen;T. Takeuchi;H. Amano;I. Akasaki

  340
  Citations

• Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

  Kazuhito Ban;Jun-ichi Yamamoto;Kenichiro Takeda;Kimiyasu Ide

  334
  Citations

• Improved Efficiency of 255?280 nm AlGaN-Based Light-Emitting Diodes

  Cyril Pernot;Myunghee Kim;Shinya Fukahori;Tetsuhiko Inazu

  324
  Citations