World's Best Scientists 2026 revealed!
isamu akasaki

isamu akasaki

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Materials Science
Japan
2022

D-Index & Metrics

Materials Science

D-Index
94
Citations
41471
World Ranking
1365
National Ranking
46

Physics

D-Index
94
Citations
41400
World Ranking
1966
National Ranking
53

isamu akasaki publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where isamu akasaki sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 1,032 publications — 99th percentile

99% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

isamu akasaki D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where isamu akasaki sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 94 D-Index — 89th percentile

89% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2022 - Research.com Materials Science in Japan Leader Award

Overview

Isamu Akasaki was affiliated with Meijo University in Japan. Their research primarily spanned multiple fields including Physics and Astronomy, Materials Science, and Engineering. Within these, their work touched on key subfields such as Condensed Matter Physics, Materials Chemistry, Electronic, Optical and Magnetic Materials, Biomedical Engineering, and Atomic and Molecular Physics, and Optics.

The scientific output of Isamu Akasaki included numerous publications centered around semiconductor devices and materials. The main topics of their research included:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Semiconductor Quantum Structures and Devices
  • Photocathodes and Microchannel Plates
  • Metal and Thin Film Mechanics
  • Nanowire Synthesis and Applications

Isamu Akasaki published extensively in several venues, with a notable number of papers appearing in the following journals:

  • Applied Physics Express
  • Japanese Journal of Applied Physics
  • Journal of Crystal Growth
  • ACS Applied Materials & Interfaces
  • Applied Physics Letters

Their research collaborations involved frequent co-authors such as:

  • Satoshi Kamiyama
  • Motoaki Iwaya
  • Tetsuya Takeuchi
  • Weifang Lu
  • Naoki Sone

Selected recent papers from Isamu Akasaki's body of work include:

  • "Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire" (2020, Applied Physics Express)
  • "AlGaN-based UV-B laser diode with a high optical confinement factor" (2021, Applied Physics Letters)
  • "Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping" (2020, Applied Physics Express)
  • "Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers" (2020, Applied Physics Express)
  • "AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo-convex pattern AlN on a sapphire substrate" (2021, Applied Physics Express)

Best Publications

  • Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

    H. Amano;N. Sawaki;I. Akasaki;Y. Toyoda

  • P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

    Hiroshi Amano;Masahiro Kito;Kazumasa Hiramatsu;Isamu Akasaki

  • Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

    Tetsuya Takeuchi;Shigetoshi Sota;Maki Katsuragawa;Miho Komori

  • Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

    Isamu Akasaki;Hiroshi Amano;Yasuo Koide;Kazumasa Hiramatsu

  • Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

    Isamu Akasaki;Hiroshi Amano

  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

    Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell

  • Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

    Tetsuya Takeuchi;Christian Wetzel;Shigeo Yamaguchi;Hiromitsu Sakai

  • Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

    Tetsuya Takeuchi;Hiroshi Amano;Isamu Akasaki

  • Shortest wavelength semiconductor laser diode

    I. Akasaki;S. Sota;H. Sakai;T. Tanaka

  • Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

    K. Hiramatsu;S. Itoh;H. Amano;I. Akasaki

  • Optical Properties of Strained AlGaN and GaInN on GaN

    Tetsuya Takeuchi;Hideo Takeuchi;Shigetoshi Sota;Hiromitsu Sakai

  • Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

    Hiroshi Amano;Isamu Akasaki;Kazumasa Hiramatsu;Norikatsu Koide

  • Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED

    Isamu Akasaki;Hiroshi Amano;Masahiro Kito;Kazumasa Hiramatsu

  • P-TYPE CONDUCTION IN MG-DOPED GAN AND AL0.08GA0.92N GROWN BY METALORGANIC VAPOR PHASE EPITAXY

    T. Tanaka;A. Watanabe;H. Amano;Y. Kobayashi

  • The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

    A. Watanabe;T. Takeuchi;K. Hirosawa;H. Amano

  • Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain

    Theeradetch Detchprohm;Kazumasa Hiramatsu;Kenji Itoh;Isamu Akasaki

  • Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

    T. Detchprohm;K. Hiramatsu;H. Amano;I. Akasaki

  • Pit formation in GaInN quantum wells

    Y. Chen;T. Takeuchi;H. Amano;I. Akasaki

  • Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

    Kazuhito Ban;Jun-ichi Yamamoto;Kenichiro Takeda;Kimiyasu Ide

  • Improved Efficiency of 255?280 nm AlGaN-Based Light-Emitting Diodes

    Cyril Pernot;Myunghee Kim;Shinya Fukahori;Tetsuhiko Inazu

Frequent Co-Authors

Motoaki Iwaya
Motoaki Iwaya Meijo University
Satoshi Kamiyama
Satoshi Kamiyama Meijo University
Hiroshi Amano
Hiroshi Amano Nagoya University
Tetsuya Takeuchi
Tetsuya Takeuchi Meijo University
Bo Monemar
Bo Monemar Linköping University
Nobuhiko Sawaki
Nobuhiko Sawaki Aichi Institute of Technology
Kazumasa Hiramatsu
Kazumasa Hiramatsu Mie University
Theeradetch Detchprohm
Theeradetch Detchprohm Georgia Institute of Technology
Weimin Chen
Weimin Chen Linköping University
Bruno K. Meyer
Bruno K. Meyer University of Giessen

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