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Motoaki Iwaya

Motoaki Iwaya

Meijo University
Japan

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 48 10779 10413 673 641 638 9543

Motoaki Iwaya publications per year

The chart shows the history of publications by Motoaki Iwaya between 1997 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Motoaki Iwaya published across 29 years, from 1997 to 2025, averaging 22.5 papers a year. Output peaked at 67 publications in 2021. 29 of the 653 publications appeared in the last two years.

No. of publications
20 40 60
Bar chart. Horizontal axis: year, 1997 to 2025. Vertical axis: number of publications, 0 to 67. Peak 67 publications in 2021. 1997: 1 publication 1998: 2 publications 1999: 10 publications 2000: 13 publications 2001: 11 publications 2002: 20 publications 2003: 11 publications 2004: 20 publications 2005: 18 publications 2006: 28 publications 2007: 29 publications 2008: 20 publications 2009: 21 publications 2010: 22 publications 2011: 29 publications 2012: 20 publications 2013: 22 publications 2014: 18 publications 2015: 8 publications 2016: 40 publications 2017: 33 publications 2018: 25 publications 2019: 52 publications 2020: 50 publications 2021: 67 publications 2022: 21 publications 2023: 13 publications 2024: 19 publications 2025: 10 publications
1997 2025

653 publications in total across all disciplines

View publications per year as a table
Motoaki Iwaya: publications per year, 1997 to 2025
Year Publications
1997 1
1998 2
1999 10
2000 13
2001 11
2002 20
2003 11
2004 20
2005 18
2006 28
2007 29
2008 20
2009 21
2010 22
2011 29
2012 20
2013 22
2014 18
2015 8
2016 40
2017 33
2018 25
2019 52
2020 50
2021 67
2022 21
2023 13
2024 19
2025 10
Total 653
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Motoaki Iwaya publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Motoaki Iwaya sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 630–649 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 638 publications — 93rd percentile

93% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77 638
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Motoaki Iwaya D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Motoaki Iwaya sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 48–49 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 48 D-Index — 17th percentile

17% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598 48
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Motoaki Iwaya is affiliated with Meijo University in Japan and conducts research primarily in the fields of Physics and Astronomy, Engineering, and Materials Science. Their work extensively covers several subfields including Condensed Matter Physics, Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, and Biomedical Engineering.

The main research topics that characterize Motoaki Iwaya's scientific contributions include GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, Semiconductor Quantum Structures and Devices, Metal and Thin Film Mechanics, Semiconductor materials and devices, and Photocathodes and Microchannel Plates.

Motoaki Iwaya has published a number of papers in renowned journals. Selected recent publications include:

  • "Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire," 2020, Applied Physics Express
  • "AlGaN-based UV-B laser diode with a high optical confinement factor," 2021, Applied Physics Letters
  • "RGB monolithic GaInN-based μLED arrays connected via tunnel junctions," 2023, Applied Physics Express
  • "AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo-convex pattern AlN on a sapphire substrate," 2021, Applied Physics Express
  • "Recent development of UV-B laser diodes," 2021, Japanese Journal of Applied Physics

Their research outputs have been disseminated across a variety of publication venues, including:

  • Applied Physics Express
  • physica status solidi (a)
  • Japanese Journal of Applied Physics
  • Applied Physics Letters
  • ACS Applied Materials & Interfaces

Motoaki Iwaya has collaborated frequently with other researchers in their field. Notable coauthors include:

  • Satoshi Kamiyama
  • Tetsuya Takeuchi
  • Isamu Akasaki
  • Sho Iwayama
  • Weifang Lu

Best Publications

  • Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

    Kazuhito Ban;Jun-ichi Yamamoto;Kenichiro Takeda;Kimiyasu Ide

  • Improved Efficiency of 255?280 nm AlGaN-Based Light-Emitting Diodes

    Cyril Pernot;Myunghee Kim;Shinya Fukahori;Tetsuhiko Inazu

  • Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

    Motoaki Iwaya;Tetsuya Takeuchi;Shigeo Yamaguchi;Christian Wetzel

  • Stress and Defect Control in GaN Using Low Temperature Interlayers

    Hiroshi Amano;Motoaki Iwaya;Takayuki Kashima;Maki Katsuragawa

  • 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

    Kazuyoshi Iida;Takeshi Kawashima;Atsushi Miyazaki;Hideki Kasugai

  • Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes

    Cyril Pernot;Akira Hirano;Motoaki Iwaya;Theeradetch Detchprohm

  • Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

    Yuka Kuwano;Mitsuru Kaga;Takatoshi Morita;Kouji Yamashita

  • High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio

    Masataka Imura;Kiyotaka Nakano;Naoki Fujimoto;Narihito Okada

  • Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

    Cyril Pernot;Shinya Fukahori;Tetsuhiko Inazu;Takehiko Fujita

  • Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers

    Masataka Imura;Kiyotaka Nakano;Gou Narita;Naoki Fujimoto

  • Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure

    Satoshi Kamiyama;Motoaki Iwaya;Nobuaki Hayashi;Tetsuya Takeuchi

  • Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy

    Masataka Imura;Kiyotaka Nakano;Naoki Fujimoto;Narihito Okada

  • High‐Efficiency GaN/AlxGa1—xN Multi‐Quantum‐Well Light Emitter Grown on Low‐Dislocation Density AlxGa1—xN

    M. Iwaya;S. Terao;T. Sano;S. Takanami

  • Control of Dislocations and Stress in AlGaN on Sapphire Using a Low Temperature Interlayer

    H. Amano;M. Iwaya;N. Hayashi;T. Kashima

  • UV Light‐Emitting Diode Fabricated on Hetero‐ELO‐Grown Al0.22Ga0.78N with Low Dislocation Density

    S. Kamiyama;M. Iwaya;S. Takanami;S. Terao

  • GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate

    Yousuke Kuwahara;Takahiro Fujii;Toru Sugiyama;Daisuke Iida

  • Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

    S. Kamiyama;T. Maeda;Y. Nakamura;M. Iwaya

  • AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

    Myunghee Kim;Takehiko Fujita;Shinya Fukahori;Tetsuhiko Inazu

  • Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors

    Kazuki Ikeyama;Yugo Kozuka;Kenjo Matsui;Shotaro Yoshida

  • Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification

    N. Okada;N. Kato;S. Sato;T. Sumii

  • Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire

    Kosuke Sato;Kosuke Sato;Shinji Yasue;Kazuki Yamada;Shunya Tanaka

Frequent Co-Authors

Satoshi Kamiyama
Satoshi Kamiyama Meijo University
Hiroshi Amano
Hiroshi Amano Nagoya University
Tetsuya Takeuchi
Tetsuya Takeuchi Meijo University
Bo Monemar
Bo Monemar Linköping University
Akira Yoshikawa
Akira Yoshikawa Tohoku University
Theeradetch Detchprohm
Theeradetch Detchprohm Georgia Institute of Technology
Yasuo Kitaoka
Yasuo Kitaoka Osaka University
Fernando Ponce
Fernando Ponce Arizona State University
Yusuke Mori
Yusuke Mori Osaka University
Kazuhiro Hono
Kazuhiro Hono National Institute for Materials Science

External Links

Personal website of Motoaki Iwaya Google Scholar page

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Hideki Hirayama

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Publications: 42

Russell D. Dupuis

Russell D. Dupuis

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Publications: 35

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Publications: 28

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Satoshi Kamiyama

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Publications: 27

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