D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 45 Citations 7,627 584 World Ranking 8509 National Ranking 557

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optics
  • Optoelectronics

Motoaki Iwaya mostly deals with Optoelectronics, Epitaxy, Optics, Dislocation and Light-emitting diode. Motoaki Iwaya has included themes like Layer, Sapphire substrate and Substrate in his Optoelectronics study. His work in the fields of Layer, such as Nitride, intersects with other areas such as Vapor phase.

The concepts of his Epitaxy study are interwoven with issues in Sapphire, Crystallography, Transmission electron microscopy and Analytical chemistry. Motoaki Iwaya interconnects Microstructure, Active layer and Lateral overgrowth in the investigation of issues within Dislocation. His Light-emitting diode research incorporates elements of Gallium nitride, Voltage drop and Tunnel junction.

His most cited work include:

  • Improved Efficiency of 255?280 nm AlGaN-Based Light-Emitting Diodes (200 citations)
  • Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN (171 citations)
  • Stress and Defect Control in GaN Using Low Temperature Interlayers (155 citations)

What are the main themes of his work throughout his whole career to date?

Motoaki Iwaya mainly focuses on Optoelectronics, Epitaxy, Light-emitting diode, Layer and Metalorganic vapour phase epitaxy. Motoaki Iwaya works mostly in the field of Optoelectronics, limiting it down to topics relating to Laser and, in certain cases, Ultraviolet, as a part of the same area of interest. His Epitaxy study integrates concerns from other disciplines, such as Crystallography, Dislocation, Analytical chemistry and Diffraction.

While the research belongs to areas of Analytical chemistry, Motoaki Iwaya spends his time largely on the problem of Doping, intersecting his research to questions surrounding Exciton. His Light-emitting diode research includes themes of Gallium nitride and Quantum efficiency. His work on Substrate as part of general Layer research is frequently linked to Quality, bridging the gap between disciplines.

He most often published in these fields:

  • Optoelectronics (74.73%)
  • Epitaxy (23.27%)
  • Light-emitting diode (21.09%)

What were the highlights of his more recent work (between 2018-2021)?

  • Optoelectronics (74.73%)
  • Nanowire (7.27%)
  • Laser (11.09%)

In recent papers he was focusing on the following fields of study:

His main research concerns Optoelectronics, Nanowire, Laser, Light-emitting diode and Diode. His study in Optoelectronics is interdisciplinary in nature, drawing from both Layer and Metalorganic vapour phase epitaxy. His biological study spans a wide range of topics, including Epitaxy, Tunnel junction, Multiple quantum, Shell and Crystal.

He has researched Laser in several fields, including Nitride, Polarization and Mode control. His study on Light-emitting diode also encompasses disciplines like

  • Quantum well together with Wavelength,
  • Quantum efficiency and related Fluorescence. In his study, Photoluminescence and Surface plasmon is strongly linked to Green-light, which falls under the umbrella field of Diode.

Between 2018 and 2021, his most popular works were:

  • GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors. (22 citations)
  • Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire (18 citations)
  • Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers (13 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Optoelectronics
  • Laser

Motoaki Iwaya mainly investigates Optoelectronics, Laser, Diode, Light-emitting diode and Nanowire. His Ultraviolet, Laser diode and Quantum efficiency study in the realm of Optoelectronics connects with subjects such as Ultraviolet b and Cladding. The study incorporates disciplines such as Power density and Dislocation in addition to Ultraviolet.

The various areas that Motoaki Iwaya examines in his Diode study include Waveguide and Green-light. His Light-emitting diode research is multidisciplinary, incorporating perspectives in Quantum well, Radiative transfer and Carrier lifetime. Motoaki Iwaya works mostly in the field of Shell, limiting it down to topics relating to Core and, in certain cases, Epitaxy.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Improved Efficiency of 255?280 nm AlGaN-Based Light-Emitting Diodes

Cyril Pernot;Myunghee Kim;Shinya Fukahori;Tetsuhiko Inazu.
Applied Physics Express (2010)

298 Citations

Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

Kazuhito Ban;Jun-ichi Yamamoto;Kenichiro Takeda;Kimiyasu Ide.
Applied Physics Express (2011)

269 Citations

Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

Motoaki Iwaya;Tetsuya Takeuchi;Shigeo Yamaguchi;Christian Wetzel.
Japanese Journal of Applied Physics (1998)

267 Citations

Stress and Defect Control in GaN Using Low Temperature Interlayers

Hiroshi Amano;Motoaki Iwaya;Takayuki Kashima;Maki Katsuragawa.
Japanese Journal of Applied Physics (1998)

237 Citations

Light-emitting semiconductor device

Kamiyama Satoshi;Amano Hiroshi;Akasaki Isamu;Iwaya Motoaki.
(2008)

180 Citations

350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

Kazuyoshi Iida;Takeshi Kawashima;Atsushi Miyazaki;Hideki Kasugai.
Japanese Journal of Applied Physics (2004)

178 Citations

Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes

Cyril Pernot;Akira Hirano;Motoaki Iwaya;Theeradetch Detchprohm.
Japanese Journal of Applied Physics (2000)

156 Citations

High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio

Masataka Imura;Kiyotaka Nakano;Naoki Fujimoto;Narihito Okada.
Japanese Journal of Applied Physics (2006)

125 Citations

High‐Efficiency GaN/AlxGa1—xN Multi‐Quantum‐Well Light Emitter Grown on Low‐Dislocation Density AlxGa1—xN

M. Iwaya;S. Terao;T. Sano;S. Takanami.
Physica Status Solidi (a) (2001)

122 Citations

Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

Yuka Kuwano;Mitsuru Kaga;Takatoshi Morita;Kouji Yamashita.
Japanese Journal of Applied Physics (2013)

120 Citations

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