Motoaki Iwaya mostly deals with Optoelectronics, Epitaxy, Optics, Dislocation and Light-emitting diode. Motoaki Iwaya has included themes like Layer, Sapphire substrate and Substrate in his Optoelectronics study. His work in the fields of Layer, such as Nitride, intersects with other areas such as Vapor phase.
The concepts of his Epitaxy study are interwoven with issues in Sapphire, Crystallography, Transmission electron microscopy and Analytical chemistry. Motoaki Iwaya interconnects Microstructure, Active layer and Lateral overgrowth in the investigation of issues within Dislocation. His Light-emitting diode research incorporates elements of Gallium nitride, Voltage drop and Tunnel junction.
Motoaki Iwaya mainly focuses on Optoelectronics, Epitaxy, Light-emitting diode, Layer and Metalorganic vapour phase epitaxy. Motoaki Iwaya works mostly in the field of Optoelectronics, limiting it down to topics relating to Laser and, in certain cases, Ultraviolet, as a part of the same area of interest. His Epitaxy study integrates concerns from other disciplines, such as Crystallography, Dislocation, Analytical chemistry and Diffraction.
While the research belongs to areas of Analytical chemistry, Motoaki Iwaya spends his time largely on the problem of Doping, intersecting his research to questions surrounding Exciton. His Light-emitting diode research includes themes of Gallium nitride and Quantum efficiency. His work on Substrate as part of general Layer research is frequently linked to Quality, bridging the gap between disciplines.
His main research concerns Optoelectronics, Nanowire, Laser, Light-emitting diode and Diode. His study in Optoelectronics is interdisciplinary in nature, drawing from both Layer and Metalorganic vapour phase epitaxy. His biological study spans a wide range of topics, including Epitaxy, Tunnel junction, Multiple quantum, Shell and Crystal.
He has researched Laser in several fields, including Nitride, Polarization and Mode control. His study on Light-emitting diode also encompasses disciplines like
Motoaki Iwaya mainly investigates Optoelectronics, Laser, Diode, Light-emitting diode and Nanowire. His Ultraviolet, Laser diode and Quantum efficiency study in the realm of Optoelectronics connects with subjects such as Ultraviolet b and Cladding. The study incorporates disciplines such as Power density and Dislocation in addition to Ultraviolet.
The various areas that Motoaki Iwaya examines in his Diode study include Waveguide and Green-light. His Light-emitting diode research is multidisciplinary, incorporating perspectives in Quantum well, Radiative transfer and Carrier lifetime. Motoaki Iwaya works mostly in the field of Shell, limiting it down to topics relating to Core and, in certain cases, Epitaxy.
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Improved Efficiency of 255?280 nm AlGaN-Based Light-Emitting Diodes
Cyril Pernot;Myunghee Kim;Shinya Fukahori;Tetsuhiko Inazu.
Applied Physics Express (2010)
Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
Kazuhito Ban;Jun-ichi Yamamoto;Kenichiro Takeda;Kimiyasu Ide.
Applied Physics Express (2011)
Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
Motoaki Iwaya;Tetsuya Takeuchi;Shigeo Yamaguchi;Christian Wetzel.
Japanese Journal of Applied Physics (1998)
Stress and Defect Control in GaN Using Low Temperature Interlayers
Hiroshi Amano;Motoaki Iwaya;Takayuki Kashima;Maki Katsuragawa.
Japanese Journal of Applied Physics (1998)
Light-emitting semiconductor device
Kamiyama Satoshi;Amano Hiroshi;Akasaki Isamu;Iwaya Motoaki.
(2008)
350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
Kazuyoshi Iida;Takeshi Kawashima;Atsushi Miyazaki;Hideki Kasugai.
Japanese Journal of Applied Physics (2004)
Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
Cyril Pernot;Akira Hirano;Motoaki Iwaya;Theeradetch Detchprohm.
Japanese Journal of Applied Physics (2000)
High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio
Masataka Imura;Kiyotaka Nakano;Naoki Fujimoto;Narihito Okada.
Japanese Journal of Applied Physics (2006)
High‐Efficiency GaN/AlxGa1—xN Multi‐Quantum‐Well Light Emitter Grown on Low‐Dislocation Density AlxGa1—xN
M. Iwaya;S. Terao;T. Sano;S. Takanami.
Physica Status Solidi (a) (2001)
Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
Yuka Kuwano;Mitsuru Kaga;Takatoshi Morita;Kouji Yamashita.
Japanese Journal of Applied Physics (2013)
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