Motoaki Iwaya

Overview

Best Publications

• Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

  Kazuhito Ban;Jun-ichi Yamamoto;Kenichiro Takeda;Kimiyasu Ide

  334
  Citations

• Improved Efficiency of 255?280 nm AlGaN-Based Light-Emitting Diodes

  Cyril Pernot;Myunghee Kim;Shinya Fukahori;Tetsuhiko Inazu

  324
  Citations

• Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

  Motoaki Iwaya;Tetsuya Takeuchi;Shigeo Yamaguchi;Christian Wetzel

  271
  Citations

• Stress and Defect Control in GaN Using Low Temperature Interlayers

  Hiroshi Amano;Motoaki Iwaya;Takayuki Kashima;Maki Katsuragawa

  239
  Citations

• 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

  Kazuyoshi Iida;Takeshi Kawashima;Atsushi Miyazaki;Hideki Kasugai

  201
  Citations

• Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes

  Cyril Pernot;Akira Hirano;Motoaki Iwaya;Theeradetch Detchprohm

  162
  Citations

• Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

  Yuka Kuwano;Mitsuru Kaga;Takatoshi Morita;Kouji Yamashita

  155
  Citations

• High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio

  Masataka Imura;Kiyotaka Nakano;Naoki Fujimoto;Narihito Okada

  145
  Citations

• Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

  Cyril Pernot;Shinya Fukahori;Tetsuhiko Inazu;Takehiko Fujita

  130
  Citations

• Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers

  Masataka Imura;Kiyotaka Nakano;Gou Narita;Naoki Fujimoto

  128
  Citations

• Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure

  Satoshi Kamiyama;Motoaki Iwaya;Nobuaki Hayashi;Tetsuya Takeuchi

  125
  Citations

• Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy

  Masataka Imura;Kiyotaka Nakano;Naoki Fujimoto;Narihito Okada

  124
  Citations

• High‐Efficiency GaN/AlxGa1—xN Multi‐Quantum‐Well Light Emitter Grown on Low‐Dislocation Density AlxGa1—xN

  M. Iwaya;S. Terao;T. Sano;S. Takanami

  123
  Citations

• Control of Dislocations and Stress in AlGaN on Sapphire Using a Low Temperature Interlayer

  H. Amano;M. Iwaya;N. Hayashi;T. Kashima

  117
  Citations

• UV Light‐Emitting Diode Fabricated on Hetero‐ELO‐Grown Al0.22Ga0.78N with Low Dislocation Density

  S. Kamiyama;M. Iwaya;S. Takanami;S. Terao

  107
  Citations

• GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate

  Yousuke Kuwahara;Takahiro Fujii;Toru Sugiyama;Daisuke Iida

  105
  Citations

• Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

  S. Kamiyama;T. Maeda;Y. Nakamura;M. Iwaya

  104
  Citations

• AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

  Myunghee Kim;Takehiko Fujita;Shinya Fukahori;Tetsuhiko Inazu

  104
  Citations

• Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors

  Kazuki Ikeyama;Yugo Kozuka;Kenjo Matsui;Shotaro Yoshida

  101
  Citations

• Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification

  N. Okada;N. Kato;S. Sato;T. Sumii

  95
  Citations

• Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire

  Kosuke Sato;Kosuke Sato;Shinji Yasue;Kazuki Yamada;Shunya Tanaka

  91
  Citations