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Motoaki Iwaya

Motoaki Iwaya

D-Index & Metrics

Materials Science

D-Index
48
Citations
9543
World Ranking
10779
National Ranking
673

Motoaki Iwaya publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Motoaki Iwaya sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 638 publications — 93rd percentile

93% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Motoaki Iwaya D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Motoaki Iwaya sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 48 D-Index — 17th percentile

17% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Motoaki Iwaya is affiliated with Meijo University in Japan and conducts research primarily in the fields of Physics and Astronomy, Engineering, and Materials Science. Their work extensively covers several subfields including Condensed Matter Physics, Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, and Biomedical Engineering.

The main research topics that characterize Motoaki Iwaya's scientific contributions include GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, Semiconductor Quantum Structures and Devices, Metal and Thin Film Mechanics, Semiconductor materials and devices, and Photocathodes and Microchannel Plates.

Motoaki Iwaya has published a number of papers in renowned journals. Selected recent publications include:

  • "Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire," 2020, Applied Physics Express
  • "AlGaN-based UV-B laser diode with a high optical confinement factor," 2021, Applied Physics Letters
  • "RGB monolithic GaInN-based μLED arrays connected via tunnel junctions," 2023, Applied Physics Express
  • "AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo-convex pattern AlN on a sapphire substrate," 2021, Applied Physics Express
  • "Recent development of UV-B laser diodes," 2021, Japanese Journal of Applied Physics

Their research outputs have been disseminated across a variety of publication venues, including:

  • Applied Physics Express
  • physica status solidi (a)
  • Japanese Journal of Applied Physics
  • Applied Physics Letters
  • ACS Applied Materials & Interfaces

Motoaki Iwaya has collaborated frequently with other researchers in their field. Notable coauthors include:

  • Satoshi Kamiyama
  • Tetsuya Takeuchi
  • Isamu Akasaki
  • Sho Iwayama
  • Weifang Lu

Best Publications

  • Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

    Kazuhito Ban;Jun-ichi Yamamoto;Kenichiro Takeda;Kimiyasu Ide

  • Improved Efficiency of 255?280 nm AlGaN-Based Light-Emitting Diodes

    Cyril Pernot;Myunghee Kim;Shinya Fukahori;Tetsuhiko Inazu

  • Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

    Motoaki Iwaya;Tetsuya Takeuchi;Shigeo Yamaguchi;Christian Wetzel

  • Stress and Defect Control in GaN Using Low Temperature Interlayers

    Hiroshi Amano;Motoaki Iwaya;Takayuki Kashima;Maki Katsuragawa

  • 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

    Kazuyoshi Iida;Takeshi Kawashima;Atsushi Miyazaki;Hideki Kasugai

  • Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes

    Cyril Pernot;Akira Hirano;Motoaki Iwaya;Theeradetch Detchprohm

  • Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

    Yuka Kuwano;Mitsuru Kaga;Takatoshi Morita;Kouji Yamashita

  • High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio

    Masataka Imura;Kiyotaka Nakano;Naoki Fujimoto;Narihito Okada

  • Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

    Cyril Pernot;Shinya Fukahori;Tetsuhiko Inazu;Takehiko Fujita

  • Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers

    Masataka Imura;Kiyotaka Nakano;Gou Narita;Naoki Fujimoto

  • Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure

    Satoshi Kamiyama;Motoaki Iwaya;Nobuaki Hayashi;Tetsuya Takeuchi

  • Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy

    Masataka Imura;Kiyotaka Nakano;Naoki Fujimoto;Narihito Okada

  • High‐Efficiency GaN/AlxGa1—xN Multi‐Quantum‐Well Light Emitter Grown on Low‐Dislocation Density AlxGa1—xN

    M. Iwaya;S. Terao;T. Sano;S. Takanami

  • Control of Dislocations and Stress in AlGaN on Sapphire Using a Low Temperature Interlayer

    H. Amano;M. Iwaya;N. Hayashi;T. Kashima

  • UV Light‐Emitting Diode Fabricated on Hetero‐ELO‐Grown Al0.22Ga0.78N with Low Dislocation Density

    S. Kamiyama;M. Iwaya;S. Takanami;S. Terao

  • GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate

    Yousuke Kuwahara;Takahiro Fujii;Toru Sugiyama;Daisuke Iida

  • Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

    S. Kamiyama;T. Maeda;Y. Nakamura;M. Iwaya

  • AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

    Myunghee Kim;Takehiko Fujita;Shinya Fukahori;Tetsuhiko Inazu

  • Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors

    Kazuki Ikeyama;Yugo Kozuka;Kenjo Matsui;Shotaro Yoshida

  • Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification

    N. Okada;N. Kato;S. Sato;T. Sumii

  • Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire

    Kosuke Sato;Kosuke Sato;Shinji Yasue;Kazuki Yamada;Shunya Tanaka

Frequent Co-Authors

Satoshi Kamiyama
Satoshi Kamiyama Meijo University
Hiroshi Amano
Hiroshi Amano Nagoya University
Tetsuya Takeuchi
Tetsuya Takeuchi Meijo University
Bo Monemar
Bo Monemar Linköping University
Akira Yoshikawa
Akira Yoshikawa Tohoku University
Theeradetch Detchprohm
Theeradetch Detchprohm Georgia Institute of Technology
Yasuo Kitaoka
Yasuo Kitaoka Osaka University
Fernando Ponce
Fernando Ponce Arizona State University
Yusuke Mori
Yusuke Mori Osaka University
Kazuhiro Hono
Kazuhiro Hono National Institute for Materials Science

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