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Hideki Hirayama

Hideki Hirayama

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
44
Citations
9840
World Ranking
3669
National Ranking
140

Overview

Hideki Hirayama is affiliated with RIKEN in Japan and focuses their research primarily on Physics and Astronomy, Materials Science, and Engineering. Their work spans several subfields including Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Spectroscopy, and Atomic and Molecular Physics, and Optics.

The main topics that characterize their research include GaN-based semiconductor devices and materials, Ga2O3 and related materials, Spectroscopy and Laser Applications, ZnO doping and properties, Terahertz technology and applications, Semiconductor Quantum Structures and Devices, and Atmospheric Ozone and Climate.

They have contributed to various academic journals with a particular presence in these frequent publication venues:

  • Scientific Reports
  • physica status solidi (a)
  • Japanese Journal of Applied Physics
  • Applied Physics Express
  • physica status solidi (b)

Hideki Hirayama's recent selected papers include:

  • "The 2020 UV emitter roadmap," 2020, Journal of Physics D Applied Physics
  • "Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance," 2022, Scientific Reports
  • "External Quantum Efficiency of 6.5% at 300 nm Emission and 4.7% at 310 nm Emission on Bare Wafer of AlGaN-Based UVB LEDs," 2020, ACS Applied Electronic Materials
  • "Suppressing the efficiency droop in AlGaN-based UVB LEDs," 2021, Nanotechnology
  • "High internal quantum efficiency and optically pumped stimulated emission in AlGaN-based UV-C multiple quantum wells," 2020, Applied Physics Letters

Their frequent coauthors include:

  • M. Ajmal Khan
  • Tsung-Tse Lin
  • Noritoshi Maeda
  • Masafumi Jo
  • Li Wang

Best Publications

  • Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

    Hideki Hirayama;Noritoshi Maeda;Sachie Fujikawa;Shiro Toyoda

  • Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

    Takayoshi Takano;Takuya Mino;Jun Sakai;Norimichi Noguchi

  • 222–282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

    Hideki Hirayama;Sachie Fujikawa;Norimichi Noguchi;Jun Norimatsu

  • The 2020 UV emitter roadmap

    Hiroshi Amano;Ramón Collazo;Carlo De Santi;Sven Einfeldt

  • 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

    Hideki Hirayama;Tohru Yatabe;Norimichi Noguchi;Tomoaki Ohashi

  • Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

    Hideki Hirayama

  • Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer

    Hideki Hirayama;Yusuke Tsukada;Tetsutoshi Maeda;Norihiko Kamata

  • Microassembly of semiconductor three-dimensional photonic crystals.

    Kanna Aoki;Hideki T. Miyazaki;Hideki Hirayama;Kyoji Inoshita

  • Marked enhancement of 320–360 nm ultraviolet emission in quaternary InxAlyGa1−x−yN with In-segregation effect

    Hideki Hirayama;Atsuhiro Kinoshita;Takayoshi Yamabi;Yasushi Enomoto

  • Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers

    A. Kinoshita;H. Hirayama;M. Ainoya;Y. Aoyagi

  • Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

    Hideki Hirayama;Satoru Tanaka;Peter Ramvall;Yoshinobu Aoyagi

  • Fabrication of a low threading dislocation density ELO-AlN template for application to deep-UV LEDs

    Hideki Hirayama;Sachie Fujikawa;Jun Norimatsu;Takayoshi Takano

  • Recent Progress in AlGaN-Based Deep-UV LEDs

    Hideki Hirayama;Sachie Fujikawa;Norihiko Kamata

  • High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer

    Yukio Kashima;Noritoshi Maeda;Eriko Matsuura;Masafumi Jo

  • Determination of photoluminescence mechanism in InGaN quantum wells

    Philippe Riblet;Hideki Hirayama;Atsuhiro Kinoshita;Akira Hirata

  • 227 nm AlGaN Light-Emitting Diode with 0.15 mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density

    Hideki Hirayama;Norimichi Noguchi;Tohru Yatabe;Norihiko Kamata

  • 222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties

    Hideki Hirayama;Norimichi Noguchi;Norihiko Kamata

  • Stimulated emission from optically pumped GaN quantum dots

    Satoru Tanaka;Hideki Hirayama;Yoshinobu Aoyagi;Yukio Narukawa

  • Realization of high-efficiency deep-UV LEDs using transparent p-AlGaN contact layer

    Noritoshi Maeda;Hideki Hirayama

  • Novel surface emitting laser diode using photonic band‐gap crystal cavity

    Hideki Hirayama;Tetsuko Hamano;Yoshinobu Aoyagi

  • Calculating the linear response functions of noninteracting electrons with a time-dependent Schrödinger equation

    Toshiaki Iitaka;Shintaro Nomura;Hideki Hirayama;Xinwei Zhao

Frequent Co-Authors

Yoshinobu Aoyagi
Yoshinobu Aoyagi Ritsumeikan University
Akihiko Hirata
Akihiko Hirata Waseda University
Tadeusz Suski
Tadeusz Suski Polish Academy of Sciences
Yasuharu Suematsu
Yasuharu Suematsu Tokyo Institute of Technology
Masahiro Asada
Masahiro Asada Tokyo Institute of Technology
Shigehisa Arai
Shigehisa Arai Tokyo Institute of Technology
Toshihiko Baba
Toshihiko Baba Yokohama National University
Michael Kneissl
Michael Kneissl Technical University of Berlin
Hiroshi Amano
Hiroshi Amano Nagoya University
Masashi Yoshimura
Masashi Yoshimura Osaka University

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