His primary areas of study are Optoelectronics, Photoluminescence, Quantum dot, Analytical chemistry and Condensed matter physics. His Optoelectronics study frequently links to other fields, such as Pentacene. His Photoluminescence study combines topics from a wide range of disciplines, such as Doping, Epitaxy, Luminescence, Laser ablation and Pulsed laser deposition.
The various areas that Yoshinobu Aoyagi examines in his Quantum dot study include Crystallite, Carbon nanotube, Quantum dot laser and Coulomb blockade. His Analytical chemistry research incorporates elements of Thin film, Trimethylindium and Excitation. The Condensed matter physics study combines topics in areas such as Electron, Quantum point contact and Magnetoresistance.
Yoshinobu Aoyagi spends much of his time researching Condensed matter physics, Optoelectronics, Quantum dot, Analytical chemistry and Photoluminescence. His biological study spans a wide range of topics, including Quantum well, Electron and Magnetic field, Magnetoresistance. As a part of the same scientific study, Yoshinobu Aoyagi usually deals with the Optoelectronics, concentrating on Laser and frequently concerns with Irradiation.
His research in Quantum dot focuses on subjects like Carbon nanotube, which are connected to Coulomb blockade. His research integrates issues of Silicon, Substrate, Atomic layer epitaxy, Epitaxy and Thin film in his study of Analytical chemistry. His Photoluminescence research is multidisciplinary, incorporating elements of Luminescence and Doping.
The scientist’s investigation covers issues in Optoelectronics, Condensed matter physics, Nanotechnology, Quantum dot and Carbon nanotube. In his research on the topic of Optoelectronics, Light-emitting diode is strongly related with Laser. His study in Condensed matter physics is interdisciplinary in nature, drawing from both Spin Hall effect, Spin polarization, Electric field and Photoluminescence.
As part of one scientific family, Yoshinobu Aoyagi deals mainly with the area of Nanotechnology, narrowing it down to issues related to the Irradiation, and often Terahertz radiation and Polysilane. His Quantum dot research includes elements of Gallium arsenide, Molecular physics, Atomic physics, Electron and Magnetic field. While the research belongs to areas of Carbon nanotube, Yoshinobu Aoyagi spends his time largely on the problem of Coulomb blockade, intersecting his research to questions surrounding Ballistic conduction in single-walled carbon nanotubes.
Yoshinobu Aoyagi focuses on Optoelectronics, Organic semiconductor, Condensed matter physics, Thin-film transistor and Carbon nanotube. Yoshinobu Aoyagi has included themes like Field-effect transistor, Transistor and Threshold voltage in his Optoelectronics study. His Organic semiconductor research is multidisciplinary, incorporating elements of Space charge and Monolayer.
His Condensed matter physics research incorporates elements of Magnetic domain, Single domain, Spin polarization and Magnetoresistance. In his research, Quantum dot is intimately related to Ballistic conduction in single-walled carbon nanotubes, which falls under the overarching field of Carbon nanotube quantum dot. As a part of the same scientific family, Yoshinobu Aoyagi mostly works in the field of Quantum dot, focusing on Indium and, on occasion, Optics.
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Self‐assembling GaN quantum dots on AlxGa1−xN surfaces using a surfactant
Satoru Tanaka;Sohachi Iwai;Yoshinobu Aoyagi.
Applied Physics Letters (1996)
Microassembly of semiconductor three-dimensional photonic crystals.
Kanna Aoki;Hideki T. Miyazaki;Hideki Hirayama;Kyoji Inoshita.
Nature Materials (2003)
Anti-Surfactant in III-Nitride Epitaxy –Quantum Dot Formation and Dislocation Termination–
Satoru Tanaka;Misaichi Takeuchi;Yoshinobu Aoyagi.
Japanese Journal of Applied Physics (2000)
Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
Takuma Nanjo;Misaichi Takeuchi;Muneyoshi Suita;Toshiyuki Oishi.
Applied Physics Letters (2008)
Marked enhancement of 320–360 nm ultraviolet emission in quaternary InxAlyGa1−x−yN with In-segregation effect
Hideki Hirayama;Atsuhiro Kinoshita;Takayoshi Yamabi;Yasushi Enomoto.
Applied Physics Letters (2002)
Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces
Hideki Hirayama;Satoru Tanaka;Peter Ramvall;Yoshinobu Aoyagi.
Applied Physics Letters (1998)
Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers
A. Kinoshita;H. Hirayama;M. Ainoya;Y. Aoyagi.
Applied Physics Letters (2000)
Charge injection process in organic field-effect transistors
Takeo Minari;Tetsuhiko Miyadera;Kazuhito Tsukagoshi;Yoshinobu Aoyagi.
Applied Physics Letters (2007)
Contact-metal dependent current injection in pentacene thin-film transistors
S. D. Wang;T. Minari;T. Miyadera;K. Tsukagoshi.
Applied Physics Letters (2007)
Observation of confinement-dependent exciton binding energy of GaN quantum dots
Peter Ramvall;Satoru Tanaka;Shintaro Nomura;Philippe Riblet.
Applied Physics Letters (1998)
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