World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
40
Citations
6699
World Ranking
7303
National Ranking
1329

Yong Xu publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Yong Xu sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 108 publications — 11th percentile

11% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Yong Xu D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Yong Xu sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 40 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Yong Xu is affiliated with Nanjing University of Posts and Telecommunications in China, with a research focus primarily in the field of Engineering, specifically Electrical and Electronic Engineering. Their work spans several related subfields including Polymers and Plastics, Materials Chemistry, Biomedical Engineering, and Cellular and Molecular Neuroscience.

The scientist's research interests concentrate on various advanced topics including:

  • Advanced Memory and Neural Computing
  • Organic Electronics and Photovoltaics
  • Semiconductor materials and devices
  • Conducting polymers and applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Thin-Film Transistor Technologies
  • Integrated Circuits and Semiconductor Failure Analysis

Yong Xu has contributed to a number of research articles in scientific journals, with recent publications featuring topics related to organic transistors, two-dimensional semiconductor devices, and molecular spintronic interfaces. Notable works include:

  • "Ultralow contact resistance in organic transistors via orbital hybridization" (2023) published in Nature Communications
  • "Modifying the Power and Performance of 2-Dimensional MoS2 Field Effect Transistors" (2023) published in Research
  • "Direct laser patterning of two-dimensional lateral transition metal disulfide-oxide-disulfide heterostructures for ultrasensitive sensors" (2020) published in Nano Research
  • "Role of Schottky Barrier and Access Resistance in Organic Field-Effect Transistors" (2020) published in The Journal of Physical Chemistry Letters
  • "Revealing the key role of molecular packing on interface spin polarization at two-dimensional limit in spintronic devices" (2023) published in Science Advances

The researcher collaborates frequently with a group of co-authors, including Huabin Sun, Zhihao Yu, Chee Leong Tan, Xiang Wan, and Guangan Yang, reflecting a collaborative approach in their investigations.

Yong Xu has published extensively in respected journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Organic Electronics, Applied Physics Letters, and The Journal of Physical Chemistry Letters, indicating a broad presence in venues focused on electronic and material sciences.

Best Publications

  • Contact engineering in organic field-effect transistors

    Chuan Liu;Yong Xu;Yong Young Noh

  • Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits

    Yen Fu Lin;Yen Fu Lin;Yong Xu;Sheng Tsung Wang;Song Lin Li

  • Thickness-dependent interfacial Coulomb scattering in atomically thin field-effect transistors.

    Song Lin Li;Katsunori Wakabayashi;Yong Xu;Shu Nakaharai

  • High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

    Haisheng Song;Haisheng Song;Songlin Li;Liang Gao;Yong Xu

  • Current Status and Opportunities of Organic Thin-Film Transistor Technologies

    Xiaojun Guo;Yong Xu;Simon Ogier;Tse Nga Ng

  • Dramatic inversion of charge polarity in diketopyrrolopyrrole-based organic field-effect transistors via a simple nitrile group substitution.

    Hui-Jun Yun;Seok-Ju Kang;Yong Xu;Seul Ong Kim

  • Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors

    Yong Xu;Takeo Minari;Kazuhito Tsukagoshi;J. A. Chroboczek

  • Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

    Huihui Zhu;Eun-Sol Shin;Ao Liu;Dongseob Ji

  • Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits.

    Ao Liu;Huihui Zhu;Huabin Sun;Yong Xu

  • Doping: A Key Enabler for Organic Transistors.

    Yong Xu;Huabin Sun;Ao Liu;Hui-Hui Zhu

  • Room-Temperature Solution-Synthesized p-Type Copper(I) Iodide Semiconductors for Transparent Thin-Film Transistors and Complementary Electronics

    Ao Liu;Huihui Zhu;Won-Tae Park;Seok-Ju Kang

  • Highly enhanced charge injection in thienoacene-based organic field-effect transistors with chemically doped contact

    Takeo Minari;Peter Darmawan;Chuan Liu;Yun Li

  • Development of high-performance printed organic field-effect transistors and integrated circuits

    Yong Xu;Chuan Liu;Dongyoon Khim;Yong-Young Noh

  • Control of Ambipolar and Unipolar Transport in Organic Transistors by Selective Inkjet‐Printed Chemical Doping for High Performance Complementary Circuits

    Dongyoon Khim;Dongyoon Khim;Kang-Jun Baeg;Mario Caironi;Chuan Liu

  • Modified transmission-line method for contact resistance extraction in organic field-effect transistors

    Y. Xu;R. Gwoziecki;Isabelle Chartier;R. Coppard

  • Critical Impact of Gate Dielectric Interfaces on the Contact Resistance of High-Performance Organic Field-Effect Transistors

    Chuan Liu;Yong Xu;Yun Li;William Scheideler

  • Large Enhancement of Carrier Transport in Solution-Processed Field-Effect Transistors by Fluorinated Dielectric Engineering.

    Dongyoon Khim;Yong Xu;Kang-Jun Baeg;Minji Kang

  • Ultralow contact resistance in organic transistors via orbital hybridization

    Unknown

  • Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates

    Mei Yin Chan;Katsuyoshi Komatsu;Song-Lin Li;Yong Xu

  • Exploring the Charge Transport in Conjugated Polymers.

    Yong Xu;Huabin Sun;Wenwu Li;Yen-Fu Lin

  • Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors.

    Yen Fu Lin;Yong Xu;Che Yi Lin;Yuen Wuu Suen

Frequent Co-Authors

Yong-Young Noh
Yong-Young Noh Pohang University of Science and Technology
Chuan Liu
Chuan Liu Sun Yat-sen University
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Kazuhito Tsukagoshi
Kazuhito Tsukagoshi National Institute for Materials Science
Takeo Minari
Takeo Minari National Institute for Materials Science
Dongyoon Khim
Dongyoon Khim Imperial College London
Yi Shi
Yi Shi Nanjing University
Dong-Yu Kim
Dong-Yu Kim Gwangju Institute of Science and Technology
Xinran Wang
Xinran Wang Nanjing University
Kang-Jun Baeg
Kang-Jun Baeg Pukyong National University

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