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D-Index & Metrics

Materials Science

D-Index
46
Citations
9270
World Ranking
11366
National Ranking
505

Kang-Jun Baeg publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Kang-Jun Baeg sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 137 publications — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Kang-Jun Baeg D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Kang-Jun Baeg sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 46 D-Index — 12th percentile

12% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Kang-Jun Baeg is affiliated with Pukyong National University in South Korea and has contributed significantly to research in engineering and materials science, particularly in electrical and electronic engineering and materials chemistry.

Their recent research publications cover topics related to advanced battery materials and flexible electronics. Notable papers include:

  • Flexible Electronic Systems on Plastic Substrates and Textiles for Smart Wearable Technologies, 2020, Advanced Materials Technologies
  • Multimodal Capturing of Polysulfides by Phosphorus-Doped Carbon Composites for Flexible High-Energy-Density Lithium-Sulfur Batteries, 2022, Small
  • Facile fabrication of solution-processed solid-electrolytes for high-energy-density all-solid-state-batteries by enhanced interfacial contact, 2020, Scientific Reports
  • Flexible high-energy-density lithium-sulfur batteries using nanocarbon-embedded fibrous sulfur cathodes and membrane separators, 2021, NPG Asia Materials
  • A Novel Strategy to Overcome the Hurdle for Commercial All-Solid-State Batteries via Low-Cost Synthesis of Sulfide Solid Electrolytes, 2021, Small Methods

Baeg's frequent coauthors include:

  • Jun-Woo Park
  • Byung Gon Kim
  • Ik-Hyeon Choi
  • Joong Tark Han
  • Doohun Kim

Common publication venues where Baeg's work appears include:

  • Small
  • SSRN Electronic Journal
  • Small Methods
  • Organic Electronics
  • Journal of the Korean Physical Society

Their main fields of study span:

  • Engineering
  • Materials Science

Subfields of particular focus include:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Biomedical Engineering
  • Polymers and Plastics
  • Electronic, Optical and Magnetic Materials

Key research topics covered in Baeg's work involve:

  • Advanced Battery Materials and Technologies
  • Advancements in Battery Materials
  • Conducting Polymers and Applications
  • Advanced Sensor and Energy Harvesting Materials
  • Organic Electronics and Photovoltaics
  • Advanced Battery Technologies Research
  • Supercapacitor Materials and Fabrication

Best Publications

  • Organic light detectors: photodiodes and phototransistors.

    Kang-Jun Baeg;Maddalena Binda;Dario Natali;Dario Natali;Mario Caironi

  • Polymer and Organic Nonvolatile Memory Devices

    Paul Heremans;Gerwin H. Gelinck;Robert Müller;Kang Jun Baeg

  • Toward printed integrated circuits based on unipolar or ambipolar polymer semiconductors.

    Kang-Jun Baeg;Mario Caironi;Yong-Young Noh

  • Organic Non-Volatile Memory Based on Pentacene Field-Effect Transistors Using a Polymeric Gate Electret**

    Kang-Jun Baeg;Yong-Young Noh;Jieun Ghim;Seok-Ju Kang

  • Polarity Effects of Polymer Gate Electrets on Non‐Volatile Organic Field‐Effect Transistor Memory

    Kang-Jun Baeg;Yong-Young Noh;Jieun Ghim;Bogyu Lim

  • Controllable Shifts in Threshold Voltage of Top‐Gate Polymer Field‐Effect Transistors for Applications in Organic Nano Floating Gate Memory

    Kang-Jun Baeg;Kang-Jun Baeg;Yong-Young Noh;Yong-Young Noh;Henning Sirringhaus;Dong-Yu Kim

  • Combining electron-neutral building blocks with intramolecular "conformational locks" affords stable, high-mobility p- and n-channel polymer semiconductors.

    Hui Huang;Zhihua Chen;Rocio Ponce Ortiz;Rocio Ponce Ortiz;Christopher Newman

  • Bithiophene-Imide-Based Polymeric Semiconductors for Field-Effect Transistors: Synthesis, Structure−Property Correlations, Charge Carrier Polarity, and Device Stability

    Xugang Guo;Rocio Ponce Ortiz;Yan Zheng;Yan Hu

  • Simple bar-coating process for large-area, high-performance organic field-effect transistors and ambipolar complementary integrated circuits.

    Dongyoon Khim;Hyun Han;Kang-Jun Baeg;Juhwan Kim

  • Printed, Flexible, Organic Nano‐Floating‐Gate Memory: Effects of Metal Nanoparticles and Blocking Dielectrics on Memory Characteristics

    Minji Kang;Kang-Jun Baeg;Dongyoon Khim;Yong-Young Noh

  • High-Performance Top-Gated Organic Field-Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash Memory

    Kang-Jun Baeg;Dongyoon Khim;Juhwan Kim;Byung-Do Yang

  • Remarkable enhancement of hole transport in top-gated N-type polymer field-effect transistors by a high-k dielectric for ambipolar electronic circuits.

    Kang-Jun Baeg;Dongyoon Khim;Soon-Won Jung;Minji Kang

  • Charge injection engineering of ambipolar field-effect transistors for high-performance organic complementary circuits.

    Kang-Jun Baeg;Juhwan Kim;Dongyoon Khim;Mario Caironi

  • Extremely efficient liquid exfoliation and dispersion of layered materials by unusual acoustic cavitation.

    Joong Tark Han;Jeong In Jang;Haena Kim;Jun Yeon Hwang

  • High speeds complementary integrated circuits fabricated with all‐printed polymeric semiconductors

    Kang-Jun Baeg;Kang-Jun Baeg;Dongyoon Khim;Dong-Yu Kim;Soon-Won Jung

  • A New Poly(thienylenevinylene) Derivative with High Mobility and Oxidative Stability for Organic Thin‐Film Transistors and Solar Cells

    Bogyu Lim;Kang-Jun Baeg;Hyung-Gu Jeong;Jang Jo

  • Control of Ambipolar and Unipolar Transport in Organic Transistors by Selective Inkjet‐Printed Chemical Doping for High Performance Complementary Circuits

    Dongyoon Khim;Dongyoon Khim;Kang-Jun Baeg;Mario Caironi;Chuan Liu

  • Flexible Electronic Systems on Plastic Substrates and Textiles for Smart Wearable Technologies

    Kang‐Jun Baeg;Jiyoul Lee

  • Materials Design via Optimized Intramolecular Noncovalent Interactions for High-Performance Organic Semiconductors

    Xiaojie Guo;Qiaogan Liao;Eric F. Manley;Eric F. Manley;Zishan Wu;Zishan Wu

  • Large Enhancement of Carrier Transport in Solution-Processed Field-Effect Transistors by Fluorinated Dielectric Engineering.

    Dongyoon Khim;Yong Xu;Kang-Jun Baeg;Minji Kang

Frequent Co-Authors

Yong-Young Noh
Yong-Young Noh Pohang University of Science and Technology
Dong-Yu Kim
Dong-Yu Kim Gwangju Institute of Science and Technology
Dongyoon Khim
Dongyoon Khim Imperial College London
Antonio Facchetti
Antonio Facchetti Northwestern University
Mario Caironi
Mario Caironi Italian Institute of Technology
Choongik Kim
Choongik Kim Sogang University
Yong Xu
Yong Xu Nanjing University of Posts and Telecommunications
Mun Seok Jeong
Mun Seok Jeong Hanyang University
Zhihua Chen
Zhihua Chen Northwestern University
Tobin J. Marks
Tobin J. Marks Northwestern University

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