World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
50
Citations
13368
World Ranking
10085
National Ranking
2420

Zhihua Chen publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Zhihua Chen sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 106 publications — 4th percentile

4% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Zhihua Chen D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Zhihua Chen sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 50 D-Index — 22nd percentile

22% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Zhihua Chen is affiliated with Northwestern University in the United States and specializes in engineering research with a focus on building and construction. Their work spans multiple subfields, including building and construction, electrical and electronic engineering, civil and structural engineering, mechanical engineering, and environmental engineering. The core topics of Chen's research include building energy and comfort optimization, structural load-bearing analysis, structural behavior of reinforced concrete, BIM and construction integration, structural engineering and vibration analysis, innovations in concrete and construction materials, and advanced memory and neural computing.

Zhihua Chen has contributed to at least five recent publications, reflecting a diverse portfolio of research interests and collaboration. Selected recent papers include:

  • "An elastic and reconfigurable synaptic transistor based on a stretchable bilayer semiconductor," 2022, Nature Electronics
  • "Archetype identification and urban building energy modeling for city-scale buildings based on GIS datasets," 2022, Building Simulation
  • "Impacts of climate change and building energy efficiency improvement on city-scale building energy consumption," 2023, Journal of Building Engineering
  • "Foundry-compatible high-resolution patterning of vertically phase-separated semiconducting films for ultraflexible organic electronics," 2021, Nature Communications
  • "Attention mechanism-based transfer learning model for day-ahead energy demand forecasting of shopping mall buildings," 2023, Energy

The frequent coauthors collaborating with Chen cover a range of expertise and include Yixing Chen, Yansheng Du, Jiadi Liu, Antonio Facchetti, and Deng Zhang. These collaborations have fostered interdisciplinary research outputs linking various engineering domains.

The primary publication venues where Chen's work appears repeatedly include:

  • Journal of Building Engineering
  • SSRN Electronic Journal
  • Thin-Walled Structures
  • Structures
  • Journal of Constructional Steel Research

Zhihua Chen's research addresses engineering challenges with an emphasis on optimizing building energy consumption, structural performance, and integration of advanced computational methods. This multidisciplinary approach is supported by a substantial body of work in related scientific journals and collaborations with other experts in the field.

Best Publications

  • A high-mobility electron-transporting polymer for printed transistors

    He Yan;Zhihua Chen;Yan Zheng;Christopher Newman

  • Naphthalenedicarboximide- vs Perylenedicarboximide-Based Copolymers. Synthesis and Semiconducting Properties in Bottom-Gate N-Channel Organic Transistors

    Zhihua Chen;Yan Zheng;He Yan;Antonio Facchetti

  • Aggregation in a high-mobility n-type low-bandgap copolymer with implications on semicrystalline morphology.

    Robert Steyrleuthner;Marcel Schubert;Ian Howard;Bastian Klaumünzer

  • Unconventional face-on texture and exceptional in-plane order of a high mobility n-type polymer.

    Jonathan Rivnay;Michael F. Toney;Yan Zheng;Isaac V. Kauvar

  • Influence of Aggregation on the Performance of All-Polymer Solar Cells Containing Low-Bandgap Naphthalenediimide Copolymers

    Marcel Schubert;Daniel Dolfen;Johannes Frisch;Steffen Roland

  • Drastic Control of Texture in a High Performance n-Type Polymeric Semiconductor and Implications for Charge Transport

    Jonathan Rivnay;Robert Steyrleuthner;Leslie H. Jimison;Alberto Casadei

  • Macroscopic and high-throughput printing of aligned nanostructured polymer semiconductors for MHz large-area electronics.

    Sadir G. Bucella;Sadir G. Bucella;Alessandro Luzio;Eliot Gann;Lars Thomsen

  • Defective Carbon-Based Materials for the Electrochemical Synthesis of Hydrogen Peroxide

    Shucheng Chen;Zhihua Chen;Samira Siahrostami;Taeho Roy Kim

  • Band‐Like Electron Transport in Organic Transistors and Implication of the Molecular Structure for Performance Optimization

    Nikolas Aron Minder;Shimpei Ono;Shimpei Ono;Zhihua Chen;Antonio Facchetti

  • All-Polymer Solar Cell Performance Optimized via Systematic Molecular Weight Tuning of Both Donor and Acceptor Polymers

    Nanjia Zhou;Alexander S. Dudnik;Ting I N G Li;Eric F. Manley

  • Heavily n-Dopable π-Conjugated Redox Polymers with Ultrafast Energy Storage Capability

    Yanliang Liang;Zhihua Chen;Yan Jing;Yaoguang Rong

  • Combining electron-neutral building blocks with intramolecular "conformational locks" affords stable, high-mobility p- and n-channel polymer semiconductors.

    Hui Huang;Zhihua Chen;Rocio Ponce Ortiz;Rocio Ponce Ortiz;Christopher Newman

  • The role of regioregularity, crystallinity, and chain orientation on electron transport in a high-mobility n-type copolymer.

    Robert Steyrleuthner;Riccardo Di Pietro;Brian A. Collins;Frank Polzer

  • High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors

    Anna S. Molinari;Helena Alves;Zhihua Chen;Antonio Facchetti

  • High‐Efficiency All‐Polymer Solar Cells Based on a Pair of Crystalline Low‐Bandgap Polymers

    Cheng Mu;Peng Liu;Wei Ma;Kui Jiang

  • Dialkoxybithiazole: a new building block for head-to-head polymer semiconductors.

    Xugang Guo;Jordan Quinn;Zhihua Chen;Hakan Usta

  • Very Low Degree of Energetic Disorder as the Origin of High Mobility in an n-channel Polymer Semiconductor

    Mario Caironi;Matt Bird;Daniele Fazzi;Zhihua Chen

  • A Chemically Doped Naphthalenediimide-Bithiazole Polymer for n-Type Organic Thermoelectrics

    Suhao Wang;Hengda Sun;Tim Erdmann;Tim Erdmann;Gang Wang

  • Bulk Electron Transport and Charge Injection in a High Mobility n‐Type Semiconducting Polymer

    Robert Steyrleuthner;Marcel Schubert;Frank Jaiser;James C. Blakesley

  • Role of photoactive layer morphology in high fill factor all-polymer bulk heterojunction solar cells

    Simone Fabiano;Zhihua Chen;Sina Vahedi;Antonio Facchetti

Frequent Co-Authors

Antonio Facchetti
Antonio Facchetti Northwestern University
Tobin J. Marks
Tobin J. Marks Northwestern University
Simone Fabiano
Simone Fabiano Linköping University
He Yan
He Yan Hong Kong University of Science and Technology
Dieter Neher
Dieter Neher University of Potsdam
Maria Antonietta Loi
Maria Antonietta Loi University of Groningen
Alberto F. Morpurgo
Alberto F. Morpurgo University of Geneva
Chris Newman
Chris Newman University of Oxford
Alberto Salleo
Alberto Salleo Stanford University
Lin X. Chen
Lin X. Chen Northwestern University

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