World's Best Scientists 2026 revealed!
Alberto F. Morpurgo

Alberto F. Morpurgo

D-Index & Metrics

Materials Science

D-Index
84
Citations
32689
World Ranking
2221
National Ranking
36

Physics

D-Index
85
Citations
33792
World Ranking
2572
National Ranking
59

Overview

Alberto F. Morpurgo is affiliated with the University of Geneva in Switzerland. Their research primarily focuses on Materials Science, with extensive work in the subfields of Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, as well as General Health Professions.

The main topics covered in Morpurgo's research include:

  • 2D Materials and Applications
  • Graphene research and applications
  • MXene and MAX Phase Materials
  • Electronic and Structural Properties of Oxides
  • Quantum and electron transport phenomena
  • Organic and Molecular Conductors Research
  • Hermeneutics and Narrative Identity

Morpurgo has published frequently in several scientific venues, including:

  • arXiv (Cornell University)
  • Nature Communications
  • Nano Letters
  • Advanced Materials
  • Physical Review Research

Recent papers authored by Morpurgo include:

  • Persistence of Magnetism in Atomically Thin MnPS3 Crystals, 2020, Nano Letters
  • Quasi-1D Electronic Transport in a 2D Magnetic Semiconductor, 2022, Advanced Materials
  • Dynamic Magnetic Crossover at the Origin of the Hidden-Order in van der Waals Antiferromagnet CrSBr, 2022, arXiv (Cornell University)
  • Quenching the bandgap of two-dimensional semiconductors with a perpendicular electric field, 2022, Nature Nanotechnology
  • Gate-Controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D Magnetic Semiconductor CrPS4, 2023, Advanced Materials

The scientist collaborates frequently with several coauthors, including:

  • Ignacio Gutiérrez-Lezama
  • Marco Gibertini
  • Nicolas Ubrig
  • Takashi Taniguchi
  • Kenji Watanabe

Best Publications

  • Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

    Andrea C. Ferrari;Francesco Bonaccorso;Francesco Bonaccorso;Vladimir Fal'ko;Konstantin S. Novoselov

  • Gate-induced insulating state in bilayer graphene devices

    Jeroen B. Oostinga;Hubert B. Heersche;Xinglan Liu;Alberto F. Morpurgo

  • Bipolar supercurrent in graphene

    Hubert B. Heersche;Pablo Jarillo-Herrero;Jeroen B. Oostinga;Lieven M. K. Vandersypen

  • Magnetic 2D materials and heterostructures.

    M. Gibertini;M. Gibertini;M. Koperski;A. F. Morpurgo;K. S. Novoselov

  • Organic single-crystal field-effect transistors

    R. W.I. De Boer;Michael Gershenson;A. F. Morpurgo;Vitaly Podzorov

  • Very large tunneling magnetoresistance in layered magnetic semiconductor CrI 3 .

    Zhe Wang;Ignacio Gutiérrez-Lezama;Nicolas Ubrig;Martin Kroner

  • Colloquium : Electronic transport in single-crystal organic transistors

    M.E. Gershenson;V. Podzorov;Alberto Morpurgo

  • Electrostatic modification of novel materials

    C. H. Ahn;A. Bhattacharya;M. Di Ventra;J. N. Eckstein

  • Tunable Fröhlich polarons in organic single-crystal transistors

    Iulian N. Hulea;Simone Fratini;H. Xie;Cornelis L. Mulder

  • Trilayer graphene is a semimetal with a gate-tunable band overlap.

    M. F. Craciun;S. Russo;S. Russo;M. Yamamoto;Jeroen Bart Oostinga;Jeroen Bart Oostinga

  • Topological confinement in bilayer graphene

    Ivar Martin;Yaroslav Blanter;Alberto Morpurgo

  • Integrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubes

    Hyongsok T. Soh;Calvin F. Quate;Alberto F. Morpurgo;Charles M. Marcus

  • Mono- and Bilayer WS2 Light-Emitting Transistors

    Sanghyun Jo;Nicolas Ubrig;Helmuth Berger;Alexey B. Kuzmenko

  • Quantitative determination of the band gap of WS2 with ambipolar ionic liquid-gated transistors.

    Daniele Braga;Ignacio Gutiérrez Lezama;Helmuth Berger;Alberto F. Morpurgo

  • Intervalley Scattering, Long-Range Disorder, and Effective Time-Reversal Symmetry Breaking in Graphene

    Alberto Morpurgo;F. Guinea

  • Controlled fabrication of metallic electrodes with atomic separation

    Alberto Morpurgo;C. M. Marcus;D. B. Robinson

  • Strong interface-induced spin-orbit interaction in graphene on WS2.

    Zhe Wang;Dong–Keun Ki;Hua Chen;Helmuth Berger

  • Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe 2

    Ignacio Gutiérrez Lezama;Ashish Arora;Alberto Ubaldini;Céline Barreteau

  • Very Large Tunneling Magnetoresistance in Layered Magnetic Semiconductor CrI$_3$

    Zhe Wang;Ignacio Gutiérrez-Lezama;Nicolas Ubrig;Martin Kroner

  • Reversing the direction of the supercurrent in a controllable Josephson junction

    J. J. A. Baselmans;Alberto Morpurgo;Alberto Morpurgo;B. J. van Wees;T. M. Klapwijk

  • Metallic conduction at organic charge-transfer interfaces

    H. Dias Alves;A. S. Molinari;H. Xie;A. F. Morpurgo

Frequent Co-Authors

Saverio Russo
Saverio Russo University of Exeter
Yoshihiro Iwasa
Yoshihiro Iwasa University of Tokyo
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Jean-Marc Triscone
Jean-Marc Triscone University of Geneva
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Seigo Tarucha
Seigo Tarucha University of Tokyo
Antonio Facchetti
Antonio Facchetti Northwestern University
Charles Marcus
Charles Marcus University of Copenhagen
Zhihua Chen
Zhihua Chen Northwestern University
Leo P. Kouwenhoven
Leo P. Kouwenhoven Delft University of Technology

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Alberto F. Morpurgo

Trending Scientists

Recently Published Articles