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Electronics and Electrical Engineering

D-Index
31
Citations
4712
World Ranking
6516
National Ranking
2133

Overview

Dragica Vasileska is affiliated with Arizona State University in the United States. Their research focuses on several key areas within engineering and physics, particularly in electrical and electronic engineering as well as atomic and molecular physics and optics. The main concentration of their work lies in semiconductor materials and devices, with significant contributions to advancements in semiconductor devices and circuit design.

Their research spans several specialized topics, including:

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Silicon Carbide Semiconductor Technologies
  • Semiconductor Quantum Structures and Devices
  • Thin-Film Transistor Technologies
  • GaN-based semiconductor devices and materials
  • Semiconductor materials and interfaces

Most of Dragica Vasileska's publications appear in well-known scientific journals, with frequent contributions to the following venues:

  • IEEE Transactions on Electron Devices
  • Journal of Computational Electronics
  • Journal of Applied Physics
  • Journal of Integrated Circuits and Systems
  • ACS Omega

Their recent journal papers include:

  • GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD, 2020, IEEE Transactions on Electron Devices
  • Spatial profiles of photon chemical potential in near-field thermophotovoltaic cells, 2021, Journal of Applied Physics
  • Cryogenic Characterization and Analysis of Nanoscale SOI FETs Using a Virtual Source Model, 2022, IEEE Transactions on Electron Devices
  • Impact of Back-Gate Biasing on the Transport Properties of 22 nm FD-SOI MOSFETs at Cryogenic Temperatures, 2022, IEEE Transactions on Electron Devices
  • Statistical analysis of the impact of charge traps in p-type MOSFETs via particle-based Monte Carlo device simulations, 2020, Journal of Computational Electronics

The scientist frequently collaborates with several colleagues, including:

  • Gilson Wirth
  • Alan C. J. Rossetto
  • Stephen M. Goodnick
  • Vinícius Valduga de Almeida Camargo
  • Atreyo Mukherjee

Dragica Vasileska's scholarly output predominantly lies within the fields of engineering and physics and astronomy, contributing a substantial number of publications to the domain of electrical and electronic engineering and related subfields. This body of work supports ongoing research in semiconductor technology and device engineering at the intersection of materials science and applied physics.

Best Publications

  • On the performance limits for Si MOSFETs: a theoretical study

    F. Assad;Zhibin Ren;D. Vasileska;S. Datta

  • Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation

    Dragica Vasileska;Stephen M. Goodnick;Gerhard Klimeck

  • Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering

    E. B. Ramayya;Dragica Vasileska;Stephen Goodnick;I. Knezevic

  • Lead-Orientation-Dependent Wave Function Scarring in Open Quantum Dots

    J. P. Bird;R. Akis;D. K. Ferry;Dragica Vasileska

  • Modeling Thermal Effects in Nanodevices

    K. Raleva;D. Vasileska;S.M. Goodnick;M. Nedjalkov

  • A novel approach for introducing the electron-electron and electron-impurity interactions in particle-based simulations

    W.J. Gross;D. Vasileska;D.K. Ferry

  • Quantum effects in MOSFETs: use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices

    D.K. Ferry;R. Akis;D. Vasileska

  • Scaled silicon MOSFETs: degradation of the total gate capacitance

    D. Vasileska;D.K. Schroder;D.K. Ferry

  • Electron Mobility in Silicon Nanowires

    E.B. Ramayya;D. Vasileska;S.M. Goodnick;I. Knezevic

  • Contact block reduction method for ballistic transport and carrier densities of open nanostructures

    D. Mamaluy;Dragica Vasileska;M. Sabathil;T. Zibold

  • Ultrasmall MOSFETs: the importance of the full Coulomb interaction on device characteristics

    W.J. Gross;D. Vasileska;D.K. Ferry

  • Quantum Transport Simulation of Experimentally Fabricated Nano-FinFET

    H.R. Khan;D. Mamaluy;D. Vasileska

  • Narrow-width SOI devices: the role of quantum-mechanical size quantization effect and unintentional doping on the device operation

    D. Vasileska;S.S. Ahmed

  • Scaled silicon MOSFET's: universal mobility behavior

    D. Vasileska;D.K. Ferry

  • Self-Heating Effects in Nanoscale FD SOI Devices: The Role of the Substrate, Boundary Conditions at Various Interfaces, and the Dielectric Material Type for the BOX

    D. Vasileska;K. Raleva;S.M. Goodnick

  • An ensemble Monte Carlo study of high-field transport in β-SiC

    K. Tsukioka;Dragica Vasileska;D. K. Ferry

  • Modeling of deep-submicrometer MOSFETs: random impurity effects, threshold voltage shifts and gate capacitance attenuation

    D. Vasileska;W.J. Gross;W.J. Gross;D.K. Ferry

  • Semiconductor Device Modeling

    Dragica Vasileska;D. Mamaluy;H. R. Khan;K. Raleva

  • High Field Transport

    Dragica Vasileska

  • Computational Electronics

    Unknown

  • Modeling heating effects in nanoscale devices: the present and the future

    Dragica Vasileska;K. Raleva;Stephen Goodnick

  • Experimental validation of self-heating simulations and projections for transistors in deeply scaled nodes

    E. Bury;B. Kaczer;P. Roussel;R. Ritzenthaler

  • Modeling thermal effects in nano-devices

    Dragica Vasileska

Frequent Co-Authors

Gerhard Klimeck
Gerhard Klimeck Purdue University West Lafayette
Yoshinobu Aoyagi
Yoshinobu Aoyagi Ritsumeikan University
Yong-Hang Zhang
Yong-Hang Zhang Arizona State University
Mark Lundstrom
Mark Lundstrom Purdue University West Lafayette
Alexander A. Demkov
Alexander A. Demkov The University of Texas at Austin
Ajeet Rohatgi
Ajeet Rohatgi Georgia Institute of Technology
Shui-Qing Yu
Shui-Qing Yu University of Arkansas at Fayetteville

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