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Yong-Hang Zhang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Yong-Hang Zhang sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

The last bar groups every scientist with 1,065 publications or more.

Yong-Hang Zhang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Yong-Hang Zhang sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

The last bar groups every scientist with 111 D-Index or more.

Overview

Yong-Hang Zhang is affiliated with Arizona State University in the United States, focusing on research that intersects engineering, materials science, and physics and astronomy. Their work primarily explores various areas within electrical and electronic engineering, materials chemistry, atomic and molecular physics, optics, inorganic chemistry, and condensed matter physics.

The scientist's research topics include:

  • Chalcogenide Semiconductor Thin Films
  • Photonic and Optical Devices
  • Inorganic Chemistry and Materials
  • Advanced Semiconductor Detectors and Materials
  • Quantum Dots Synthesis and Properties
  • Boron and Carbon Nanomaterials Research
  • Advanced Photonic Communication Systems

Recent publications by Yong-Hang Zhang and collaborators reflect their focus on semiconductor lasers and novel semiconductor structures. These include:

  • "Electrically injected GeSn lasers on Si operating up to 100 K" (2020), published in Optica
  • "Electrically injected GeSn lasers with peak wavelength up to 2.7 μm" (2021), published in Photonics Research
  • "Heterovalent semiconductor structures and devices grown by molecular beam epitaxy" (2021), published in Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • "Momentum(k)-space carrier separation using SiGeSn alloys for photodetector applications" (2021), published in Journal of Applied Physics
  • "Pentagonal bipyramid-shaped REGe6− (RE = Sc, Y, La, Ce, Pr, Nd, Pm, Sm, and Eu) clusters with adjustable magnetic moments" (2023), published in Chemical Physics

Yong-Hang Zhang regularly publishes in several scientific journals and conferences, notably:

  • Journal of Applied Physics
  • Solar RRL
  • Physics Letters A
  • Applied Physics Letters
  • Conference on Lasers and Electro-Optics

The scientist frequently collaborates with colleagues including Huifang Li, Hao Zheng, Huai-Qian Wang, Jiaming Zhang, and Zheng Ju. These collaborations have resulted in multiple joint publications, reflecting a sustained research network in materials and electronic engineering.

Best Publications

  • Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

    E. H. Steenbergen;B. C. Connelly;G. D. Metcalfe;H. Shen

  • Monocrystalline CdTe solar cells with open-circuit voltage over 1 V and efficiency of 17%

    Yuan Zhao;Mathieu Boccard;Shi Liu;Jacob Becker

  • Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

    Huong Tran;Huong Tran;Thach Pham;Thach Pham;Joe Margetis;Yiyin Zhou;Yiyin Zhou

  • Electrically injected GeSn lasers on Si operating up to 100 K

    Yiyin Zhou;Yuanhao Miao;Solomon Ojo;Huong Tran

  • Structural and optical properties of self‐assembled InGaAs quantum dots

    D. Leonard;S. Fafard;K. Pond;Y. H. Zhang

  • Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

    H. S. Kim;O. O. Cellek;Zhi Yuan Lin;Zhao Yu He

  • CONTINUOUS WAVE OPERATION OF INAS/INASXSB1-X MIDINFRARED LASERS

    Yong Hang Zhang

  • Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

    R. Leon;G. M. Swift;B. Magness;W. A. Taylor

  • Mid‐wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices

    D. H. Chow;R. H. Miles;T. C. Hasenberg;A. R. Kost

  • Tunable optical gratings based on buckled nanoscale thin films on transparent elastomeric substrates

    Cunjiang Yu;Kevin O’Brien;Yong-Hang Zhang;Hongbin Yu

  • Midwave infrared stimulated emission from a GaInSb/InAs superlattice

    R. H. Miles;D. H. Chow;Y.‐H. Zhang;P. D. Brewer

  • Simultaneous Enhancement of Electrical Conductivity and Thermopower of Bi 2 Te 3 by Multifunctionality of Native Defects

    Joonki Suh;Joonki Suh;Kin Man Yu;Kin Man Yu;Deyi Fu;Deyi Fu;Xinyu Liu

  • Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

    Xinyu Liu;D. J. Smith;Jin Fan;Yong-Hang Zhang

  • Pressure-dependent photoluminescence study of ZnO nanowires

    W. Shan;W. Walukiewicz;J. W. Ager;K. M. Yu

  • Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy

    P. T. Webster;N. A. Riordan;S. Liu;E. H. Steenbergen

  • Luminescence coupling effects on multijunction solar cell external quantum efficiency measurement

    Swee Hoe Lim;Jing Jing Li;Elizabeth H. Steenbergen;Yong-Hang Zhang

  • Band edge alignment of pseudomorphic GaAs1-ySby on GaAs

    J.-B. Wang;S. R. Johnson;S. A. Chaparro;Ding Ding

  • Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy

    Michael J. DiNezza;Xin Hao Zhao;Shi Liu;Alexander P. Kirk

  • A semi-analytical model for semiconductor solar cells

    Ding Ding;Shane R. Johnson;S.-Q. Yu;S.-Q. Yu;S.-N. Wu;S.-N. Wu

  • Si-based GeSn photodetectors towards mid-infrared imaging applications

    Huong Tran;Thach Pham;Joe Margetis;Yiyin Zhou

Frequent Co-Authors

Shui-Qing Yu
Shui-Qing Yu University of Arkansas at Fayetteville
Jacek K. Furdyna
Jacek K. Furdyna University of Notre Dame
Martha R. McCartney
Martha R. McCartney Arizona State University
Richard A. Soref
Richard A. Soref University of Massachusetts Boston
Greg Sun
Greg Sun University of Massachusetts Boston
Jifeng Liu
Jifeng Liu Dartmouth College
Russell D. Dupuis
Russell D. Dupuis Georgia Institute of Technology
Angelo Mascarenhas
Angelo Mascarenhas National Renewable Energy Laboratory
Yong Zhang
Yong Zhang University of North Carolina at Charlotte
John Tolle
John Tolle Arizona State University

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