World's Best Scientists 2026 revealed!

Overview

Yong-Hang Zhang is affiliated with Arizona State University in the United States, focusing on research that intersects engineering, materials science, and physics and astronomy. Their work primarily explores various areas within electrical and electronic engineering, materials chemistry, atomic and molecular physics, optics, inorganic chemistry, and condensed matter physics.

The scientist's research topics include:

  • Chalcogenide Semiconductor Thin Films
  • Photonic and Optical Devices
  • Inorganic Chemistry and Materials
  • Advanced Semiconductor Detectors and Materials
  • Quantum Dots Synthesis and Properties
  • Boron and Carbon Nanomaterials Research
  • Advanced Photonic Communication Systems

Recent publications by Yong-Hang Zhang and collaborators reflect their focus on semiconductor lasers and novel semiconductor structures. These include:

  • "Electrically injected GeSn lasers on Si operating up to 100 K" (2020), published in Optica
  • "Electrically injected GeSn lasers with peak wavelength up to 2.7 μm" (2021), published in Photonics Research
  • "Heterovalent semiconductor structures and devices grown by molecular beam epitaxy" (2021), published in Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • "Momentum(k)-space carrier separation using SiGeSn alloys for photodetector applications" (2021), published in Journal of Applied Physics
  • "Pentagonal bipyramid-shaped REGe6− (RE = Sc, Y, La, Ce, Pr, Nd, Pm, Sm, and Eu) clusters with adjustable magnetic moments" (2023), published in Chemical Physics

Yong-Hang Zhang regularly publishes in several scientific journals and conferences, notably:

  • Journal of Applied Physics
  • Solar RRL
  • Physics Letters A
  • Applied Physics Letters
  • Conference on Lasers and Electro-Optics

The scientist frequently collaborates with colleagues including Huifang Li, Hao Zheng, Huai-Qian Wang, Jiaming Zhang, and Zheng Ju. These collaborations have resulted in multiple joint publications, reflecting a sustained research network in materials and electronic engineering.

Best Publications

  • Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

    E. H. Steenbergen;B. C. Connelly;G. D. Metcalfe;H. Shen

  • Monocrystalline CdTe solar cells with open-circuit voltage over 1 V and efficiency of 17%

    Yuan Zhao;Mathieu Boccard;Shi Liu;Jacob Becker

  • Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

    Huong Tran;Huong Tran;Thach Pham;Thach Pham;Joe Margetis;Yiyin Zhou;Yiyin Zhou

  • Electrically injected GeSn lasers on Si operating up to 100 K

    Yiyin Zhou;Yuanhao Miao;Solomon Ojo;Huong Tran

  • Structural and optical properties of self‐assembled InGaAs quantum dots

    D. Leonard;S. Fafard;K. Pond;Y. H. Zhang

  • Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

    H. S. Kim;O. O. Cellek;Zhi Yuan Lin;Zhao Yu He

  • CONTINUOUS WAVE OPERATION OF INAS/INASXSB1-X MIDINFRARED LASERS

    Yong Hang Zhang

  • Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

    R. Leon;G. M. Swift;B. Magness;W. A. Taylor

  • Mid‐wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices

    D. H. Chow;R. H. Miles;T. C. Hasenberg;A. R. Kost

  • Tunable optical gratings based on buckled nanoscale thin films on transparent elastomeric substrates

    Cunjiang Yu;Kevin O’Brien;Yong-Hang Zhang;Hongbin Yu

  • Midwave infrared stimulated emission from a GaInSb/InAs superlattice

    R. H. Miles;D. H. Chow;Y.‐H. Zhang;P. D. Brewer

  • Simultaneous Enhancement of Electrical Conductivity and Thermopower of Bi 2 Te 3 by Multifunctionality of Native Defects

    Joonki Suh;Joonki Suh;Kin Man Yu;Kin Man Yu;Deyi Fu;Deyi Fu;Xinyu Liu

  • Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

    Xinyu Liu;D. J. Smith;Jin Fan;Yong-Hang Zhang

  • Pressure-dependent photoluminescence study of ZnO nanowires

    W. Shan;W. Walukiewicz;J. W. Ager;K. M. Yu

  • Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy

    P. T. Webster;N. A. Riordan;S. Liu;E. H. Steenbergen

  • Luminescence coupling effects on multijunction solar cell external quantum efficiency measurement

    Swee Hoe Lim;Jing Jing Li;Elizabeth H. Steenbergen;Yong-Hang Zhang

  • Band edge alignment of pseudomorphic GaAs1-ySby on GaAs

    J.-B. Wang;S. R. Johnson;S. A. Chaparro;Ding Ding

  • Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy

    Michael J. DiNezza;Xin Hao Zhao;Shi Liu;Alexander P. Kirk

  • A semi-analytical model for semiconductor solar cells

    Ding Ding;Shane R. Johnson;S.-Q. Yu;S.-Q. Yu;S.-N. Wu;S.-N. Wu

  • Si-based GeSn photodetectors towards mid-infrared imaging applications

    Huong Tran;Thach Pham;Joe Margetis;Yiyin Zhou

Frequent Co-Authors

Shui-Qing Yu
Shui-Qing Yu University of Arkansas at Fayetteville
Jacek K. Furdyna
Jacek K. Furdyna University of Notre Dame
Martha R. McCartney
Martha R. McCartney Arizona State University
Richard A. Soref
Richard A. Soref University of Massachusetts Boston
Greg Sun
Greg Sun University of Massachusetts Boston
Jifeng Liu
Jifeng Liu Dartmouth College
Russell D. Dupuis
Russell D. Dupuis Georgia Institute of Technology
Angelo Mascarenhas
Angelo Mascarenhas National Renewable Energy Laboratory
Yong Zhang
Yong Zhang University of North Carolina at Charlotte
John Tolle
John Tolle Arizona State University

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