World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
30
Citations
2799
World Ranking
6869
National Ranking
988

Jiangnan Dai publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jiangnan Dai sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 131 publications — 9th percentile

9% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Jiangnan Dai D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jiangnan Dai sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 30 D-Index — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Jiangnan Dai is affiliated with Huazhong University of Science and Technology in China. Their research spans materials science, engineering, and physics and astronomy, demonstrating a multidisciplinary approach to advanced material technologies.

Their primary fields of study include:

  • Materials Science
  • Engineering
  • Physics and Astronomy

Their work extends into specialized subfields such as materials chemistry, electrical and electronic engineering, electronic, optical and magnetic materials, condensed matter physics, and biomedical engineering.

Jiangnan Dai's research topics focus extensively on:

  • Ga2O3 and related materials
  • GaN-based semiconductor devices and materials
  • ZnO doping and properties
  • 2D Materials and Applications
  • Perovskite Materials and Applications
  • Advanced Fiber Laser Technologies
  • MXene and MAX Phase Materials

Their recent publications include:

  • Integrating 2D layered materials with 3D bulk materials as van der Waals heterostructures for photodetections: Current status and perspectives, 2023, InfoMat
  • Room-Temperature Blackbody-Sensitive and Fast Infrared Photodetectors Based on 2D Tellurium/Graphene Van der Waals Heterojunction, 2022, ACS Photonics
  • Polarization-engineered AlGaN last quantum barrier for efficient deep-ultraviolet light-emitting diodes, 2020, Semiconductor Science and Technology
  • Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors, 2020, Applied Physics Letters
  • Photolithography allows high-Q AlN microresonators for near octave-spanning frequency comb and harmonic generation, 2020, Optics Express

Jiangnan Dai has published multiple papers in the following venues:

  • SSRN Electronic Journal
  • Optics Letters
  • ACS Applied Materials & Interfaces
  • ACS Photonics
  • Optics Express

Frequent collaborators in their research include Feng Wu, Changqing Chen, Zhihua Zheng, Pengcheng Jian, and Yongming Zhao, indicating ongoing partnerships across various projects and publications.

Best Publications

  • Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition.

    Meng Peng;Meng Peng;Runzhang Xie;Zhen Wang;Peng Wang

  • Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array

    Hongpo Hu;Bin Tang;Hui Wan;Haiding Sun

  • Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate

    Haiding Sun;Somak Mitra;Ram Chandra Subedi;Yi Zhang

  • High-performance AlGaN metal–semiconductor–metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement

    Wei Zhang;Jin Xu;Wei Ye;Yang Li

  • Room-Temperature Blackbody-Sensitive and Fast Infrared Photodetectors Based on 2D Tellurium/Graphene Van der Waals Heterojunction

    Unknown

  • Tungsten Oxide Nanofibers Self-assembled Mesoscopic Microspheres as High-performance Electrodes for Supercapacitor

    Juan Xu;Taotao Ding;Jin Wang;Jun Zhang

  • Controlled synthesis of ZnO hollow microspheres via precursor-template method and its gas sensing property

    Yu Tian;Jinchai Li;Hui Xiong;Jiangnan Dai

  • Ultrahigh Degree of Optical Polarization above 80% in AlGaN-Based Deep-Ultraviolet LED with Moth-Eye Microstructure

    Shuai Wang;Jiangnan Dai;Jiahui Hu;Shuang Zhang

  • Directly accessing octave-spanning dissipative Kerr soliton frequency combs in an AlN microresonator

    Haizhong Weng;Jia Liu;Adnan Ali Afridi;Jing Li

  • Fabrication of phosphor glass film on aluminum plate by using lead-free tellurite glass for laser-driven white lighting

    Hao Wang;Yun Mou;Yang Peng;Yi Zhang

  • Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design

    Feng Wu;Feng Wu;Haiding Sun;Idris A AJia;Iman S Roqan

  • Advantages of AlGaN-Based 310-nm UV Light-Emitting Diodes With Al Content Graded AlGaN Electron Blocking Layers

    Yang Li;Shengchang Chen;Wu Tian;Zhihao Wu

  • Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier.

    Huabin Yu;Zhongjie Ren;Haochen Zhang;Jiangnan Dai

  • SnO 2 epitaxial films with varying thickness on c -sapphire: Structure evolution and optical band gap modulation

    Mi Zhang;Maji Xu;Mingkai Li;Qingfeng Zhang

  • High quality 10.6 μm AlN grown on pyramidal patterned sapphire substrate by MOCVD

    Hanling Long;Jiangnan Dai;Yi Zhang;Shuai Wang

  • Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure

    Huabin Yu;Qian Chen;Zhongjie Ren;Meng Tian

  • High Light Extraction Efficiency of Deep Ultraviolet LEDs Enhanced Using Nanolens Arrays

    Renli Liang;Jiangnan Dai;Linlin Xu;Ju He

  • Progress and Perspective of Near-Ultraviolet and Deep-Ultraviolet Light-Emitting Diode Packaging Technologies

    Yang Peng;Renli Liang;Yun Mou;Jiangnan Dai

  • Polarization-engineered AlGaN last quantum barrier for efficient deep-ultraviolet light-emitting diodes

    Zhongling Liu;Huabin Yu;Zhongjie Ren;Jiangnan Dai

  • Internal strain induced significant enhancement of deep ultraviolet light extraction efficiency for AlGaN multiple quantum wells grown by MOCVD.

    Hanling Long;Shuai Wang;Jiangnan Dai;Feng Wu

  • III-Nitride Deep UV LED Without Electron Blocking Layer

    Zhongjie Ren;Yi Lu;Hsin-Hung Yao;Haiding Sun

  • Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells

    Jun Yin;Yang Li;Shengchang Chen;Jing Li

  • Enhanced the Optical Power of AlGaN-Based Deep Ultraviolet Light-Emitting Diode by Optimizing Mesa Sidewall Angle

    Qian Chen;Huixue Zhang;Jiangnan Dai;Shuang Zhang

  • Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes by using staggered quantum wells

    Min Zhang;Yang Li;Shengchang Chen;Wu Tian

  • Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors

    Ying-Zhe Wang;Xue-Feng Zheng;Jia-Duo Zhu;Lin-Lin Xu

  • Light-extraction enhancement of GaN-based 395 nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode

    Jin Xu;Wei Zhang;Meng Peng;Jiangnan Dai

  • Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on Al x Ga 1−x N templates

    Hanling Long;Feng Wu;Jun Zhang;Shuai Wang

Frequent Co-Authors

Wei Zhang
Wei Zhang University of Connecticut
John F. Donegan
John F. Donegan Trinity College Dublin
Hao-Chung Kuo
Hao-Chung Kuo National Yang Ming Chiao Tung University
Yihua Gao
Yihua Gao Huazhong University of Science and Technology
Lei Ye
Lei Ye Lund University
Yunbin He
Yunbin He Hubei University
Wei-Xue Li
Wei-Xue Li University of Science and Technology of China
Jichun Ye
Jichun Ye Chinese Academy of Sciences
Shibing Long
Shibing Long University of Science and Technology of China
Iman S. Roqan
Iman S. Roqan King Abdullah University of Science and Technology

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