World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
30
Citations
2799
World Ranking
6870
National Ranking
987

Overview

Jiangnan Dai is affiliated with Huazhong University of Science and Technology in China. Their research spans materials science, engineering, and physics and astronomy, demonstrating a multidisciplinary approach to advanced material technologies.

Their primary fields of study include:

  • Materials Science
  • Engineering
  • Physics and Astronomy

Their work extends into specialized subfields such as materials chemistry, electrical and electronic engineering, electronic, optical and magnetic materials, condensed matter physics, and biomedical engineering.

Jiangnan Dai's research topics focus extensively on:

  • Ga2O3 and related materials
  • GaN-based semiconductor devices and materials
  • ZnO doping and properties
  • 2D Materials and Applications
  • Perovskite Materials and Applications
  • Advanced Fiber Laser Technologies
  • MXene and MAX Phase Materials

Their recent publications include:

  • Integrating 2D layered materials with 3D bulk materials as van der Waals heterostructures for photodetections: Current status and perspectives, 2023, InfoMat
  • Room-Temperature Blackbody-Sensitive and Fast Infrared Photodetectors Based on 2D Tellurium/Graphene Van der Waals Heterojunction, 2022, ACS Photonics
  • Polarization-engineered AlGaN last quantum barrier for efficient deep-ultraviolet light-emitting diodes, 2020, Semiconductor Science and Technology
  • Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors, 2020, Applied Physics Letters
  • Photolithography allows high-Q AlN microresonators for near octave-spanning frequency comb and harmonic generation, 2020, Optics Express

Jiangnan Dai has published multiple papers in the following venues:

  • SSRN Electronic Journal
  • Optics Letters
  • ACS Applied Materials & Interfaces
  • ACS Photonics
  • Optics Express

Frequent collaborators in their research include Feng Wu, Changqing Chen, Zhihua Zheng, Pengcheng Jian, and Yongming Zhao, indicating ongoing partnerships across various projects and publications.

Best Publications

  • Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition.

    Meng Peng;Meng Peng;Runzhang Xie;Zhen Wang;Peng Wang

  • Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array

    Hongpo Hu;Bin Tang;Hui Wan;Haiding Sun

  • Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate

    Haiding Sun;Somak Mitra;Ram Chandra Subedi;Yi Zhang

  • High-performance AlGaN metal–semiconductor–metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement

    Wei Zhang;Jin Xu;Wei Ye;Yang Li

  • Room-Temperature Blackbody-Sensitive and Fast Infrared Photodetectors Based on 2D Tellurium/Graphene Van der Waals Heterojunction

    Unknown

  • Tungsten Oxide Nanofibers Self-assembled Mesoscopic Microspheres as High-performance Electrodes for Supercapacitor

    Juan Xu;Taotao Ding;Jin Wang;Jun Zhang

  • Controlled synthesis of ZnO hollow microspheres via precursor-template method and its gas sensing property

    Yu Tian;Jinchai Li;Hui Xiong;Jiangnan Dai

  • Ultrahigh Degree of Optical Polarization above 80% in AlGaN-Based Deep-Ultraviolet LED with Moth-Eye Microstructure

    Shuai Wang;Jiangnan Dai;Jiahui Hu;Shuang Zhang

  • Directly accessing octave-spanning dissipative Kerr soliton frequency combs in an AlN microresonator

    Haizhong Weng;Jia Liu;Adnan Ali Afridi;Jing Li

  • Fabrication of phosphor glass film on aluminum plate by using lead-free tellurite glass for laser-driven white lighting

    Hao Wang;Yun Mou;Yang Peng;Yi Zhang

  • Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design

    Feng Wu;Feng Wu;Haiding Sun;Idris A AJia;Iman S Roqan

  • Advantages of AlGaN-Based 310-nm UV Light-Emitting Diodes With Al Content Graded AlGaN Electron Blocking Layers

    Yang Li;Shengchang Chen;Wu Tian;Zhihao Wu

  • Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier.

    Huabin Yu;Zhongjie Ren;Haochen Zhang;Jiangnan Dai

  • SnO 2 epitaxial films with varying thickness on c -sapphire: Structure evolution and optical band gap modulation

    Mi Zhang;Maji Xu;Mingkai Li;Qingfeng Zhang

  • High quality 10.6 μm AlN grown on pyramidal patterned sapphire substrate by MOCVD

    Hanling Long;Jiangnan Dai;Yi Zhang;Shuai Wang

  • Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure

    Huabin Yu;Qian Chen;Zhongjie Ren;Meng Tian

  • High Light Extraction Efficiency of Deep Ultraviolet LEDs Enhanced Using Nanolens Arrays

    Renli Liang;Jiangnan Dai;Linlin Xu;Ju He

  • Progress and Perspective of Near-Ultraviolet and Deep-Ultraviolet Light-Emitting Diode Packaging Technologies

    Yang Peng;Renli Liang;Yun Mou;Jiangnan Dai

  • Polarization-engineered AlGaN last quantum barrier for efficient deep-ultraviolet light-emitting diodes

    Zhongling Liu;Huabin Yu;Zhongjie Ren;Jiangnan Dai

  • Internal strain induced significant enhancement of deep ultraviolet light extraction efficiency for AlGaN multiple quantum wells grown by MOCVD.

    Hanling Long;Shuai Wang;Jiangnan Dai;Feng Wu

  • III-Nitride Deep UV LED Without Electron Blocking Layer

    Zhongjie Ren;Yi Lu;Hsin-Hung Yao;Haiding Sun

  • Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells

    Jun Yin;Yang Li;Shengchang Chen;Jing Li

  • Enhanced the Optical Power of AlGaN-Based Deep Ultraviolet Light-Emitting Diode by Optimizing Mesa Sidewall Angle

    Qian Chen;Huixue Zhang;Jiangnan Dai;Shuang Zhang

  • Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes by using staggered quantum wells

    Min Zhang;Yang Li;Shengchang Chen;Wu Tian

  • Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors

    Ying-Zhe Wang;Xue-Feng Zheng;Jia-Duo Zhu;Lin-Lin Xu

  • Light-extraction enhancement of GaN-based 395 nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode

    Jin Xu;Wei Zhang;Meng Peng;Jiangnan Dai

  • Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on Al x Ga 1−x N templates

    Hanling Long;Feng Wu;Jun Zhang;Shuai Wang

Frequent Co-Authors

John F. Donegan
John F. Donegan Trinity College Dublin
Hao-Chung Kuo
Hao-Chung Kuo National Yang Ming Chiao Tung University
Yihua Gao
Yihua Gao Huazhong University of Science and Technology
Yunbin He
Yunbin He Hubei University
Shibing Long
Shibing Long University of Science and Technology of China
Jichun Ye
Jichun Ye Chinese Academy of Sciences
Junyong Kang
Junyong Kang Xiamen University
Weida Hu
Weida Hu Chinese Academy of Sciences
Kaifu Huo
Kaifu Huo Wuhan University of Science and Technology
Iman S. Roqan
Iman S. Roqan King Abdullah University of Science and Technology

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