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Engineering and Technology

D-Index
38
Citations
6835
World Ranking
7968
National Ranking
2190

Overview

Theeradetch Detchprohm is affiliated with the Georgia Institute of Technology in the United States and has an extensive research profile primarily focused on semiconductor devices and materials. Their work is concentrated in the fields of Physics and Astronomy, Engineering, and Materials Science, with notable contributions to subfields such as Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Biomedical Engineering, Electrical and Electronic Engineering, and Mechanics of Materials.

Theeradetch's research explores various main topics including GaN-based semiconductor devices and materials, Ga2O3 and related materials, Photocathodes and Microchannel Plates, Metal and Thin Film Mechanics, Semiconductor Quantum Structures and Devices, Advanced Optical Sensing Technologies, and Silicon Carbide Semiconductor Technologies.

They have published research in several key scientific journals, with frequent publications in:

  • IEEE Transactions on Electron Devices
  • Journal of Crystal Growth
  • Journal of Applied Physics
  • Journal of Electronic Materials
  • Applied Physics Letters

Among their recent papers are:

  • "Effective Leakage Current Reduction in GaN Ultraviolet Avalanche Photodiodes With an Ion-Implantation Isolation Method," 2021, IEEE Transactions on Electron Devices
  • "Breakdown characteristics of deep-ultraviolet Al0.6Ga0.4N p-i-n avalanche photodiodes," 2022, Journal of Applied Physics
  • "1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings," 2023, IEEE Transactions on Electron Devices
  • "Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape," 2020, Journal of Materials Chemistry C
  • "Low Leakage and High Gain GaN p-i-n Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window," 2024, IEEE Transactions on Electron Devices

Theeradetch has collaborated extensively with other researchers in related fields. Frequent co-authors include:

  • Russell D. Dupuis
  • Shyh-Chiang Shen
  • Zhiyu Xu
  • Minkyu Cho
  • Marzieh Bakhtiary-Noodeh

Best Publications

  • Schottky barrier on n‐type GaN grown by hydride vapor phase epitaxy

    P. Hacke;T. Detchprohm;K. Hiramatsu;N. Sawaki

  • Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain

    Theeradetch Detchprohm;Kazumasa Hiramatsu;Kenji Itoh;Isamu Akasaki

  • Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

    T. Detchprohm;K. Hiramatsu;H. Amano;I. Akasaki

  • Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy

    Kazumasa Hiramatsu;Theeradetch Detchprohm;Isamu Akasaki

  • Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire

    Yufeng Li;Shi You;Mingwei Zhu;Liang Zhao

  • Exciton fine structure in undoped GaN epitaxial films.

    D Volm;K Oettinger;T Streibl;D Kovalev

  • Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN

    M. Drechsler;D. M. Hofmann;B. K. Meyer;T. Detchprohm

  • Shallow donors in GaN—The binding energy and the electron effective mass

    B.K. Meyer;D. Volm;A. Graber;H.C. Alt

  • Deep levels in the upper band-gap region of lightly Mg-doped GaN

    P. Hacke;H. Nakayama;T. Detchprohm;K. Hiramatsu

  • Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes

    Cyril Pernot;Akira Hirano;Motoaki Iwaya;Theeradetch Detchprohm

  • Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

    Z. Li;J. Waldron;T. Detchprohm;C. Wetzel

  • The growth of thick GaN film on sapphire substrate by using ZnO buffer layer

    T. Detchprohm;H. Amano;K. Hiramatsu;I. Akasaki

  • Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers

    J. Baur;K. Maier;M. Kunzer;U. Kaufmann

  • Electrical Transport Properties of p-GaN

    Hisashi Nakayama;Peter Hacke;Mohammad Rezaul Huque Khan;Theeradetch Detchprohm

  • Green light emitting diodes on a-plane GaN bulk substrates

    Theeradetch Detchprohm;Mingwei Zhu;Yufeng Li;Yong Xia

  • GaInN∕GaN growth optimization for high-power green light-emitting diodes

    C. Wetzel;T. Salagaj;T. Detchprohm;P. Li

  • Rethinking phonons: The issue of disorder

    Hamid Reza Seyf;Luke Yates;Thomas L. Bougher;Samuel Graham

  • Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

    Xiao-Hang Li;Theeradetch Detchprohm;Tsung-Ting Kao;Md. Mahbub Satter

  • The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates

    T. Detchprohm;K. Hiramatsu;N. Sawaki;I. Akasaki

  • Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates

    Theeradetch Detchprohm;Mingwei Zhu;Yufeng Li;Liang Zhao

  • Demonstration of Flame Detection in Room Light Background by Solar‐Blind AlGaN PIN Photodiode

    A. Hirano;C. Pernot;M. Iwaya;T. Detchprohm

Frequent Co-Authors

Russell D. Dupuis
Russell D. Dupuis Georgia Institute of Technology
isamu akasaki
isamu akasaki Meijo University
Hiroshi Amano
Hiroshi Amano Nagoya University
Kazumasa Hiramatsu
Kazumasa Hiramatsu Mie University
Fernando Ponce
Fernando Ponce Arizona State University
Jae-Hyun Ryou
Jae-Hyun Ryou University of Houston
Nobuhiko Sawaki
Nobuhiko Sawaki Aichi Institute of Technology
Motoaki Iwaya
Motoaki Iwaya Meijo University
Bruno K. Meyer
Bruno K. Meyer University of Giessen
Axel Hoffmann
Axel Hoffmann University of Illinois at Urbana-Champaign

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