World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
38
Citations
6835
World Ranking
7970
National Ranking
2191

Theeradetch Detchprohm publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Theeradetch Detchprohm sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 239 publications — 61st percentile

61% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Theeradetch Detchprohm D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Theeradetch Detchprohm sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 38 D-Index — 20th percentile

20% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Theeradetch Detchprohm is affiliated with the Georgia Institute of Technology in the United States and has an extensive research profile primarily focused on semiconductor devices and materials. Their work is concentrated in the fields of Physics and Astronomy, Engineering, and Materials Science, with notable contributions to subfields such as Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Biomedical Engineering, Electrical and Electronic Engineering, and Mechanics of Materials.

Theeradetch's research explores various main topics including GaN-based semiconductor devices and materials, Ga2O3 and related materials, Photocathodes and Microchannel Plates, Metal and Thin Film Mechanics, Semiconductor Quantum Structures and Devices, Advanced Optical Sensing Technologies, and Silicon Carbide Semiconductor Technologies.

They have published research in several key scientific journals, with frequent publications in:

  • IEEE Transactions on Electron Devices
  • Journal of Crystal Growth
  • Journal of Applied Physics
  • Journal of Electronic Materials
  • Applied Physics Letters

Among their recent papers are:

  • "Effective Leakage Current Reduction in GaN Ultraviolet Avalanche Photodiodes With an Ion-Implantation Isolation Method," 2021, IEEE Transactions on Electron Devices
  • "Breakdown characteristics of deep-ultraviolet Al0.6Ga0.4N p-i-n avalanche photodiodes," 2022, Journal of Applied Physics
  • "1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings," 2023, IEEE Transactions on Electron Devices
  • "Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape," 2020, Journal of Materials Chemistry C
  • "Low Leakage and High Gain GaN p-i-n Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window," 2024, IEEE Transactions on Electron Devices

Theeradetch has collaborated extensively with other researchers in related fields. Frequent co-authors include:

  • Russell D. Dupuis
  • Shyh-Chiang Shen
  • Zhiyu Xu
  • Minkyu Cho
  • Marzieh Bakhtiary-Noodeh

Best Publications

  • Schottky barrier on n‐type GaN grown by hydride vapor phase epitaxy

    P. Hacke;T. Detchprohm;K. Hiramatsu;N. Sawaki

  • Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain

    Theeradetch Detchprohm;Kazumasa Hiramatsu;Kenji Itoh;Isamu Akasaki

  • Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

    T. Detchprohm;K. Hiramatsu;H. Amano;I. Akasaki

  • Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy

    Kazumasa Hiramatsu;Theeradetch Detchprohm;Isamu Akasaki

  • Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire

    Yufeng Li;Shi You;Mingwei Zhu;Liang Zhao

  • Exciton fine structure in undoped GaN epitaxial films.

    D Volm;K Oettinger;T Streibl;D Kovalev

  • Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN

    M. Drechsler;D. M. Hofmann;B. K. Meyer;T. Detchprohm

  • Shallow donors in GaN—The binding energy and the electron effective mass

    B.K. Meyer;D. Volm;A. Graber;H.C. Alt

  • Deep levels in the upper band-gap region of lightly Mg-doped GaN

    P. Hacke;H. Nakayama;T. Detchprohm;K. Hiramatsu

  • Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes

    Cyril Pernot;Akira Hirano;Motoaki Iwaya;Theeradetch Detchprohm

  • Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

    Z. Li;J. Waldron;T. Detchprohm;C. Wetzel

  • The growth of thick GaN film on sapphire substrate by using ZnO buffer layer

    T. Detchprohm;H. Amano;K. Hiramatsu;I. Akasaki

  • Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers

    J. Baur;K. Maier;M. Kunzer;U. Kaufmann

  • Electrical Transport Properties of p-GaN

    Hisashi Nakayama;Peter Hacke;Mohammad Rezaul Huque Khan;Theeradetch Detchprohm

  • Green light emitting diodes on a-plane GaN bulk substrates

    Theeradetch Detchprohm;Mingwei Zhu;Yufeng Li;Yong Xia

  • GaInN∕GaN growth optimization for high-power green light-emitting diodes

    C. Wetzel;T. Salagaj;T. Detchprohm;P. Li

  • Rethinking phonons: The issue of disorder

    Hamid Reza Seyf;Luke Yates;Thomas L. Bougher;Samuel Graham

  • Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

    Xiao-Hang Li;Theeradetch Detchprohm;Tsung-Ting Kao;Md. Mahbub Satter

  • The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates

    T. Detchprohm;K. Hiramatsu;N. Sawaki;I. Akasaki

  • Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates

    Theeradetch Detchprohm;Mingwei Zhu;Yufeng Li;Liang Zhao

  • Demonstration of Flame Detection in Room Light Background by Solar‐Blind AlGaN PIN Photodiode

    A. Hirano;C. Pernot;M. Iwaya;T. Detchprohm

Frequent Co-Authors

Russell D. Dupuis
Russell D. Dupuis Georgia Institute of Technology
isamu akasaki
isamu akasaki Meijo University
Hiroshi Amano
Hiroshi Amano Nagoya University
Kazumasa Hiramatsu
Kazumasa Hiramatsu Mie University
Fernando Ponce
Fernando Ponce Arizona State University
Jae-Hyun Ryou
Jae-Hyun Ryou University of Houston
Nobuhiko Sawaki
Nobuhiko Sawaki Aichi Institute of Technology
Motoaki Iwaya
Motoaki Iwaya Meijo University
Bruno K. Meyer
Bruno K. Meyer University of Giessen
Axel Hoffmann
Axel Hoffmann University of Illinois at Urbana-Champaign

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