H-Index & Metrics Top Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Materials Science H-index 43 Citations 7,224 76 World Ranking 7688 National Ranking 2051

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Light-emitting diode
  • Optoelectronics

Arpan Chakraborty mainly investigates Optoelectronics, High-electron-mobility transistor, Wide-bandgap semiconductor, Transistor and Metalorganic vapour phase epitaxy. Optoelectronics is a component of his Diode and Light-emitting diode studies. His High-electron-mobility transistor research includes elements of Gallium nitride, Transconductance, Breakdown voltage and Power density.

The various areas that Arpan Chakraborty examines in his Wide-bandgap semiconductor study include Algan gan and High voltage. In his study, Analytical chemistry, Access resistance and Biasing is inextricably linked to Linearity, which falls within the broad field of Transistor. His Metalorganic vapour phase epitaxy research is multidisciplinary, relying on both Crystallography, Chemical vapor deposition, Photoluminescence and Diffraction.

His most cited work include:

  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. (542 citations)
  • High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates (354 citations)
  • AlGaN/GaN high electron mobility transistors with InGaN back-barriers (340 citations)

What are the main themes of his work throughout his whole career to date?

His primary scientific interests are in Optoelectronics, Wide-bandgap semiconductor, Light-emitting diode, High-electron-mobility transistor and Diode. Arpan Chakraborty has included themes like Gallium nitride, Power density, Epitaxy, Quantum well and Transistor in his Optoelectronics study. While the research belongs to areas of Wide-bandgap semiconductor, Arpan Chakraborty spends his time largely on the problem of Photoluminescence, intersecting his research to questions surrounding Cathodoluminescence, Exciton and Radiative transfer.

His research integrates issues of Wavelength, Metalorganic vapour phase epitaxy, Chemical vapor deposition, Electroluminescence and Ultraviolet in his study of Light-emitting diode. His High-electron-mobility transistor study also includes fields such as

  • Breakdown voltage which is related to area like Passivation and High voltage,
  • Ohmic contact which connect with Contact resistance. He works mostly in the field of Diode, limiting it down to concerns involving Equivalent series resistance and, occasionally, Wafer.

He most often published in these fields:

  • Optoelectronics (75.58%)
  • Wide-bandgap semiconductor (34.88%)
  • Light-emitting diode (26.74%)

What were the highlights of his more recent work (between 2009-2021)?

  • Optoelectronics (75.58%)
  • Light-emitting diode (26.74%)
  • Epitaxy (18.60%)

In recent papers he was focusing on the following fields of study:

His primary areas of investigation include Optoelectronics, Light-emitting diode, Epitaxy, Diode and Gallium. Arpan Chakraborty studies Wavelength range which is a part of Optoelectronics. His Light-emitting diode study combines topics in areas such as Radiation, Wavelength, Gallium nitride and Ultraviolet.

His Diode study combines topics from a wide range of disciplines, such as Wide-bandgap semiconductor, Radiative transfer and Active layer. His Wide-bandgap semiconductor research includes themes of Stacking fault, Current crowding, Partial dislocations, Surface roughness and Quantum efficiency. His Substrate research is multidisciplinary, incorporating perspectives in Metalorganic vapour phase epitaxy, Indium nitride and Chemical vapor deposition.

Between 2009 and 2021, his most popular works were:

  • Bulk GaN based violet light-emitting diodes with high efficiency at very high current density (105 citations)
  • Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices (95 citations)
  • Tapered Horizontal Growth Chamber (88 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Light-emitting diode
  • Laser

His scientific interests lie mostly in Optoelectronics, Light-emitting diode, Epitaxy, Susceptor and Composite material. His is involved in several facets of Optoelectronics study, as is seen by his studies on Quantum efficiency and Wide-bandgap semiconductor. His work deals with themes such as Wavelength, Radiation, Ultraviolet and Phosphor, which intersect with Light-emitting diode.

The study incorporates disciplines such as Substrate and Total thickness in addition to Epitaxy. His work deals with themes such as Wafer and Deposition, which intersect with Susceptor.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Top Publications

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell.
Nature Materials (2006)

717 Citations

High-power AlGaN/GaN HEMTs for Ka-band applications

T. Palacios;A. Chakraborty;S. Rajan;C. Poblenz.
IEEE Electron Device Letters (2005)

455 Citations

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

Y. Dora;A. Chakraborty;L. McCarthy;S. Keller.
IEEE Electron Device Letters (2006)

431 Citations

AlGaN/GaN high electron mobility transistors with InGaN back-barriers

T. Palacios;A. Chakraborty;S. Heikman;S. Keller.
IEEE Electron Device Letters (2006)

416 Citations

Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak

Arpan Chakraborty;B. A. Haskell;S. Keller;J. S. Speck.
Applied Physics Letters (2004)

319 Citations

Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates

Arpan Chakraborty;Benjamin A. Haskell;Stacia Keller;James S. Speck.
Japanese Journal of Applied Physics (2005)

314 Citations

Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates

Anurag Tyagi;Feng Wu;Erin C. Young;Arpan Chakraborty.
Applied Physics Letters (2009)

190 Citations

Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition

M. D. Craven;F. Wu;A. Chakraborty;B. Imer.
Applied Physics Letters (2004)

180 Citations

Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs

T. Palacios;S. Rajan;A. Chakraborty;S. Heikman.
IEEE Transactions on Electron Devices (2005)

179 Citations

Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask

Arpan Chakraborty;K. C. Kim;F. Wu;J. S. Speck.
Applied Physics Letters (2006)

174 Citations

Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking h-index is inferred from publications deemed to belong to the considered discipline.

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