World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
44
Citations
7741
World Ranking
12027
National Ranking
2783

Engineering and Technology

D-Index
44
Citations
7741
World Ranking
5800
National Ranking
1624

Arpan Chakraborty publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Arpan Chakraborty sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 87 publications — 5th percentile

5% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Arpan Chakraborty D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Arpan Chakraborty sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 44 D-Index — 42nd percentile

42% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Arpan Chakraborty is affiliated with Apple in the United States and specializes in research spanning physics, materials science, and related subfields. Their work largely focuses on atomic and molecular physics, optics, materials chemistry, and aspects of organic chemistry, oncology, and psychiatry and mental health. The research output of Chakraborty primarily explores topics such as graphene research and applications, topological materials and phenomena, 2D materials and applications, quantum optics and atomic interactions, cold atom physics and Bose-Einstein condensates, quantum mechanics and non-Hermitian physics, and cancer immunotherapy and biomarkers.

Chakraborty has contributed studies published in various academic venues, with a particular emphasis on the following:

  • arXiv (Cornell University)
  • Physical Review B
  • Nature Communications
  • Heliyon
  • Journal of Applied Pharmaceutical Research

Recent publications demonstrate a focus on two-dimensional materials and Dirac semimetals. Notable papers include:

  • "Realization of a two-dimensional Weyl semimetal and topological Fermi strings," 2024, Nature Communications
  • "Frequency-dependent Faraday and Kerr rotation in anisotropic nonsymmorphic Dirac semimetals," 2023, arXiv (Cornell University)
  • "Photon absorption of two-dimensional nonsymmorphic Dirac semimetals," 2022, Physical Review B
  • "Frequency-dependent Faraday and Kerr rotation in anisotropic nonsymmorphic Dirac semimetals," 2023, Physical Review B
  • "Observation of 2D Weyl Fermion States in Epitaxial Bismuthene," 2023, arXiv (Cornell University)

The research collaborations of Chakraborty reflect engagements with several co-authors, often contributing multiple times alongside them. Frequent collaborators include:

  • Giovanni Vignale
  • Guang Bian
  • Qiangsheng Lu
  • P. Venugopal Reddy
  • Hoyeon Jeon

The body of work by Chakraborty exhibits a steady contribution to interdisciplinary fields bridging experimental and theoretical physics, with particular attention to novel quantum and topological phenomena in emerging two-dimensional materials.

Best Publications

  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

    Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell

  • High-power AlGaN/GaN HEMTs for Ka-band applications

    T. Palacios;A. Chakraborty;S. Rajan;C. Poblenz

  • High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

    Y. Dora;A. Chakraborty;L. McCarthy;S. Keller

  • AlGaN/GaN high electron mobility transistors with InGaN back-barriers

    T. Palacios;A. Chakraborty;S. Heikman;S. Keller

  • Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates

    Arpan Chakraborty;Benjamin A. Haskell;Stacia Keller;James S. Speck

  • Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak

    Arpan Chakraborty;B. A. Haskell;S. Keller;J. S. Speck

  • Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates

    Anurag Tyagi;Feng Wu;Erin C. Young;Arpan Chakraborty

  • Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs

    T. Palacios;S. Rajan;A. Chakraborty;S. Heikman

  • High-performance E-mode AlGaN/GaN HEMTs

    T. Palacios;C.-S. Suh;A. Chakraborty;S. Keller

  • Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition

    M. D. Craven;F. Wu;A. Chakraborty;B. Imer

  • Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask

    Arpan Chakraborty;K. C. Kim;F. Wu;J. S. Speck

  • High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

    L. Shen;R. Coffie;D. Buttari;S. Heikman

  • Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy

    Benjamin A. Haskell;Arpan Chakraborty;Feng Wu;Hideo Sasano

  • Bulk GaN based violet light-emitting diodes with high efficiency at very high current density

    Michael J. Cich;Rafael I. Aldaz;Arpan Chakraborty;Aurelien David

  • Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates

    Arpan Chakraborty;Troy J. Baker;Benjamin A. Haskell;Feng Wu

  • Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices

    James Raring;Arpan Chakraborty;Christiane Poblenz

  • The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs

    C. Sanabria;A. Chakraborty;Hongtao Xu;M.J. Rodwell

  • Tapered Horizontal Growth Chamber

    James W. Raring;Arpan Chakraborty;Mike Coulter

  • Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs

    A. Chini;D. Buttari;R. Coffie;L. Shen

  • Characterization of blue-green m-plane InGaN light emitting diodes

    You-Da Lin;Arpan Chakraborty;Stuart Brinkley;Hsun Chih Kuo

Frequent Co-Authors

Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
James S. Speck
James S. Speck University of California, Santa Barbara
Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
Stacia Keller
Stacia Keller University of California, Santa Barbara
Alessandro Chini
Alessandro Chini University of Modena and Reggio Emilia
Feng Wu
Feng Wu Huazhong University of Science and Technology
Kenji Fujito
Kenji Fujito Mitsubishi Chemical Corporation

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