Arpan Chakraborty mainly investigates Optoelectronics, High-electron-mobility transistor, Wide-bandgap semiconductor, Transistor and Metalorganic vapour phase epitaxy. Optoelectronics is a component of his Diode and Light-emitting diode studies. His High-electron-mobility transistor research includes elements of Gallium nitride, Transconductance, Breakdown voltage and Power density.
The various areas that Arpan Chakraborty examines in his Wide-bandgap semiconductor study include Algan gan and High voltage. In his study, Analytical chemistry, Access resistance and Biasing is inextricably linked to Linearity, which falls within the broad field of Transistor. His Metalorganic vapour phase epitaxy research is multidisciplinary, relying on both Crystallography, Chemical vapor deposition, Photoluminescence and Diffraction.
His primary scientific interests are in Optoelectronics, Wide-bandgap semiconductor, Light-emitting diode, High-electron-mobility transistor and Diode. Arpan Chakraborty has included themes like Gallium nitride, Power density, Epitaxy, Quantum well and Transistor in his Optoelectronics study. While the research belongs to areas of Wide-bandgap semiconductor, Arpan Chakraborty spends his time largely on the problem of Photoluminescence, intersecting his research to questions surrounding Cathodoluminescence, Exciton and Radiative transfer.
His research integrates issues of Wavelength, Metalorganic vapour phase epitaxy, Chemical vapor deposition, Electroluminescence and Ultraviolet in his study of Light-emitting diode. His High-electron-mobility transistor study also includes fields such as
His primary areas of investigation include Optoelectronics, Light-emitting diode, Epitaxy, Diode and Gallium. Arpan Chakraborty studies Wavelength range which is a part of Optoelectronics. His Light-emitting diode study combines topics in areas such as Radiation, Wavelength, Gallium nitride and Ultraviolet.
His Diode study combines topics from a wide range of disciplines, such as Wide-bandgap semiconductor, Radiative transfer and Active layer. His Wide-bandgap semiconductor research includes themes of Stacking fault, Current crowding, Partial dislocations, Surface roughness and Quantum efficiency. His Substrate research is multidisciplinary, incorporating perspectives in Metalorganic vapour phase epitaxy, Indium nitride and Chemical vapor deposition.
His scientific interests lie mostly in Optoelectronics, Light-emitting diode, Epitaxy, Susceptor and Composite material. His is involved in several facets of Optoelectronics study, as is seen by his studies on Quantum efficiency and Wide-bandgap semiconductor. His work deals with themes such as Wavelength, Radiation, Ultraviolet and Phosphor, which intersect with Light-emitting diode.
The study incorporates disciplines such as Substrate and Total thickness in addition to Epitaxy. His work deals with themes such as Wafer and Deposition, which intersect with Susceptor.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.
Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell.
Nature Materials (2006)
High-power AlGaN/GaN HEMTs for Ka-band applications
T. Palacios;A. Chakraborty;S. Rajan;C. Poblenz.
IEEE Electron Device Letters (2005)
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
Y. Dora;A. Chakraborty;L. McCarthy;S. Keller.
IEEE Electron Device Letters (2006)
AlGaN/GaN high electron mobility transistors with InGaN back-barriers
T. Palacios;A. Chakraborty;S. Heikman;S. Keller.
IEEE Electron Device Letters (2006)
Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
Arpan Chakraborty;Benjamin A. Haskell;Stacia Keller;James S. Speck.
Japanese Journal of Applied Physics (2005)
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
Arpan Chakraborty;B. A. Haskell;S. Keller;J. S. Speck.
Applied Physics Letters (2004)
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates
Anurag Tyagi;Feng Wu;Erin C. Young;Arpan Chakraborty.
Applied Physics Letters (2009)
Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition
M. D. Craven;F. Wu;A. Chakraborty;B. Imer.
Applied Physics Letters (2004)
Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask
Arpan Chakraborty;K. C. Kim;F. Wu;J. S. Speck.
Applied Physics Letters (2006)
High-performance E-mode AlGaN/GaN HEMTs
T. Palacios;C.-S. Suh;A. Chakraborty;S. Keller.
IEEE Electron Device Letters (2006)
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