World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
44
Citations
7741
World Ranking
12029
National Ranking
2786

Engineering and Technology

D-Index
44
Citations
7741
World Ranking
5798
National Ranking
1623

Overview

Arpan Chakraborty is affiliated with Apple in the United States and specializes in research spanning physics, materials science, and related subfields. Their work largely focuses on atomic and molecular physics, optics, materials chemistry, and aspects of organic chemistry, oncology, and psychiatry and mental health. The research output of Chakraborty primarily explores topics such as graphene research and applications, topological materials and phenomena, 2D materials and applications, quantum optics and atomic interactions, cold atom physics and Bose-Einstein condensates, quantum mechanics and non-Hermitian physics, and cancer immunotherapy and biomarkers.

Chakraborty has contributed studies published in various academic venues, with a particular emphasis on the following:

  • arXiv (Cornell University)
  • Physical Review B
  • Nature Communications
  • Heliyon
  • Journal of Applied Pharmaceutical Research

Recent publications demonstrate a focus on two-dimensional materials and Dirac semimetals. Notable papers include:

  • "Realization of a two-dimensional Weyl semimetal and topological Fermi strings," 2024, Nature Communications
  • "Frequency-dependent Faraday and Kerr rotation in anisotropic nonsymmorphic Dirac semimetals," 2023, arXiv (Cornell University)
  • "Photon absorption of two-dimensional nonsymmorphic Dirac semimetals," 2022, Physical Review B
  • "Frequency-dependent Faraday and Kerr rotation in anisotropic nonsymmorphic Dirac semimetals," 2023, Physical Review B
  • "Observation of 2D Weyl Fermion States in Epitaxial Bismuthene," 2023, arXiv (Cornell University)

The research collaborations of Chakraborty reflect engagements with several co-authors, often contributing multiple times alongside them. Frequent collaborators include:

  • Giovanni Vignale
  • Guang Bian
  • Qiangsheng Lu
  • P. Venugopal Reddy
  • Hoyeon Jeon

The body of work by Chakraborty exhibits a steady contribution to interdisciplinary fields bridging experimental and theoretical physics, with particular attention to novel quantum and topological phenomena in emerging two-dimensional materials.

Best Publications

  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

    Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell

  • High-power AlGaN/GaN HEMTs for Ka-band applications

    T. Palacios;A. Chakraborty;S. Rajan;C. Poblenz

  • High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

    Y. Dora;A. Chakraborty;L. McCarthy;S. Keller

  • AlGaN/GaN high electron mobility transistors with InGaN back-barriers

    T. Palacios;A. Chakraborty;S. Heikman;S. Keller

  • Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates

    Arpan Chakraborty;Benjamin A. Haskell;Stacia Keller;James S. Speck

  • Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak

    Arpan Chakraborty;B. A. Haskell;S. Keller;J. S. Speck

  • Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates

    Anurag Tyagi;Feng Wu;Erin C. Young;Arpan Chakraborty

  • Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs

    T. Palacios;S. Rajan;A. Chakraborty;S. Heikman

  • High-performance E-mode AlGaN/GaN HEMTs

    T. Palacios;C.-S. Suh;A. Chakraborty;S. Keller

  • Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition

    M. D. Craven;F. Wu;A. Chakraborty;B. Imer

  • Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask

    Arpan Chakraborty;K. C. Kim;F. Wu;J. S. Speck

  • High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

    L. Shen;R. Coffie;D. Buttari;S. Heikman

  • Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy

    Benjamin A. Haskell;Arpan Chakraborty;Feng Wu;Hideo Sasano

  • Bulk GaN based violet light-emitting diodes with high efficiency at very high current density

    Michael J. Cich;Rafael I. Aldaz;Arpan Chakraborty;Aurelien David

  • Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates

    Arpan Chakraborty;Troy J. Baker;Benjamin A. Haskell;Feng Wu

  • Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices

    James Raring;Arpan Chakraborty;Christiane Poblenz

  • The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs

    C. Sanabria;A. Chakraborty;Hongtao Xu;M.J. Rodwell

  • Tapered Horizontal Growth Chamber

    James W. Raring;Arpan Chakraborty;Mike Coulter

  • Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs

    A. Chini;D. Buttari;R. Coffie;L. Shen

  • Characterization of blue-green m-plane InGaN light emitting diodes

    You-Da Lin;Arpan Chakraborty;Stuart Brinkley;Hsun Chih Kuo

Frequent Co-Authors

Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
James S. Speck
James S. Speck University of California, Santa Barbara
Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
Stacia Keller
Stacia Keller University of California, Santa Barbara
Alessandro Chini
Alessandro Chini University of Modena and Reggio Emilia
Feng Wu
Feng Wu Huazhong University of Science and Technology
Kenji Fujito
Kenji Fujito Mitsubishi Chemical Corporation

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