World's Best Scientists 2026 revealed!
Yoshiji Horikoshi

Yoshiji Horikoshi

D-Index & Metrics

Materials Science

D-Index
51
Citations
9251
World Ranking
9918
National Ranking
601

Yoshiji Horikoshi publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Yoshiji Horikoshi sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 411 publications — 79th percentile

79% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Yoshiji Horikoshi D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Yoshiji Horikoshi sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 51 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Yoshiji Horikoshi is affiliated with Waseda University in Japan. Their academic and research career is connected primarily to this institution.

There is no available data on recent papers authored by Yoshiji Horikoshi, including titles, publication years, or venues. Similarly, there are no listed frequent co-authors associated with their work.

The scientist does not have recorded frequent publication venues, nor is there information on book publications or the publishers associated with their work.

Details regarding the main fields of study, subfields, and main topics of research are not provided. Likewise, there are no records of awards won, including their associated years or citations.

Yoshiji Horikoshi is currently living, with no indications to the contrary in the provided data.

Best Publications

  • Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy

    Yoshiji Horikoshi;Minoru Kawashima;Hiroshi Yamaguchi

  • Migration-Enhanced Epitaxy of GaAs and AlGaAs

    Yoshiji Horikoshi;Minoru Kawashima;Hiroshi Yamaguchi

  • Alloy broadening in photoluminescence spectra of Al x Ga 1-x As

    E. F. Schubert;E. O. Göbel;Y. Horikoshi;K. Ploog

  • Abrupt p‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy

    Naoki Kobayashi;Toshiki Makimoto;Yoshiji Horikoshi

  • Temperature Sensitive Threshold Current of InGaAsP-InP Double Heterostructure Lasers

    Yoshiji Horikoshi;Yoshitaka Furukawa

  • Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices

    Leon Goldstein;Yoshiji Horikoshi;Seigo Tarucha;Hiroshi Okamoto

  • Growth process of III–V compound semiconductors by migration-enhanced epitaxy

    Yoshiji Horikoshi;Hiroshi Yamaguchi;Fernando Briones;Minoru Kawashima

  • Semiconductor devices consisting of epitaxial material

    E. Schubert;Klaus Ploog;A. Fischer;Yoshiji Horikoshi

  • PROCEDE DE DEPOT DE FILMS MINCES SEMI-CONDUCTEURS COMPOSES III-V OU II-VI SUR UN SUBSTRAT PAR DECOMPOSITION THERMIQUE

    Kobayashi Naoki;Makimoto Toshiki;Horikoschi Yoshiji

  • Atomic configuration of the Er-O luminescence center in Er-doped GaAs with oxygen codoping

    K. Takahei;A. Taguchi;Y. Horikoshi;J. Nakata

  • Optical Investigation on the Growth Process of GaAs during Migration-Enhanced Epitaxy

    Naoki Kobayashi;Yoshiji Horikoshi

  • Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy

    Tomohiko Tatsumi;Miki Fujita;Noriaki Kawamoto;Masanori Sasajima

  • Surface structure transitions on InAs and GaAs (001) surfaces.

    Hiroshi Yamaguchi;Yoshiji Horikoshi

  • Flow-Rate Modulation Epitaxy of GaAs

    Naoki Kobayashi;Toshiki Makimoto;Yoshiji Horikoshi

  • ZnO MSM photodetectors with Ru contact electrodes

    T. K. Lin;Shoou-Jinn Chang;Yan-Kuin Su;B. R. Huang

  • Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures

    Seigo Tarucha;Hideki Kobayashi;Yoshiji Horikoshi;Hiroshi Okamoto

  • Phase transition in the ν=2 bilayer quantum hall state

    A. Sawada;Z. F. Ezawa;H. Ohno;Y. Horikoshi

  • Organometallic VPE Growth of InAs1-xSbx on InAs

    Takashi Fukui;Yoshiji Horikoshi

  • Migration-enhanced epitaxy of GaAs and AlGaAs

    Y Horikoshi

  • Low threading dislocation density GaAs on Si(100) with InGaAs/GaAs strained-layer superlattice grown by migration-enhanced epitaxy

    Kazuhiko Nozawa;Yoshiji Horikoshi

  • Organometallic VPE Growth of InAs 1-x Sb x on InAs

    Takashi Fukui;Yoshiji Horikoshi

  • Migration-enhanced epitaxy of GaAs and AlGaAs

    Yoshiji Horikoshi;Minoru Kawashima

Frequent Co-Authors

Toshiki Makimoto
Toshiki Makimoto Waseda University
Naoki Kobayashi
Naoki Kobayashi University of Electro-Communications
Naoki Kobayashi
Naoki Kobayashi University of Tokyo
Takashi Fukui
Takashi Fukui Hokkaido University
Shoou-Jinn Chang
Shoou-Jinn Chang National Cheng Kung University
Hideo Ohno
Hideo Ohno Tohoku University
Fumihiro Matsukura
Fumihiro Matsukura Tohoku University
Hiroshi Okamoto
Hiroshi Okamoto University of Tokyo
Seigo Tarucha
Seigo Tarucha University of Tokyo

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