Yoshiji Horikoshi spends much of his time researching Epitaxy, Optoelectronics, Photoluminescence, Molecular beam epitaxy and Analytical chemistry. His work carried out in the field of Epitaxy brings together such families of science as Crystallography, Crystal growth, Thin film, Electron diffraction and Substrate. His Optoelectronics study integrates concerns from other disciplines, such as Quantum well, Laser and Optics.
As part of the same scientific family, he usually focuses on Photoluminescence, concentrating on Spectral line and intersecting with Alloy. As part of one scientific family, Yoshiji Horikoshi deals mainly with the area of Molecular beam epitaxy, narrowing it down to issues related to the Molecular physics, and often Reflection high-energy electron diffraction. The Analytical chemistry study combines topics in areas such as Trimethylgallium, Triethylgallium, Oxygen and Diffraction.
Epitaxy, Optoelectronics, Condensed matter physics, Molecular beam epitaxy and Photoluminescence are his primary areas of study. His Epitaxy study combines topics from a wide range of disciplines, such as Crystallography, Crystal growth, Thin film, Analytical chemistry and Substrate. Yoshiji Horikoshi studies Optoelectronics, focusing on Heterojunction in particular.
His Condensed matter physics research is multidisciplinary, incorporating elements of Electron, Electron density and Hall effect. His study explores the link between Molecular beam epitaxy and topics such as Reflection high-energy electron diffraction that cross with problems in Monolayer. His Photoluminescence study incorporates themes from Luminescence, Exciton, Quantum well, Spectral line and Laser linewidth.
His primary scientific interests are in Optoelectronics, Epitaxy, Molecular beam epitaxy, Condensed matter physics and Analytical chemistry. His Optoelectronics research incorporates themes from Quantum well and Nanotechnology, Nanostructure. His work deals with themes such as Crystallography, Thin film, Transmission electron microscopy, Electron diffraction and Substrate, which intersect with Epitaxy.
His biological study deals with issues like Photoluminescence, which deal with fields such as Single crystal. His Condensed matter physics research includes themes of Hall effect and Magnetoresistance. The various areas that Yoshiji Horikoshi examines in his Analytical chemistry study include Saturation, Doping and Mineralogy.
Yoshiji Horikoshi focuses on Epitaxy, Molecular beam epitaxy, Optoelectronics, Crystallography and Condensed matter physics. The concepts of his Epitaxy study are interwoven with issues in Single crystal, Deposition, Analytical chemistry, Electron diffraction and Substrate. His studies deal with areas such as Photoluminescence and Optics as well as Molecular beam epitaxy.
Yoshiji Horikoshi mostly deals with Heterojunction in his studies of Optoelectronics. His work focuses on many connections between Crystallography and other disciplines, such as Layer, that overlap with his field of interest in Lattice constant and Aluminium nitride. The Condensed matter physics study which covers Semiconductor that intersects with Electron mobility, Thermal Hall effect, Magnetoresistance, Quantum Hall effect and Curie temperature.
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Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy
Yoshiji Horikoshi;Minoru Kawashima;Hiroshi Yamaguchi.
Japanese Journal of Applied Physics (1986)
Migration-Enhanced Epitaxy of GaAs and AlGaAs
Yoshiji Horikoshi;Minoru Kawashima;Hiroshi Yamaguchi.
Japanese Journal of Applied Physics (1988)
Alloy broadening in photoluminescence spectra of Al x Ga 1-x As
E. F. Schubert;E. O. Göbel;Y. Horikoshi;K. Ploog.
Physical Review B (1984)
Abrupt p‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy
Naoki Kobayashi;Toshiki Makimoto;Yoshiji Horikoshi.
Applied Physics Letters (1987)
Temperature Sensitive Threshold Current of InGaAsP-InP Double Heterostructure Lasers
Yoshiji Horikoshi;Yoshitaka Furukawa.
Japanese Journal of Applied Physics (1979)
Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices
Leon Goldstein;Yoshiji Horikoshi;Seigo Tarucha;Hiroshi Okamoto.
Japanese Journal of Applied Physics (1983)
Growth process of III–V compound semiconductors by migration-enhanced epitaxy
Yoshiji Horikoshi;Hiroshi Yamaguchi;Fernando Briones;Minoru Kawashima.
Journal of Crystal Growth (1990)
Semiconductor devices with at least one monoatomic layer of doping atoms
E. Schubert;Klaus Ploog;A. Fischer;Yoshiji Horikoshi.
(1985)
Atomic configuration of the Er-O luminescence center in Er-doped GaAs with oxygen codoping
K. Takahei;A. Taguchi;Y. Horikoshi;J. Nakata.
Journal of Applied Physics (1994)
Preparation process of compound semiconductor
Kobayashi Naoki;Makimoto Toshiki;Horikoschi Yoshiji.
(1986)
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