D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 45 Citations 7,230 354 World Ranking 8548 National Ranking 563

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

Yoshiji Horikoshi spends much of his time researching Epitaxy, Optoelectronics, Photoluminescence, Molecular beam epitaxy and Analytical chemistry. His work carried out in the field of Epitaxy brings together such families of science as Crystallography, Crystal growth, Thin film, Electron diffraction and Substrate. His Optoelectronics study integrates concerns from other disciplines, such as Quantum well, Laser and Optics.

As part of the same scientific family, he usually focuses on Photoluminescence, concentrating on Spectral line and intersecting with Alloy. As part of one scientific family, Yoshiji Horikoshi deals mainly with the area of Molecular beam epitaxy, narrowing it down to issues related to the Molecular physics, and often Reflection high-energy electron diffraction. The Analytical chemistry study combines topics in areas such as Trimethylgallium, Triethylgallium, Oxygen and Diffraction.

His most cited work include:

  • Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy (314 citations)
  • Migration-Enhanced Epitaxy of GaAs and AlGaAs (295 citations)
  • Alloy broadening in photoluminescence spectra of Al x Ga 1-x As (293 citations)

What are the main themes of his work throughout his whole career to date?

Epitaxy, Optoelectronics, Condensed matter physics, Molecular beam epitaxy and Photoluminescence are his primary areas of study. His Epitaxy study combines topics from a wide range of disciplines, such as Crystallography, Crystal growth, Thin film, Analytical chemistry and Substrate. Yoshiji Horikoshi studies Optoelectronics, focusing on Heterojunction in particular.

His Condensed matter physics research is multidisciplinary, incorporating elements of Electron, Electron density and Hall effect. His study explores the link between Molecular beam epitaxy and topics such as Reflection high-energy electron diffraction that cross with problems in Monolayer. His Photoluminescence study incorporates themes from Luminescence, Exciton, Quantum well, Spectral line and Laser linewidth.

He most often published in these fields:

  • Epitaxy (45.94%)
  • Optoelectronics (40.61%)
  • Condensed matter physics (25.38%)

What were the highlights of his more recent work (between 2006-2019)?

  • Optoelectronics (40.61%)
  • Epitaxy (45.94%)
  • Molecular beam epitaxy (25.38%)

In recent papers he was focusing on the following fields of study:

His primary scientific interests are in Optoelectronics, Epitaxy, Molecular beam epitaxy, Condensed matter physics and Analytical chemistry. His Optoelectronics research incorporates themes from Quantum well and Nanotechnology, Nanostructure. His work deals with themes such as Crystallography, Thin film, Transmission electron microscopy, Electron diffraction and Substrate, which intersect with Epitaxy.

His biological study deals with issues like Photoluminescence, which deal with fields such as Single crystal. His Condensed matter physics research includes themes of Hall effect and Magnetoresistance. The various areas that Yoshiji Horikoshi examines in his Analytical chemistry study include Saturation, Doping and Mineralogy.

Between 2006 and 2019, his most popular works were:

  • Anomalous hall effect in Mn δ-doped GaAs/In0.17Ga0.83As/GaAs quantum wells with high hole mobility (21 citations)
  • MBE growth of GaN on MgO substrate (15 citations)
  • ZnO epitaxial films grown by flux-modulated RF-MBE (15 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

Yoshiji Horikoshi focuses on Epitaxy, Molecular beam epitaxy, Optoelectronics, Crystallography and Condensed matter physics. The concepts of his Epitaxy study are interwoven with issues in Single crystal, Deposition, Analytical chemistry, Electron diffraction and Substrate. His studies deal with areas such as Photoluminescence and Optics as well as Molecular beam epitaxy.

Yoshiji Horikoshi mostly deals with Heterojunction in his studies of Optoelectronics. His work focuses on many connections between Crystallography and other disciplines, such as Layer, that overlap with his field of interest in Lattice constant and Aluminium nitride. The Condensed matter physics study which covers Semiconductor that intersects with Electron mobility, Thermal Hall effect, Magnetoresistance, Quantum Hall effect and Curie temperature.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy

Yoshiji Horikoshi;Minoru Kawashima;Hiroshi Yamaguchi.
Japanese Journal of Applied Physics (1986)

486 Citations

Migration-Enhanced Epitaxy of GaAs and AlGaAs

Yoshiji Horikoshi;Minoru Kawashima;Hiroshi Yamaguchi.
Japanese Journal of Applied Physics (1988)

455 Citations

Alloy broadening in photoluminescence spectra of Al x Ga 1-x As

E. F. Schubert;E. O. Göbel;Y. Horikoshi;K. Ploog.
Physical Review B (1984)

452 Citations

Abrupt p‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy

Naoki Kobayashi;Toshiki Makimoto;Yoshiji Horikoshi.
Applied Physics Letters (1987)

216 Citations

Temperature Sensitive Threshold Current of InGaAsP-InP Double Heterostructure Lasers

Yoshiji Horikoshi;Yoshitaka Furukawa.
Japanese Journal of Applied Physics (1979)

187 Citations

Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices

Leon Goldstein;Yoshiji Horikoshi;Seigo Tarucha;Hiroshi Okamoto.
Japanese Journal of Applied Physics (1983)

187 Citations

Growth process of III–V compound semiconductors by migration-enhanced epitaxy

Yoshiji Horikoshi;Hiroshi Yamaguchi;Fernando Briones;Minoru Kawashima.
Journal of Crystal Growth (1990)

183 Citations

Semiconductor devices with at least one monoatomic layer of doping atoms

E. Schubert;Klaus Ploog;A. Fischer;Yoshiji Horikoshi.
(1985)

169 Citations

Atomic configuration of the Er-O luminescence center in Er-doped GaAs with oxygen codoping

K. Takahei;A. Taguchi;Y. Horikoshi;J. Nakata.
Journal of Applied Physics (1994)

144 Citations

Preparation process of compound semiconductor

Kobayashi Naoki;Makimoto Toshiki;Horikoschi Yoshiji.
(1986)

142 Citations

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