World's Best Scientists 2026 revealed!
Takashi Fukui

Takashi Fukui

D-Index & Metrics

Materials Science

D-Index
63
Citations
13967
World Ranking
6189
National Ranking
309

Takashi Fukui publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Takashi Fukui sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 435 publications — 81st percentile

81% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Takashi Fukui D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Takashi Fukui sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 63 D-Index — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Takashi Fukui is affiliated with Hokkaido University in Japan and specializes primarily in the field of Engineering. Their research spans several subfields including Electrical and Electronic Engineering, Control and Systems Engineering, Artificial Intelligence, Surgery, and Mechanical Engineering.

Their work covers a range of topics with a focus on Anomaly Detection Techniques and Applications as well as Fault Detection and Control Systems. Additional areas of research include Nanowire Synthesis and Applications, Advancements in Semiconductor Devices and Circuit Design, Semiconductor Quantum Structures and Devices, Semiconductor materials and devices, and Carcinogens and Genotoxicity Assessment.

Takashi Fukui has published recent papers in various scientific venues. These include:

  • Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes, 2020, Scientific Reports
  • InGaAs-InP core-shell nanowire/Si junction for vertical tunnel field-effect transistor, 2020, Applied Physics Letters
  • Development of a genotoxicity/carcinogenicity assessment method by DNA adductome analysis, 2024, Mutation Research/Genetic Toxicology and Environmental Mutagenesis
  • Explainable symptom detection in telemetry of ISS with Random Forest and SpecTRM, 2022, 2022 IEEE Aerospace Conference (AERO)
  • Automation and Operation Record of Large Overhead Crane for Segment Transportation, 2020, Proceedings of the... ISARC

Frequently collaborating coauthors include Shota Iino, Hideki Nomoto, Yasutaka Michiura, Takayuki Hirose, and Sayaka Ishizawa.

Their publications have appeared in venues such as Scientific Reports, Applied Physics Letters, Mutation Research/Genetic Toxicology and Environmental Mutagenesis, the IEEE Aerospace Conference, and the Proceedings of the ISARC conference.

Best Publications

  • A III–V nanowire channel on silicon for high-performance vertical transistors

    Katsuhiro Tomioka;Katsuhiro Tomioka;Masatoshi Yoshimura;Takashi Fukui

  • Control of InAs Nanowire Growth Directions on Si

    Katsuhiro Tomioka;Junichi Motohisa;Shinjiroh Hara;Takashi Fukui

  • GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si

    Katsuhiro Tomioka;Junichi Motohisa;Shinjiroh Hara;Kenji Hiruma

  • Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy

    Jinichiro Noborisaka;Junichi Motohisa;Takashi Fukui

  • GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition

    T. Fukui;S. Ando;Y. Tokura;T. T. Toriyama

  • Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays

    Premila Mohan;Junichi Motohisa;Takashi Fukui

  • Single GaAs/GaAsP coaxial core-shell nanowire lasers.

    Bin Hua;Junichi Motohisa;Yasunori Kobayashi;Shinjiroh Hara

  • Self-organized growth of quantum-dot structures

    Richard Nötzel

  • Growth of Core–Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy

    Hajime Goto;Katsutoshi Nosaki;Katsuhiro Tomioka;Shinjiro Hara

  • Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy

    J. Noborisaka;J. Motohisa;S. Hara;T. Fukui

  • Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

    K. Kumakura;K. Kumakura;K. Kumakura;T. Makimoto;T. Makimoto;T. Makimoto;N. Kobayashi;N. Kobayashi;T. Hashizume

  • (AlAs)0.5(GaAs)0.5 fractional‐layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor deposition

    Takashi Fukui;Hisao Saito

  • Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates

    J. Motohisa;J. Noborisaka;J. Takeda;M. Inari

  • (AlAs)1/2(GaAs)1/2 fractional-layer superlattices grown on (001) vicinal GaAs substrates by metal-organic chemical vapor deposition

    Takashi Fukui;Hisao Saito

  • Fabrication of InP∕InAs∕InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy

    Premila Mohan;Junichi Motohisa;Takashi Fukui

  • Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate.

    Katsuhiro Tomioka;Yasunori Kobayashi;Junichi Motohisa;Shinjiroh Hara

  • Steep-slope tunnel field-effect transistors using III–V nanowire/Si heterojunction

    Katsuhiro Tomioka;Masatoshi Yoshimura;Takashi Fukui

  • III–V Nanowires on Si Substrate: Selective-Area Growth and Device Applications

    K. Tomioka;T. Tanaka;S. Hara;K. Hiruma

  • Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE

    Keitaro Ikejiri;Jinichiro Noborisaka;Shinjiroh Hara;Junichi Motohisa

  • Two-stage Kondo effect in a quantum dot at a high magnetic field.

    W. G. van der Wiel;S. De Franceschi;J. M. Elzerman;S. Tarucha

  • Growth of highly uniform InAs nanowire arrays by selective-area MOVPE

    K. Tomioka;P. Mohan;J. Noborisaka;S. Hara

Frequent Co-Authors

Junichi Motohisa
Junichi Motohisa Hokkaido University
Hideki Hasegawa
Hideki Hasegawa Hokkaido University
Yasuhiro Tokura
Yasuhiro Tokura University of Tsukuba
Yasuaki Masumoto
Yasuaki Masumoto University of Tsukuba
Toshiaki Tamamura
Toshiaki Tamamura NTT Electronics
Yoshiji Horikoshi
Yoshiji Horikoshi Waseda University
Jeremy J. Baumberg
Jeremy J. Baumberg University of Cambridge
R Richard Nötzel
R Richard Nötzel South China Normal University
Makoto Kasu
Makoto Kasu Saga University
Toshiki Makimoto
Toshiki Makimoto Waseda University

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