Epitaxy, Nanowire, Optoelectronics, Nanotechnology and Metalorganic vapour phase epitaxy are his primary areas of study. His work carried out in the field of Epitaxy brings together such families of science as Doping, Gallium arsenide, Vapor–liquid–solid method, Crystallography and Etching. His Nanowire research includes themes of Photoluminescence, Scanning electron microscope, Transmission electron microscopy, Amplified spontaneous emission and Wurtzite crystal structure.
Takashi Fukui does research in Optoelectronics, focusing on Heterojunction specifically. His Nanotechnology research is multidisciplinary, relying on both Voltage, Photovoltaic system, Phase and Energy conversion efficiency. His work in Metalorganic vapour phase epitaxy addresses subjects such as Chemical vapor deposition, which are connected to disciplines such as Substrate, Condensed matter physics, Facet, Monolayer and Dangling bond.
His primary areas of study are Optoelectronics, Epitaxy, Metalorganic vapour phase epitaxy, Nanowire and Nanotechnology. As part of the same scientific family, Takashi Fukui usually focuses on Optoelectronics, concentrating on Quantum well and intersecting with Quantum wire. His Epitaxy research includes elements of Substrate, Condensed matter physics, Gallium arsenide and Nanostructure.
His biological study spans a wide range of topics, including Vicinal, Crystallography, Transmission electron microscopy and Chemical vapor deposition. The study incorporates disciplines such as Crystal growth and Analytical chemistry in addition to Chemical vapor deposition. His Nanowire study incorporates themes from Indium phosphide, Field-effect transistor, Transistor, Subthreshold slope and Wurtzite crystal structure.
Takashi Fukui mainly investigates Nanowire, Optoelectronics, Epitaxy, Nanotechnology and Heterojunction. The concepts of his Nanowire study are interwoven with issues in Metalorganic vapour phase epitaxy, Photoluminescence, Semiconductor, Transistor and Wurtzite crystal structure. His Photoluminescence research is multidisciplinary, incorporating perspectives in Quantum well, Exciton, Condensed matter physics and Quantum dot.
His studies deal with areas such as Field-effect transistor, Subthreshold slope and Substrate as well as Optoelectronics. His Substrate research is multidisciplinary, incorporating elements of Optics and Dislocation. His research investigates the link between Epitaxy and topics such as Phase that cross with problems in Analytical chemistry.
Takashi Fukui focuses on Nanowire, Optoelectronics, Epitaxy, Heterojunction and Transistor. His Nanowire study is associated with Nanotechnology. His Optoelectronics study combines topics in areas such as Field-effect transistor, Passivation and Electrode.
Takashi Fukui is studying Metalorganic vapour phase epitaxy, which is a component of Epitaxy. As a part of the same scientific study, he usually deals with the Heterojunction, concentrating on Graphene and frequently concerns with Condensed matter physics, Double heterostructure, Polarity and Nucleation. The Transistor study combines topics in areas such as Diode and Silicon.
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A III–V nanowire channel on silicon for high-performance vertical transistors
Katsuhiro Tomioka;Katsuhiro Tomioka;Masatoshi Yoshimura;Takashi Fukui.
Control of InAs Nanowire Growth Directions on Si
Katsuhiro Tomioka;Junichi Motohisa;Shinjiroh Hara;Takashi Fukui.
Nano Letters (2008)
GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si
Katsuhiro Tomioka;Junichi Motohisa;Shinjiroh Hara;Kenji Hiruma.
Nano Letters (2010)
Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy
Jinichiro Noborisaka;Junichi Motohisa;Takashi Fukui.
Applied Physics Letters (2005)
Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays
Premila Mohan;Junichi Motohisa;Takashi Fukui.
GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition
T. Fukui;S. Ando;Y. Tokura;T. T. Toriyama.
Applied Physics Letters (1991)
Single GaAs/GaAsP coaxial core-shell nanowire lasers.
Bin Hua;Junichi Motohisa;Yasunori Kobayashi;Shinjiroh Hara.
Nano Letters (2009)
Growth of Core–Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy
Hajime Goto;Katsutoshi Nosaki;Katsuhiro Tomioka;Shinjiro Hara.
Applied Physics Express (2009)
Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy
J. Noborisaka;J. Motohisa;S. Hara;T. Fukui.
Applied Physics Letters (2005)
(AlAs)0.5(GaAs)0.5 fractional‐layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor deposition
Takashi Fukui;Hisao Saito.
Applied Physics Letters (1987)
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