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Takashi Fukui

Takashi Fukui

D-Index & Metrics

Materials Science

D-Index
63
Citations
13967
World Ranking
6191
National Ranking
309

Overview

Takashi Fukui is affiliated with Hokkaido University in Japan and specializes primarily in the field of Engineering. Their research spans several subfields including Electrical and Electronic Engineering, Control and Systems Engineering, Artificial Intelligence, Surgery, and Mechanical Engineering.

Their work covers a range of topics with a focus on Anomaly Detection Techniques and Applications as well as Fault Detection and Control Systems. Additional areas of research include Nanowire Synthesis and Applications, Advancements in Semiconductor Devices and Circuit Design, Semiconductor Quantum Structures and Devices, Semiconductor materials and devices, and Carcinogens and Genotoxicity Assessment.

Takashi Fukui has published recent papers in various scientific venues. These include:

  • Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes, 2020, Scientific Reports
  • InGaAs-InP core-shell nanowire/Si junction for vertical tunnel field-effect transistor, 2020, Applied Physics Letters
  • Development of a genotoxicity/carcinogenicity assessment method by DNA adductome analysis, 2024, Mutation Research/Genetic Toxicology and Environmental Mutagenesis
  • Explainable symptom detection in telemetry of ISS with Random Forest and SpecTRM, 2022, 2022 IEEE Aerospace Conference (AERO)
  • Automation and Operation Record of Large Overhead Crane for Segment Transportation, 2020, Proceedings of the... ISARC

Frequently collaborating coauthors include Shota Iino, Hideki Nomoto, Yasutaka Michiura, Takayuki Hirose, and Sayaka Ishizawa.

Their publications have appeared in venues such as Scientific Reports, Applied Physics Letters, Mutation Research/Genetic Toxicology and Environmental Mutagenesis, the IEEE Aerospace Conference, and the Proceedings of the ISARC conference.

Best Publications

  • A III–V nanowire channel on silicon for high-performance vertical transistors

    Katsuhiro Tomioka;Katsuhiro Tomioka;Masatoshi Yoshimura;Takashi Fukui

  • Control of InAs Nanowire Growth Directions on Si

    Katsuhiro Tomioka;Junichi Motohisa;Shinjiroh Hara;Takashi Fukui

  • GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si

    Katsuhiro Tomioka;Junichi Motohisa;Shinjiroh Hara;Kenji Hiruma

  • Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy

    Jinichiro Noborisaka;Junichi Motohisa;Takashi Fukui

  • GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition

    T. Fukui;S. Ando;Y. Tokura;T. T. Toriyama

  • Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays

    Premila Mohan;Junichi Motohisa;Takashi Fukui

  • Single GaAs/GaAsP coaxial core-shell nanowire lasers.

    Bin Hua;Junichi Motohisa;Yasunori Kobayashi;Shinjiroh Hara

  • Self-organized growth of quantum-dot structures

    Richard Nötzel

  • Growth of Core–Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy

    Hajime Goto;Katsutoshi Nosaki;Katsuhiro Tomioka;Shinjiro Hara

  • Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy

    J. Noborisaka;J. Motohisa;S. Hara;T. Fukui

  • Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

    K. Kumakura;K. Kumakura;K. Kumakura;T. Makimoto;T. Makimoto;T. Makimoto;N. Kobayashi;N. Kobayashi;T. Hashizume

  • (AlAs)0.5(GaAs)0.5 fractional‐layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor deposition

    Takashi Fukui;Hisao Saito

  • Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates

    J. Motohisa;J. Noborisaka;J. Takeda;M. Inari

  • (AlAs)1/2(GaAs)1/2 fractional-layer superlattices grown on (001) vicinal GaAs substrates by metal-organic chemical vapor deposition

    Takashi Fukui;Hisao Saito

  • Fabrication of InP∕InAs∕InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy

    Premila Mohan;Junichi Motohisa;Takashi Fukui

  • Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate.

    Katsuhiro Tomioka;Yasunori Kobayashi;Junichi Motohisa;Shinjiroh Hara

  • Steep-slope tunnel field-effect transistors using III–V nanowire/Si heterojunction

    Katsuhiro Tomioka;Masatoshi Yoshimura;Takashi Fukui

  • III–V Nanowires on Si Substrate: Selective-Area Growth and Device Applications

    K. Tomioka;T. Tanaka;S. Hara;K. Hiruma

  • Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE

    Keitaro Ikejiri;Jinichiro Noborisaka;Shinjiroh Hara;Junichi Motohisa

  • Two-stage Kondo effect in a quantum dot at a high magnetic field.

    W. G. van der Wiel;S. De Franceschi;J. M. Elzerman;S. Tarucha

  • Growth of highly uniform InAs nanowire arrays by selective-area MOVPE

    K. Tomioka;P. Mohan;J. Noborisaka;S. Hara

Frequent Co-Authors

Junichi Motohisa
Junichi Motohisa Hokkaido University
Hideki Hasegawa
Hideki Hasegawa Hokkaido University
Yasuhiro Tokura
Yasuhiro Tokura University of Tsukuba
Yasuaki Masumoto
Yasuaki Masumoto University of Tsukuba
Toshiaki Tamamura
Toshiaki Tamamura NTT Electronics
Yoshiji Horikoshi
Yoshiji Horikoshi Waseda University
Jeremy J. Baumberg
Jeremy J. Baumberg University of Cambridge
R Richard Nötzel
R Richard Nötzel South China Normal University
Makoto Kasu
Makoto Kasu Saga University
Toshiki Makimoto
Toshiki Makimoto Waseda University

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