World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
67
Citations
15793
World Ranking
5121
National Ranking
1345

Engineering and Technology

D-Index
63
Citations
14692
World Ranking
1764
National Ranking
572

E. F. Schubert publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where E. F. Schubert sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 205 publications — 50th percentile

50% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

E. F. Schubert D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where E. F. Schubert sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 63 D-Index — 83rd percentile

83% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Research.com Recognitions

  • 2001 - OSA Fellows For contributions to light-emitting diodes. In particular for the invention and demonstration of the resonant-cavity LED and the photon-recycling semiconductor LED.
  • 2001 - Fellow of American Physical Society (APS) Citation For pioneering contributions to the doping of semiconductors including delta doping, doping of compositionally graded structures resulting in the elimination of band discontinuities, and superlattice doping to enhance acceptor activation
  • 1999 - SPIE Fellow

Overview

E. F. Schubert is affiliated with Rensselaer Polytechnic Institute in the United States and is a researcher active primarily in the field of Engineering, with particular focus on Electrical and Electronic Engineering. Their work spans several subfields including Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Biomedical Engineering, and Materials Chemistry.

The main topics in Schubert's research include:

  • GaN-based semiconductor devices and materials
  • Gas Sensing Nanomaterials and Sensors
  • Ga2O3 and related materials
  • Nanowire Synthesis and Applications
  • Semiconductor materials and devices
  • Thin-Film Transistor Technologies
  • ZnO doping and properties

Schubert's recent publications illustrate a focus on semiconductor and optoelectronic devices. Notable works include:

  • "Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure," published in 2020 in Scientific Reports
  • "Dennard Scaling in Optoelectronics: Scientific Challenges and Countermeasures of Micro-LEDs for Displays," published in 2022 in Laser & Photonics Review
  • "A next-generation light-emitting device: ZOGAN LED with a heterogeneous p-layer composed of oxide and nitride semiconductors," published in 2024 in AIP Advances
  • "Ultra-high-rate Manufacturing of Thermoplastic Window Plug using Hybrid Overmolding," published in 2024 in SAMPE JOURNAL

These publications have appeared in a range of venues where Schubert has multiple contributions, including Scientific Reports, Laser & Photonics Review, AIP Advances, and SAMPE JOURNAL.

Their frequent co-authors are Bhishma Pandit, Jaehee Cho, Boyang Lu, Lai Wang, and Zhibiao Hao, indicating collaboration across several projects within their research areas.

Schubert has been recognized with several professional distinctions, including being named a Fellow of the American Physical Society in 2001. The citation for this award highlights their pioneering contributions to the doping of semiconductors, notably delta doping, doping of compositionally graded structures, and superlattice doping to enhance acceptor activation. In the same year, Schubert was also elected an OSA Fellow for contributions to light-emitting diodes, particularly for the invention and demonstration of resonant-cavity LEDs and photon-recycling semiconductor LEDs. Earlier, in 1999, they were named an SPIE Fellow.

Best Publications

  • High Extraction Efficiency of Spontaneous Emission from Slabs of Photonic Crystals

    Shanhui Fan;Pierre R. Villeneuve;J. D. Joannopoulos;E. F. Schubert

  • Doping in III-V Semiconductors

    E. F. Schubert

  • Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes

    Jay M. Shah;Y.-L. Li;Th. Gessmann;E. F. Schubert

  • Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method

    Y. Xi;E. F. Schubert

  • Ga2O3 films for electronic and optoelectronic applications

    M. Passlack;E. F. Schubert;W. S. Hobson;M. Hong

  • Resonant cavity light‐emitting diode

    E. F. Schubert;Y.‐H. Wang;A. Y. Cho;L.‐W. Tu

  • Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes

    S. Chhajed;Y. Xi;Y.-L. Li;Th. Gessmann

  • Delta doping of III–V compound semiconductors: Fundamentals and device applications

    E. F. Schubert

  • Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

    Q. Dai;M. F. Schubert;M. H. Kim;J. K. Kim

  • Highly efficient light-emitting diodes with microcavities

    E. F. Schubert;N. E. J. Hunt;M. Micovic;R. J. Malik

  • Light-Extraction Enhancement of GaInN Light-Emitting Diodes by Graded-Refractive-Index Indium Tin Oxide Anti-Reflection Contact†

    J. K. Kim;S. Chhajed;M. F. Schubert;E. F. Schubert

  • CRYSTALLOGRAPHIC WET CHEMICAL ETCHING OF GAN

    D. A. Stocker;E. F. Schubert;J. M. Redwing

  • Current crowding in GaN/InGaN light emitting diodes on insulating substrates

    X. Guo;E. F. Schubert

  • Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates

    X. Guo;E. F. Schubert

  • Optical properties of Si-doped GaN

    E. F. Schubert;I. D. Goepfert;W. Grieshaber;W. Grieshaber;J. M. Redwing

  • High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications

    Th. Gessmann;E. F. Schubert

  • Controlled atomic spontaneous emission from Er3+ in a transparent Si/SiO2 microcavity.

    A. M. Vredenberg;N. E. J. Hunt;E. F. Schubert;D. C. Jacobson

  • Dielectric properties of electron‐beam deposited Ga2O3 films

    M. Passlack;N. E. J. Hunt;E. F. Schubert;G. J. Zydzik

  • Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods

    Y. Xi;J.-Q. Xi;Th. Gessmann;J. M. Shah

  • Temperature and modulation characteristics of resonant-cavity light-emitting diodes

    E.F. Schubert;N.E.J. Hunt;R.J. Malik;M. Micovic

  • Internal quantum efficiency and non-radiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

    Q. Dai;M. F. Schubert;M. H. Kim;J. K. Kim

Frequent Co-Authors

Jong Kyu Kim
Jong Kyu Kim Pohang University of Science and Technology
Alfred Y. Cho
Alfred Y. Cho Nokia (United States)
Joan M. Redwing
Joan M. Redwing Pennsylvania State University
Won-Tien Tsang
Won-Tien Tsang AT&T (United States)
John M. Poate
John M. Poate Nokia (United States)
Niloy K. Dutta
Niloy K. Dutta University of Connecticut
Minghwei Hong
Minghwei Hong National Taiwan University
Andrei Osinsky
Andrei Osinsky Corning (United States)
Jinn-Kong Sheu
Jinn-Kong Sheu National Cheng Kung University
Joseph Petrus Mannaerts
Joseph Petrus Mannaerts National Tsing Hua University

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