2001 - Fellow of American Physical Society (APS) Citation For pioneering contributions to the doping of semiconductors including delta doping, doping of compositionally graded structures resulting in the elimination of band discontinuities, and superlattice doping to enhance acceptor activation
2001 - OSA Fellows For contributions to light-emitting diodes. In particular for the invention and demonstration of the resonant-cavity LED and the photon-recycling semiconductor LED.
1999 - SPIE Fellow
Erdmann Frederick Schubert mostly deals with Optoelectronics, Light-emitting diode, Doping, Optics and Diode. His Optoelectronics study integrates concerns from other disciplines, such as Ohmic contact and Spontaneous emission. His work deals with themes such as Luminous efficacy, Laser linewidth, Junction temperature and LED lamp, which intersect with Light-emitting diode.
His Doping research includes elements of Molecular beam epitaxy, Epitaxy, Heterojunction and Superlattice. The concepts of his Diode study are interwoven with issues in Spectral purity, Gallium arsenide and Photon. The Semiconductor study combines topics in areas such as Free space and Resonator.
His primary areas of study are Optoelectronics, Optics, Doping, Light-emitting diode and Semiconductor. His research integrates issues of Ohmic contact and Laser in his study of Optoelectronics. His Doping study incorporates themes from Molecular beam epitaxy, Superlattice and Analytical chemistry.
In his study, Quantum efficiency is inextricably linked to Quantum well, which falls within the broad field of Light-emitting diode. His Semiconductor research includes elements of Semiconductor device and Reflector. His study in the field of Heterojunction also crosses realms of Impurity.
His main research concerns Optoelectronics, Light-emitting diode, Optics, Diode and Wide-bandgap semiconductor. His research on Optoelectronics focuses in particular on Blueshift. His biological study spans a wide range of topics, including Quantum well, Wavelength, Gallium nitride and Junction temperature.
His Optics research is multidisciplinary, incorporating perspectives in Layer and Dielectric. His Diode research integrates issues from Low voltage, Polarization, Semiconductor device and High voltage. His Wide-bandgap semiconductor research is multidisciplinary, relying on both Chemical vapor deposition, Epitaxy, Photoluminescence, Analytical chemistry and Quantum efficiency.
Erdmann Frederick Schubert mainly investigates Optics, Refractive index, Optoelectronics, Wide-bandgap semiconductor and Light-emitting diode. In most of his Optics studies, his work intersects topics such as Band gap. The Refractive index study combines topics in areas such as Nanoporous, Thin film, Figure of merit and Total internal reflection.
His work on Diode as part of general Optoelectronics study is frequently linked to Order of magnitude, bridging the gap between disciplines. His work deals with themes such as Sapphire, Photoluminescence, Analytical chemistry and Epitaxy, which intersect with Wide-bandgap semiconductor. His studies deal with areas such as Nitride, Junction temperature and LED lamp as well as Light-emitting diode.
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High Extraction Efficiency of Spontaneous Emission from Slabs of Photonic Crystals
Shanhui Fan;Pierre R. Villeneuve;J. D. Joannopoulos;E. F. Schubert.
Physical Review Letters (1997)
Doping in III-V Semiconductors
E. F. Schubert.
Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes
Jay M. Shah;Y.-L. Li;Th. Gessmann;E. F. Schubert.
Journal of Applied Physics (2003)
Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method
Y. Xi;E. F. Schubert.
Applied Physics Letters (2004)
Ga2O3 films for electronic and optoelectronic applications
M. Passlack;E. F. Schubert;W. S. Hobson;M. Hong.
Journal of Applied Physics (1995)
Resonant cavity light‐emitting diode
E. F. Schubert;Y.‐H. Wang;A. Y. Cho;L.‐W. Tu.
Applied Physics Letters (1992)
Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes
S. Chhajed;Y. Xi;Y.-L. Li;Th. Gessmann.
Journal of Applied Physics (2005)
Delta doping of III–V compound semiconductors: Fundamentals and device applications
E. F. Schubert.
Journal of Vacuum Science and Technology (1990)
Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities
Q. Dai;M. F. Schubert;M. H. Kim;J. K. Kim.
Applied Physics Letters (2009)
Highly efficient light-emitting diodes with microcavities
E. F. Schubert;N. E. J. Hunt;M. Micovic;R. J. Malik.
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