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D-Index & Metrics

Materials Science

D-Index
67
Citations
15793
World Ranking
5123
National Ranking
1347

Engineering and Technology

D-Index
63
Citations
14692
World Ranking
1762
National Ranking
571

Research.com Recognitions

  • 2001 - OSA Fellows For contributions to light-emitting diodes. In particular for the invention and demonstration of the resonant-cavity LED and the photon-recycling semiconductor LED.
  • 2001 - Fellow of American Physical Society (APS) Citation For pioneering contributions to the doping of semiconductors including delta doping, doping of compositionally graded structures resulting in the elimination of band discontinuities, and superlattice doping to enhance acceptor activation
  • 1999 - SPIE Fellow

Overview

E. F. Schubert is affiliated with Rensselaer Polytechnic Institute in the United States and is a researcher active primarily in the field of Engineering, with particular focus on Electrical and Electronic Engineering. Their work spans several subfields including Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Biomedical Engineering, and Materials Chemistry.

The main topics in Schubert's research include:

  • GaN-based semiconductor devices and materials
  • Gas Sensing Nanomaterials and Sensors
  • Ga2O3 and related materials
  • Nanowire Synthesis and Applications
  • Semiconductor materials and devices
  • Thin-Film Transistor Technologies
  • ZnO doping and properties

Schubert's recent publications illustrate a focus on semiconductor and optoelectronic devices. Notable works include:

  • "Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure," published in 2020 in Scientific Reports
  • "Dennard Scaling in Optoelectronics: Scientific Challenges and Countermeasures of Micro-LEDs for Displays," published in 2022 in Laser & Photonics Review
  • "A next-generation light-emitting device: ZOGAN LED with a heterogeneous p-layer composed of oxide and nitride semiconductors," published in 2024 in AIP Advances
  • "Ultra-high-rate Manufacturing of Thermoplastic Window Plug using Hybrid Overmolding," published in 2024 in SAMPE JOURNAL

These publications have appeared in a range of venues where Schubert has multiple contributions, including Scientific Reports, Laser & Photonics Review, AIP Advances, and SAMPE JOURNAL.

Their frequent co-authors are Bhishma Pandit, Jaehee Cho, Boyang Lu, Lai Wang, and Zhibiao Hao, indicating collaboration across several projects within their research areas.

Schubert has been recognized with several professional distinctions, including being named a Fellow of the American Physical Society in 2001. The citation for this award highlights their pioneering contributions to the doping of semiconductors, notably delta doping, doping of compositionally graded structures, and superlattice doping to enhance acceptor activation. In the same year, Schubert was also elected an OSA Fellow for contributions to light-emitting diodes, particularly for the invention and demonstration of resonant-cavity LEDs and photon-recycling semiconductor LEDs. Earlier, in 1999, they were named an SPIE Fellow.

Best Publications

  • High Extraction Efficiency of Spontaneous Emission from Slabs of Photonic Crystals

    Shanhui Fan;Pierre R. Villeneuve;J. D. Joannopoulos;E. F. Schubert

  • Doping in III-V Semiconductors

    E. F. Schubert

  • Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes

    Jay M. Shah;Y.-L. Li;Th. Gessmann;E. F. Schubert

  • Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method

    Y. Xi;E. F. Schubert

  • Ga2O3 films for electronic and optoelectronic applications

    M. Passlack;E. F. Schubert;W. S. Hobson;M. Hong

  • Resonant cavity light‐emitting diode

    E. F. Schubert;Y.‐H. Wang;A. Y. Cho;L.‐W. Tu

  • Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes

    S. Chhajed;Y. Xi;Y.-L. Li;Th. Gessmann

  • Delta doping of III–V compound semiconductors: Fundamentals and device applications

    E. F. Schubert

  • Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

    Q. Dai;M. F. Schubert;M. H. Kim;J. K. Kim

  • Highly efficient light-emitting diodes with microcavities

    E. F. Schubert;N. E. J. Hunt;M. Micovic;R. J. Malik

  • Light-Extraction Enhancement of GaInN Light-Emitting Diodes by Graded-Refractive-Index Indium Tin Oxide Anti-Reflection Contact†

    J. K. Kim;S. Chhajed;M. F. Schubert;E. F. Schubert

  • CRYSTALLOGRAPHIC WET CHEMICAL ETCHING OF GAN

    D. A. Stocker;E. F. Schubert;J. M. Redwing

  • Current crowding in GaN/InGaN light emitting diodes on insulating substrates

    X. Guo;E. F. Schubert

  • Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates

    X. Guo;E. F. Schubert

  • Optical properties of Si-doped GaN

    E. F. Schubert;I. D. Goepfert;W. Grieshaber;W. Grieshaber;J. M. Redwing

  • High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications

    Th. Gessmann;E. F. Schubert

  • Controlled atomic spontaneous emission from Er3+ in a transparent Si/SiO2 microcavity.

    A. M. Vredenberg;N. E. J. Hunt;E. F. Schubert;D. C. Jacobson

  • Dielectric properties of electron‐beam deposited Ga2O3 films

    M. Passlack;N. E. J. Hunt;E. F. Schubert;G. J. Zydzik

  • Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods

    Y. Xi;J.-Q. Xi;Th. Gessmann;J. M. Shah

  • Temperature and modulation characteristics of resonant-cavity light-emitting diodes

    E.F. Schubert;N.E.J. Hunt;R.J. Malik;M. Micovic

  • Internal quantum efficiency and non-radiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

    Q. Dai;M. F. Schubert;M. H. Kim;J. K. Kim

Frequent Co-Authors

Jong Kyu Kim
Jong Kyu Kim Pohang University of Science and Technology
Alfred Y. Cho
Alfred Y. Cho Nokia (United States)
Joan M. Redwing
Joan M. Redwing Pennsylvania State University
Won-Tien Tsang
Won-Tien Tsang AT&T (United States)
John M. Poate
John M. Poate Nokia (United States)
Niloy K. Dutta
Niloy K. Dutta University of Connecticut
Minghwei Hong
Minghwei Hong National Taiwan University
Andrei Osinsky
Andrei Osinsky Corning (United States)
Jinn-Kong Sheu
Jinn-Kong Sheu National Cheng Kung University
Joseph Petrus Mannaerts
Joseph Petrus Mannaerts National Tsing Hua University

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