World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
60
Citations
13385
World Ranking
1638
National Ranking
665

Materials Science

D-Index
62
Citations
14308
World Ranking
6456
National Ranking
1640

Won-Tien Tsang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Won-Tien Tsang sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 457 publications — 81st percentile

81% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Won-Tien Tsang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Won-Tien Tsang sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 60 D-Index — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Won-Tien Tsang is affiliated with AT&T in the United States. Their work is associated with this primary institution, and they contribute to the scientific and technological advancements connected to this organization.

There are no recorded recent papers, co-authors, publication venues, book publications, main or subfields of study, or specific main topics linked to Won-Tien Tsang in the available data. Likewise, there are no documented awards or distinctions attributed to them.

Due to the limited available information, no detailed overview of their research focus, collaborations, or publication history can be presented at this time.

Best Publications

  • Large room‐temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures

    D. A. B. Miller;D. S. Chemla;D. J. Eilenberger;P. W. Smith

  • Observation of the excited level of excitons in GaAs quantum wells

    R. C. Miller;D. A. Kleinman;W. T. Tsang;A. C. Gossard

  • Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio

    F. Capasso;W. T. Tsang;A. L. Hutchinson;G. F. Williams

  • High‐speed direct single‐frequency modulation with large tuning rate and frequency excursion in cleaved‐coupled‐cavity semiconductor lasers

    W. T. Tsang;N. A. Olsson;R. A. Logan

  • Staircase solid-state photomultipliers and avalanche photodiodes with enhanced ionization rates ratio

    F. Capasso;Won-Tien Tsang;G.F. Williams

  • Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy

    Unknown

  • Extrinsic photoluminescence from GaAs quantum wells

    R. C. Miller;A. C. Gossard;W. T. Tsang;O. Munteanu

  • Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular‐beam epitaxy

    Unknown

  • Capture of electrons and holes in quantum wells

    Benoit Deveaud;Jagdeep Shah;T. C. Damen;W. T. Tsang

  • Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As

    D. V. Lang;M. B. Panish;F. Capasso;J. Allam

  • Subpicosecond pulses from passively mode‐locked GaAs buried optical guide semiconductor lasers

    J. P. van der Ziel;W. T. Tsang;R. A. Logan;R. M. Mikulyak

  • Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K

    E.F. Schubert;J.E. Cunningham;W.T. Tsang

  • Extrinsic layer at AlxGa1−xAs‐GaAs interfaces

    R. C. Miller;W. T. Tsang;O. Munteanu

  • Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition

    Unknown

  • Current injection GaAs‐AlxGa1−xAs multi‐quantum‐well heterostructure lasers prepared by molecular beam epitaxy

    W. T. Tsang;C. Weisbuch;R. C. Miller;R. Dingle

  • Multiplication noise of wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodes

    J.C. Campbell;S. Chandrasekhar;W.T. Tsang;G.J. Qua

  • The graded bandgap multilayer avalanche photodiode: A new low-noise detector

    G.F. Williams;F. Capasso;W.T. Tsang

  • Progress in chemical beam epitaxy

    W.T. Tsang

  • Delta-doped ohmic contacts to n-GaAs

    E. F. Schubert;J. E. Cunningham;W. T. Tsang;T. H. Chiu

  • Selectively δ‐doped AlxGa1−xAs/GaAs heterostructures with high two‐dimensional electron‐gas concentrations n2DEG≥1.5×1012 cm−2 for field‐effect transistors

    E. F. Schubert;J. E. Cunningham;W. T. Tsang;G. L. Timp

  • The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy

    W. T. Tsang;F. K. Reinhart;J. A. Ditzenberger

  • Integrated multilayer GaAs lasers separated by tunnel junctions

    J. P. van der Ziel;W. T. Tsang

  • Semiconductor distributed feedback lasers with quantum well or superlattice gratings for index or gain‐coupled optical feedback

    W. T. Tsang;F. S. Choa;M. C. Wu;Y. K. Chen

  • Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure devices

    W.T. Tsang

  • Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes

    J.C. Campbell;B.C. Johnson;G.J. Qua;W.T. Tsang

Frequent Co-Authors

R. A. Logan
R. A. Logan Nokia (United States)
Ming C. Wu
Ming C. Wu University of California, Berkeley
Young-Kai Chen
Young-Kai Chen Princeton University
Federico Capasso
Federico Capasso Harvard University
N.A. Olsson
N.A. Olsson Nokia (United States)
Thomas L. Koch
Thomas L. Koch University of Arizona
E. F. Schubert
E. F. Schubert Rensselaer Polytechnic Institute
Joe C. Campbell
Joe C. Campbell University of Virginia
Niloy K. Dutta
Niloy K. Dutta University of Connecticut
Albert L. Hutchinson
Albert L. Hutchinson Nokia (United States)

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