World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
60
Citations
13385
World Ranking
1638
National Ranking
664

Materials Science

D-Index
62
Citations
14308
World Ranking
6458
National Ranking
1642

Overview

Won-Tien Tsang is affiliated with AT&T in the United States. Their work is associated with this primary institution, and they contribute to the scientific and technological advancements connected to this organization.

There are no recorded recent papers, co-authors, publication venues, book publications, main or subfields of study, or specific main topics linked to Won-Tien Tsang in the available data. Likewise, there are no documented awards or distinctions attributed to them.

Due to the limited available information, no detailed overview of their research focus, collaborations, or publication history can be presented at this time.

Best Publications

  • Large room‐temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures

    D. A. B. Miller;D. S. Chemla;D. J. Eilenberger;P. W. Smith

  • Observation of the excited level of excitons in GaAs quantum wells

    R. C. Miller;D. A. Kleinman;W. T. Tsang;A. C. Gossard

  • Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio

    F. Capasso;W. T. Tsang;A. L. Hutchinson;G. F. Williams

  • High‐speed direct single‐frequency modulation with large tuning rate and frequency excursion in cleaved‐coupled‐cavity semiconductor lasers

    W. T. Tsang;N. A. Olsson;R. A. Logan

  • Staircase solid-state photomultipliers and avalanche photodiodes with enhanced ionization rates ratio

    F. Capasso;Won-Tien Tsang;G.F. Williams

  • Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy

    Unknown

  • Extrinsic photoluminescence from GaAs quantum wells

    R. C. Miller;A. C. Gossard;W. T. Tsang;O. Munteanu

  • Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular‐beam epitaxy

    Unknown

  • Capture of electrons and holes in quantum wells

    Benoit Deveaud;Jagdeep Shah;T. C. Damen;W. T. Tsang

  • Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As

    D. V. Lang;M. B. Panish;F. Capasso;J. Allam

  • Subpicosecond pulses from passively mode‐locked GaAs buried optical guide semiconductor lasers

    J. P. van der Ziel;W. T. Tsang;R. A. Logan;R. M. Mikulyak

  • Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K

    E.F. Schubert;J.E. Cunningham;W.T. Tsang

  • Extrinsic layer at AlxGa1−xAs‐GaAs interfaces

    R. C. Miller;W. T. Tsang;O. Munteanu

  • Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition

    Unknown

  • Current injection GaAs‐AlxGa1−xAs multi‐quantum‐well heterostructure lasers prepared by molecular beam epitaxy

    W. T. Tsang;C. Weisbuch;R. C. Miller;R. Dingle

  • Multiplication noise of wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodes

    J.C. Campbell;S. Chandrasekhar;W.T. Tsang;G.J. Qua

  • The graded bandgap multilayer avalanche photodiode: A new low-noise detector

    G.F. Williams;F. Capasso;W.T. Tsang

  • Progress in chemical beam epitaxy

    W.T. Tsang

  • Delta-doped ohmic contacts to n-GaAs

    E. F. Schubert;J. E. Cunningham;W. T. Tsang;T. H. Chiu

  • Selectively δ‐doped AlxGa1−xAs/GaAs heterostructures with high two‐dimensional electron‐gas concentrations n2DEG≥1.5×1012 cm−2 for field‐effect transistors

    E. F. Schubert;J. E. Cunningham;W. T. Tsang;G. L. Timp

  • The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy

    W. T. Tsang;F. K. Reinhart;J. A. Ditzenberger

  • Integrated multilayer GaAs lasers separated by tunnel junctions

    J. P. van der Ziel;W. T. Tsang

  • Semiconductor distributed feedback lasers with quantum well or superlattice gratings for index or gain‐coupled optical feedback

    W. T. Tsang;F. S. Choa;M. C. Wu;Y. K. Chen

  • Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure devices

    W.T. Tsang

  • Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes

    J.C. Campbell;B.C. Johnson;G.J. Qua;W.T. Tsang

Frequent Co-Authors

R. A. Logan
R. A. Logan Nokia (United States)
Ming C. Wu
Ming C. Wu University of California, Berkeley
Young-Kai Chen
Young-Kai Chen Princeton University
Federico Capasso
Federico Capasso Harvard University
N.A. Olsson
N.A. Olsson Nokia (United States)
Thomas L. Koch
Thomas L. Koch University of Arizona
E. F. Schubert
E. F. Schubert Rensselaer Polytechnic Institute
Joe C. Campbell
Joe C. Campbell University of Virginia
Niloy K. Dutta
Niloy K. Dutta University of Connecticut
Albert L. Hutchinson
Albert L. Hutchinson Nokia (United States)

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Best Scientists Citing Won-Tien Tsang