Morton B. Panish

Research.com Recognitions

• 1987 - Member of the National Academy of Sciences
• 1986 - Member of the National Academy of Engineering For contributions to the conceptualization and fabrication of heterojunction semiconductor lasers.
• 1972 - Fellow of American Physical Society (APS)

Overview

Best Publications

• Low‐temperature photoluminescence from InGaAs/InP quantum wires and boxes

  H. Temkin;G. J. Dolan;M. B. Panish;S. N. G. Chu

  409
  Citations

• Phase equilibria in ternary III–V systems

  M.B. Panish;M. Ilegems

  381
  Citations

• Subpicosecond InP/InGaAs heterostructure bipolar transistors

  Y.-K. Chen;R.N. Nottenburg;M.B. Panish;R.A. Hamm

  286
  Citations

• Temperature Dependence of the Energy Gap in GaAs and GaP

  Unknown

  275
  Citations

• Refractive index of AlxGa1−xAs between 1.2 and 1.8 eV

  Unknown

  238
  Citations

• Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P

  Unknown

  194
  Citations

• GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers

  Unknown

  187
  Citations

• Effects of two‐dimensional confinement on the optical properties of InGaAs/InP quantum wire structures

  D. Gershoni;H. Temkin;G. J. Dolan;J. Dunsmuir

  177
  Citations

• Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As

  D. V. Lang;M. B. Panish;F. Capasso;J. Allam

  177
  Citations

• InGaAs/InP long wavelength quantum well infrared photodetectors

  S. D. Gunapala;B. F. Levine;D. Ritter;R. Hamm

  167
  Citations

• Kinetic surface roughening in molecular beam epitaxy of InP.

  M. A. Cotta;R. A. Hamm;T. W. Staley;S. N. G. Chu

  165
  Citations

• Molecular-beam epitaxy

  Morton B. Panish

  156
  Citations

• Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers

  M. B. Panish;H. Temkin;S. Sumski

  152
  Citations

• Phase equilibria in III–V quaternary systems—application to Al-Ga-P-As

  M. Ilegems;M.B. Panish

  150
  Citations

• Implant‐induced high‐resistivity regions in InP and InGaAs

  S. J. Pearton;C. R. Abernathy;M. B. Panish;R. A. Hamm

  146
  Citations

• Gas-Source Molecular Beam Epitaxy

  Morton B. Panish;Henryk Temkin

  145
  Citations

• High-resolution x-ray diffraction studies of InGaAs(P)/InP superlattices grown by gas-source molecular-beam epitaxy

  J. M. Vandenberg;R. A. Hamm;M. B. Panish;H. Temkin

  140
  Citations

• Reflection noise in index-guided InGaAsP lasers

  H. Temkin;N. Olsson;J. Abeles;R. Logan

  135
  Citations

• Control of lattice parameters and dislocations in the system Ga1−xAlxAs1−yPy/GaAs

  G.A. Rozgonyi;P.M. Petroff;M.B. Panish

  134
  Citations

• Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy Gaps

  Unknown

  130
  Citations

• Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy

  M. B. Panish;H. Temkin;R. A. Hamm;S. N. G. Chu

  120
  Citations

• Ga-Al-As: Phase, thermodynamic and optical properties

  M.B Panish;S Sumski

  117
  Citations

• GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

  H. Temkin;M. B. Panish;P. M. Petroff;R. A. Hamm

  113
  Citations

• Hot-electron InGaAs/InP heterostructure bipolar transistors with f/sub T/ of 110 GHz

  R.N. Nottenburg;Y.K. Chen;M.B. Panish;D.A. Humphrey

  112
  Citations

• Critical layer thickness in strained Ga1−xInxAs/InP quantum wells

  H. Temkin;D. G. Gershoni;S. N. G. Chu;J. M. Vandenberg

  109
  Citations

• Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP

  R. E. Cavicchi;D. V. Lang;D. Gershoni;A. M. Sergent

  109
  Citations