Morton B. Panish

Morton B. Panish publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Morton B. Panish sits on this spectrum.

Morton B. Panish D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Morton B. Panish sits on this spectrum.

Research.com Recognitions

• 1987 - Member of the National Academy of Sciences
• 1986 - Member of the National Academy of Engineering For contributions to the conceptualization and fabrication of heterojunction semiconductor lasers.
• 1972 - Fellow of American Physical Society (APS)

Overview

Best Publications

• Low‐temperature photoluminescence from InGaAs/InP quantum wires and boxes

  H. Temkin;G. J. Dolan;M. B. Panish;S. N. G. Chu

  409
  Citations

• Phase equilibria in ternary III–V systems

  M.B. Panish;M. Ilegems

  381
  Citations

• Subpicosecond InP/InGaAs heterostructure bipolar transistors

  Y.-K. Chen;R.N. Nottenburg;M.B. Panish;R.A. Hamm

  286
  Citations

• Temperature Dependence of the Energy Gap in GaAs and GaP

  Unknown

  275
  Citations

• Refractive index of AlxGa1−xAs between 1.2 and 1.8 eV

  Unknown

  238
  Citations

• Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P

  Unknown

  194
  Citations

• GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers

  Unknown

  187
  Citations

• Effects of two‐dimensional confinement on the optical properties of InGaAs/InP quantum wire structures

  D. Gershoni;H. Temkin;G. J. Dolan;J. Dunsmuir

  177
  Citations

• Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As

  D. V. Lang;M. B. Panish;F. Capasso;J. Allam

  177
  Citations

• InGaAs/InP long wavelength quantum well infrared photodetectors

  S. D. Gunapala;B. F. Levine;D. Ritter;R. Hamm

  167
  Citations

• Kinetic surface roughening in molecular beam epitaxy of InP.

  M. A. Cotta;R. A. Hamm;T. W. Staley;S. N. G. Chu

  165
  Citations

• Molecular-beam epitaxy

  Morton B. Panish

  156
  Citations

• Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers

  M. B. Panish;H. Temkin;S. Sumski

  152
  Citations

• Phase equilibria in III–V quaternary systems—application to Al-Ga-P-As

  M. Ilegems;M.B. Panish

  150
  Citations

• Implant‐induced high‐resistivity regions in InP and InGaAs

  S. J. Pearton;C. R. Abernathy;M. B. Panish;R. A. Hamm

  146
  Citations

• Gas-Source Molecular Beam Epitaxy

  Morton B. Panish;Henryk Temkin

  145
  Citations

• High-resolution x-ray diffraction studies of InGaAs(P)/InP superlattices grown by gas-source molecular-beam epitaxy

  J. M. Vandenberg;R. A. Hamm;M. B. Panish;H. Temkin

  140
  Citations

• Reflection noise in index-guided InGaAsP lasers

  H. Temkin;N. Olsson;J. Abeles;R. Logan

  135
  Citations

• Control of lattice parameters and dislocations in the system Ga1−xAlxAs1−yPy/GaAs

  G.A. Rozgonyi;P.M. Petroff;M.B. Panish

  134
  Citations

• Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy Gaps

  Unknown

  130
  Citations

• Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy

  M. B. Panish;H. Temkin;R. A. Hamm;S. N. G. Chu

  120
  Citations

• Ga-Al-As: Phase, thermodynamic and optical properties

  M.B Panish;S Sumski

  117
  Citations

• GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

  H. Temkin;M. B. Panish;P. M. Petroff;R. A. Hamm

  113
  Citations

• Hot-electron InGaAs/InP heterostructure bipolar transistors with f/sub T/ of 110 GHz

  R.N. Nottenburg;Y.K. Chen;M.B. Panish;D.A. Humphrey

  112
  Citations

• Critical layer thickness in strained Ga1−xInxAs/InP quantum wells

  H. Temkin;D. G. Gershoni;S. N. G. Chu;J. M. Vandenberg

  109
  Citations

• Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP

  R. E. Cavicchi;D. V. Lang;D. Gershoni;A. M. Sergent

  109
  Citations