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D-Index & Metrics

Discipline name D-Index World Ranking National Ranking Publications Citations
Materials Science 64 6016 1533 215 10755

Morton B. Panish publications per year

The chart shows the history of publications by Morton B. Panish between 1954 and 2008, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Morton B. Panish published across 55 years, from 1954 to 2008, averaging 4.2 papers a year. Output peaked at 23 publications in 1991. 1 of the 231 publications appeared in the last two years.

No. of publications
5 10 15 20
Bar chart. Horizontal axis: year, 1954 to 2008. Vertical axis: number of publications, 0 to 23. Peak 23 publications in 1991. 1954: 1 publication 1955: 3 publications 1956: 1 publication 1957: 1 publication 1958: 2 publications 1959: 2 publications 1960: 0 publications 1961: 5 publications 1962: 2 publications 1963: 1 publication 1964: 0 publications 1965: 1 publication 1966: 6 publications 1967: 8 publications 1968: 3 publications 1969: 8 publications 1970: 10 publications 1971: 7 publications 1972: 6 publications 1973: 7 publications 1974: 12 publications 1975: 3 publications 1976: 2 publications 1977: 0 publications 1978: 4 publications 1979: 3 publications 1980: 2 publications 1981: 1 publication 1982: 0 publications 1983: 0 publications 1984: 3 publications 1985: 4 publications 1986: 15 publications 1987: 12 publications 1988: 10 publications 1989: 21 publications 1990: 14 publications 1991: 23 publications 1992: 11 publications 1993: 13 publications 1994: 2 publications 1995: 1 publication 1996: 0 publications 1997: 0 publications 1998: 0 publications 1999: 0 publications 2000: 0 publications 2001: 0 publications 2002: 0 publications 2003: 0 publications 2004: 0 publications 2005: 0 publications 2006: 0 publications 2007: 0 publications 2008: 1 publication
1954 2008

231 publications in total across all disciplines

View publications per year as a table
Morton B. Panish: publications per year, 1954 to 2008
Year Publications
1954 1
1955 3
1956 1
1957 1
1958 2
1959 2
1960 0
1961 5
1962 2
1963 1
1964 0
1965 1
1966 6
1967 8
1968 3
1969 8
1970 10
1971 7
1972 6
1973 7
1974 12
1975 3
1976 2
1977 0
1978 4
1979 3
1980 2
1981 1
1982 0
1983 0
1984 3
1985 4
1986 15
1987 12
1988 10
1989 21
1990 14
1991 23
1992 11
1993 13
1994 2
1995 1
1996 0
1997 0
1998 0
1999 0
2000 0
2001 0
2002 0
2003 0
2004 0
2005 0
2006 0
2007 0
2008 1
Total 231
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Morton B. Panish publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Morton B. Panish sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 210–229 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 215 publications — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862 215
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Morton B. Panish D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Morton B. Panish sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 64–65 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 64 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533 64
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Research.com Recognitions

  • 1987 - Member of the National Academy of Sciences
  • 1986 - Member of the National Academy of Engineering For contributions to the conceptualization and fabrication of heterojunction semiconductor lasers.
  • 1972 - Fellow of American Physical Society (APS)

Overview

Morton B. Panish is affiliated with Nokia in the United States. Throughout their career, they have contributed to the development of semiconductor laser technology, particularly focusing on heterojunction semiconductor lasers.

The scientist has been recognized with several awards acknowledging their contributions to the field. These include being named a Fellow of the American Physical Society (APS) in 1972. In 1986, they were elected as a Member of the National Academy of Engineering for contributions to the conceptualization and fabrication of heterojunction semiconductor lasers. The following year, in 1987, they became a Member of the National Academy of Sciences.

Morton B. Panish's research has primarily been situated within the broader scope of semiconductor physics and optoelectronics, as evidenced by their work on heterojunction lasers, which play a significant role in optical communication technologies.

Best Publications

  • Low‐temperature photoluminescence from InGaAs/InP quantum wires and boxes

    H. Temkin;G. J. Dolan;M. B. Panish;S. N. G. Chu

  • Phase equilibria in ternary III–V systems

    M.B. Panish;M. Ilegems

  • Subpicosecond InP/InGaAs heterostructure bipolar transistors

    Y.-K. Chen;R.N. Nottenburg;M.B. Panish;R.A. Hamm

  • Temperature Dependence of the Energy Gap in GaAs and GaP

    Unknown

  • Refractive index of AlxGa1−xAs between 1.2 and 1.8 eV

    Unknown

  • Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P

    Unknown

  • GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers

    Unknown

  • Effects of two‐dimensional confinement on the optical properties of InGaAs/InP quantum wire structures

    D. Gershoni;H. Temkin;G. J. Dolan;J. Dunsmuir

  • Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As

    D. V. Lang;M. B. Panish;F. Capasso;J. Allam

  • InGaAs/InP long wavelength quantum well infrared photodetectors

    S. D. Gunapala;B. F. Levine;D. Ritter;R. Hamm

  • Kinetic surface roughening in molecular beam epitaxy of InP.

    M. A. Cotta;R. A. Hamm;T. W. Staley;S. N. G. Chu

  • Molecular-beam epitaxy

    Morton B. Panish

  • Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers

    M. B. Panish;H. Temkin;S. Sumski

  • Phase equilibria in III–V quaternary systems—application to Al-Ga-P-As

    M. Ilegems;M.B. Panish

  • Implant‐induced high‐resistivity regions in InP and InGaAs

    S. J. Pearton;C. R. Abernathy;M. B. Panish;R. A. Hamm

  • Gas-Source Molecular Beam Epitaxy

    Morton B. Panish;Henryk Temkin

  • High-resolution x-ray diffraction studies of InGaAs(P)/InP superlattices grown by gas-source molecular-beam epitaxy

    J. M. Vandenberg;R. A. Hamm;M. B. Panish;H. Temkin

  • Reflection noise in index-guided InGaAsP lasers

    H. Temkin;N. Olsson;J. Abeles;R. Logan

  • Control of lattice parameters and dislocations in the system Ga1−xAlxAs1−yPy/GaAs

    G.A. Rozgonyi;P.M. Petroff;M.B. Panish

  • Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy Gaps

    Unknown

  • Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy

    M. B. Panish;H. Temkin;R. A. Hamm;S. N. G. Chu

  • Ga-Al-As: Phase, thermodynamic and optical properties

    M.B Panish;S Sumski

  • GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

    H. Temkin;M. B. Panish;P. M. Petroff;R. A. Hamm

  • Hot-electron InGaAs/InP heterostructure bipolar transistors with f/sub T/ of 110 GHz

    R.N. Nottenburg;Y.K. Chen;M.B. Panish;D.A. Humphrey

  • Critical layer thickness in strained Ga1−xInxAs/InP quantum wells

    H. Temkin;D. G. Gershoni;S. N. G. Chu;J. M. Vandenberg

  • Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP

    R. E. Cavicchi;D. V. Lang;D. Gershoni;A. M. Sergent

Frequent Co-Authors

Henryk Temkin
Henryk Temkin Texas Tech University
Dan Ritter
Dan Ritter Technion – Israel Institute of Technology
Young-Kai Chen
Young-Kai Chen Princeton University
A. F. J. Levi
A. F. J. Levi University of Southern California
Alfred Y. Cho
Alfred Y. Cho Nokia (United States)
Federico Capasso
Federico Capasso Harvard University
Peter H. Beton
Peter H. Beton University of Nottingham
Marc Ilegems
Marc Ilegems École Polytechnique Fédérale de Lausanne
Igal Brener
Igal Brener Sandia National Laboratories

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