World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
5328
World Ranking
5159
National Ranking
23

Dan Ritter publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Dan Ritter sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 265 publications — 49th percentile

49% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Dan Ritter D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Dan Ritter sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Dan Ritter is affiliated with the Technion - Israel Institute of Technology in Israel, focusing on research areas that intersect engineering, physics and astronomy, and materials science. Their work largely pertains to electrical and electronic engineering as well as condensed matter physics and materials chemistry.

The scientist's research emphasizes several subfields, including:

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials

Ritter's main topics of study involve semiconductor devices and materials, most notably:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Radio Frequency Integrated Circuit Design
  • Semiconductor Quantum Structures and Devices
  • Ga2O3 and related materials
  • ZnO doping and properties

Recent significant publications by Dan Ritter include:

  • Insight into Buffer Trap-Induced Current Saturation and Current Collapse in GaN RF Heterojunction Field-Effect Transistors, 2020, IEEE Transactions on Electron Devices
  • Investigation of Traps Impact on PAE and Linearity of AlGaN/GaN HEMTs Relying on a Combined TCAD-Compact Model Approach, 2024, IEEE Transactions on Electron Devices
  • Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect, 2020, Journal of Applied Physics
  • Two-dimensional carrier gas at a polar interface without surface band gap states: A first principles perspective, 2023, Applied Physics Letters
  • Space charge limited current in an ideal GaN heterojunction field effect transistor with no back-barrier, 2021, Solid State Communications

Their frequent co-authors include Durgesh C. Tripathi, Petros Beleniotis, Christos Zervos, Sascha Krause, and Matthias Rudolph. This indicates collaborative research efforts often focused on semiconductor devices and their electrical characteristics.

Dan Ritter publishes regularly in well-established venues such as IEEE Transactions on Electron Devices, Applied Physics Letters, Journal of Applied Physics, Solid State Communications, and the IEEE/MTT-S International Microwave Symposium.

Best Publications

  • Steady‐state photocarrier grating technique for diffusion‐length measurement in semiconductors: Theory and experimental results for amorphous silicon and semi‐insulating GaAs

    D. Ritter;K. Weiser;E. Zeldov

  • A CMOS Bidirectional 32-Element Phased-Array Transceiver at 60 GHz With LTCC Antenna

    E. Cohen;M. Ruberto;M. Cohen;O. Degani

  • A CMOS bidirectional 32-element phased-array transceiver at 60GHz with LTCC antenna

    Emanuel Cohen;Mark Ruberto;Moshik Cohen;Ofir Degani

  • InGaAs/InP long wavelength quantum well infrared photodetectors

    S. D. Gunapala;B. F. Levine;D. Ritter;R. Hamm

  • Ambipolar transport in amorphous semiconductors in the lifetime and relaxation-time regimes investigated by the steady-state photocarrier grating technique.

    D. Ritter;E. Zeldov;K. Weiser

  • Suppression of interference fringes in absorption measurements on thin films

    D. Ritter;K. Weiser

  • Electrical characteristics of metal-dielectric-metal and metal-dielectric-semiconductor structures based on electron beam evaporated Y2O3, Ta2O5 and Al2O3 thin film

    V. Mikhaelashvili;Y. Betzer;I. Prudnikov;M. Orenstein

  • A Bidirectional TX/RX Four-Element Phased Array at 60 GHz With RF-IF Conversion Block in 90-nm CMOS Process

    Emanuel Cohen;Claudio G Jakobson;Shmuel Ravid;Dan Ritter

  • On the extraction of linear and nonlinear physical parameters in nonideal diodes

    V. Mikhelashvili;G. Eisenstein;V. Garber;S. Fainleib

  • An ultra low power LNA with 15dB gain and 4.4db NF in 90nm CMOS process for 60 GHz phase array radio

    E. Cohen;S. Ravid;D. Ritter

  • Extraction of the InP/GaInAs heterojunction bipolar transistor small-signal equivalent circuit

    S.J. Spiegel;D. Ritter;R.A. Hamm;A. Feygenson

  • Compact metalorganic molecular‐beam epitaxy growth system

    R. A. Hamm;D. Ritter;H. Temkin

  • Anomalous electric field and temperature dependence of collector multiplication in InP/Ga0.47In0.53As heterojunction bipolar transistors

    D. Ritter;R. A. Hamm;A. Feygenson;M. B. Panish

  • Lattice‐matched InGaAsP/InP long‐wavelength quantum well infrared photodetectors

    S. D. Gunapala;B. F. Levine;D. Ritter;R. A. Hamm

  • A 10 Gbit/s OEIC photoreceiver using InP/InGaAs heterojunction bipolar transistors

    S. Chandrasekhar;L.M. Lunardi;A.H. Gnauck;D. Ritter

  • Compact Modeling and Comparative Analysis of Silicon-Chip Slow-Wave Transmission Lines With Slotted Bottom Metal Ground Planes

    A. Sayag;D. Ritter;D. Goren

  • Diffusive base transport in narrow base InP/Ga0.47In0.53As heterojunction bipolar transistors

    D. Ritter;R. A. Hamm;A. Feygenson;M. B. Panish

  • A thirty two element phased-array transceiver at 60GHz with RF-IF conversion block in 90nm flip chip CMOS process

    Emanuel Cohen;Claudio Jakobson;Shmuel Ravid;Dan Ritter

  • A peeling algorithm for extraction of the HBT small-signal equivalent circuit

    B. Sheinman;E. Wasige;M. Rudolph;R. Doerner

  • A single-stage three-terminal heterojunction bipolar transistor optoelectronic mixer

    Y. Betser;D. Ritter;C.P. Liu;A.J. Seed

Frequent Co-Authors

Morton B. Panish
Morton B. Panish Nokia (United States)
Gadi Eisenstein
Gadi Eisenstein Technion – Israel Institute of Technology
Meir Orenstein
Meir Orenstein Technion – Israel Institute of Technology
Ingmar Kallfass
Ingmar Kallfass University of Stuttgart
Vladimir G. Dubrovskii
Vladimir G. Dubrovskii Saint Petersburg State University
Henryk Temkin
Henryk Temkin Texas Tech University
Sethumadhavan Chandrasekhar
Sethumadhavan Chandrasekhar Nokia (United States)
Alwyn J. Seeds
Alwyn J. Seeds University College London
Boaz Pokroy
Boaz Pokroy Technion – Israel Institute of Technology
Leeor Kronik
Leeor Kronik Weizmann Institute of Science

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