The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Alfred Y. Cho sits on this spectrum.
This scientist: 774 publications — 96th percentile
96% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Alfred Y. Cho sits on this spectrum.
This scientist: 104 D-Index — 98th percentile
98% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Alfred Y. Cho is affiliated with Nokia in the United States and has contributed to the field of Materials Science, with particular focus on Materials Chemistry. Their work spans subfields including Electrical and Electronic Engineering as well as Renewable Energy, Sustainability and the Environment.
The research undertaken by Alfred Y. Cho explores several main topics such as 2D Materials and Applications, Graphene research and applications, MXene and MAX Phase Materials, Copper-based nanomaterials and applications, Gas Sensing Nanomaterials and Sensors, and Advanced Photocatalysis Techniques.
The scientist's recent publications include the following papers:
Alfred Y. Cho has collaborated with several co-authors, including Taekjib Choi, Jin Hong Kim, Sung Ryul Choi, Jun-Young Park, and Yoon-Uk Heo.
Their work has been published predominantly in the SSRN Electronic Journal, which accounts for their most frequent publication venue.
Notable awards received by Alfred Y. Cho include the US President's National Medal of Science in 1993, awarded for pioneering work in molecular beam epitaxy and the study of quantum phenomena, presented by President Clinton and Vice President Gore.
They were also named Fellow of the American Physical Society (APS) in 1983 with a citation recognizing the development of molecular beam epitaxial growth techniques that significantly advanced semiconductor physics and device development.
Mattias Beck;Jérôme Faist;Antoine Muller
Claire Gmachl;Federico Capasso;Deborah L Sivco;Alfred Y Cho
Claire Gmachl;Federico Capasso;E. E. Narimanov;Jens U. Nöckel
F. Capasso;K. Mohammed;A. Cho
Jérôme Faist;Federico Capasso;Carlo Sirtori;Deborah L. Sivco
Pochi Yeh;Amnon Yariv;A. Y. Cho
Jérome Faist;Claire Gmachl;Federico Capasso;Carlo Sirtori
K. Namjou;S. Cai;E. A. Whittaker;J. Faist
Jérôme Faist;Federico Capasso;Deborah L. Sivco;Albert L. Hutchinson
Federico Capasso;Claire Gmachl;Deborah L. Sivco;Alfred Y. Cho
Raffaele Colombelli;Raffaele Colombelli;Kartik Srinivasan;Mariano Troccoli;Oskar Painter
Federico Capasso;Carlo Sirtori;Jerome Faist;Deborah L. Sivco
C. Sirtori;F. Capasso;J. Faist;A.L. Hutchinson
Mikhail A. Belkin;Federico Capasso;Alexey Belyanin;Deborah L. Sivco
Claire F. Gmachl;Deborah L. Sivco;Raffaele Colombelli;Federico Capasso
J. P. Eisenstein;H. L. Stormer;V. Narayanamurti;A. Y. Cho
Claire F. Gmachl;Hock M. Ng;S. N.George Chu;Alfred Y. Cho
E. F. Schubert;N. E. J. Hunt;M. Micovic;R. J. Malik
Federico Capasso;Khalid Mohammed;Alfred Y. Cho
Jérôme Faist;Federico Capasso;Carlo Sirtori;Deborah L. Sivco
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