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Takashi Ohsawa

Takashi Ohsawa

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
5047
World Ranking
6013
National Ranking
258

Overview

Takashi Ohsawa is affiliated with Waseda University in Japan and has contributed significantly to research in the field of medicine, with a primary focus on surgery and orthopedics. Their work spans multiple subfields, including surgery, orthopedics and sports medicine, biomedical engineering, molecular biology, and rheumatology.

The scientist's research mainly addresses topics related to knee injuries and reconstruction techniques, total knee arthroplasty outcomes, sports injuries and prevention, shoulder injury and treatment, foot and ankle surgery, orthopedic infections and treatments, and tendon structure and treatment.

Frequent publication venues for Ohsawa include Knee Surgery Sports Traumatology Arthroscopy, where they have published multiple papers, as well as BMC Musculoskeletal Disorders, The Knee, Arthroscopy: The Journal of Arthroscopic and Related Surgery, and The American Journal of Sports Medicine.

Key recent papers authored or co-authored by Ohsawa include:

  • Patient-reported evaluation on giving way is important for return to preinjury activity level after Anterior Cruciate Ligament reconstruction, 2020, Knee Surgery Sports Traumatology Arthroscopy
  • Insufficient restoration of meniscal extrusion by transtibial pullout repair for medial meniscus posterior root tears, 2023, Knee Surgery Sports Traumatology Arthroscopy
  • Hallux valgus deformity and postural sway: a cross-sectional study, 2021, BMC Musculoskeletal Disorders
  • Medial meniscus extrusion as a predictor for a poor prognosis in patients with spontaneous osteonecrosis of the knee, 2021, The Knee
  • Sagittal Inclination Angle of Graft Is Associated With Knee Stability After Anatomic Anterior Cruciate Ligament Reconstruction, 2021, Arthroscopy: The Journal of Arthroscopic and Related Surgery

Ohsawa has collaborated frequently with other researchers, including Hirotaka Chikuda, Shogo Hashimoto, Ryota Takase, Hiroaki Omae, and Takuya Omodaka.

Best Publications

  • Memory design using one-transistor gain cell on SOI

    T. Ohsawa;K. Fujita;T. Higashi;Y. Iwata

  • Semiconductor memory device and method of manufacturing the same

    Yoshihisa Iwata;Takashi Ohsawa;Takashi Yamada

  • Semiconductor memory device having a floating storage bulk region capable of holding/emitting excessive majority carriers

    Takashi Ohsawa

  • Floating Body RAM Technology and its Scalability to 32nm Node and Beyond

    T. Shino;N. Kusunoki;T. Higashi;T. Ohsawa

  • Autonomous refresh of floating body cell (FBC)

    T. Ohsawa;R. Fukuda;T. Higashi;K. Fujita

  • Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and beyond

    Takeshi Hamamoto;Takashi Ohsawa

  • An experimental 2-bit/cell storage DRAM for macrocell or memory-on-logic application

    T. Furuyama;T. Ohsawa;Y. Nagahama;H. Tanaka

  • FBC (Floating Body Cell) for embedded DRAM on SOI

    K. Inoh;T. Shino;H. Yamada;H. Nakajima

  • DRAM having a power supply voltage lowering circuit

    Takashi Ohsawa

  • Semiconductor memory device and its manufacturing method

    Fumio Horiguchi;Takashi Ohsawa

  • An 18.5ns 128MB SOI DRAM with a floating body cell

    T. Ohsawa;K. Fujita;K. Hatsuda;T. Higashi

  • Semiconductor memory device for dynamically storing data with channel body of transistor used as storage node

    Takashi Yamada;Fumio Horiguchi;Takashi Ohsawa;Yoshihisa Iwata

  • A memory using one-transistor gain cell on SOI(FBC) with performance suitable for embedded DRAM's

    T. Ohsawa;T. Higashi;K. Fujita;T. Ikehashi

  • Semiconductor memory device and driving method of the same

    Fumiyoshi Matsuoka;Takashi Ohsawa

  • Highly scalable FBC (Floating Body Cell) with 25nm BOX structure for embedded DRAM applications

    T. Shino;I. Higashi;K. Fujita;T. Ohsawa

  • Fully-depleted FBC (floating body cell) with enlarged signal window and excellent logic process compatibility

    T. Shino;T. Higashi;N. Kusunoki;K. Fujita

  • A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating Scheme

    Takashi Ohsawa;Hiroki Koike;Sadahiko Miura;Hiroaki Honjo

  • Design of a 128-Mb SOI DRAM using the floating body cell (FBC)

    Takashi Ohsawa;Katsuyuki Fujita;Kosuke Hatsuda;Tomoki Higashi

  • A new on-chip converter for submicrometer high-density DRAMs

    T. Furuyama;Y. Watanabe;T. Ohsawa;S. Watanabe

  • Semiconductor storing device and semiconductor device

    Takashi Ohsawa

Frequent Co-Authors

Akihiro Nitayama
Akihiro Nitayama Toshiba (Japan)

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