John M. Poate

Research.com Recognitions

• 2015 - Fellow, National Academy of Inventors
• 2008 - Fellow of the Materials Research Society

Overview

Best Publications

• Thin Films—Interdiffusion and Reactions

  J. M. Poate;K. N. Tu;J. W. Mayor;Archibald L. Fripp

  1750
  Citations

• Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

  P. A. Stolk;H.-J. Gossmann;D. J. Eaglesham;D. C. Jacobson

  921
  Citations

• Laser Annealing of Semiconductors

  J. M. Poate;James W. Mayer

  800
  Citations

• Implantation and transient B diffusion in Si: The source of the interstitials

  D. J. Eaglesham;P. A. Stolk;H.‐J. Gossmann;J. M. Poate

  729
  Citations

• Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation

  Michael O. Thompson;G. J. Galvin;J. W. Mayer;P. S. Peercy

  685
  Citations

• Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon

  J. Michel;J. L. Benton;R. F. Ferrante;D. C. Jacobson

  581
  Citations

• Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-Ni Si 2 Epitaxial Structures

  R. T. Tung;J. M. Gibson;J. M. Poate

  575
  Citations

• Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

  E. P. Donovan;F. Spaepen;D. Turnbull;J. M. Poate

  532
  Citations

• Structural relaxation and defect annihilation in pure amorphous silicon

  S. Roorda;W. C. Sinke;J. M. Poate;D. C. Jacobson

  503
  Citations

• Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode

  B. Zheng;J. Michel;F. Y. G. Ren;L. C. Kimerling

  500
  Citations

• Heat of crystallization and melting point of amorphous silicon

  E. P. Donovan;F. Spaepen;D. Turnbull;J. M. Poate

  417
  Citations

• DENSITY OF AMORPHOUS SI

  J. S. Custer;Michael O. Thompson;D. C. Jacobson;J. M. Poate

  379
  Citations

• Ion beams in silicon processing and characterization

  E. Chason;S. T. Picraux;J. M. Poate;J. O. Borland

  368
  Citations

• Local structure of 1.54‐μm‐luminescence Er3+ implanted in Si

  D. L. Adler;D. C. Jacobson;D. J. Eaglesham;M. A. Marcus

  327
  Citations

• ''Sputtering'' of ice by MeV light ions

  W. L. Brown;L. J. Lanzerotti;J. M. Poate;W. M. Augustyniak

  320
  Citations

• Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser Irradiation

  Michael O. Thompson;J. W. Mayer;A. G. Cullis;H. C. Webber

  311
  Citations

• B diffusion and clustering in ion implanted Si: The role of B cluster precursors

  Lourdes Pelaz;M. Jaraiz;G. H. Gilmer;H. J. Gossmann

  285
  Citations

• Carbon incorporation in silicon for suppressing interstitial‐enhanced boron diffusion

  P. A. Stolk;D. J. Eaglesham;H.‐J. Gossmann;J. M. Poate

  281
  Citations

• Optical doping of waveguide materials by MeV Er implantation

  A. Polman;D. C. Jacobson;D. J. Eaglesham;R. C. Kistler

  250
  Citations

• Controlled atomic spontaneous emission from Er3+ in a transparent Si/SiO2 microcavity.

  A. M. Vredenberg;N. E. J. Hunt;E. F. Schubert;D. C. Jacobson

  248
  Citations

• Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures

  R. T. Tung;J. M. Gibson;J. M. Poate

  10
  Citations