What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Silicon
- Laser
J. M. Poate mostly deals with Silicon, Ion implantation, Analytical chemistry, Crystallography and Annealing.
His Silicon study improves the overall literature in Optoelectronics.
His research on Ion implantation also deals with topics like
- Dopant together with Nanotechnology,
- Deep-level transient spectroscopy and Atmospheric temperature range most often made with reference to Crystallographic defect.
His Analytical chemistry research includes elements of Amorphous solid, Microstructure, Sputtering and Intermetallic.
His Crystallography research incorporates elements of Molecular beam epitaxy, Epitaxy, Supersaturation, Molecular physics and Transmission electron microscopy.
His Annealing study incorporates themes from Doping and Superlattice.
His most cited work include:
- Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon (580 citations)
- Laser annealing of semiconductors (515 citations)
- Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation (465 citations)
What are the main themes of his work throughout his whole career to date?
His main research concerns Silicon, Analytical chemistry, Ion implantation, Annealing and Amorphous solid.
His Silicon research is multidisciplinary, relying on both Crystallography, Molecular physics, Doping and Epitaxy.
In his research, Metallurgy is intimately related to Laser, which falls under the overarching field of Analytical chemistry.
His Ion implantation study also includes fields such as
- Crystallographic defect which connect with Vacancy defect,
- Photoluminescence together with Luminescence.
In his study, which falls under the umbrella issue of Annealing, Microstructure is strongly linked to Transmission electron microscopy.
His studies deal with areas such as Crystallization, Chemical engineering, Amorphous silicon, Ion beam and Crystal as well as Amorphous solid.
He most often published in these fields:
- Silicon (38.04%)
- Analytical chemistry (37.32%)
- Ion implantation (30.07%)
What were the highlights of his more recent work (between 1992-2008)?
- Silicon (38.04%)
- Annealing (26.81%)
- Analytical chemistry (37.32%)
In recent papers he was focusing on the following fields of study:
The scientist’s investigation covers issues in Silicon, Annealing, Analytical chemistry, Ion implantation and Doping.
J. M. Poate combines subjects such as Crystallography, Crystallographic defect, Molecular physics, Thermal diffusivity and Dopant with his study of Silicon.
J. M. Poate works mostly in the field of Crystallography, limiting it down to topics relating to Condensed matter physics and, in certain cases, Microstructure.
His study in Annealing is interdisciplinary in nature, drawing from both Chemical physics, Amorphous silicon, Supersaturation, Transmission electron microscopy and Superlattice.
The Analytical chemistry study combines topics in areas such as Amorphous solid, Getter, Decaborane, Metallurgy and Laser.
His Ion implantation course of study focuses on Atomic physics and Ion beam.
Between 1992 and 2008, his most popular works were:
- Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon (580 citations)
- Implantation and transient B diffusion in Si: The source of the interstitials (465 citations)
- Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode (306 citations)
In his most recent research, the most cited papers focused on:
- Semiconductor
- Silicon
- Atom
J. M. Poate spends much of his time researching Silicon, Ion implantation, Annealing, Crystallography and Dopant.
His Silicon study combines topics from a wide range of disciplines, such as Secondary ion mass spectrometry, Doping, Crystallographic defect, Thermal diffusivity and Analytical chemistry.
His research integrates issues of Amorphous solid, Profilometer, Superlattice and Recrystallization in his study of Analytical chemistry.
The various areas that he examines in his Ion implantation study include Deep-level transient spectroscopy and Crystal.
In his research on the topic of Annealing, Activation energy, Boron concentration and Radiochemistry is strongly related with Transmission electron microscopy.
J. M. Poate has researched Crystallography in several fields, including Molecular physics, Condensed matter physics, Supersaturation and Electron beam processing.
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