World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
60
Citations
13514
World Ranking
7018
National Ranking
410

Shengqiang Zhou publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Shengqiang Zhou sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 448 publications — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Shengqiang Zhou D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Shengqiang Zhou sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 60 D-Index — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Shengqiang Zhou is affiliated with Helmholtz-Zentrum Dresden-Rossendorf in Germany. Their research spans several interconnected fields primarily within materials science and engineering, with a focus on the chemistry and physics of advanced materials.

The main fields of their work include:

  • Materials Science
  • Engineering

Within these domains, they have contributed extensively to particular subfields such as:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Biomedical Engineering

Their research topics cover a broad spectrum, with primary interests in:

  • Semiconductor materials and devices
  • 2D Materials and Applications
  • Photonic and Optical Devices
  • Silicon Nanostructures and Photoluminescence
  • Semiconductor materials and interfaces
  • ZnO doping and properties
  • MXene and MAX Phase Materials

Shengqiang Zhou has coauthored numerous publications with several frequent collaborators, including:

  • M. Helm
  • Sławomir Prucnal
  • René Hübner
  • Ulrich Kentsch
  • Mao Wang

Their research output appears in a variety of academic venues, highlighting their participation in both multidisciplinary and specialized journals. Notable venues with multiple publications include:

  • arXiv (Cornell University)
  • Applied Physics Letters
  • SSRN Electronic Journal
  • Small
  • Advanced Functional Materials

Among their recent papers are:

  • "Phthalocyanine-Based 2D Conjugated Metal-Organic Framework Nanosheets for High-Performance Micro-Supercapacitors," 2020, Advanced Functional Materials
  • "High-Mobility Semiconducting Two-Dimensional Conjugated Covalent Organic Frameworks with p-Type Doping," 2020, Journal of the American Chemical Society
  • "Ultrathin two-dimensional conjugated metal-organic framework single-crystalline nanosheets enabled by surfactant-assisted synthesis," 2020, Chemical Science
  • "Redox-Active Metaphosphate-Like Terminals Enable High-Capacity MXene Anodes for Ultrafast Na-Ion Storage," 2022, Advanced Materials
  • "Band transport by large Fröhlich polarons in MXenes," 2022, Nature Physics

Best Publications

  • Room temperature ferromagnetism in ZnO films due to defects

    Qingyu Xu;Heidemarie Schmidt;Shengqiang Zhou;Kay Potzger

  • A coronene-based semiconducting two-dimensional metal-organic framework with ferromagnetic behavior

    Renhao Dong;Zhitao Zhang;Diana C. Tranca;Shengqiang Zhou

  • Unveiling Electronic Properties in Metal-Phthalocyanine-Based Pyrazine-Linked Conjugated Two-Dimensional Covalent Organic Frameworks.

    Mingchao Wang;Marco Ballabio;Mao Wang;Hung Hsuan Lin

  • A bimodal soft electronic skin for tactile and touchless interaction in real time.

    Jin Ge;Xu Wang;Michael Drack;Oleksii Volkov

  • Origin of magnetic moments in defective TiO 2 single crystals

    Shengqiang Zhou (周生强);E. Čižmár;K. Potzger;M. Krause

  • Room temperature ferromagnetism in carbon-implanted ZnO

    Shengqiang Zhou;Qingyu Xu;Kay Potzger;Georg Talut

  • Crystallographically oriented Co and Ni nanocrystals inside ZnO formed by ion implantation and postannealing

    Shengqiang Zhou;K. Potzger;J. von Borany;R. Grötzschel

  • Room temperature ferromagnetism in carbon-implanted ZnO

    Shengqiang Zhou;Qingyu Xu;Kay Potzger;Georg Talut

  • Phthalocyanine‐Based 2D Conjugated Metal‐Organic Framework Nanosheets for High‐Performance Micro‐Supercapacitors

    Mingchao Wang;Huanhuan Shi;Panpan Zhang;Zhongquan Liao

  • High-Mobility Semiconducting Two-Dimensional Conjugated Covalent Organic Frameworks with p-Type Doping

    Mingchao Wang;Mao Wang;Hung-Hsuan Lin;Marco Ballabio

  • A semiconducting layered metal-organic framework magnet.

    Chongqing Yang;Chongqing Yang;Renhao Dong;Mao Wang;Petko St Petkov

  • Radiation tolerance of Cu/W multilayered nanocomposites

    Yuan Gao;Yuan Gao;Tengfei Yang;Jianming Xue;Sha Yan

  • Fe implanted ferromagnetic ZnO

    K. Potzger;Shengqiang Zhou;H. Reuther;A. Muecklich

  • Research on La3+–Co2+-substituted strontium ferrite magnets for high intrinsic coercive force

    Xiansong Liu;Xiansong Liu;Pablo Hernández-Gómez;Kai Huang;Shengqiang Zhou

  • Structural and magnetic properties of Mn-implanted Si

    Shengqiang Zhou;K. Potzger;Gufei Zhang;A. Mücklich

  • Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt

    Yao Shuai;Shengqiang Zhou;Danilo Bürger;Manfred Helm

  • Achievement of a table-like magnetocaloric effect in the dual-phase ErZn2/ErZn composite

    Lingwei Li;Ye Yuan;Yang Qi;Qiang Wang

  • LiPON thin films with high nitrogen content for application in lithium batteries and electrochromic devices prepared by RF magnetron sputtering

    Yurong Su;Jane Falgenhauer;Angelika Polity;Thomas Leichtweiß

  • Ultrathin two-dimensional conjugated metal-organic framework single-crystalline nanosheets enabled by surfactant-assisted synthesis.

    Zhiyong Wang;Zhiyong Wang;Gang Wang;Haoyuan Qi;Haoyuan Qi;Mao Wang

  • Ferromagnetic Gd-implanted ZnO single crystals

    K. Potzger;Shengqiang Zhou;F. Eichhorn;M. Helm

  • Critical size for exchange bias in ferromagnetic-antiferromagnetic particles

    AN Dobrynin;DN Ievlev;Kristiaan Temst;Peter Lievens

  • Fe implanted ferromagnetic ZnO

    K. Potzger;Shengqiang Zhou;H. Reuther;A. Mücklich

Frequent Co-Authors

Manfred Helm
Manfred Helm Helmholtz-Zentrum Dresden-Rossendorf
Heidemarie Schmidt
Heidemarie Schmidt Leibniz Institute of Photonic Technology
René Hübner
René Hübner Helmholtz-Zentrum Dresden-Rossendorf
Jürgen Fassbender
Jürgen Fassbender Helmholtz-Zentrum Dresden-Rossendorf
W. Skorupa
W. Skorupa Helmholtz-Zentrum Dresden-Rossendorf
Wanli Zhang
Wanli Zhang University of Electronic Science and Technology of China
Yu-Jia Zeng
Yu-Jia Zeng Shenzhen University
Marius Grundmann
Marius Grundmann Leipzig University
Michael Lorenz
Michael Lorenz Leipzig University
Xinliang Feng
Xinliang Feng TU Dresden

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