World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
42
Citations
6024
World Ranking
12603
National Ranking
685

Heidemarie Schmidt publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Heidemarie Schmidt sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 239 publications — 43rd percentile

43% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Heidemarie Schmidt D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Heidemarie Schmidt sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 42 D-Index — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Heidemarie Schmidt is affiliated with the Leibniz Institute of Photonic Technology in Germany and has a research focus centered on engineering and materials science. Their work spans multiple subfields including electrical and electronic engineering, materials chemistry, cellular and molecular neuroscience, biomedical engineering, and electronic, optical and magnetic materials.

The scientist's research encompasses a range of main topics such as advanced memory and neural computing, neuroscience and neural engineering, ferroelectric and negative capacitance devices, photoreceptor and optogenetics research, neural dynamics and brain function, physical unclonable functions (PUFs) and hardware security, and microfluidic and capillary electrophoresis applications.

Frequent publication venues reflect the interdisciplinary nature of their work and include:

  • arXiv (Cornell University)
  • Biosensors
  • IEEE Transactions on Nanotechnology
  • Scientific Reports
  • Journal of Applied Physics

Some notable recent papers authored or co-authored by Schmidt are:

  • "Low-power emerging memristive designs towards secure hardware systems for applications in internet of things," 2021, published in Nano Materials Science
  • "Synaptic Plasticity in Memristive Artificial Synapses and Their Robustness Against Noisy Inputs," 2021, published in Frontiers in Neuroscience
  • "Increased static dielectric constant in ZnMnO and ZnCoO thin films with bound magnetic polarons," 2020, published in Scientific Reports
  • "Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices," 2021, published in Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • "Review on Resistive Switching Devices Based on Multiferroic BiFeO3," 2023, published in Nanomaterials

Their work involves collaboration with several frequent co-authors, indicative of interdisciplinary collaboration and broad research networks. These co-authors include Nan Du, Xianyue Zhao, Daniel Blaschke, Ziang Chen, and Ilona Skorupa.

Best Publications

  • Room temperature ferromagnetism in ZnO films due to defects

    Qingyu Xu;Heidemarie Schmidt;Shengqiang Zhou;Kay Potzger

  • Photochemistry of colloidal semiconductors. Onset of light absorption as a function of size of extremely small CdS particles

    H. Weller;H.M. Schmidt;U. Koch;A. Fojtik

  • Origin of magnetic moments in defective TiO 2 single crystals

    Shengqiang Zhou (周生强);E. Čižmár;K. Potzger;M. Krause

  • Room temperature ferromagnetism in carbon-implanted ZnO

    Shengqiang Zhou;Qingyu Xu;Kay Potzger;Georg Talut

  • Room temperature ferromagnetism in carbon-implanted ZnO

    Shengqiang Zhou;Qingyu Xu;Kay Potzger;Georg Talut

  • Quantum size effects in semiconductor crystallites: Calculation of the energy spectrum for the confined exciton

    H.M. Schmidt;H. Weller

  • Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN

    Daniel Fritsch;Heidemarie Schmidt;Marius Grundmann

  • Defects in virgin and N + -implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy

    G. Brauer;W. Anwand;W. Skorupa;J. Kuriplach

  • Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt

    Yao Shuai;Shengqiang Zhou;Danilo Bürger;Manfred Helm

  • Exploiting Memristive BiFeO3 Bilayer Structures for Compact Sequential Logics

    Tiangui You;Yao Shuai;Wenbo Luo;Nan Du

  • Decisive role of oxygen vacancy in ferroelectric versus ferromagnetic Mn-doped BaTiO3 thin films

    Yao Shuai;Shengqiang Zhou;Danilo Bürger;Helfried Reuther

  • Band dispersion relations of zinc-blende and wurtzite InN

    Daniel Fritsch;Heidemarie Schmidt;Marius Grundmann

  • Room temperature ferromagnetism in Mn-doped ZnO films mediated by acceptor defects

    Qingyu Xu;Heidemarie Schmidt;Lars Hartmann;Holger Hochmuth

  • Decisive role of oxygen vacancy in ferroelectric vs. ferromagnetic Mn-doped BaTiO3 thin films

    Yao Shuai;Shengqiang Zhou;Danilo Bürger;Helfried Reuther

  • Anionic and cationic substitution in ZnO

    H. von Wenckstern;H. Schmidt;M. Brandt;A. Lajn

  • Metal-insulator transition in Co-doped ZnO : Magnetotransport properties

    Qingyu Xu;Lars Hartmann;Heidemarie Schmidt;Holger Hochmuth

  • Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristors.

    Tiangui You;Nan Du;Stefan Slesazeck;Thomas Mikolajick

  • Magnetic properties of ZnO nanopowders

    Qingyu Xu;Shengqiang Zhou;Heidemarie Schmidt

  • Pseudopotential band structures of rocksalt MgO, ZnO, and Mg1−xZnxO

    Daniel Fritsch;Heidemarie Schmidt;Marius Grundmann

  • Deep acceptor states in ZnO single crystals

    H. von Wenckstern;R. Pickenhain;H. Schmidt;M. Brandt

  • Spin manipulation in Co-doped ZnO.

    Qingyu Xu;Lars Hartmann;Shengqiang Zhou;Arndt Mcklich

  • Electrical and magnetic properties of RE-doped ZnO thin films (RE = Gd, Nd)

    Mariana Ungureanu;Heidemarie Schmidt;Qingyu Xu;Holger von Wenckstern

  • UV optical properties of ferromagnetic Mn-doped ZnO thin films grown by PLD

    Mariana Diaconu;Heidemarie Schmidt;Holger Hochmuth;Michael Lorenz

  • Defects in hydrothermally grown bulk ZnO

    H. von Wenckstern;H. Schmidt;M. Grundmann;M. W. Allen

  • s − d exchange interaction induced magnetoresistance in magnetic ZnO

    Qingyu Xu;Lars Hartmann;Heidemarie Schmidt;Holger Hochmuth

  • Tunneling-like magnetoresistance in bicrystal La0.8Sr0.2MnO3−δ thin films

    Unknown

  • Donor-like defects in ZnO substrate materials and ZnO thin films

    H. von Wenckstern;M. Brandt;H. Schmidt;G. Biehne

Frequent Co-Authors

Marius Grundmann
Marius Grundmann Leipzig University
Shengqiang Zhou
Shengqiang Zhou Helmholtz-Zentrum Dresden-Rossendorf
Manfred Helm
Manfred Helm Helmholtz-Zentrum Dresden-Rossendorf
Michael Lorenz
Michael Lorenz Leipzig University
Oliver G. Schmidt
Oliver G. Schmidt Chemnitz University of Technology
Pablo Esquinazi
Pablo Esquinazi Leipzig University
W. Skorupa
W. Skorupa Helmholtz-Zentrum Dresden-Rossendorf
Michael Siegel
Michael Siegel Karlsruhe Institute of Technology
Wanli Zhang
Wanli Zhang University of Electronic Science and Technology of China

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