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Materials Science

D-Index
42
Citations
6024
World Ranking
12607
National Ranking
687

Overview

Heidemarie Schmidt is affiliated with the Leibniz Institute of Photonic Technology in Germany and has a research focus centered on engineering and materials science. Their work spans multiple subfields including electrical and electronic engineering, materials chemistry, cellular and molecular neuroscience, biomedical engineering, and electronic, optical and magnetic materials.

The scientist's research encompasses a range of main topics such as advanced memory and neural computing, neuroscience and neural engineering, ferroelectric and negative capacitance devices, photoreceptor and optogenetics research, neural dynamics and brain function, physical unclonable functions (PUFs) and hardware security, and microfluidic and capillary electrophoresis applications.

Frequent publication venues reflect the interdisciplinary nature of their work and include:

  • arXiv (Cornell University)
  • Biosensors
  • IEEE Transactions on Nanotechnology
  • Scientific Reports
  • Journal of Applied Physics

Some notable recent papers authored or co-authored by Schmidt are:

  • "Low-power emerging memristive designs towards secure hardware systems for applications in internet of things," 2021, published in Nano Materials Science
  • "Synaptic Plasticity in Memristive Artificial Synapses and Their Robustness Against Noisy Inputs," 2021, published in Frontiers in Neuroscience
  • "Increased static dielectric constant in ZnMnO and ZnCoO thin films with bound magnetic polarons," 2020, published in Scientific Reports
  • "Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices," 2021, published in Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • "Review on Resistive Switching Devices Based on Multiferroic BiFeO3," 2023, published in Nanomaterials

Their work involves collaboration with several frequent co-authors, indicative of interdisciplinary collaboration and broad research networks. These co-authors include Nan Du, Xianyue Zhao, Daniel Blaschke, Ziang Chen, and Ilona Skorupa.

Best Publications

  • Room temperature ferromagnetism in ZnO films due to defects

    Qingyu Xu;Heidemarie Schmidt;Shengqiang Zhou;Kay Potzger

  • Photochemistry of colloidal semiconductors. Onset of light absorption as a function of size of extremely small CdS particles

    H. Weller;H.M. Schmidt;U. Koch;A. Fojtik

  • Origin of magnetic moments in defective TiO 2 single crystals

    Shengqiang Zhou (周生强);E. Čižmár;K. Potzger;M. Krause

  • Room temperature ferromagnetism in carbon-implanted ZnO

    Shengqiang Zhou;Qingyu Xu;Kay Potzger;Georg Talut

  • Room temperature ferromagnetism in carbon-implanted ZnO

    Shengqiang Zhou;Qingyu Xu;Kay Potzger;Georg Talut

  • Quantum size effects in semiconductor crystallites: Calculation of the energy spectrum for the confined exciton

    H.M. Schmidt;H. Weller

  • Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN

    Daniel Fritsch;Heidemarie Schmidt;Marius Grundmann

  • Defects in virgin and N + -implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy

    G. Brauer;W. Anwand;W. Skorupa;J. Kuriplach

  • Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt

    Yao Shuai;Shengqiang Zhou;Danilo Bürger;Manfred Helm

  • Exploiting Memristive BiFeO3 Bilayer Structures for Compact Sequential Logics

    Tiangui You;Yao Shuai;Wenbo Luo;Nan Du

  • Decisive role of oxygen vacancy in ferroelectric versus ferromagnetic Mn-doped BaTiO3 thin films

    Yao Shuai;Shengqiang Zhou;Danilo Bürger;Helfried Reuther

  • Band dispersion relations of zinc-blende and wurtzite InN

    Daniel Fritsch;Heidemarie Schmidt;Marius Grundmann

  • Room temperature ferromagnetism in Mn-doped ZnO films mediated by acceptor defects

    Qingyu Xu;Heidemarie Schmidt;Lars Hartmann;Holger Hochmuth

  • Decisive role of oxygen vacancy in ferroelectric vs. ferromagnetic Mn-doped BaTiO3 thin films

    Yao Shuai;Shengqiang Zhou;Danilo Bürger;Helfried Reuther

  • Anionic and cationic substitution in ZnO

    H. von Wenckstern;H. Schmidt;M. Brandt;A. Lajn

  • Metal-insulator transition in Co-doped ZnO : Magnetotransport properties

    Qingyu Xu;Lars Hartmann;Heidemarie Schmidt;Holger Hochmuth

  • Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristors.

    Tiangui You;Nan Du;Stefan Slesazeck;Thomas Mikolajick

  • Magnetic properties of ZnO nanopowders

    Qingyu Xu;Shengqiang Zhou;Heidemarie Schmidt

  • Pseudopotential band structures of rocksalt MgO, ZnO, and Mg1−xZnxO

    Daniel Fritsch;Heidemarie Schmidt;Marius Grundmann

  • Deep acceptor states in ZnO single crystals

    H. von Wenckstern;R. Pickenhain;H. Schmidt;M. Brandt

  • Spin manipulation in Co-doped ZnO.

    Qingyu Xu;Lars Hartmann;Shengqiang Zhou;Arndt Mcklich

  • Electrical and magnetic properties of RE-doped ZnO thin films (RE = Gd, Nd)

    Mariana Ungureanu;Heidemarie Schmidt;Qingyu Xu;Holger von Wenckstern

  • UV optical properties of ferromagnetic Mn-doped ZnO thin films grown by PLD

    Mariana Diaconu;Heidemarie Schmidt;Holger Hochmuth;Michael Lorenz

  • Defects in hydrothermally grown bulk ZnO

    H. von Wenckstern;H. Schmidt;M. Grundmann;M. W. Allen

  • s − d exchange interaction induced magnetoresistance in magnetic ZnO

    Qingyu Xu;Lars Hartmann;Heidemarie Schmidt;Holger Hochmuth

  • Tunneling-like magnetoresistance in bicrystal La0.8Sr0.2MnO3−δ thin films

    Unknown

  • Donor-like defects in ZnO substrate materials and ZnO thin films

    H. von Wenckstern;M. Brandt;H. Schmidt;G. Biehne

Frequent Co-Authors

Marius Grundmann
Marius Grundmann Leipzig University
Shengqiang Zhou
Shengqiang Zhou Helmholtz-Zentrum Dresden-Rossendorf
Manfred Helm
Manfred Helm Helmholtz-Zentrum Dresden-Rossendorf
Michael Lorenz
Michael Lorenz Leipzig University
Oliver G. Schmidt
Oliver G. Schmidt Chemnitz University of Technology
Pablo Esquinazi
Pablo Esquinazi Leipzig University
W. Skorupa
W. Skorupa Helmholtz-Zentrum Dresden-Rossendorf
Michael Siegel
Michael Siegel Karlsruhe Institute of Technology
Wanli Zhang
Wanli Zhang University of Electronic Science and Technology of China

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