Wolfgang Skorupa focuses on Annealing, Ion implantation, Analytical chemistry, Doping and Silicon. Wolfgang Skorupa has researched Annealing in several fields, including Magnetic semiconductor, Ferromagnetism, Crystallography, Germanium and Fluence. His studies in Ion implantation integrate themes in fields like Crystallographic defect, Transmission electron microscopy, Ion beam, Positron and Vacancy defect.
Wolfgang Skorupa combines subjects such as Rutherford backscattering spectrometry, Wafer, Wide-bandgap semiconductor and Flash-lamp with his study of Analytical chemistry. His biological study spans a wide range of topics, including Acceptor and Crystal. His Silicon study is focused on Optoelectronics in general.
Wolfgang Skorupa spends much of his time researching Ion implantation, Annealing, Analytical chemistry, Silicon and Optoelectronics. His study on Ion implantation also encompasses disciplines like
His research in Analytical chemistry intersects with topics in Rutherford backscattering spectrometry, Ion beam, Crystallization and Nanoclusters. His Silicon research incorporates elements of Epitaxy, Chemical engineering, Crystallographic defect, Molecular physics and Microstructure. His Optoelectronics research integrates issues from Nanotechnology, Electroluminescence and Silicon dioxide.
His primary scientific interests are in Annealing, Optoelectronics, Ion implantation, Silicon and Doping. The concepts of his Annealing study are interwoven with issues in Wafer, Chemical vapor deposition, Engineering physics and Flash-lamp. He regularly ties together related areas like Electroluminescence in his Optoelectronics studies.
His Ion implantation study integrates concerns from other disciplines, such as Nanotechnology, Epitaxy, Raman spectroscopy, Dopant and Photoluminescence. His Silicon study combines topics in areas such as Crystallography, Sheet resistance, Chemical engineering and Analytical chemistry. His studies deal with areas such as Thin film, Superconductivity, Sputter deposition and Germanium as well as Doping.
Wolfgang Skorupa mostly deals with Optoelectronics, Doping, Ion implantation, Silicon and Annealing. His study in Optoelectronics is interdisciplinary in nature, drawing from both Electroluminescence and Analytical chemistry. His research in Doping tackles topics such as Semiconductor which are related to areas like Indium and Flexible electronics.
His work carried out in the field of Ion implantation brings together such families of science as Nanoelectronics, Nanotechnology, Epitaxy, Band gap and Nitride. The various areas that Wolfgang Skorupa examines in his Silicon study include Sheet resistance, Passivation and Heterojunction. His Annealing study also includes fields such as
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Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers
L. Rebohle;J. von Borany;R. A. Yankov;W. Skorupa.
Applied Physics Letters (1997)
Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements
L. Rebohle;J. von Borany;H. Fröb;W. Skorupa.
Applied Physics B (2000)
Crystallographically oriented Co and Ni nanocrystals inside ZnO formed by ion implantation and postannealing
Shengqiang Zhou;K. Potzger;J. von Borany;R. Grötzschel.
Physical Review B (2008)
Amorphization and recrystallization of 6H‐SiC by ion‐beam irradiation
V. Heera;J. Stoemenos;R. Kögler;W. Skorupa.
Journal of Applied Physics (1995)
Defects in virgin and N + -implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy
G. Brauer;W. Anwand;W. Skorupa;J. Kuriplach.
Physical Review B (2006)
Room‐temperature, short‐wavelength (400–500 nm) photoluminescence from silicon‐implanted silicon dioxide films
W. Skorupa;R. A. Yankov;I. E. Tyschenko;H. Fröb.
Applied Physics Letters (1996)
Structural and magnetic properties of Mn-implanted Si
Shengqiang Zhou;K. Potzger;Gufei Zhang;A. Mücklich.
Physical Review B (2007)
Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices
Jiaming Sun;Wolfgang Skorupa;Thomas Dekorsy;Manfred Helm.
Journal of Applied Physics (2005)
Positron studies of defects in ion-implanted SiC.
G. Brauer;W. Anwand;P. G. Coleman;A. P. Knights.
Physical Review B (1996)
p-Type doping of SiC by high dose Al implantation—problems and progress
V. Heera;D. Panknin;W. Skorupa.
Applied Surface Science (2001)
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