D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 54 Citations 9,704 576 World Ranking 5984 National Ranking 371

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Silicon
  • Optoelectronics

Wolfgang Skorupa focuses on Annealing, Ion implantation, Analytical chemistry, Doping and Silicon. Wolfgang Skorupa has researched Annealing in several fields, including Magnetic semiconductor, Ferromagnetism, Crystallography, Germanium and Fluence. His studies in Ion implantation integrate themes in fields like Crystallographic defect, Transmission electron microscopy, Ion beam, Positron and Vacancy defect.

Wolfgang Skorupa combines subjects such as Rutherford backscattering spectrometry, Wafer, Wide-bandgap semiconductor and Flash-lamp with his study of Analytical chemistry. His biological study spans a wide range of topics, including Acceptor and Crystal. His Silicon study is focused on Optoelectronics in general.

His most cited work include:

  • Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers (180 citations)
  • Crystallographically oriented Co and Ni nanocrystals inside ZnO formed by ion implantation and postannealing (155 citations)
  • Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements (148 citations)

What are the main themes of his work throughout his whole career to date?

Wolfgang Skorupa spends much of his time researching Ion implantation, Annealing, Analytical chemistry, Silicon and Optoelectronics. His study on Ion implantation also encompasses disciplines like

  • Amorphous solid and related Recrystallization,
  • Vacancy defect that connect with fields like Atomic physics. His Annealing research is multidisciplinary, incorporating elements of Doping, Crystallography, Nanocrystal, Germanium and Flash-lamp.

His research in Analytical chemistry intersects with topics in Rutherford backscattering spectrometry, Ion beam, Crystallization and Nanoclusters. His Silicon research incorporates elements of Epitaxy, Chemical engineering, Crystallographic defect, Molecular physics and Microstructure. His Optoelectronics research integrates issues from Nanotechnology, Electroluminescence and Silicon dioxide.

He most often published in these fields:

  • Ion implantation (42.37%)
  • Annealing (41.85%)
  • Analytical chemistry (39.28%)

What were the highlights of his more recent work (between 2012-2020)?

  • Annealing (41.85%)
  • Optoelectronics (33.96%)
  • Ion implantation (42.37%)

In recent papers he was focusing on the following fields of study:

His primary scientific interests are in Annealing, Optoelectronics, Ion implantation, Silicon and Doping. The concepts of his Annealing study are interwoven with issues in Wafer, Chemical vapor deposition, Engineering physics and Flash-lamp. He regularly ties together related areas like Electroluminescence in his Optoelectronics studies.

His Ion implantation study integrates concerns from other disciplines, such as Nanotechnology, Epitaxy, Raman spectroscopy, Dopant and Photoluminescence. His Silicon study combines topics in areas such as Crystallography, Sheet resistance, Chemical engineering and Analytical chemistry. His studies deal with areas such as Thin film, Superconductivity, Sputter deposition and Germanium as well as Doping.

Between 2012 and 2020, his most popular works were:

  • Ultra-doped n-type germanium thin films for sensing in the mid-infrared (52 citations)
  • A review of thermal processing in the subsecond range: semiconductors and beyond (45 citations)
  • Room-temperature short-wavelength infrared Si photodetector (38 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Silicon
  • Atom

Wolfgang Skorupa mostly deals with Optoelectronics, Doping, Ion implantation, Silicon and Annealing. His study in Optoelectronics is interdisciplinary in nature, drawing from both Electroluminescence and Analytical chemistry. His research in Doping tackles topics such as Semiconductor which are related to areas like Indium and Flexible electronics.

His work carried out in the field of Ion implantation brings together such families of science as Nanoelectronics, Nanotechnology, Epitaxy, Band gap and Nitride. The various areas that Wolfgang Skorupa examines in his Silicon study include Sheet resistance, Passivation and Heterojunction. His Annealing study also includes fields such as

  • Flash-lamp that connect with fields like Photoluminescence,
  • Thin film which is related to area like Chemical vapor deposition.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers

L. Rebohle;J. von Borany;R. A. Yankov;W. Skorupa.
Applied Physics Letters (1997)

273 Citations

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

L. Rebohle;J. von Borany;H. Fröb;W. Skorupa.
Applied Physics B (2000)

224 Citations

Crystallographically oriented Co and Ni nanocrystals inside ZnO formed by ion implantation and postannealing

Shengqiang Zhou;K. Potzger;J. von Borany;R. Grötzschel.
Physical Review B (2008)

216 Citations

Amorphization and recrystallization of 6H‐SiC by ion‐beam irradiation

V. Heera;J. Stoemenos;R. Kögler;W. Skorupa.
Journal of Applied Physics (1995)

210 Citations

Defects in virgin and N + -implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy

G. Brauer;W. Anwand;W. Skorupa;J. Kuriplach.
Physical Review B (2006)

162 Citations

Room‐temperature, short‐wavelength (400–500 nm) photoluminescence from silicon‐implanted silicon dioxide films

W. Skorupa;R. A. Yankov;I. E. Tyschenko;H. Fröb.
Applied Physics Letters (1996)

154 Citations

Structural and magnetic properties of Mn-implanted Si

Shengqiang Zhou;K. Potzger;Gufei Zhang;A. Mücklich.
Physical Review B (2007)

153 Citations

Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices

Jiaming Sun;Wolfgang Skorupa;Thomas Dekorsy;Manfred Helm.
Journal of Applied Physics (2005)

144 Citations

Positron studies of defects in ion-implanted SiC.

G. Brauer;W. Anwand;P. G. Coleman;A. P. Knights.
Physical Review B (1996)

138 Citations

p-Type doping of SiC by high dose Al implantation—problems and progress

V. Heera;D. Panknin;W. Skorupa.
Applied Surface Science (2001)

137 Citations

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