World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
56
Citations
11805
World Ranking
8229
National Ranking
474

Overview

W. Skorupa is affiliated with the Helmholtz-Zentrum Dresden-Rossendorf in Germany. Their research primarily focuses on materials science, with particular emphasis on materials chemistry and electronic, optical, and magnetic materials.

Their recent publication record includes the paper titled Methane as a novel doping precursor for deposition of highly conductive ZnO thin films by magnetron sputtering, published in 2020 in the journal Vacuum.

Frequent co-authors collaborating with Skorupa include:

  • A. V. Vasin
  • A.V. Rusavsky
  • Eugene G. Bortchagovsky
  • Y. V. Gomeniuk
  • А.С. Ніколенко

They have contributed to topics including:

  • ZnO doping and properties
  • Copper-based nanomaterials and applications
  • Ga2O3 and related materials

Skorupa's work has appeared in the journal Vacuum, reflecting a contribution in that venue.

Best Publications

  • Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers

    L. Rebohle;J. von Borany;R. A. Yankov;W. Skorupa

  • Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

    L. Rebohle;J. von Borany;H. Fröb;W. Skorupa

  • Crystallographically oriented Co and Ni nanocrystals inside ZnO formed by ion implantation and postannealing

    Shengqiang Zhou;K. Potzger;J. von Borany;R. Grötzschel

  • Amorphization and recrystallization of 6H‐SiC by ion‐beam irradiation

    V. Heera;J. Stoemenos;R. Kögler;W. Skorupa

  • Defects in virgin and N + -implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy

    G. Brauer;W. Anwand;W. Skorupa;J. Kuriplach

  • Fe implanted ferromagnetic ZnO

    K. Potzger;Shengqiang Zhou;H. Reuther;A. Muecklich

  • Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices

    Jiaming Sun;Wolfgang Skorupa;Thomas Dekorsy;Manfred Helm

  • Structural and magnetic properties of Mn-implanted Si

    Shengqiang Zhou;K. Potzger;Gufei Zhang;A. Mücklich

  • Room‐temperature, short‐wavelength (400–500 nm) photoluminescence from silicon‐implanted silicon dioxide films

    W. Skorupa;R. A. Yankov;I. E. Tyschenko;H. Fröb

  • p-Type doping of SiC by high dose Al implantation—problems and progress

    V. Heera;D. Panknin;W. Skorupa

  • Positron studies of defects in ion-implanted SiC.

    G. Brauer;W. Anwand;P. G. Coleman;A. P. Knights

  • Ferromagnetic Gd-implanted ZnO single crystals

    K. Potzger;Shengqiang Zhou;F. Eichhorn;M. Helm

  • Identification of Zn-vacancy-hydrogen complexes in ZnO single crystals: A challenge to positron annihilation spectroscopy

    G. Brauer;W. Anwand;D. Grambole;J. Grenzer

  • Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films

    J. von Borany;R. Grötzschel;K. H. Heinig;A. Markwitz

  • Superconducting state in a gallium-doped germanium layer at low temperatures.

    T. Herrmannsdörfer;V. Heera;O. Ignatchik;M. Uhlarz

  • Density and structural changes in SiC after amorphization and annealing

    V. Heera;F. Prokert;N. Schell;H. Seifarth

  • Room-temperature short-wavelength infrared Si photodetector

    Yonder Berencén;Slawomir Prucnal;Fang Liu;Ilona Skorupa

  • Advanced Thermal Processing of Ultrashallow Implanted Junctions Using Flash Lamp Annealing

    Wolfgang Skorupa;Thoralf Gebel;Rossen A. Yankov;Silke Paul

  • VISIBLE AND NEAR-INFRARED LUMINESCENCE FROM SILICON NANOSTRUCTURES FORMED BY ION IMPLANTATION AND PULSE ANNEALING

    G.A. Kachurin;I.E. Tyschenko;K.S. Zhuravlev;N.A. Pazdnikov

  • A review of thermal processing in the subsecond range: semiconductors and beyond

    Lars Rebohle;Slawomir Prucnal;Wolfgang Skorupa

  • ION-BEAM SYNTHESIS OF AMORPHOUS SIC FILMS : STRUCTURAL ANALYSIS AND RECRYSTALLIZATION

    C. Serre;L. Calvo‐Barrio;A. Pérez‐Rodríguez;A. Romano‐Rodríguez

Frequent Co-Authors

Alejandro Pérez-Rodríguez
Alejandro Pérez-Rodríguez University of Barcelona
Shengqiang Zhou
Shengqiang Zhou Helmholtz-Zentrum Dresden-Rossendorf
Joan Ramon Morante
Joan Ramon Morante Catalonia Institute for Energy Research
Albert Romano-Rodriguez
Albert Romano-Rodriguez University of Barcelona
Jürgen Fassbender
Jürgen Fassbender Helmholtz-Zentrum Dresden-Rossendorf
Peter Werner
Peter Werner Max Planck Society
Aleksandra B. Djurišić
Aleksandra B. Djurišić University of Hong Kong
Karl Leo
Karl Leo TU Dresden
Michael Lorenz
Michael Lorenz Leipzig University
Richard A. McMahon
Richard A. McMahon University of Warwick

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing W. Skorupa

Trending Scientists

Recently Published Articles