2026 Klaus Thonke: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	43	12302	11897	671	650	295	7411

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

12302

11897

671

650

295

7411

Overview

Klaus Thonke is affiliated with the University of Ulm in Germany and has contributed extensively to research in materials science, engineering, and physics. Their primary research interests focus on semiconductor materials and devices, particularly GaN-based and ZnO-based compounds.

The main fields of study covered by Klaus Thonke include:

Materials Science
Engineering
Physics and Astronomy

Within these fields, their subfields of study encompass materials chemistry, condensed matter physics, electrical and electronic engineering, electronic, optical and magnetic materials, and biomedical engineering.

The scientist's main research topics include:

GaN-based semiconductor devices and materials
ZnO doping and properties
Ga2O3 and related materials
Gas Sensing Nanomaterials and Sensors
Advanced Chemical Sensor Technologies
Analytical Chemistry and Sensors
Semiconductor materials and devices

Klaus Thonke has authored publications in various recognized journals. Frequent publication venues for their work are:

Journal of Applied Physics
Crystal Growth & Design
Nanotechnology
Journal of Physics D Applied Physics
Sensors

Notable recent papers include:

"H₂S sensing for breath analysis with Au functionalized ZnO nanowires," 2021, Nanotechnology
"High-Quality ZnO Layers Grown by CVD on Sapphire Substrates with an AlN Nucleation Layer," 2020, Crystal Growth & Design
"Epitaxial ZnO Layer Growth on Si(111) Substrates with an Intermediate AlN Nucleation Layer by Methane-Based Chemical Vapor Deposition," 2020, Crystal Growth & Design
"Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (112ˉ0) GaN," 2020, Journal of Physics D Applied Physics
"Fe-Li complex emission in ZnO," 2021, Journal of Applied Physics

Collaboration plays a significant role in their work, with frequent co-authors including:

Raphael Müller
Florian Huber
U. Herr
A. Kaiser
Martin Mangold

Best Publications

Donor–acceptor pair transitions in ZnO substrate material

K. Thonke;Th. Gruber;N. Teofilov;R. Schönfelder

361
Citations
Stacking fault related 3.31 − eV luminescence at 130 − meV acceptors in zinc oxide

M. Schirra;R. Schneider;A. Reiser;G. M. Prinz

320
Citations
Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

K. Kornitzer;T. Ebner;K. Thonke;R. Sauer

310
Citations
High-excitation and high-resolution photoluminescence spectra of bulk AlN

Martin Feneberg;Robert A. R. Leute;Benjamin Neuschl;Klaus Thonke

206
Citations
The boron acceptor in diamond

Klaus Thonke

199
Citations
Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

R. Dalmau;B. Moody;R. Schlesser;S. Mita

188
Citations
Polarization fields of III-nitrides grown in different crystal orientations

M Feneberg;K Thonke

146
Citations
Nanoporous Gold Films Created Using Templates Formed from Self‐Assembled Structures of Inorganic–Block Copolymer Micelles

Michael Haupt;Stephan Miller;Roman Glass;Marco Arnold

106
Citations
Ultraviolet-emitting ZnO nanowhiskers prepared by a vapor transport process on prestructured surfaces with self-assembled polymers

M. Haupt;A. Ladenburger;R. Sauer;K. Thonke

103
Citations
Bright semipolar GaInN∕GaN blue light emitting diode on side facets of selectively grown GaN stripes

Thomas Wunderer;Peter Brückner;Barbara Neubert;Ferdinand Scholz

98
Citations
OPTICAL EVIDENCE FOR 630-MEV PHOSPHORUS DONOR IN SYNTHETIC DIAMOND

Unknown

96
Citations
On excitation and decay mechanisms of the Yb3+ luminescence in InP

K Thonke;K Pressel;G Bohnert;A Stapor

93
Citations
Coupled plasmon–LO-phonon modes in Ga 1 − x Mn x As

W. Limmer;M. Glunk;S. Mascheck;A. Koeder

90
Citations
Piezoelectric fields in GaInN∕GaN quantum wells on different crystal facets

M. Feneberg;F. Lipski;R. Sauer;K. Thonke

89
Citations
Direct observation of band‐edge luminescence and alloy luminescence from ultrametastable silicon‐germanium alloy layers

J. Spitzer;K. Thonke;R. Sauer;H. Kibbel

86
Citations
Anisotropic absorption and emission of bulk(11¯00)AlN

Martin Feneberg;Maria Fatima Romero;Marcus Röppischer;Christoph Cobet

86
Citations
Three‐dimensional GaN for semipolar light emitters

T. Wunderer;M. Feneberg;M. Feneberg;F. Lipski;J. Wang

85
Citations
Mahan excitons in degenerate wurtzite InN: Photoluminescence spectroscopy and reflectivity measurements

Martin Feneberg;Jürgen Däubler;Klaus Thonke;Rolf Sauer

85
Citations
Optimization of nucleation and buffer layer growth for improved GaN quality

J. Hertkorn;P. Brückner;S.B. Thapa;T. Wunderer

85
Citations
Lasing dynamics in single ZnO nanorods.

Johannes Fallert;Felix Stelzl;Huijuan Zhou;Anton Reiser

82
Citations
Electron-hole drops in synthetic diamond

K. Thonke;R. Schliesing;N. Teofilov;H. Zacharias

80
Citations
Semiconductor nanostructures defined with self-organizing polymers

M. Haupt;S. Miller;A. Ladenburger;R. Sauer

80
Citations
New class of related optical defects in silicon implanted with the noble gases He, Ne, Ar, Kr, and Xe

N. Bürger;K. Thonke;R. Sauer;G. Pensl

75
Citations