World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
57
Citations
8609
World Ranking
2016
National Ranking
789

Materials Science

D-Index
57
Citations
8827
World Ranking
8100
National Ranking
1998

Overview

Erhard Kohn is affiliated with North Carolina State University in the United States. Their research spans several fields, primarily focusing on physics, engineering, and materials science. The subfields of study connected to their work include condensed matter physics, electrical and electronic engineering, electronic, optical and magnetic materials, materials chemistry, and atomic and molecular physics and optics.

The main research topics associated with Kohn involve GaN-based semiconductor devices and materials, semiconductor materials and devices, Ga2O3 and related materials, silicon carbide semiconductor technologies, semiconductor materials and interfaces, ZnO doping and properties, and photocathodes and microchannel plates.

Kohn has contributed extensively to scientific literature, publishing numerous papers. Recent selected publications include:

  • High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates, 2020, Applied Physics Letters
  • Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates, 2022, Applied Physics Letters
  • Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing, 2022, Applied Physics Express
  • Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing, 2023, IEEE Transactions on Electron Devices
  • Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN, 2021, Applied Physics Letters

Kohn's frequent coauthors include Dolar Khachariya, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis, and Pramod Reddy.

Their work has been published in well-established venues such as Applied Physics Letters, Applied Physics Express, Journal of Applied Physics, ECS Meeting Abstracts, and IEEE Transactions on Electron Devices. The distribution of publications across these outlets is notably concentrated in Applied Physics Letters and Applied Physics Express.

Best Publications

  • Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs

    I. Daumiller;C. Kirchner;M. Kamp;K.J. Ebeling

  • Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?

    F. Medjdoub;J.-F. Carlin;M. Gonschorek;E. Feltin

  • MOVPE growth of GaN on Si(1 1 1) substrates

    Armin Dadgar;M. Poschenrieder;J. Bläsing;O. Contreras

  • Diamond MEMS — a new emerging technology

    E Kohn;P Gluche;M Adamschik

  • High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

    A. Dadgar;F. Schulze;J. Bläsing;A. Diez

  • High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition

    G. Höck;E. Kohn;C. Rosenblad;H. von Känel

  • Testing the Temperature Limits of GaN-Based HEMT Devices

    David Maier;Mohammed Alomari;Nicolas Grandjean;Jean-Francois Carlin

  • Diamond power devices. Concepts and limits

    A. Denisenko;E. Kohn

  • Large signal frequency dispersion of AlGaN/GaN heterostructure field effect transistors

    E. Kohn;I. Daumiller;P. Schmid;N.X. Nguyen

  • Barrier-Layer Scaling of InAlN/GaN HEMTs

    F. Medjdoub;M. Alomari;J.-F. Carlin;M. Gonschorek

  • Diamond field effect transistors—concepts and challenges

    A. Aleksov;M. Kubovic;N. Kaeb;U. Spitzberg

  • Current instabilities in GaN-based devices

    I. Daumiller;D. Theron;C. Gaquiere;A. Vescan

  • Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties

    Julian Anaya;Stefano Rossi;Mohammed Alomari;Erhard Kohn

  • Piezoelectric GaN sensor structures

    T. Zimmermann;M. Neuburger;P. Benkart;F.J. Hernandez-Guillen

  • InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment

    D. Maier;M. Alomari;N. Grandjean;J. Carlin

  • Carrier mobilities in modulation doped Si1−xGex heterostructures with respect to FET applications

    G Höck;M Glück;T Hackbarth;H. J Herzog

  • Diamond surface-channel FET structure with 200 V breakdown voltage

    P. Gluche;A. Aleksov;A. Vescan;W. Ebert

  • Hypothesis on the conductivity mechanism in hydrogen terminated diamond films

    A. Denisenko;A. Aleksov;A. Pribil;P. Gluche

  • 3D chip stack technology using through-chip interconnects

    P. Benkart;A. Kaiser;A. Munding;M. Bschorr

  • Status of the Emerging InAlN/GaN Power HEMT Technology

    F. Medjdoub;J.F. Carlin;C. Gaquière;N. Grandjean

Frequent Co-Authors

Nicolas Grandjean
Nicolas Grandjean École Polytechnique Fédérale de Lausanne
Andrei Vescan
Andrei Vescan RWTH Aachen University
Christophe Gaquiere
Christophe Gaquiere University of Lille
Alois Krost
Alois Krost Otto-von-Guericke University Magdeburg
Makoto Kasu
Makoto Kasu Saga University
Armin Dadgar
Armin Dadgar Otto-von-Guericke University Magdeburg
John Robertson
John Robertson University of Cambridge
Ute Kaiser
Ute Kaiser University of Ulm
Hiroshi Kawarada
Hiroshi Kawarada Waseda University

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