What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Optoelectronics
- Electrical engineering
His main research concerns Optoelectronics, Diamond, Heterojunction, Field-effect transistor and Doping.
Erhard Kohn is interested in Wide-bandgap semiconductor, which is a branch of Optoelectronics.
His Diamond study incorporates themes from Schottky diode, Diode, Breakdown voltage and Thin film.
The various areas that Erhard Kohn examines in his Heterojunction study include Metalorganic vapour phase epitaxy and Electron mobility.
His studies in Field-effect transistor integrate themes in fields like Gate oxide and Epitaxy.
He works mostly in the field of Doping, limiting it down to topics relating to Modulation and, in certain cases, MISFET, Alloy and Diffraction.
His most cited work include:
- Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs (150 citations)
- MOVPE growth of GaN on Si(1 1 1) substrates (146 citations)
- Current instabilities in GaN-based devices (135 citations)
What are the main themes of his work throughout his whole career to date?
His scientific interests lie mostly in Optoelectronics, Diamond, Field-effect transistor, Doping and Analytical chemistry.
His research in Optoelectronics intersects with topics in High-electron-mobility transistor and Electrical engineering.
The Diamond study combines topics in areas such as Substrate, Chemical vapor deposition, Nanotechnology and Silicon.
Erhard Kohn has researched Field-effect transistor in several fields, including Layer, Passivation and Gallium arsenide.
His Doping research is multidisciplinary, incorporating perspectives in Acceptor and Electronic engineering.
His Analytical chemistry research includes themes of Electrolyte, Electrochemistry and Dielectric.
He most often published in these fields:
- Optoelectronics (70.85%)
- Diamond (49.45%)
- Field-effect transistor (21.77%)
What were the highlights of his more recent work (between 2008-2017)?
- Optoelectronics (70.85%)
- Diamond (49.45%)
- Analytical chemistry (15.87%)
In recent papers he was focusing on the following fields of study:
His primary areas of study are Optoelectronics, Diamond, Analytical chemistry, Nanotechnology and High-electron-mobility transistor.
His Optoelectronics research is multidisciplinary, relying on both Transistor, Gallium nitride and Passivation.
His research integrates issues of Thin film, Thermal conductivity, Chemical vapor deposition and X-ray photoelectron spectroscopy in his study of Diamond.
His study in Analytical chemistry is interdisciplinary in nature, drawing from both Dielectric spectroscopy, Electrochemistry, Electrolyte and ISFET.
His biological study spans a wide range of topics, including Amperometry, Microelectrode and Electrical resistivity and conductivity.
He combines subjects such as Ohmic contact and Microwave applications with his study of High-electron-mobility transistor.
Between 2008 and 2017, his most popular works were:
- Testing the Temperature Limits of GaN-Based HEMT Devices (89 citations)
- InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment (57 citations)
- InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess (55 citations)
In his most recent research, the most cited papers focused on:
- Semiconductor
- Electrical engineering
- Transistor
Erhard Kohn spends much of his time researching Optoelectronics, Diamond, Analytical chemistry, Sapphire and High-electron-mobility transistor.
His Optoelectronics research incorporates themes from Field-effect transistor, Transistor and Transconductance.
His Field-effect transistor research is multidisciplinary, incorporating elements of Acceptor and Passivation.
He interconnects Thin film, Thermal conductivity, Optics and X-ray photoelectron spectroscopy in the investigation of issues within Diamond.
His research investigates the link between Analytical chemistry and topics such as Oxide that cross with problems in Band bending, Dielectric spectroscopy, Transmission electron microscopy, Layer and Molecular beam epitaxy.
His Wide-bandgap semiconductor study combines topics from a wide range of disciplines, such as Cutoff frequency, Single crystal and Algan gan.
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