World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
57
Citations
8609
World Ranking
2016
National Ranking
790

Materials Science

D-Index
57
Citations
8827
World Ranking
8098
National Ranking
1996

Erhard Kohn publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Erhard Kohn sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 305 publications — 58th percentile

58% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Erhard Kohn D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Erhard Kohn sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 57 D-Index — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Erhard Kohn is affiliated with North Carolina State University in the United States. Their research spans several fields, primarily focusing on physics, engineering, and materials science. The subfields of study connected to their work include condensed matter physics, electrical and electronic engineering, electronic, optical and magnetic materials, materials chemistry, and atomic and molecular physics and optics.

The main research topics associated with Kohn involve GaN-based semiconductor devices and materials, semiconductor materials and devices, Ga2O3 and related materials, silicon carbide semiconductor technologies, semiconductor materials and interfaces, ZnO doping and properties, and photocathodes and microchannel plates.

Kohn has contributed extensively to scientific literature, publishing numerous papers. Recent selected publications include:

  • High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates, 2020, Applied Physics Letters
  • Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates, 2022, Applied Physics Letters
  • Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing, 2022, Applied Physics Express
  • Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing, 2023, IEEE Transactions on Electron Devices
  • Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN, 2021, Applied Physics Letters

Kohn's frequent coauthors include Dolar Khachariya, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis, and Pramod Reddy.

Their work has been published in well-established venues such as Applied Physics Letters, Applied Physics Express, Journal of Applied Physics, ECS Meeting Abstracts, and IEEE Transactions on Electron Devices. The distribution of publications across these outlets is notably concentrated in Applied Physics Letters and Applied Physics Express.

Best Publications

  • Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs

    I. Daumiller;C. Kirchner;M. Kamp;K.J. Ebeling

  • Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?

    F. Medjdoub;J.-F. Carlin;M. Gonschorek;E. Feltin

  • MOVPE growth of GaN on Si(1 1 1) substrates

    Armin Dadgar;M. Poschenrieder;J. Bläsing;O. Contreras

  • Diamond MEMS — a new emerging technology

    E Kohn;P Gluche;M Adamschik

  • High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

    A. Dadgar;F. Schulze;J. Bläsing;A. Diez

  • High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition

    G. Höck;E. Kohn;C. Rosenblad;H. von Känel

  • Testing the Temperature Limits of GaN-Based HEMT Devices

    David Maier;Mohammed Alomari;Nicolas Grandjean;Jean-Francois Carlin

  • Diamond power devices. Concepts and limits

    A. Denisenko;E. Kohn

  • Large signal frequency dispersion of AlGaN/GaN heterostructure field effect transistors

    E. Kohn;I. Daumiller;P. Schmid;N.X. Nguyen

  • Barrier-Layer Scaling of InAlN/GaN HEMTs

    F. Medjdoub;M. Alomari;J.-F. Carlin;M. Gonschorek

  • Diamond field effect transistors—concepts and challenges

    A. Aleksov;M. Kubovic;N. Kaeb;U. Spitzberg

  • Current instabilities in GaN-based devices

    I. Daumiller;D. Theron;C. Gaquiere;A. Vescan

  • Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties

    Julian Anaya;Stefano Rossi;Mohammed Alomari;Erhard Kohn

  • Piezoelectric GaN sensor structures

    T. Zimmermann;M. Neuburger;P. Benkart;F.J. Hernandez-Guillen

  • InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment

    D. Maier;M. Alomari;N. Grandjean;J. Carlin

  • Carrier mobilities in modulation doped Si1−xGex heterostructures with respect to FET applications

    G Höck;M Glück;T Hackbarth;H. J Herzog

  • Diamond surface-channel FET structure with 200 V breakdown voltage

    P. Gluche;A. Aleksov;A. Vescan;W. Ebert

  • Hypothesis on the conductivity mechanism in hydrogen terminated diamond films

    A. Denisenko;A. Aleksov;A. Pribil;P. Gluche

  • 3D chip stack technology using through-chip interconnects

    P. Benkart;A. Kaiser;A. Munding;M. Bschorr

  • Status of the Emerging InAlN/GaN Power HEMT Technology

    F. Medjdoub;J.F. Carlin;C. Gaquière;N. Grandjean

Frequent Co-Authors

Nicolas Grandjean
Nicolas Grandjean École Polytechnique Fédérale de Lausanne
Andrei Vescan
Andrei Vescan RWTH Aachen University
Christophe Gaquiere
Christophe Gaquiere University of Lille
Alois Krost
Alois Krost Otto-von-Guericke University Magdeburg
Makoto Kasu
Makoto Kasu Saga University
Armin Dadgar
Armin Dadgar Otto-von-Guericke University Magdeburg
John Robertson
John Robertson University of Cambridge
Ute Kaiser
Ute Kaiser University of Ulm
Hiroshi Kawarada
Hiroshi Kawarada Waseda University

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