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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
4574
World Ranking
5405
National Ranking
153

Overview

Andrei Vescan is affiliated with RWTH Aachen University in Germany. Their research spans multiple areas within materials science and engineering, with a focus on nanomaterials and semiconductor devices.

Their work addresses interdisciplinary fields including:

  • Materials Science
  • Engineering

Within these broader fields, Vescan has contributed to subfields such as:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Biomedical Engineering

Key topics in their research portfolio include:

  • 2D Materials and Applications
  • Perovskite Materials and Applications
  • MXene and MAX Phase Materials
  • GaN-based semiconductor devices and materials
  • Graphene research and applications
  • Semiconductor materials and devices
  • Ga2O3 and related materials

Andrei Vescan's recent papers span from 2020 to 2022 and cover advancements in flexible photodetectors, light-emitting devices, and semiconductor electronics. Notable publications include:

  • Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS2, 2020, ACS Photonics
  • Flexible Large-Area Light-Emitting Devices Based on WS2 Monolayers, 2020, Advanced Optical Materials
  • Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs, 2020, IEEE Transactions on Electron Devices
  • Zero-Bias Power-Detector Circuits based on MoS2 Field-Effect Transistors on Wafer-Scale Flexible Substrates, 2022, Advanced Materials
  • Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures, 2020, AIP Advances

Vescan frequently publishes in venues such as:

  • MRS Advances
  • arXiv (Cornell University)
  • IEEE Transactions on Electron Devices
  • ACS Applied Materials & Interfaces
  • ACS Photonics

Collaborations are a significant aspect of Vescan's research output. Frequent co-authors include:

  • H. Kalisch
  • M. Heuken
  • Annika Grundmann
  • Max C. Lemme
  • Amir Ghiami

Best Publications

  • 12 W/mm AlGaN-GaN HFETs on silicon substrates

    J.W. Johnson;E.L. Piner;A. Vescan;R. Therrien

  • Gallium nitride materials device containing electrode defining layer and methods for forming the same

    Vescan Andrei;D Brown Jeffrey;Jerry W Johnson;Robert J Therrien

  • AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon ( 1 1 1 ) substrates

    J.D Brown;Ric Borges;Edwin Piner;Andrei Vescan

  • Current instabilities in GaN-based devices

    I. Daumiller;D. Theron;C. Gaquiere;A. Vescan

  • Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

    R. Stoklas;D. Gregušová;J. Novák;A. Vescan

  • Diamond surface-channel FET structure with 200 V breakdown voltage

    P. Gluche;A. Aleksov;A. Vescan;W. Ebert

  • Heat-spreading diamond films for GaN-based high-power transistor devices

    M. Seelmann-Eggebert;P. Meisen;F. Schaudel;P. Koidl

  • Very high temperature operation of diamond Schottky diode

    A. Vescan;I. Daumiller;P. Gluche;W. Ebert

  • Diamond junction FETs based on δ-doped channels

    A Aleksov;A Vescan;M Kunze;P Gluche

  • Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces

    B Reuters;H Hahn;A Pooth;B Holländer

  • High temperature, high voltage operation of diamond Schottky diode

    A. Vescan;I. Daumiller;P. Gluche;W. Ebert

  • Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

    Herwig Hahn;Gerrit Lükens;Nico Ketteniss;Holger Kalisch

  • p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

    Herwig Hahn;Benjamin Reuters;Alexander Pooth;Bernd Hollander

  • Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates

    N Ketteniss;L Rahimzadeh Khoshroo;M Eickelkamp;M Heuken

  • Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS2

    Daniel S. Schneider;Annika Grundmann;Andreas Bablich;Vikram Passi

  • Material, process, and device development of GaN-based HFETs on silicon substrates

    J. W. Johnson;J. Gao;K. Lucht;J. Williamson

  • The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices

    H Yacoub;D Fahle;M Finken;H Hahn

  • Chemical Vapor Deposition of Organic-Inorganic Bismuth-Based Perovskite Films for Solar Cell Application.

    S. Sanders;D. Stümmler;P. Pfeiffer;N. Ackermann

  • Diamond diodes and transistors

    A Aleksov;A Denisenko;M Kunze;A Vescan

  • High-temperature, high-voltage operation of pulse-doped diamond MESFET

    A. Vescan;P. Gluche;W. Ebert;E. Kohn

  • Small signal and power measurements of AlGaN/GaN HEMT with SiN passivation

    Jong-Soo Lee;A. Vescan;A. Wieszt;R. Dietrich

Frequent Co-Authors

Erhard Kohn
Erhard Kohn North Carolina State University
Jerry W. Johnson
Jerry W. Johnson IQE (United Kingdom)
Edwin L. Piner
Edwin L. Piner Texas State University
Horst Hahn
Horst Hahn Karlsruhe Institute of Technology
Joan M. Redwing
Joan M. Redwing Pennsylvania State University
Joachim Knoch
Joachim Knoch RWTH Aachen University
Oliver Ambacher
Oliver Ambacher University of Freiburg
Kevin J. Linthicum
Kevin J. Linthicum MACOM (United States)
Joachim N. Burghartz
Joachim N. Burghartz University of Stuttgart
Max C. Lemme
Max C. Lemme RWTH Aachen University

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