World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
4574
World Ranking
5405
National Ranking
152

Andrei Vescan publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Andrei Vescan sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 234 publications — 40th percentile

40% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Andrei Vescan D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Andrei Vescan sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Andrei Vescan is affiliated with RWTH Aachen University in Germany. Their research spans multiple areas within materials science and engineering, with a focus on nanomaterials and semiconductor devices.

Their work addresses interdisciplinary fields including:

  • Materials Science
  • Engineering

Within these broader fields, Vescan has contributed to subfields such as:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Biomedical Engineering

Key topics in their research portfolio include:

  • 2D Materials and Applications
  • Perovskite Materials and Applications
  • MXene and MAX Phase Materials
  • GaN-based semiconductor devices and materials
  • Graphene research and applications
  • Semiconductor materials and devices
  • Ga2O3 and related materials

Andrei Vescan's recent papers span from 2020 to 2022 and cover advancements in flexible photodetectors, light-emitting devices, and semiconductor electronics. Notable publications include:

  • Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS2, 2020, ACS Photonics
  • Flexible Large-Area Light-Emitting Devices Based on WS2 Monolayers, 2020, Advanced Optical Materials
  • Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs, 2020, IEEE Transactions on Electron Devices
  • Zero-Bias Power-Detector Circuits based on MoS2 Field-Effect Transistors on Wafer-Scale Flexible Substrates, 2022, Advanced Materials
  • Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures, 2020, AIP Advances

Vescan frequently publishes in venues such as:

  • MRS Advances
  • arXiv (Cornell University)
  • IEEE Transactions on Electron Devices
  • ACS Applied Materials & Interfaces
  • ACS Photonics

Collaborations are a significant aspect of Vescan's research output. Frequent co-authors include:

  • H. Kalisch
  • M. Heuken
  • Annika Grundmann
  • Max C. Lemme
  • Amir Ghiami

Best Publications

  • 12 W/mm AlGaN-GaN HFETs on silicon substrates

    J.W. Johnson;E.L. Piner;A. Vescan;R. Therrien

  • Gallium nitride materials device containing electrode defining layer and methods for forming the same

    Vescan Andrei;D Brown Jeffrey;Jerry W Johnson;Robert J Therrien

  • AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon ( 1 1 1 ) substrates

    J.D Brown;Ric Borges;Edwin Piner;Andrei Vescan

  • Current instabilities in GaN-based devices

    I. Daumiller;D. Theron;C. Gaquiere;A. Vescan

  • Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

    R. Stoklas;D. Gregušová;J. Novák;A. Vescan

  • Diamond surface-channel FET structure with 200 V breakdown voltage

    P. Gluche;A. Aleksov;A. Vescan;W. Ebert

  • Heat-spreading diamond films for GaN-based high-power transistor devices

    M. Seelmann-Eggebert;P. Meisen;F. Schaudel;P. Koidl

  • Very high temperature operation of diamond Schottky diode

    A. Vescan;I. Daumiller;P. Gluche;W. Ebert

  • Diamond junction FETs based on δ-doped channels

    A Aleksov;A Vescan;M Kunze;P Gluche

  • Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces

    B Reuters;H Hahn;A Pooth;B Holländer

  • High temperature, high voltage operation of diamond Schottky diode

    A. Vescan;I. Daumiller;P. Gluche;W. Ebert

  • Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

    Herwig Hahn;Gerrit Lükens;Nico Ketteniss;Holger Kalisch

  • p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

    Herwig Hahn;Benjamin Reuters;Alexander Pooth;Bernd Hollander

  • Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates

    N Ketteniss;L Rahimzadeh Khoshroo;M Eickelkamp;M Heuken

  • Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS2

    Daniel S. Schneider;Annika Grundmann;Andreas Bablich;Vikram Passi

  • Material, process, and device development of GaN-based HFETs on silicon substrates

    J. W. Johnson;J. Gao;K. Lucht;J. Williamson

  • The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices

    H Yacoub;D Fahle;M Finken;H Hahn

  • Chemical Vapor Deposition of Organic-Inorganic Bismuth-Based Perovskite Films for Solar Cell Application.

    S. Sanders;D. Stümmler;P. Pfeiffer;N. Ackermann

  • Diamond diodes and transistors

    A Aleksov;A Denisenko;M Kunze;A Vescan

  • High-temperature, high-voltage operation of pulse-doped diamond MESFET

    A. Vescan;P. Gluche;W. Ebert;E. Kohn

  • Small signal and power measurements of AlGaN/GaN HEMT with SiN passivation

    Jong-Soo Lee;A. Vescan;A. Wieszt;R. Dietrich

Frequent Co-Authors

Erhard Kohn
Erhard Kohn North Carolina State University
Jerry W. Johnson
Jerry W. Johnson IQE (United Kingdom)
Edwin L. Piner
Edwin L. Piner Texas State University
Horst Hahn
Horst Hahn Karlsruhe Institute of Technology
Joan M. Redwing
Joan M. Redwing Pennsylvania State University
Joachim Knoch
Joachim Knoch RWTH Aachen University
Oliver Ambacher
Oliver Ambacher University of Freiburg
Kevin J. Linthicum
Kevin J. Linthicum MACOM (United States)
Joachim N. Burghartz
Joachim N. Burghartz University of Stuttgart
Max C. Lemme
Max C. Lemme RWTH Aachen University

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