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Jürgen Bläsing

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 51 9885 9546 551 535 210 9646

Jürgen Bläsing publications per year

The chart shows the history of publications by Jürgen Bläsing between 1989 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Jürgen Bläsing published across 37 years, from 1989 to 2025, averaging 6 papers a year. Output peaked at 19 publications in 2007. 5 of the 222 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1989 to 2025. Vertical axis: number of publications, 0 to 19. Peak 19 publications in 2007. 1989: 1 publication 1990: 1 publication 1991: 1 publication 1992: 0 publications 1993: 1 publication 1994: 4 publications 1995: 2 publications 1996: 8 publications 1997: 3 publications 1998: 5 publications 1999: 13 publications 2000: 7 publications 2001: 7 publications 2002: 12 publications 2003: 11 publications 2004: 18 publications 2005: 4 publications 2006: 10 publications 2007: 19 publications 2008: 4 publications 2009: 8 publications 2010: 7 publications 2011: 9 publications 2012: 10 publications 2013: 9 publications 2014: 4 publications 2015: 5 publications 2016: 5 publications 2017: 4 publications 2018: 5 publications 2019: 3 publications 2020: 2 publications 2021: 5 publications 2022: 5 publications 2023: 5 publications 2024: 3 publications 2025: 2 publications
1989 2025

222 publications in total across all disciplines

View publications per year as a table
Jürgen Bläsing: publications per year, 1989 to 2025
Year Publications
1989 1
1990 1
1991 1
1992 0
1993 1
1994 4
1995 2
1996 8
1997 3
1998 5
1999 13
2000 7
2001 7
2002 12
2003 11
2004 18
2005 4
2006 10
2007 19
2008 4
2009 8
2010 7
2011 9
2012 10
2013 9
2014 4
2015 5
2016 5
2017 4
2018 5
2019 3
2020 2
2021 5
2022 5
2023 5
2024 3
2025 2
Total 222
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Jürgen Bläsing publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jürgen Bläsing sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 210–229 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 210 publications — 34th percentile

34% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862 210
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Jürgen Bläsing D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jürgen Bläsing sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 50–51 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 51 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657 51
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Jürgen Bläsing is affiliated with Otto-von-Guericke University Magdeburg in Germany and has contributed extensively to the fields of Engineering, Physics and Astronomy, and Materials Science. Their research spans key subfields including Electrical and Electronic Engineering, Materials Chemistry, Condensed Matter Physics, Atomic and Molecular Physics and Optics, as well as Electronic, Optical and Magnetic Materials.

Their work predominantly focuses on semiconductor materials and devices, with special emphasis on GaN-based semiconductor devices and materials, as well as ZnO doping and properties. Additional research interests include Ga2O3 and related materials, metal and thin film mechanics, mechanical and optical resonators, and advanced MEMS and NEMS technologies.

Jürgen Bläsing has published in a variety of journals, frequently appearing in the Japanese Journal of Applied Physics and the Journal of Applied Physics, each with three papers. Other notable publication venues include Semiconductor Science and Technology, arXiv (Cornell University), and Nano Letters.

Notable recent papers include:

  • High-Q Trampoline Resonators from Strained Crystalline InGaP for Integrated Free-Space Optomechanics, 2023, Nano Letters
  • Sputter Epitaxy of AlN and GaN on Si(111), 2022, physica status solidi (a)
  • Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy, 2021, Journal of Crystal Growth
  • Epitaxial growth of highly textured ZnO thin films on Si using an AlN buffer layer by atomic layer deposition, 2021, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Individually resolved luminescence from closely stacked GaN/AlN quantum wells, 2020, Photonics Research

Among frequently collaborating co-authors are A. Strittmatter, A. Dadgar, R. Goldhahn, Martin Feneberg, and Gordon Schmidt. These collaborations reflect ongoing partnerships within their areas of study.

Best Publications

  • Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approach

    M. Zacharias;J. Heitmann;R. Scholz;U. Kahler

  • Binary copper oxide semiconductors: From materials towards devices

    B. K. Meyer;A. Polity;D. Reppin;M. Becker

  • Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

    Armin Dadgar;Jürgen Bläsing;Annette Diez;Assadullah Alam

  • Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking

    A. Dadgar;M. Poschenrieder;J. Bläsing;K. Fehse

  • High Si and Ge n-type doping of GaN doping - Limits and impact on stress

    S. Fritze;A. Dadgar;H. Witte;M. Bügler

  • Thermal crystallization of amorphous Si/SiO2 superlattices

    M. Zacharias;J. Bläsing;P. Veit;L. Tsybeskov

  • MOVPE growth of GaN on Si(1 1 1) substrates

    Armin Dadgar;M. Poschenrieder;J. Bläsing;O. Contreras

  • Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 10 20 cm − 3

    Martin Feneberg;Sarah Osterburg;Karsten Lange;Christian Lidig

  • High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

    A. Dadgar;F. Schulze;J. Bläsing;A. Diez

  • Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

    A Dadgar;F Schulze;M Wienecke;A Gadanecz

  • The origin of stress reduction by low-temperature AlN interlayers

    J. Bläsing;A. Reiher;A. Dadgar;A. Diez

  • Growth of blue GaN LED structures on 150-mm Si(1 1 1)

    A. Dadgar;C. Hums;A. Diez;J. Bläsing

  • Reduction of stress at the initial stages of GaN growth on Si(111)

    A. Dadgar;M. Poschenrieder;A. Reiher;J. Bläsing

  • Efficient stress relief in GaN heteroepitaxy on Si(1 1 1) using low-temperature AlN interlayers

    A. Reiher;J. Bläsing;A. Dadgar;A. Diez

  • Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range

    C. Hums;J. Bläsing;A. Dadgar;A. Diez

  • Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer

    A. Dadgar;J. Christen;T. Riemann;S. Richter

  • Local p-type conductivity in zinc oxide dual-doped with nitrogen and arsenic

    A. Krtschil;A. Dadgar;N. Oleynik;J. Bläsing

  • Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon

    A. Dadgar;A. Strittmatter;J. Bläsing;M. Poschenrieder

  • Determination of the azimuthal orientational spread of GaN films by x-ray diffraction

    Yue Jun Sun;Oliver Brandt;Tian Yu Liu;Achim Trampert

  • MOVPE growth of GaN on Si - : Substrates and strain

    A. Dadgar;P. Veit;F. Schulze;J. Bläsing

Frequent Co-Authors

Alois Krost
Alois Krost Otto-von-Guericke University Magdeburg
Armin Dadgar
Armin Dadgar Otto-von-Guericke University Magdeburg
Jürgen Christen
Jürgen Christen Otto-von-Guericke University Magdeburg
Margit Zacharias
Margit Zacharias University of Freiburg
Bruno K. Meyer
Bruno K. Meyer University of Giessen
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)
Axel Hoffmann
Axel Hoffmann University of Illinois at Urbana-Champaign
Erhard Kohn
Erhard Kohn North Carolina State University
Fernando Ponce
Fernando Ponce Arizona State University
Philippe M. Fauchet
Philippe M. Fauchet Vanderbilt University

External Links

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Best Scientists Citing Jürgen Bläsing

Margit Zacharias

Margit Zacharias

University of Freiburg

Publications: 93

Armin Dadgar

Armin Dadgar

Otto-von-Guericke University Magdeburg

Publications: 89

Alois Krost

Alois Krost

Otto-von-Guericke University Magdeburg

Publications: 81

Gavin Conibeer

Gavin Conibeer

University of New South Wales

Publications: 66

Martin A. Green

Martin A. Green

University of New South Wales

Publications: 42

Soo Jin Chua

Soo Jin Chua

National University of Singapore

Publications: 34

Sukant K. Tripathy

Sukant K. Tripathy

University of Massachusetts Lowell

Publications: 31

Jürgen Christen

Jürgen Christen

Otto-von-Guericke University Magdeburg

Publications: 31

Umesh K. Mishra

Umesh K. Mishra

University of California, Santa Barbara

Publications: 31

Takashi Egawa

Takashi Egawa

Nagoya Institute of Technology

Publications: 30

Nicolas Grandjean

Nicolas Grandjean

École Polytechnique Fédérale de Lausanne

Publications: 30

Colin J. Humphreys

Colin J. Humphreys

Queen Mary University of London

Publications: 29

James S. Speck

James S. Speck

University of California, Santa Barbara

Publications: 28

Michael Kneissl

Michael Kneissl

Technical University of Berlin

Publications: 28

Lorenzo Pavesi

Lorenzo Pavesi

University of Trento

Publications: 27

Klaus Thonke

Klaus Thonke

University of Ulm

Publications: 25

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Arjun Dey

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Yufang Jin

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