World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
51
Citations
9646
World Ranking
9885
National Ranking
551

Jürgen Bläsing publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jürgen Bläsing sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 210 publications — 34th percentile

34% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Jürgen Bläsing D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jürgen Bläsing sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 51 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Jürgen Bläsing is affiliated with Otto-von-Guericke University Magdeburg in Germany and has contributed extensively to the fields of Engineering, Physics and Astronomy, and Materials Science. Their research spans key subfields including Electrical and Electronic Engineering, Materials Chemistry, Condensed Matter Physics, Atomic and Molecular Physics and Optics, as well as Electronic, Optical and Magnetic Materials.

Their work predominantly focuses on semiconductor materials and devices, with special emphasis on GaN-based semiconductor devices and materials, as well as ZnO doping and properties. Additional research interests include Ga2O3 and related materials, metal and thin film mechanics, mechanical and optical resonators, and advanced MEMS and NEMS technologies.

Jürgen Bläsing has published in a variety of journals, frequently appearing in the Japanese Journal of Applied Physics and the Journal of Applied Physics, each with three papers. Other notable publication venues include Semiconductor Science and Technology, arXiv (Cornell University), and Nano Letters.

Notable recent papers include:

  • High-Q Trampoline Resonators from Strained Crystalline InGaP for Integrated Free-Space Optomechanics, 2023, Nano Letters
  • Sputter Epitaxy of AlN and GaN on Si(111), 2022, physica status solidi (a)
  • Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy, 2021, Journal of Crystal Growth
  • Epitaxial growth of highly textured ZnO thin films on Si using an AlN buffer layer by atomic layer deposition, 2021, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Individually resolved luminescence from closely stacked GaN/AlN quantum wells, 2020, Photonics Research

Among frequently collaborating co-authors are A. Strittmatter, A. Dadgar, R. Goldhahn, Martin Feneberg, and Gordon Schmidt. These collaborations reflect ongoing partnerships within their areas of study.

Best Publications

  • Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approach

    M. Zacharias;J. Heitmann;R. Scholz;U. Kahler

  • Binary copper oxide semiconductors: From materials towards devices

    B. K. Meyer;A. Polity;D. Reppin;M. Becker

  • Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

    Armin Dadgar;Jürgen Bläsing;Annette Diez;Assadullah Alam

  • Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking

    A. Dadgar;M. Poschenrieder;J. Bläsing;K. Fehse

  • High Si and Ge n-type doping of GaN doping - Limits and impact on stress

    S. Fritze;A. Dadgar;H. Witte;M. Bügler

  • Thermal crystallization of amorphous Si/SiO2 superlattices

    M. Zacharias;J. Bläsing;P. Veit;L. Tsybeskov

  • MOVPE growth of GaN on Si(1 1 1) substrates

    Armin Dadgar;M. Poschenrieder;J. Bläsing;O. Contreras

  • Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 10 20 cm − 3

    Martin Feneberg;Sarah Osterburg;Karsten Lange;Christian Lidig

  • High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

    A. Dadgar;F. Schulze;J. Bläsing;A. Diez

  • Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

    A Dadgar;F Schulze;M Wienecke;A Gadanecz

  • The origin of stress reduction by low-temperature AlN interlayers

    J. Bläsing;A. Reiher;A. Dadgar;A. Diez

  • Growth of blue GaN LED structures on 150-mm Si(1 1 1)

    A. Dadgar;C. Hums;A. Diez;J. Bläsing

  • Reduction of stress at the initial stages of GaN growth on Si(111)

    A. Dadgar;M. Poschenrieder;A. Reiher;J. Bläsing

  • Efficient stress relief in GaN heteroepitaxy on Si(1 1 1) using low-temperature AlN interlayers

    A. Reiher;J. Bläsing;A. Dadgar;A. Diez

  • Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range

    C. Hums;J. Bläsing;A. Dadgar;A. Diez

  • Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer

    A. Dadgar;J. Christen;T. Riemann;S. Richter

  • Local p-type conductivity in zinc oxide dual-doped with nitrogen and arsenic

    A. Krtschil;A. Dadgar;N. Oleynik;J. Bläsing

  • Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon

    A. Dadgar;A. Strittmatter;J. Bläsing;M. Poschenrieder

  • Determination of the azimuthal orientational spread of GaN films by x-ray diffraction

    Yue Jun Sun;Oliver Brandt;Tian Yu Liu;Achim Trampert

  • MOVPE growth of GaN on Si - : Substrates and strain

    A. Dadgar;P. Veit;F. Schulze;J. Bläsing

Frequent Co-Authors

Alois Krost
Alois Krost Otto-von-Guericke University Magdeburg
Armin Dadgar
Armin Dadgar Otto-von-Guericke University Magdeburg
Jürgen Christen
Jürgen Christen Otto-von-Guericke University Magdeburg
Margit Zacharias
Margit Zacharias University of Freiburg
Bruno K. Meyer
Bruno K. Meyer University of Giessen
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)
Axel Hoffmann
Axel Hoffmann University of Illinois at Urbana-Champaign
Erhard Kohn
Erhard Kohn North Carolina State University
Fernando Ponce
Fernando Ponce Arizona State University
Philippe M. Fauchet
Philippe M. Fauchet Vanderbilt University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Jürgen Bläsing

Trending Scientists

Recently Published Articles