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Materials Science

D-Index
51
Citations
9646
World Ranking
9887
National Ranking
552

Overview

Jürgen Bläsing is affiliated with Otto-von-Guericke University Magdeburg in Germany and has contributed extensively to the fields of Engineering, Physics and Astronomy, and Materials Science. Their research spans key subfields including Electrical and Electronic Engineering, Materials Chemistry, Condensed Matter Physics, Atomic and Molecular Physics and Optics, as well as Electronic, Optical and Magnetic Materials.

Their work predominantly focuses on semiconductor materials and devices, with special emphasis on GaN-based semiconductor devices and materials, as well as ZnO doping and properties. Additional research interests include Ga2O3 and related materials, metal and thin film mechanics, mechanical and optical resonators, and advanced MEMS and NEMS technologies.

Jürgen Bläsing has published in a variety of journals, frequently appearing in the Japanese Journal of Applied Physics and the Journal of Applied Physics, each with three papers. Other notable publication venues include Semiconductor Science and Technology, arXiv (Cornell University), and Nano Letters.

Notable recent papers include:

  • High-Q Trampoline Resonators from Strained Crystalline InGaP for Integrated Free-Space Optomechanics, 2023, Nano Letters
  • Sputter Epitaxy of AlN and GaN on Si(111), 2022, physica status solidi (a)
  • Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy, 2021, Journal of Crystal Growth
  • Epitaxial growth of highly textured ZnO thin films on Si using an AlN buffer layer by atomic layer deposition, 2021, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Individually resolved luminescence from closely stacked GaN/AlN quantum wells, 2020, Photonics Research

Among frequently collaborating co-authors are A. Strittmatter, A. Dadgar, R. Goldhahn, Martin Feneberg, and Gordon Schmidt. These collaborations reflect ongoing partnerships within their areas of study.

Best Publications

  • Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approach

    M. Zacharias;J. Heitmann;R. Scholz;U. Kahler

  • Binary copper oxide semiconductors: From materials towards devices

    B. K. Meyer;A. Polity;D. Reppin;M. Becker

  • Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

    Armin Dadgar;Jürgen Bläsing;Annette Diez;Assadullah Alam

  • Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking

    A. Dadgar;M. Poschenrieder;J. Bläsing;K. Fehse

  • High Si and Ge n-type doping of GaN doping - Limits and impact on stress

    S. Fritze;A. Dadgar;H. Witte;M. Bügler

  • Thermal crystallization of amorphous Si/SiO2 superlattices

    M. Zacharias;J. Bläsing;P. Veit;L. Tsybeskov

  • MOVPE growth of GaN on Si(1 1 1) substrates

    Armin Dadgar;M. Poschenrieder;J. Bläsing;O. Contreras

  • Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 10 20 cm − 3

    Martin Feneberg;Sarah Osterburg;Karsten Lange;Christian Lidig

  • High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

    A. Dadgar;F. Schulze;J. Bläsing;A. Diez

  • Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

    A Dadgar;F Schulze;M Wienecke;A Gadanecz

  • The origin of stress reduction by low-temperature AlN interlayers

    J. Bläsing;A. Reiher;A. Dadgar;A. Diez

  • Growth of blue GaN LED structures on 150-mm Si(1 1 1)

    A. Dadgar;C. Hums;A. Diez;J. Bläsing

  • Reduction of stress at the initial stages of GaN growth on Si(111)

    A. Dadgar;M. Poschenrieder;A. Reiher;J. Bläsing

  • Efficient stress relief in GaN heteroepitaxy on Si(1 1 1) using low-temperature AlN interlayers

    A. Reiher;J. Bläsing;A. Dadgar;A. Diez

  • Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range

    C. Hums;J. Bläsing;A. Dadgar;A. Diez

  • Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer

    A. Dadgar;J. Christen;T. Riemann;S. Richter

  • Local p-type conductivity in zinc oxide dual-doped with nitrogen and arsenic

    A. Krtschil;A. Dadgar;N. Oleynik;J. Bläsing

  • Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon

    A. Dadgar;A. Strittmatter;J. Bläsing;M. Poschenrieder

  • Determination of the azimuthal orientational spread of GaN films by x-ray diffraction

    Yue Jun Sun;Oliver Brandt;Tian Yu Liu;Achim Trampert

  • MOVPE growth of GaN on Si - : Substrates and strain

    A. Dadgar;P. Veit;F. Schulze;J. Bläsing

Frequent Co-Authors

Alois Krost
Alois Krost Otto-von-Guericke University Magdeburg
Armin Dadgar
Armin Dadgar Otto-von-Guericke University Magdeburg
Jürgen Christen
Jürgen Christen Otto-von-Guericke University Magdeburg
Margit Zacharias
Margit Zacharias University of Freiburg
Bruno K. Meyer
Bruno K. Meyer University of Giessen
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)
Axel Hoffmann
Axel Hoffmann University of Illinois at Urbana-Champaign
Erhard Kohn
Erhard Kohn North Carolina State University
Fernando Ponce
Fernando Ponce Arizona State University
Philippe M. Fauchet
Philippe M. Fauchet Vanderbilt University

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