World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
54
Citations
12977
World Ranking
2262
National Ranking
885

Overview

E. Fred Schubert is affiliated with Rensselaer Polytechnic Institute in the United States. Their research encompasses multiple fields within computer science and engineering, with contributions that span areas such as computer vision, pattern recognition, management science, operations research, artificial intelligence, building and construction, and aerospace engineering.

The scientist's recent scholarly work, published primarily in the Journal of Manufacturing and Materials Processing, includes investigations into robotic path planning and reinforcement learning techniques. Notable papers are:

  • Exploring Multi-Armed Bandit (MAB) as an AI Tool for Optimising GMA-WAAM Path Planning (2024), Journal of Manufacturing and Materials Processing
  • Reducing Computational Time in Pixel-Based Path Planning for GMA-DED by Using Multi-Armed Bandit Reinforcement Learning Algorithm (2025), Journal of Manufacturing and Materials Processing

These publications reflect a focus on robotic path planning algorithms and the application of advanced bandit algorithms and reinforcement learning in robotics. Their work frequently addresses topics such as:

  • Robotic Path Planning Algorithms
  • Advanced Bandit Algorithms Research
  • Reinforcement Learning in Robotics
  • Smart Parking Systems Research
  • Robotics and Sensor-Based Localization

Their collaborations include partnerships with researchers such as Rafael Pereira Ferreira and Américo Scotti, who have coauthored multiple papers with them. The consistent publication venue, the Journal of Manufacturing and Materials Processing, suggests focused research on manufacturing processes integrated with advanced computation methods.

Overall, their academic contributions lie at the intersection of computer science and engineering, with an emphasis on algorithm development for real-world robotics applications and sensor-based localization techniques. This overview illustrates a career dedicated to advancing the understanding and practical implementation of machine learning algorithms in manufacturing and robotics contexts.

Best Publications

  • Light-Emitting Diodes by E. Fred Schubert

    E. Fred Schubert

  • Origin of efficiency droop in GaN-based light-emitting diodes

    Min-Ho Kim;Martin F. Schubert;Qi Dai;Jong Kyu Kim

  • Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflection

    J.-Q. Xi;Martin F. Schubert;Jong Kyu Kim;E. Fred Schubert

  • White light-emitting diodes: History, progress, and future

    Jaehee Cho;Jun Hyuk Park;Jong Kyu Kim;E. Fred Schubert

  • Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

    Martin F. Schubert;Jiuru Xu;Jong Kyu Kim;E. Fred Schubert

  • Efficiency droop in light‐emitting diodes: Challenges and countermeasures

    Jaehee Cho;E. Fred Schubert;Jong Kyu Kim

  • Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

    Martin F. Schubert;Sameer Chhajed;Jong Kyu Kim;E. Fred Schubert

  • Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes

    S. Chhajed;Y. Xi;Y.-L. Li;Th. Gessmann

  • Solid-state lighting?a benevolent technology

    E. Fred Schubert;Jong Kyu Kim;Hong Luo;J.-Q. Xi

  • Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics

    Sameer Chhajed;Martin F. Schubert;Jong Kyu Kim;E. Fred Schubert

  • Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

    Q. Dai;M. F. Schubert;M. H. Kim;J. K. Kim

  • Analysis of high-power packages for phosphor-based white-light-emitting diodes

    Hong Luo;Jong Kyu Kim;E. Fred Schubert;Jaehee Cho

  • Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates

    X. Guo;E. F. Schubert

  • Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

    Qi Dai;Qifeng Shan;Jing Wang;Sameer Chhajed

  • Optical properties of Si-doped GaN

    E. F. Schubert;I. D. Goepfert;W. Grieshaber;W. Grieshaber;J. M. Redwing

  • Transcending the replacement paradigm of solid-state lighting.

    Jong Kyu Kim;E Fred Schubert

  • The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

    Di Zhu;Jiuru Xu;Ahmed N. Noemaun;Jong Kyu Kim

  • Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

    Jiuru Xu;Martin F. Schubert;Ahmed N. Noemaun;Di Zhu

  • High-refractive-index TiO2-nanoparticle-loaded encapsulants for light-emitting diodes

    Frank W. Mont;Jong Kyu Kim;Martin F. Schubert;E. Fred Schubert

  • Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency

    Guan-Bo Lin;David S. Meyaard;Jaehee Cho;E. Fred Schubert

  • Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

    David S. Meyaard;Guan-Bo Lin;Qifeng Shan;Jaehee Cho

  • Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

    David S. Meyaard;Guan-Bo Lin;Qifeng Shan;Jaehee Cho

  • GaInN light-emitting diodes with RuO2/SiO2/Ag omni-directional reflector

    Jong Kyu Kim;Thomas Gessmann;Hong Luo;E. Fred Schubert

  • Band gap bowing and refractive index spectra of polycrystalline AlxIn1−xN films deposited by sputtering

    T. Peng;J. Piprek;G. Qiu;J. O. Olowolafe

  • Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities

    David S. Meyaard;Qifeng Shan;Jaehee Cho;E. Fred Schubert

  • Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes

    Qifeng Shan;David S. Meyaard;Qi Dai;Jaehee Cho

  • Internal quantum efficiency and non-radiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

    Q. Dai;M. F. Schubert;M. H. Kim;J. K. Kim

Frequent Co-Authors

Jaehee Cho
Jaehee Cho Jeonbuk National University
Jong Kyu Kim
Jong Kyu Kim Pohang University of Science and Technology
Cheolsoo Sone
Cheolsoo Sone Samsung (South Korea)
Mary H. Crawford
Mary H. Crawford Sandia National Laboratories
Daniel D. Koleske
Daniel D. Koleske Sandia National Laboratories
Joachim Piprek
Joachim Piprek NUSOD Institute
Minghwei Hong
Minghwei Hong National Taiwan University
Richard W. Siegel
Richard W. Siegel Rensselaer Polytechnic Institute
Andrei Osinsky
Andrei Osinsky Corning (United States)
Joseph Petrus Mannaerts
Joseph Petrus Mannaerts National Tsing Hua University

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