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Luke F. Lester

Luke F. Lester

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
55
Citations
9741
World Ranking
2214
National Ranking
865

Overview

Luke F. Lester is affiliated with Virginia Tech in the United States. Their research primarily focuses on engineering, with a strong emphasis on electrical and electronic engineering, and subfields including atomic and molecular physics, optics, artificial intelligence, information systems and management, and biomedical engineering.

The main topics covered in Luke F. Lester's work include:

  • Photonic and Optical Devices
  • Semiconductor Lasers and Optical Devices
  • Optical Network Technologies
  • Advanced Fiber Laser Technologies
  • Neural Networks and Reservoir Computing
  • Interdisciplinary Research and Collaboration
  • Biomedical and Engineering Education

Their recent papers are:

  • Using Transitional Points in the Optical Injection Locking Behavior of a Semiconductor Laser to Extract Its Dimensionless Operating Parameters (2021), published in IEEE Journal of Selected Topics in Quantum Electronics
  • Strongly Detuned Tunable Photonic Oscillators (2021), published in IEEE Photonics Technology Letters
  • In it for the Long Haul: The Groundwork of Interdisciplinary Culture Change in Engineering Education Reform (2023), published in Engineering Studies
  • Monolithically Integrated ϵ-Ge/InxGa1-xAs Quantum Well Laser Design: Experimental and Theoretical Investigation (2023), published in IEEE Journal of Selected Topics in Quantum Electronics
  • Device Characterization of a Sulfur-Implanted p++/p GaSb Photovoltaic Camel Diode (2020), published in IEEE Journal of Photovoltaics

Frequent co-authors collaborating with Luke F. Lester include:

  • Daniel J. Herrera
  • Vassilios Kovanis
  • Mantu K. Hudait
  • Rutwik Joshi
  • Kevin Tomkins

The venues where their work has been frequently published include:

  • IEEE Journal of Selected Topics in Quantum Electronics
  • IEEE Photonics Technology Letters
  • Engineering Studies
  • IEEE Journal of Photovoltaics
  • Frontiers in Optics / Laser Science

Best Publications

  • Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well

    G.T. Liu;A. Stintz;H. Li;K.J. Malloy

  • Gain and linewidth enhancement factor in InAs quantum-dot laser diodes

    T.C. Newell;D.J. Bossert;A. Stintz;B. Fuchs

  • Optical characteristics of 1.24-μm InAs quantum-dot laser diodes

    L.F. Lester;A. Stintz;H. Li;T.C. Newell

  • Room-temperature operation of InAs quantum-dash lasers on InP [001]

    R.H. Wang;A. Stintz;P.M. Varangis;T.C. Newell

  • GaSb∕GaAs type II quantum dot solar cells for enhanced infrared spectral response

    R. B. Laghumavarapu;A. Moscho;A. Khoshakhlagh;M. El-Emawy

  • Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes

    P. G. Eliseev;H. Li;A. Stintz;G. T. Liu

  • Improved device performance of InAs∕GaAs quantum dot solar cells with GaP strain compensation layers

    R. B. Laghumavarapu;M. El-Emawy;N. Nuntawong;A. Moscho

  • Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers

    Xiaodong Huang;A. Stintz;Hua Li;L. F. Lester

  • Transform-limited, narrow-linewidth, terahertz-wave parametric generator

    Kodo Kawase;Jun-ichi Shikata;Kazuhiro Imai;Hiromasa Ito

  • The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures

    G.T. Liu;A. Stintz;H. Li;T.C. Newell

  • Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure

    A. Stintz;G.T. Liu;H. Li;L.F. Lester

  • Low-threshold quantum dot lasers with 201 nm tuning range

    P.M. Varangis;H. Li;G.T. Liu;T.C. Newell

  • Single-mode GaN nanowire lasers

    Qiming Li;Jeremy B Wright;Weng W Chow;Ting Shan Luk

  • Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers

    P.G. Eliseev;H. Li;T. Liu;T.C. Newell

  • Nonalloyed Ti/Al Ohmic contacts to n‐type GaN using high‐temperature premetallization anneal

    L. F. Lester;J. M. Brown;J. C. Ramer;L. Zhang

  • Gain Compression and Above-Threshold Linewidth Enhancement Factor in 1.3- $\mu\hbox{m}$ InAs–GaAs Quantum-Dot Lasers

    F. Grillot;B. Dagens;J.-G. Provost;Hui Su

  • High-performance InAs quantum-dot lasers near 1.3 μm

    Y. Qiu;P. Gogna;S. Forouhar;A. Stintz

  • Dynamic properties of quantum dot distributed feedback lasers: high speed, linewidth and chirp

    Hui Su;Luke F Lester

  • Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor

    T. Henderson;M.I. Aksun;C.K. Peng;H. Morkoc

  • High-gain quantum-dot semiconductor optical amplifier for 1300 nm

    Z. Bakonyi;Hui Su;G. Onishchukov;L.F. Lester

  • Ultra-low-noise cryogenic high-electron-mobility transistors

    K.H.G. Duh;M.W. Pospieszalski;W.F. Kopp;P. Ho

Frequent Co-Authors

Andreas Stintz
Andreas Stintz University of New Mexico
Kevin J. Malloy
Kevin J. Malloy University of New Mexico
Frédéric Grillot
Frédéric Grillot Télécom ParisTech
Christos G. Christodoulou
Christos G. Christodoulou University of New Mexico
William J. Schaff
William J. Schaff Cornell University
Diana L. Huffaker
Diana L. Huffaker The University of Texas at Arlington
Igal Brener
Igal Brener Sandia National Laboratories
Lester F. Eastman
Lester F. Eastman Cornell University
Daniel D. Koleske
Daniel D. Koleske Sandia National Laboratories
Marek Osinski
Marek Osinski University of New Mexico

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