The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Andreas Stintz sits on this spectrum.
This scientist: 209 publications — 32nd percentile
32% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Andreas Stintz sits on this spectrum.
This scientist: 46 D-Index — 52nd percentile
52% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Andreas Stintz is a researcher affiliated with the University of New Mexico in the United States. Their work focuses primarily on topics related to semiconductor quantum structures, advanced semiconductor detectors, and semiconductor lasers and optical devices.
The main fields of study associated with Stintz include Engineering and Physics and Astronomy. Within these broad fields, their research specifically addresses subfields such as Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, and Materials Chemistry.
Research topics prominently covered by Stintz are:
Their recent publications illustrate a focus on InAs quantum dots and related heterostructures. Selected papers include:
Frequent co-authors collaborating with Stintz include T.V. Torchynska, R. Cisneros Tamayo, G. Polupan, A. Escobosa, and I.J. Guerrero Moreno. These collaborations often reflect joint work on advanced semiconductor materials and structures.
The venues where Stintz frequently publishes are:
Overall, the scientific output of Andreas Stintz centers on the investigation of quantum dot emission properties, heterostructure design, and semiconductor optoelectronic device materials. Their contributions expand knowledge within the intersection of quantum materials and device engineering, with a particular emphasis on the synthesis and characterization of nanoscale semiconductor systems.
G.T. Liu;A. Stintz;H. Li;K.J. Malloy
T.C. Newell;D.J. Bossert;A. Stintz;B. Fuchs
L.F. Lester;A. Stintz;H. Li;T.C. Newell
R.H. Wang;A. Stintz;P.M. Varangis;T.C. Newell
Kartik Srinivasan;Matthew Borselli;Oskar Painter;Andreas Stintz
P. G. Eliseev;H. Li;A. Stintz;G. T. Liu
Xiaodong Huang;A. Stintz;Hua Li;L. F. Lester
G.T. Liu;A. Stintz;H. Li;T.C. Newell
S. Raghavan;P. Rotella;A. Stintz;B. Fuchs
A. Stintz;G.T. Liu;H. Li;L.F. Lester
P.M. Varangis;H. Li;G.T. Liu;T.C. Newell
A. Stintz;G. T. Liu;A. L. Gray;R. Spillers
Kartik Srinivasan;Matthew Borselli;Andreas Stintz;Sanjay Krishna
S. Krishna;S. Raghavan;G. von Winckel;A. Stintz
A. A. Ukhanov;A. Stintz;P. G. Eliseev;K. J. Malloy
Andreas Stintz;Petros N. Varangis;Kevin J. Malloy;Luke F. Lester
Y. Qiu;P. Gogna;S. Forouhar;A. Stintz
Kartik Srinivasan;Matthew Borselli;Thomas J. Johnson;Paul E. Barclay
Xiaodong Huang;A. Stintz;C.P. Hains;G.T. Liu
Ganesh Balakrishnan;Shenghong Huang;Thomas J. Rotter;Andreas Stintz
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Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Publications: 57
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