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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
46
Citations
7998
World Ranking
3404
National Ranking
1250

Overview

Andreas Stintz is a researcher affiliated with the University of New Mexico in the United States. Their work focuses primarily on topics related to semiconductor quantum structures, advanced semiconductor detectors, and semiconductor lasers and optical devices.

The main fields of study associated with Stintz include Engineering and Physics and Astronomy. Within these broad fields, their research specifically addresses subfields such as Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, and Materials Chemistry.

Research topics prominently covered by Stintz are:

  • Semiconductor Quantum Structures and Devices
  • Advanced Semiconductor Detectors and Materials
  • Semiconductor Lasers and Optical Devices
  • Quantum Dots Synthesis and Properties

Their recent publications illustrate a focus on InAs quantum dots and related heterostructures. Selected papers include:

  • "Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures vs Quantum Well Compositions," 2022, published in ECS Journal of Solid State Science and Technology
  • "Impact of composition of AlGaInAs confining barriers on emission of InAs quantum dots embedded in AlGaAs/GaAs dot-in-a-well heterostructures," 2024, published in Optical Materials
  • "Comparison of parameter variation of InAs quantum dots embedded in GaAs/Al0.30Ga0.70As structures with different capping/buffer quantum wells at annealing," 2023, published in Journal of Materials Science Materials in Electronics

Frequent co-authors collaborating with Stintz include T.V. Torchynska, R. Cisneros Tamayo, G. Polupan, A. Escobosa, and I.J. Guerrero Moreno. These collaborations often reflect joint work on advanced semiconductor materials and structures.

The venues where Stintz frequently publishes are:

  • ECS Journal of Solid State Science and Technology
  • Optical Materials
  • Journal of Materials Science Materials in Electronics

Overall, the scientific output of Andreas Stintz centers on the investigation of quantum dot emission properties, heterostructure design, and semiconductor optoelectronic device materials. Their contributions expand knowledge within the intersection of quantum materials and device engineering, with a particular emphasis on the synthesis and characterization of nanoscale semiconductor systems.

Best Publications

  • Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well

    G.T. Liu;A. Stintz;H. Li;K.J. Malloy

  • Gain and linewidth enhancement factor in InAs quantum-dot laser diodes

    T.C. Newell;D.J. Bossert;A. Stintz;B. Fuchs

  • Optical characteristics of 1.24-μm InAs quantum-dot laser diodes

    L.F. Lester;A. Stintz;H. Li;T.C. Newell

  • Room-temperature operation of InAs quantum-dash lasers on InP [001]

    R.H. Wang;A. Stintz;P.M. Varangis;T.C. Newell

  • Cavity Q, mode volume, and lasing threshold in small diameter AlGaAs microdisks with embedded quantum dots

    Kartik Srinivasan;Matthew Borselli;Oskar Painter;Andreas Stintz

  • Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes

    P. G. Eliseev;H. Li;A. Stintz;G. T. Liu

  • Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers

    Xiaodong Huang;A. Stintz;Hua Li;L. F. Lester

  • The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures

    G.T. Liu;A. Stintz;H. Li;T.C. Newell

  • High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In0.15Ga0.85As dots-in-a-well detector

    S. Raghavan;P. Rotella;A. Stintz;B. Fuchs

  • Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure

    A. Stintz;G.T. Liu;H. Li;L.F. Lester

  • Low-threshold quantum dot lasers with 201 nm tuning range

    P.M. Varangis;H. Li;G.T. Liu;T.C. Newell

  • Characterization of InAs quantum dots in strained InxGa1-xAs quantum wells

    A. Stintz;G. T. Liu;A. L. Gray;R. Spillers

  • Cavity Q, mode volume, and lasing threshold in small diameter AlGaAs microdisks with embedded quantum dots

    Kartik Srinivasan;Matthew Borselli;Andreas Stintz;Sanjay Krishna

  • Three-color (λp1∼3.8 μm, λp2∼8.5 μm, and λp3∼23.2 μm) InAs/InGaAs quantum-dots-in-a-well detector

    S. Krishna;S. Raghavan;G. von Winckel;A. Stintz

  • Comparison of the carrier induced refractive index, gain, and linewidth enhancement factor in quantum dot and quantum well lasers

    A. A. Ukhanov;A. Stintz;P. G. Eliseev;K. J. Malloy

  • Quantum dot lasers

    Andreas Stintz;Petros N. Varangis;Kevin J. Malloy;Luke F. Lester

  • High-performance InAs quantum-dot lasers near 1.3 μm

    Y. Qiu;P. Gogna;S. Forouhar;A. Stintz

  • Optical loss and lasing characteristics of high-quality-factor AlGaAs microdisk resonators with embedded quantum dots

    Kartik Srinivasan;Matthew Borselli;Thomas J. Johnson;Paul E. Barclay

  • Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser

    Xiaodong Huang;A. Stintz;C.P. Hains;G.T. Liu

  • 2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer

    Ganesh Balakrishnan;Shenghong Huang;Thomas J. Rotter;Andreas Stintz

Frequent Co-Authors

Kevin J. Malloy
Kevin J. Malloy University of New Mexico
Luke F. Lester
Luke F. Lester Virginia Tech
Sanjay Krishna
Sanjay Krishna The Ohio State University
Margaret Buchanan
Margaret Buchanan National Research Council Canada
H. C. Liu
H. C. Liu Shanghai Jiao Tong University
Richard D. Averitt
Richard D. Averitt University of California, San Diego
Diana L. Huffaker
Diana L. Huffaker The University of Texas at Arlington
Paul E. Barclay
Paul E. Barclay University of Calgary
Philip J. Poole
Philip J. Poole National Research Council Canada
Steven R. J. Brueck
Steven R. J. Brueck University of New Mexico

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