World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
46
Citations
8245
World Ranking
11425
National Ranking
2680

Daniel Josell publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Daniel Josell sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 217 publications — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Daniel Josell D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Daniel Josell sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 46 D-Index — 12th percentile

12% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Daniel Josell is a researcher affiliated with the National Institute of Standards and Technology in the United States. Their work spans several fields with a primary focus on Engineering, Physics and Astronomy, and Materials Science. Within these, subfields such as Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics play significant roles in their research activities. Additional subfields include Radiation and Electrochemistry.

The main research topics covered by Daniel Josell include:

  • Electrodeposition and Electroless Coatings
  • Copper Interconnects and Reliability
  • Advanced X-ray Imaging Techniques
  • Electrochemical Analysis and Applications
  • Electrocatalysts for Energy Conversion
  • Semiconductor materials and interfaces
  • Advancements in Photolithography Techniques

Daniel Josell has contributed extensively to scholarly journals, with frequent publications in venues such as:

  • Journal of The Electrochemical Society
  • ECS Meeting Abstracts
  • Scientific Reports
  • Accounts of Chemical Research
  • Electrochimica Acta

Their recent papers include:

  • "Superconformal Film Growth: From Smoothing Surfaces to Interconnect Technology," 2023, Accounts of Chemical Research
  • "Pushing the Limits of Bottom-Up Gold Filling for X-ray Grating Interferometry," 2020, Journal of The Electrochemical Society
  • "Bottom-up Cu filling of annular through silicon vias: Microstructure and texture," 2020, Electrochimica Acta
  • "Simulating the Influence of Supporting Electrolyte Concentration on Copper Electrodeposition in Microvias," 2022, Journal of The Electrochemical Society
  • "Buffer layer engineering of L1 FePd thin films with large perpendicular magnetic anisotropy," 2021, AIP Advances

They have collaborated frequently with several researchers, including:

  • Thomas P. Moffat
  • Trevor Michael Braun
  • Lucia Romano
  • David Raciti
  • Konstantins Jefimovs

Best Publications

  • Superconformal Electrodeposition of Copper in 500-90 nm Features

    T. P. Moffat;J. E. Bonevich;W. H. Huber;A. Stanishevsky

  • Superconformal film growth: mechanism and quantification

    Thomas P. Moffat;Daniel Wheeler;Monica D. Edelstein;Daniel Josell

  • Superconformal Electrodeposition of Copper

    T. P. Moffat;D. Wheeler;W. H. Huber;D. Josell

  • Electrodeposition of Copper in the SPS-PEG-Cl Additive System I. Kinetic Measurements: Influence of SPS

    Thomas P. Moffat;Daniel Wheeler;Daniel Josell

  • Size-Dependent Resistivity in Nanoscale Interconnects

    Daniel Josell;Sywert H. Brongersma;Zsolt Tőkei

  • Extreme Bottom-Up Superfilling of Through-Silicon-Vias by Damascene Processing: Suppressor Disruption, Positive Feedback and Turing Patterns

    T. P. Moffat;D. Josell

  • Superconformal Electrodeposition in Submicron Features

    Daniel Josell;Daniel Wheeler;W H. Huber;Thomas P. Moffat

  • Seedless superfill: Copper electrodeposition in trenches with ruthenium barriers

    Daniel Josell;Daniel Wheeler;C Witt;Thomas P. Moffat

  • Curvature enhanced adsorbate coverage mechanism for bottom-up superfilling and bump control in damascene processing

    T.P. Moffat;D. Wheeler;S.-K. Kim;D. Josell

  • A Simple Equation for Predicting Superconformal Electrodeposition in Submicrometer Trenches

    Daniel Josell;Daniel Wheeler;W H. Huber;John E. Bonevich

  • Curvature Enhanced Adsorbate Coverage Model for Electrodeposition

    Thomas P. Moffat;Daniel Wheeler;Soo K. Kim;Daniel Josell

  • Modeling Superconformal Electrodeposition Using The Level Set Method

    Daniel Wheeler;Daniel Josell;Thomas P. Moffat

  • Electrodeposition of Cu in the PEI-PEG-Cl-SPS Additive System Reduction of Overfill Bump Formation During Superfilling

    Soo K. Kim;Daniel Josell;Thomas P. Moffat

  • Electrodeposition of Cu on Ru Barrier Layers for Damascene Processing

    T. P. Moffat;M. Walker;P. J. Chen;J. E. Bonevich

  • A new method for tensile testing of thin films

    J. A. Ruud;D. Josell;F. Spaepen;A. L. Greer

  • Stability in thin film multilayers and microlaminates: the role of free energy, structure, and orientation at interfaces and grain boundaries

    A.C. Lewis;D. Josell;T.P. Weihs

  • Cationic Surfactants for the Control of Overfill Bumps in Cu Superfilling

    Soo K. Kim;Daniel Josell;Thomas P. Moffat

  • Modeling Extreme Bottom-Up Filling of Through Silicon Vias

    D. Josell;D. Wheeler;T. P. Moffat

  • The formation of f.c.c. titanium in titanium-aluminum multilayers

    D. Van Heerden;D. Josell;D. Shechtman

  • Determination of the interfacial tension by zero creep experiments on multilayers—II. Experiment

    D. Josell;F. Spaepen

  • Determination of the CoTi congruent melting point and thermodynamic reassessment of the Co-Ti system

    A. V. Davydov;U. R. Kattner;D. Josell;R. M. Waterstrat

Frequent Co-Authors

Thomas P. Moffat
Thomas P. Moffat National Institute of Standards and Technology
Lee J. Richter
Lee J. Richter National Institute of Standards and Technology
Leonid A. Bendersky
Leonid A. Bendersky National Institute of Standards and Technology
William J. Boettinger
William J. Boettinger National Institute of Standards and Technology
Mikko Ritala
Mikko Ritala University of Helsinki
Timothy P. Weihs
Timothy P. Weihs Johns Hopkins University
Ichiro Takeuchi
Ichiro Takeuchi University of Maryland, College Park
Samuel E. Lofland
Samuel E. Lofland Rowan University
Frans Spaepen
Frans Spaepen Harvard University
Sam R. Coriell
Sam R. Coriell National Institute of Standards and Technology

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