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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 59 7489 7239 1852 1715 297 10463

Thomas P. Moffat publications per year

The chart shows the history of publications by Thomas P. Moffat between 1987 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Thomas P. Moffat published across 40 years, from 1987 to 2026, averaging 8.1 papers a year. Output peaked at 25 publications in 2020. 6 of the 322 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1987 to 2026. Vertical axis: number of publications, 0 to 25. Peak 25 publications in 2020. 1987: 1 publication 1988: 3 publications 1989: 0 publications 1990: 1 publication 1991: 4 publications 1992: 5 publications 1993: 1 publication 1994: 4 publications 1995: 5 publications 1996: 2 publications 1997: 0 publications 1998: 3 publications 1999: 5 publications 2000: 2 publications 2001: 8 publications 2002: 10 publications 2003: 13 publications 2004: 9 publications 2005: 7 publications 2006: 18 publications 2007: 13 publications 2008: 7 publications 2009: 10 publications 2010: 6 publications 2011: 14 publications 2012: 12 publications 2013: 13 publications 2014: 6 publications 2015: 19 publications 2016: 14 publications 2017: 8 publications 2018: 11 publications 2019: 7 publications 2020: 25 publications 2021: 11 publications 2022: 21 publications 2023: 7 publications 2024: 11 publications 2025: 2 publications 2026: 4 publications
1987 2026

322 publications in total across all disciplines

View publications per year as a table
Thomas P. Moffat: publications per year, 1987 to 2026
Year Publications
1987 1
1988 3
1989 0
1990 1
1991 4
1992 5
1993 1
1994 4
1995 5
1996 2
1997 0
1998 3
1999 5
2000 2
2001 8
2002 10
2003 13
2004 9
2005 7
2006 18
2007 13
2008 7
2009 10
2010 6
2011 14
2012 12
2013 13
2014 6
2015 19
2016 14
2017 8
2018 11
2019 7
2020 25
2021 11
2022 21
2023 7
2024 11
2025 2
2026 4
Total 322
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Thomas P. Moffat publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Thomas P. Moffat sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 290–309 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 297 publications — 59th percentile

59% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593 297
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Thomas P. Moffat D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Thomas P. Moffat sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 58–59 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 59 D-Index — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610 59
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Thomas P. Moffat is affiliated with the National Institute of Standards and Technology in the United States. Their research primarily spans the field of Engineering, with a focus on Electrical and Electronic Engineering, Renewable Energy, Sustainability and the Environment, Electrochemistry, Atomic and Molecular Physics and Optics, and Electronic, Optical and Magnetic Materials.

Their work covers several specialized topics including Electrochemical Analysis and Applications, Electrodeposition and Electroless Coatings, Electrocatalysts for Energy Conversion, Copper Interconnects and Reliability, CO2 Reduction Techniques and Catalysts, Molecular Junctions and Nanostructures, and Semiconductor Materials and Interfaces.

Thomas P. Moffat is a contributor to various scientific publications and has authored multiple research papers. Recent notable publications include:

  • Superconformal Film Growth: From Smoothing Surfaces to Interconnect Technology, 2023, Accounts of Chemical Research
  • High-Aspect-Ratio Ag Nanowire Mat Electrodes for Electrochemical CO Production from CO2, 2021, ACS Catalysis
  • Surface Hydride Formation on Cu(111) and Its Decomposition to Form H2 in Acid Electrolytes, 2021, The Journal of Physical Chemistry Letters
  • Pushing the Limits of Bottom-Up Gold Filling for X-ray Grating Interferometry, 2020, Journal of The Electrochemical Society
  • Bottom-up Cu filling of annular through silicon vias: Microstructure and texture, 2020, Electrochimica Acta

Their frequent coauthors include D. Josell, David Raciti, Trevor Michael Braun, Angela R. Hight Walker, and Eric D. Rus.

The most common venues for their publications are ECS Meeting Abstracts, Journal of The Electrochemical Society, The Journal of Physical Chemistry C, Accounts of Chemical Research, and The Journal of Physical Chemistry Letters.

Best Publications

  • Superconformal Electrodeposition of Copper in 500-90 nm Features

    T. P. Moffat;J. E. Bonevich;W. H. Huber;A. Stanishevsky

  • Superconformal film growth: mechanism and quantification

    Thomas P. Moffat;Daniel Wheeler;Monica D. Edelstein;Daniel Josell

  • Superconformal Electrodeposition of Copper

    T. P. Moffat;D. Wheeler;W. H. Huber;D. Josell

  • Electrodeposition of Copper in the SPS-PEG-Cl Additive System I. Kinetic Measurements: Influence of SPS

    Thomas P. Moffat;Daniel Wheeler;Daniel Josell

  • H2 evolution at Si-based metal–insulator–semiconductor photoelectrodes enhanced by inversion channel charge collection and H spillover

    Daniel V. Esposito;Igor Levin;Thomas P. Moffat;Albert A. Talin;Albert A. Talin

  • Extreme Bottom-Up Superfilling of Through-Silicon-Vias by Damascene Processing: Suppressor Disruption, Positive Feedback and Turing Patterns

    T. P. Moffat;D. Josell

  • Superconformal Electrodeposition in Submicron Features

    Daniel Josell;Daniel Wheeler;W H. Huber;Thomas P. Moffat

  • An Electrochemical and X‐Ray Photoelectron Spectroscopy Study of the Passive State of Chromium

    T. P. Moffat;R. M. Latanision

  • Seedless superfill: Copper electrodeposition in trenches with ruthenium barriers

    Daniel Josell;Daniel Wheeler;C Witt;Thomas P. Moffat

  • Curvature enhanced adsorbate coverage mechanism for bottom-up superfilling and bump control in damascene processing

    T.P. Moffat;D. Wheeler;S.-K. Kim;D. Josell

  • A Simple Equation for Predicting Superconformal Electrodeposition in Submicrometer Trenches

    Daniel Josell;Daniel Wheeler;W H. Huber;John E. Bonevich

  • Curvature Enhanced Adsorbate Coverage Model for Electrodeposition

    Thomas P. Moffat;Daniel Wheeler;Soo K. Kim;Daniel Josell

  • Modeling Superconformal Electrodeposition Using The Level Set Method

    Daniel Wheeler;Daniel Josell;Thomas P. Moffat

  • Electrodeposition of Cu in the PEI-PEG-Cl-SPS Additive System Reduction of Overfill Bump Formation During Superfilling

    Soo K. Kim;Daniel Josell;Thomas P. Moffat

  • Self-Terminating Growth of Platinum Films by Electrochemical Deposition

    Unknown

  • Electrodeposition of Cu on Ru Barrier Layers for Damascene Processing

    T. P. Moffat;M. Walker;P. J. Chen;J. E. Bonevich

  • Electrochemical and Scanning Tunneling Microscopic Study of Dealloying of Cu3Au

    Thomas P. Moffat;Fu-Ren F. Fan;Allen J. Bard

  • Cationic Surfactants for the Control of Overfill Bumps in Cu Superfilling

    Soo K. Kim;Daniel Josell;Thomas P. Moffat

  • An X-ray photoelectron spectroscopy study of chromium-metalloid alloys—III

    T.P. Moffat;R.M. Latanision;R.R. Ruf

  • Electrodeposition of Ni1 − x Al x in a Chloroaluminate Melt

    T. P. Moffat

  • Modeling Extreme Bottom-Up Filling of Through Silicon Vias

    D. Josell;D. Wheeler;T. P. Moffat

  • Electrodeposition of Al‐Cr Metallic Glass

    T. P. Moffat

Frequent Co-Authors

Daniel Josell
Daniel Josell National Institute of Standards and Technology
Lee J. Richter
Lee J. Richter National Institute of Standards and Technology
Leonid A. Bendersky
Leonid A. Bendersky National Institute of Standards and Technology
A. Alec Talin
A. Alec Talin Sandia National Laboratories
Mikko Ritala
Mikko Ritala University of Helsinki
Lourdes Salamanca-Riba
Lourdes Salamanca-Riba University of Maryland, College Park
Hoydoo You
Hoydoo You Argonne National Laboratory
Igor Levin
Igor Levin National Institute of Standards and Technology
Soo-Kil Kim
Soo-Kil Kim Chung-Ang University
Markku Leskelä
Markku Leskelä University of Helsinki

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