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D-Index & Metrics

Materials Science

D-Index
64
Citations
14301
World Ranking
5910
National Ranking
1517

S. T. Picraux publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where S. T. Picraux sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 317 publications — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

S. T. Picraux D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where S. T. Picraux sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 64 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2008 - Fellow of the Materials Research Society
  • 1999 - Fellow of the American Association for the Advancement of Science (AAAS)

Overview

S. T. Picraux is affiliated with Los Alamos National Laboratory in the United States. Their scientific career is marked by contributions to the field of materials research, as reflected by their recognition as a Fellow of the Materials Research Society in 2008. In addition, they were named a Fellow of the American Association for the Advancement of Science (AAAS) in 1999.

Picraux's work covers various aspects of materials science, although specific details on their main fields of study, subfields, or particular research topics are not provided. The absence of listed papers or frequent co-authors limits the ability to detail specific research contributions or collaborative networks.

Their recognition by major scientific societies indicates involvement in advancing knowledge within materials science and possibly related interdisciplinary areas. The fellowships suggest active participation in the scientific community, often associated with contributions to both research and professional organizations.

Best Publications

  • Materials Analysis by Ion Channeling: Submicron Crystallography

    Leonard C. Feldman;James W. Mayer;S. T. Picraux

  • Adaptable Silicon–Carbon Nanocables Sandwiched between Reduced Graphene Oxide Sheets as Lithium Ion Battery Anodes

    Bin Wang;Xianglong Li;Xianfeng Zhang;Bin Luo

  • Applications of Ion Beams to Metals

    S.T. Picraux;E.P. EerNisse;F.L. Vook

  • Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering

    J. W. Mayer;L. Eriksson;S. T. Picraux;J. A. Davies

  • Ion beams in silicon processing and characterization

    E. Chason;S. T. Picraux;J. M. Poate;J. O. Borland

  • Epitaxial growth of rare-earth silicides on (111) Si

    J. A. Knapp;S. T. Picraux

  • Are Nanoporous Materials Radiation Resistant

    E. M. Bringa;J. D. Monk;A. Caro;A. Misra

  • Lotus Effect Amplifies Light-Induced Contact Angle Switching

    Rohit Rosario;Devens Gust;Antonio A. Garcia;Mark Hayes

  • Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices

    I. J. Fritz;S. T. Picraux;L. R. Dawson;T. J. Drummond

  • FORMATION OF SiC IN SILICON BY ION IMPLANTATION

    J. A. Borders;S. T. Picraux;W. Beezhold

  • Role of integrated lateral stress in surface deformation of He‐implanted surfaces

    E. P. EerNisse;S. T. Picraux

  • Partitioning of ion-induced surface and bulk displacements☆

    D.K. Brice;J.Y. Tsao;S.T. Picraux

  • Precipitation and relaxation in strained Si1−yCy/Si heterostructures

    J. W. Strane;H. J. Stein;S. R. Lee;S. T. Picraux

  • Metastable SiGeC formation by solid phase epitaxy

    J. W. Strane;H. J. Stein;S. R. Lee;B. L. Doyle

  • Direct observation of nanoscale size effects in Ge semiconductor nanowire growth.

    Shadi A Dayeh;S T Picraux

  • New uses of ion accelerators

    Thomas A. Cahill;James A. Cairns;Wei-Kan Chu;Billy L. Crowder

  • Vapor-liquid-solid growth of germanium nanostructures on silicon

    J. W. Dailey;J. Taraci;T. Clement;David J. Smith

  • Diameter-dependent electronic transport properties of Au-catalyst/Ge-nanowire Schottky diodes.

    François Léonard;A. Alec Talin;B. S. Swartzentruber;S. T. Picraux

  • Growth, defect formation, and morphology control of germanium-silicon semiconductor nanowire heterostructures.

    Shadi A. Dayeh;Jian Wang;Nan Li;Jian Yu Huang

  • Formation of nanoporous noble metal thin films by electrochemical dealloying of PtxSi1−x

    J. C. Thorp;Karl Sieradzki;Lei Tang;Peter Crozier

  • In-Situ TEM Electrochemistry of Anode Materials in Lithium-Ion Batteries

    Jian Yu Huang;Xiao Hua Liu;Yang Liu;John P. Sullivan

Frequent Co-Authors

Shadi A. Dayeh
Shadi A. Dayeh University of California, San Diego
Wei-Kan Chu
Wei-Kan Chu University of Houston
David M. Follstaedt
David M. Follstaedt Sandia National Laboratories
Eric Chason
Eric Chason Brown University
Brian S. Swartzentruber
Brian S. Swartzentruber Sandia National Laboratories
Jian Yu Huang
Jian Yu Huang Yanshan University
James W. Mayer
James W. Mayer Arizona State University
Devens Gust
Devens Gust Arizona State University
Manuel Marquez
Manuel Marquez Arizona State University
Amit Misra
Amit Misra University of Michigan–Ann Arbor

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