S. T. Picraux

Research.com Recognitions

• 2008 - Fellow of the Materials Research Society
• 1999 - Fellow of the American Association for the Advancement of Science (AAAS)

Overview

Best Publications

• Materials Analysis by Ion Channeling: Submicron Crystallography

  Leonard C. Feldman;James W. Mayer;S. T. Picraux

  1625
  Citations

• Adaptable Silicon–Carbon Nanocables Sandwiched between Reduced Graphene Oxide Sheets as Lithium Ion Battery Anodes

  Bin Wang;Xianglong Li;Xianfeng Zhang;Bin Luo

  481
  Citations

• Applications of Ion Beams to Metals

  S.T. Picraux;E.P. EerNisse;F.L. Vook

  389
  Citations

• Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering

  J. W. Mayer;L. Eriksson;S. T. Picraux;J. A. Davies

  370
  Citations

• Ion beams in silicon processing and characterization

  E. Chason;S. T. Picraux;J. M. Poate;J. O. Borland

  368
  Citations

• Epitaxial growth of rare-earth silicides on (111) Si

  J. A. Knapp;S. T. Picraux

  335
  Citations

• Are Nanoporous Materials Radiation Resistant

  E. M. Bringa;J. D. Monk;A. Caro;A. Misra

  307
  Citations

• Lotus Effect Amplifies Light-Induced Contact Angle Switching

  Rohit Rosario;Devens Gust;Antonio A. Garcia;Mark Hayes

  301
  Citations

• Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices

  I. J. Fritz;S. T. Picraux;L. R. Dawson;T. J. Drummond

  283
  Citations

• FORMATION OF SiC IN SILICON BY ION IMPLANTATION

  J. A. Borders;S. T. Picraux;W. Beezhold

  243
  Citations

• Role of integrated lateral stress in surface deformation of He‐implanted surfaces

  E. P. EerNisse;S. T. Picraux

  237
  Citations

• Partitioning of ion-induced surface and bulk displacements☆

  D.K. Brice;J.Y. Tsao;S.T. Picraux

  199
  Citations

• Precipitation and relaxation in strained Si1−yCy/Si heterostructures

  J. W. Strane;H. J. Stein;S. R. Lee;S. T. Picraux

  186
  Citations

• Metastable SiGeC formation by solid phase epitaxy

  J. W. Strane;H. J. Stein;S. R. Lee;B. L. Doyle

  185
  Citations

• Direct observation of nanoscale size effects in Ge semiconductor nanowire growth.

  Shadi A Dayeh;S T Picraux

  178
  Citations

• New uses of ion accelerators

  Thomas A. Cahill;James A. Cairns;Wei-Kan Chu;Billy L. Crowder

  166
  Citations

• Vapor-liquid-solid growth of germanium nanostructures on silicon

  J. W. Dailey;J. Taraci;T. Clement;David J. Smith

  156
  Citations

• Diameter-dependent electronic transport properties of Au-catalyst/Ge-nanowire Schottky diodes.

  François Léonard;A. Alec Talin;B. S. Swartzentruber;S. T. Picraux

  147
  Citations

• Growth, defect formation, and morphology control of germanium-silicon semiconductor nanowire heterostructures.

  Shadi A. Dayeh;Jian Wang;Nan Li;Jian Yu Huang

  146
  Citations

• Formation of nanoporous noble metal thin films by electrochemical dealloying of PtxSi1−x

  J. C. Thorp;Karl Sieradzki;Lei Tang;Peter Crozier

  141
  Citations

• In-Situ TEM Electrochemistry of Anode Materials in Lithium-Ion Batteries

  Jian Yu Huang;Xiao Hua Liu;Yang Liu;John P. Sullivan

  2
  Citations