D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 86 Citations 29,568 406 World Ranking 1041 National Ranking 382

Research.com Recognitions

Awards & Achievements

1981 - Von Hippel Award, Materials Research Society

Overview

What is he best known for?

The fields of study he is best known for:

  • Electron
  • Semiconductor
  • Silicon

James W. Mayer mostly deals with Silicon, Analytical chemistry, Ion implantation, Amorphous solid and Crystallography. He combines subjects such as Crystal growth, Nanotechnology, Amorphous silicon, Dopant and Atomic physics with his study of Silicon. His Analytical chemistry research integrates issues from Rutherford backscattering spectrometry, Thin film and Layer, Substrate, Silicide.

His work deals with themes such as Epitaxy, Noble gas, Annealing, Optoelectronics and Crystallographic defect, which intersect with Ion implantation. His work carried out in the field of Amorphous solid brings together such families of science as Crystallization, Eutectic system and Activation energy. The concepts of his Crystallography study are interwoven with issues in X-ray crystallography, Condensed matter physics, Scanning electron microscope and Nucleation.

His most cited work include:

  • Ion implantation in semiconductors (1210 citations)
  • Fundamentals of Surface and Thin Film Analysis (900 citations)
  • Ion-Solid Interactions: Fundamentals and Applications (693 citations)

What are the main themes of his work throughout his whole career to date?

James W. Mayer focuses on Analytical chemistry, Silicon, Annealing, Ion implantation and Thin film. His study in Analytical chemistry is interdisciplinary in nature, drawing from both Rutherford backscattering spectrometry, Layer, Silicide, Amorphous solid and Ion beam. The study incorporates disciplines such as Crystallography, Transmission electron microscopy, Epitaxy and Atomic physics in addition to Silicon.

His Annealing study combines topics in areas such as Alloy, Irradiation and Electrical resistivity and conductivity. James W. Mayer has researched Ion implantation in several fields, including Wafer, Doping, Dopant, Hall effect and Crystallographic defect. James W. Mayer has included themes like Composite material and Diffraction in his Thin film study.

He most often published in these fields:

  • Analytical chemistry (41.95%)
  • Silicon (39.41%)
  • Annealing (24.36%)

What were the highlights of his more recent work (between 1999-2014)?

  • Silicon (39.41%)
  • Analytical chemistry (41.95%)
  • Annealing (24.36%)

In recent papers he was focusing on the following fields of study:

James W. Mayer spends much of his time researching Silicon, Analytical chemistry, Annealing, Rutherford backscattering spectrometry and Thin film. The Silicon study combines topics in areas such as Wafer, Crystallography, Layer, Ion implantation and Transmission electron microscopy. His studies in Analytical chemistry integrate themes in fields like Optoelectronics, Silicide, Atmospheric temperature range and Scanning electron microscope.

His Annealing study incorporates themes from Electron beam annealing and Epitaxy. His research integrates issues of Crystal growth and Dopant in his study of Epitaxy. His work carried out in the field of Thin film brings together such families of science as Composite material, Thermal stability and Electrical resistivity and conductivity.

Between 1999 and 2014, his most popular works were:

  • Materials Analysis by Ion Channeling: Submicron Crystallography (225 citations)
  • Ion Implantation and Synthesis of Materials (109 citations)
  • Band gap shift in the indium-tin-oxide films on polyethylene napthalate after thermal annealing in air (108 citations)

In his most recent research, the most cited papers focused on:

  • Electron
  • Semiconductor
  • Silicon

The scientist’s investigation covers issues in Ion implantation, Analytical chemistry, Wafer, Silicon and Thin film. James W. Mayer usually deals with Ion implantation and limits it to topics linked to Doping and Boron and Epitaxy. His Analytical chemistry research includes elements of Optoelectronics, Rutherford backscattering spectrometry, Annealing and Scanning electron microscope.

His work deals with themes such as Crystallography, Crystallographic defect, Cleavage, Channelling and Elastic recoil detection, which intersect with Wafer. His Layer research extends to the thematically linked field of Silicon. James W. Mayer combines subjects such as Surface roughness and Substrate with his study of Thin film.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Fundamentals of Surface and Thin Film Analysis

Leonard C. Feldman;James W. Mayer;M. Grasserbauer.
(1986)

2090 Citations

Materials Analysis by Ion Channeling: Submicron Crystallography

Leonard C. Feldman;James W. Mayer;S. T. Picraux.
(2012)

1611 Citations

Ion implantation in semiconductors

J.W. Mayer.
international electron devices meeting (1973)

1365 Citations

Ion-Solid Interactions: Fundamentals and Applications

Michael Anthony Nastasi;James W. Mayer;J. K. Hirvonen.
(1996)

1143 Citations

Electronic thin film science : for electrical engineers and materials scientists

K. N. Tu;James W. Mayer;Leonard C. Feldman.
(1996)

988 Citations

Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si

L. Csepregi;E. F. Kennedy;J. W. Mayer;T. W. Sigmon.
Journal of Applied Physics (1978)

815 Citations

Laser Annealing of Semiconductors

J. M. Poate;James W. Mayer.
(1982)

797 Citations

Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation

Michael O. Thompson;G. J. Galvin;J. W. Mayer;P. S. Peercy.
Physical Review Letters (1984)

662 Citations

Electronic Materials Science: For Integrated Circuits in Si and GaAS

James Walter Mayer;S. S Lau.
(1990)

640 Citations

Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ions

L. Csepregi;E. F. Kennedy;T. J. Gallagher;J. W. Mayer.
Journal of Applied Physics (1977)

618 Citations

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