1981 - Von Hippel Award, Materials Research Society
James W. Mayer mostly deals with Silicon, Analytical chemistry, Ion implantation, Amorphous solid and Crystallography. He combines subjects such as Crystal growth, Nanotechnology, Amorphous silicon, Dopant and Atomic physics with his study of Silicon. His Analytical chemistry research integrates issues from Rutherford backscattering spectrometry, Thin film and Layer, Substrate, Silicide.
His work deals with themes such as Epitaxy, Noble gas, Annealing, Optoelectronics and Crystallographic defect, which intersect with Ion implantation. His work carried out in the field of Amorphous solid brings together such families of science as Crystallization, Eutectic system and Activation energy. The concepts of his Crystallography study are interwoven with issues in X-ray crystallography, Condensed matter physics, Scanning electron microscope and Nucleation.
James W. Mayer focuses on Analytical chemistry, Silicon, Annealing, Ion implantation and Thin film. His study in Analytical chemistry is interdisciplinary in nature, drawing from both Rutherford backscattering spectrometry, Layer, Silicide, Amorphous solid and Ion beam. The study incorporates disciplines such as Crystallography, Transmission electron microscopy, Epitaxy and Atomic physics in addition to Silicon.
His Annealing study combines topics in areas such as Alloy, Irradiation and Electrical resistivity and conductivity. James W. Mayer has researched Ion implantation in several fields, including Wafer, Doping, Dopant, Hall effect and Crystallographic defect. James W. Mayer has included themes like Composite material and Diffraction in his Thin film study.
James W. Mayer spends much of his time researching Silicon, Analytical chemistry, Annealing, Rutherford backscattering spectrometry and Thin film. The Silicon study combines topics in areas such as Wafer, Crystallography, Layer, Ion implantation and Transmission electron microscopy. His studies in Analytical chemistry integrate themes in fields like Optoelectronics, Silicide, Atmospheric temperature range and Scanning electron microscope.
His Annealing study incorporates themes from Electron beam annealing and Epitaxy. His research integrates issues of Crystal growth and Dopant in his study of Epitaxy. His work carried out in the field of Thin film brings together such families of science as Composite material, Thermal stability and Electrical resistivity and conductivity.
The scientist’s investigation covers issues in Ion implantation, Analytical chemistry, Wafer, Silicon and Thin film. James W. Mayer usually deals with Ion implantation and limits it to topics linked to Doping and Boron and Epitaxy. His Analytical chemistry research includes elements of Optoelectronics, Rutherford backscattering spectrometry, Annealing and Scanning electron microscope.
His work deals with themes such as Crystallography, Crystallographic defect, Cleavage, Channelling and Elastic recoil detection, which intersect with Wafer. His Layer research extends to the thematically linked field of Silicon. James W. Mayer combines subjects such as Surface roughness and Substrate with his study of Thin film.
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Fundamentals of Surface and Thin Film Analysis
Leonard C. Feldman;James W. Mayer;M. Grasserbauer.
Materials Analysis by Ion Channeling: Submicron Crystallography
Leonard C. Feldman;James W. Mayer;S. T. Picraux.
Ion implantation in semiconductors
international electron devices meeting (1973)
Ion-Solid Interactions: Fundamentals and Applications
Michael Anthony Nastasi;James W. Mayer;J. K. Hirvonen.
Electronic thin film science : for electrical engineers and materials scientists
K. N. Tu;James W. Mayer;Leonard C. Feldman.
Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
L. Csepregi;E. F. Kennedy;J. W. Mayer;T. W. Sigmon.
Journal of Applied Physics (1978)
Laser Annealing of Semiconductors
J. M. Poate;James W. Mayer.
Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation
Michael O. Thompson;G. J. Galvin;J. W. Mayer;P. S. Peercy.
Physical Review Letters (1984)
Electronic Materials Science: For Integrated Circuits in Si and GaAS
James Walter Mayer;S. S Lau.
Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ions
L. Csepregi;E. F. Kennedy;T. J. Gallagher;J. W. Mayer.
Journal of Applied Physics (1977)
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