James W. Mayer

Research.com Recognitions

• 1998 - Fellow of the American Association for the Advancement of Science (AAAS)
• 1989 - Fellow of Alfred P. Sloan Foundation
• 1981 - Von Hippel Award, Materials Research Society
• 1972 - Fellow of American Physical Society (APS)

Overview

Best Publications

• Fundamentals of Surface and Thin Film Analysis

  Leonard C. Feldman;James W. Mayer;M. Grasserbauer

  2093
  Citations

• Materials Analysis by Ion Channeling: Submicron Crystallography

  Leonard C. Feldman;James W. Mayer;S. T. Picraux

  1625
  Citations

• Ion implantation in semiconductors

  J.W. Mayer

  1371
  Citations

• Ion-Solid Interactions: Fundamentals and Applications

  Michael Anthony Nastasi;James W. Mayer;J. K. Hirvonen

  1203
  Citations

• Electronic thin film science : for electrical engineers and materials scientists

  K. N. Tu;James W. Mayer;Leonard C. Feldman

  997
  Citations

• Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si

  L. Csepregi;E. F. Kennedy;J. W. Mayer;T. W. Sigmon

  826
  Citations

• Laser Annealing of Semiconductors

  J. M. Poate;James W. Mayer

  800
  Citations

• Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation

  Michael O. Thompson;G. J. Galvin;J. W. Mayer;P. S. Peercy

  685
  Citations

• Electronic Materials Science: For Integrated Circuits in Si and GaAS

  James Walter Mayer;S. S Lau

  640
  Citations

• Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ions

  L. Csepregi;E. F. Kennedy;T. J. Gallagher;J. W. Mayer

  621
  Citations

• Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layers

  E. F. Kennedy;L. Csepregi;J. W. Mayer;T. W. Sigmon

  460
  Citations

• Principles and applications of ion beam techniques for the analysis of solids and thin films

  W.K. Chu;J.W. Mayer;M-A. Nicolet;T.M. Buck

  420
  Citations

• Ion Implantation and Synthesis of Materials

  Michael Nastasi;James W. Mayer

  393
  Citations

• Ion implantation of silicon. I. Atom location and lattice disorder by means of 1.0-MeV helium ion scattering

  J. A. Davies;J. Denhartog;L. Eriksson;J. W. Mayer

  388
  Citations

• Oxidation and protection in copper and copper alloy thin films

  Jian Li;J. W. Mayer;E. G. Colgan

  371
  Citations

• Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering

  J. W. Mayer;L. Eriksson;S. T. Picraux;J. A. Davies

  370
  Citations

• Ion beams in silicon processing and characterization

  E. Chason;S. T. Picraux;J. M. Poate;J. O. Borland

  368
  Citations

• Regrowth behavior of ion-implanted amorphous layers on silicon

  L. Csepregi;J. W. Mayer;T. W. Sigmon

  358
  Citations

• Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structures

  J. W. Mayer;B. Y. Tsaur;S. S. Lau;L. S. Hung

  319
  Citations

• Implanted noble gas atoms as diffusion markers in silicide formation

  W. K. Chu;S. S. Lau;J. W. Mayer;H. Müller

  311
  Citations

• Fundamentals of surface and thin film analysis : North Holland, Amsterdam, 1986 (ISBN 0-444-00989-2). xviii + 352 pp. Price Dfl. 125.00.

  Leonard C. Feldman;James W. Mayer;M. Grasserbauer

  57
  Citations

• 2 – Backscattering Spectrometry

  G. Foti;J.W. Mayer;E. Rimini;S.U. Campisano

  28
  Citations