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D-Index & Metrics

Materials Science

D-Index
65
Citations
14985
World Ranking
5640
National Ranking
1462

T. C. McGill publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where T. C. McGill sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 426 publications — 80th percentile

80% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

T. C. McGill D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where T. C. McGill sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 65 D-Index — 57th percentile

57% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

T. C. McGill is affiliated with the California Institute of Technology in the United States. The scientist's research profile does not currently list specific publications, co-authors, or areas of research focus that are publicly detailed.

McGill has no recent papers recorded in the available data, nor are there any frequent co-authors or common publication venues associated with their work. There also are no documented book publications.

The fields and subfields of study, as well as the main topics of research, have not been detailed in the accessible information about McGill's academic contributions.

There is no recorded history of awards or honors linked to McGill in the provided data.

Given the limited data, further insight into T. C. McGill's scientific output or research interests cannot be drawn from the current records. The affiliation with a major research institution may suggest involvement in academic pursuits, but available sources do not specify details of their scholarly activities.

Best Publications

  • Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes

    E. R. Brown;J. R. Söderström;C. D. Parker;L. J. Mahoney

  • Energy spectra of donors in GaAs − Ga 1 − x Al x As quantum well structures in the effective-mass approximation

    C. Mailhiot;Yia-Chung Chang;T. C. McGill

  • Lattice match: An application to heteroepitaxy

    A. Zur;T. C. McGill

  • New negative differential resistance device based on resonant interband tunneling

    J. R. Söderström;D. H. Chow;T. C. McGill

  • Fundamental Transition in the Electronic Nature of Solids

    S. Kurtin;T. C. McGill;C. A. Mead

  • Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion Electronegativity

    J. O. McCaldin;T. C. McGill;C. A. Mead

  • Method for fabricating transistorless, multistable current-mode memory cells and memory arrays

    Harold J. Levy;Thomas C. McGill

  • Advantages of the HgTe‐CdTe superlattice as an infrared detector material

    D. L. Smith;T. C. McGill;J. N. Schulman

  • High voltage (450 V) GaN Schottky rectifiers

    Z. Z. Bandić;P. M. Bridger;E. C. Piquette;T. C. McGill

  • The CdTe/HgTe superlattice: Proposal for a new infrared material

    Unknown

  • Interface roughness and asymmetry in InAs/GaSb superlattices studied by scanning tunneling microscopy.

    R. M. Feenstra;D. A. Collins;D. Z.-Y. Ting;M. W. Wang

  • Minority carrier diffusion length and lifetime in GaN

    Z. Z. Bandić;P. M. Bridger;E. C. Piquette;T. C. McGill

  • Multiband treatment of quantum transport in interband tunnel devices

    D. Z.-Y. Ting;E. T. Yu;T. C. McGill

  • Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy

    E. J. Preisler;O. J. Marsh;R. A. Beach;T. C. McGill

  • Fermi-level position at a semiconductor-metal interface

    A. Zur;T. C. McGill;D. L. Smith

  • Band Offsets in Semiconductor Heterojunctions

    Edward T. Yu;James O. McCaldin;Thomas C. McGill

  • Variation of impurity−to−band activation energies with impurity density

    T. F. Lee;T. C. McGill

  • Electron diffusion length and lifetime in p-type GaN

    Z. Z. Bandić;P. M. Bridger;E. C. Piquette;T. C. McGill

  • Infrared optical characterization of InAs/Ga1−xInxSb superlattices

    R. H. Miles;D. H. Chow;J. N. Schulman;T. C. McGill

  • Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy

    P. M. Bridger;Z. Z. Bandić;E. C. Piquette;T. C. McGill

  • Oxidation of silicon surfaces

    A. Redondo;W. A. Goddard;C. A. Swarts;T. C. McGill

  • Transition‐metal silicides lattice‐matched to silicon

    A. Zur;T. C. McGill;M.-A. Nicolet

  • Electronic properties of the AlAs-GaAs (001) interface and superlattice

    Unknown

Frequent Co-Authors

Edward T. Yu
Edward T. Yu The University of Texas at Austin
Robert D. Burnham
Robert D. Burnham Xerox (France)
William A. Goddard
William A. Goddard California Institute of Technology
Carver A. Mead
Carver A. Mead California Institute of Technology
Randall M. Feenstra
Randall M. Feenstra Carnegie Mellon University
James W. Mayer
James W. Mayer Arizona State University
David H. Chow
David H. Chow HRL Laboratories (United States)
Thomas F. Kuech
Thomas F. Kuech University of Wisconsin–Madison
Hannelore Ehrenreich
Hannelore Ehrenreich Central Institute of Mental Health
Joan M. Redwing
Joan M. Redwing Pennsylvania State University

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