The scientist’s investigation covers issues in Optoelectronics, Superlattice, Diode, Laser and Optics. He interconnects Molecular beam epitaxy, Gallium nitride and Power gain in the investigation of issues within Optoelectronics. His research integrates issues of Infrared and Band gap in his study of Superlattice.
The Diode study combines topics in areas such as Quantum tunnelling, Heterojunction and Detector. His Quantum tunnelling study combines topics from a wide range of disciplines, such as Quantum well and Indium arsenide. His work carried out in the field of Laser brings together such families of science as Wavelength and Active layer.
His primary areas of study are Optoelectronics, Diode, Heterojunction, Quantum tunnelling and Quantum well. He is involved in the study of Optoelectronics that focuses on Superlattice in particular. His study in Diode is interdisciplinary in nature, drawing from both Extremely high frequency, Detector, Optics, Resonant-tunneling diode and Voltage.
As a part of the same scientific family, David H. Chow mostly works in the field of Heterojunction, focusing on Bipolar junction transistor and, on occasion, Indium phosphide. His Quantum tunnelling research includes themes of Resonance and Terahertz radiation. His biological study spans a wide range of topics, including Microwave, Condensed matter physics, Semiconductor and Antimonide.
His primary scientific interests are in Optoelectronics, Electrical engineering, Monolithic microwave integrated circuit, High-electron-mobility transistor and Amplifier. His research in Optoelectronics intersects with topics in Parasitic capacitance, Gallium nitride and Heterojunction bipolar transistor, Transistor, Bipolar junction transistor. His study looks at the relationship between Electrical engineering and topics such as Indium phosphide, which overlap with Molecular beam epitaxy, Dopant Activation, Equivalent series resistance, Parasitic element and Semiconductor device.
His Monolithic microwave integrated circuit research is multidisciplinary, relying on both Power density, W band, RF power amplifier, Q factor and Extremely high frequency. His Extremely high frequency research incorporates elements of Electrical impedance, Horn, Diode and Detector. His High-electron-mobility transistor research integrates issues from Noise, Wide-bandgap semiconductor, Power gain and Noise figure.
David H. Chow mainly focuses on Optoelectronics, Monolithic microwave integrated circuit, Electrical engineering, High-electron-mobility transistor and Gallium nitride. In his study, David H. Chow carries out multidisciplinary Optoelectronics and G band research. His work deals with themes such as Extremely high frequency and Power density, which intersect with Monolithic microwave integrated circuit.
His work on RF power amplifier, Electronic circuit, Digital electronics and Mixed-signal integrated circuit as part of his general Electrical engineering study is frequently connected to Direct-coupled amplifier, thereby bridging the divide between different branches of science. His research investigates the connection with High-electron-mobility transistor and areas like Power gain which intersect with concerns in W band. In his study, Logic gate is inextricably linked to Amplifier, which falls within the broad field of Gallium nitride.
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AUGER LIFETIME ENHANCEMENT IN INAS-GA1-XINXSB SUPERLATTICES
E. R. Youngdale;J. R. Meyer;C. A. Hoffman;F. J. Bartoli.
Applied Physics Letters (1994)
Physics-based RTD current-voltage equation
J.N. Schulman;H.J. De Los Santos;D.H. Chow.
IEEE Electron Device Letters (1996)
Mid‐wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices
D. H. Chow;R. H. Miles;T. C. Hasenberg;A. R. Kost.
Applied Physics Letters (1995)
Infrared optical characterization of InAs/Ga1−xInxSb superlattices
R. H. Miles;D. H. Chow;J. N. Schulman;T. C. McGill.
Applied Physics Letters (1990)
92–96 GHz GaN power amplifiers
M. Micovic;A. Kurdoghlian;A. Margomenos;D. F. Brown.
international microwave symposium (2012)
GaN HFET for W-band Power Applications
M. Micovic;A. Kurdoghlian;P. Hashimoto;M. Hu.
international electron devices meeting (2006)
Midwave infrared stimulated emission from a GaInSb/InAs superlattice
R. H. Miles;D. H. Chow;Y.‐H. Zhang;P. D. Brewer.
Applied Physics Letters (1995)
Sb-heterostructure interband backward diodes
J.N. Schulman;D.H. Chow.
IEEE Electron Device Letters (2000)
Superlattice cladding layers for mid-infrared lasers
Thomas C. Hasenberg;David H. Chow.
(1994)
Growth and characterization of InAs/Ga1−xInxSb strained‐layer superlattices
D. H. Chow;R. H. Miles;J. R. Söderström;T. C. McGill.
Applied Physics Letters (1990)
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